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    • 1. 发明申请
    • PRESSURE GAUGE
    • 压力计
    • WO2008149298A1
    • 2008-12-11
    • PCT/IB2008/052184
    • 2008-06-04
    • NXP B.V.PHAN LE, KimVAN BEEK, Jozef, T., M.
    • PHAN LE, KimVAN BEEK, Jozef, T., M.
    • G01L9/00G01L21/00G01D5/00H03H3/00
    • G01L21/22G01L9/0022H03H9/02259H03H9/2452H03H2009/02496
    • A pressure/vacuum sensor and method, comprising: driving a MEMS piezoresistive resonator (8) into resonant vibration, applying Joule heating to the resonator (8); and sensing a variable parameter that varies in response to the tendency of the resonant frequency (fo) to depend upon the temperature of the resonator (8), the temperature thereof depending upon the pressure. The variable parameter may be the resonant frequency of the resonator (8), or a change therein, or may be derived from a feedback loop, being for example a time integrated feedback signal (82) or a reading (94) of the sense current (22), the loop keeping the resonant frequency constant in opposition to the above mentioned tendency. A reference MEMS capacitive resonator (62) may be located in the vicinity of the resonator (8) for compensating purposes.
    • 一种压力/真空传感器和方法,包括:将MEMS压阻谐振器(8)驱动到共振振动中,对谐振器(8)施加焦耳加热; 以及感测响应谐振频率(fo)的趋势而变化的可变参数取决于谐振器(8)的温度,其温度取决于压力。 可变参数可以是谐振器(8)的谐振频率或其中的变化,或者可以从反馈回路导出,例如时间积分反馈信号(82)或感测电流的读数(94) (22),保持谐振频率与上述趋势相反的环路的回路。 参考MEMS电容谐振器(62)可以位于谐振器(8)附近用于补偿目的。
    • 2. 发明申请
    • A MEMS RESONATOR, A METHOD OF MANUFACTURING THEREOF, AND A MEMS OSCILLATOR
    • MEMS谐振器,其制造方法以及MEMS振荡器
    • WO2007072409A2
    • 2007-06-28
    • PCT/IB2006/054931
    • 2006-12-18
    • NXP B.V.VAN BEEK, Jozef, T., M.LOEBL, Hans-PeterVANHELMONT, Frederik, W., M.
    • VAN BEEK, Jozef, T., M.LOEBL, Hans-PeterVANHELMONT, Frederik, W., M.
    • H03H9/02H03H3/007
    • H03H9/02448H03H3/0072H03H9/2447H03H2009/02496Y10T29/42
    • The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (B) having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient, at least, at operating conditions of the MEMS resonator, and a cross-sectional area of the first part (A) and the cross-sectional area of the second part (B) being such that the absolute temperature coefficient of the Young's modulus of the first part (A) multiplied by the cross-sectional area of the first part (A) does not deviate more than 20% from the absolute temperature coefficient of the Young's modulus of the second part (B) multiplied by the cross-sectional area of the second part (B), the cross-sectional areas being measured locally and perpendicularly to the movable element (48).
    • 本发明涉及一种包括可移动元件(48)的MEMS谐振器,可移动元件(48)包括具有第一杨氏模量和第一杨氏模量的第一温度系数的第一部分(A) 并且所述可移动元件(48)还包括具有第二杨氏模量和第二杨氏模量的第二温度系数的第二部分(B),所述第二温度系数的符号与所述第一温度系数的符号相反 至少在MEMS谐振器的操作条件下,第一部分(A)的横截面积和第二部分(B)的横截面积使得杨氏模量的绝对温度系数 第一部分(A)乘以第一部分(A)的横截面积与第二部分(B)的杨氏模量的绝对温度系数乘以横截面积的偏差不超过20% 的秒 (B),所述横截面积局部地且垂直于所述可移动元件(48)测量。
    • 4. 发明申请
    • METHOD FOR MANUFACTURING MEMS DEVICES WITH MOVEABLE STRUCTURE
    • 制造具有可移动结构的MEMS器件的方法
    • WO2008001252A2
    • 2008-01-03
    • PCT/IB2007/052269
    • 2007-06-14
    • NXP B.V.VAN VELZEN, BartVAN BEEK, Jozef, T., M.KNOTTER, Dirk, M.
    • VAN VELZEN, BartVAN BEEK, Jozef, T., M.KNOTTER, Dirk, M.
    • B81C1/00
    • B81C1/00952B81B3/001B81C2201/0109
    • After the release etch of MEMS structures stiction is a well-known problem. Especially for the buried oxide etch on SOI wafers because of the very flat surfaces. Methods to prevent stiction are etching with an etch liquid but the wafers are dried in a CPD tool or alternatively etching with a vapor. However these methods require special equipment and are only effective for the release etch. A simple method for the formation of anti-stiction structures is described in order to prevent direct mechanical contact. The buried oxide is etched in a controlled way and stopped before the buried oxide is totally etched away. The buried oxide residues form anti-stiction structures and prevent direct contact between the resonator and the substrate. For this method no special equipment is required and the process complexity is not increased.
    • 在MEMS结构的释放蚀刻之后,静摩擦是一个众所周知的问题。 特别是对于SOI晶片上的掩埋氧化物蚀刻,因为其表面非常平坦。 防止静摩擦的方法是用蚀刻液进行蚀刻,但晶片在CPD工具中干燥或用蒸气蚀刻。 然而这些方法需要特殊的设备,并且只对释放蚀刻有效。 描述了形成防粘结构的简单方法,以防止直接的机械接触。 掩埋氧化物以受控方式蚀刻,并在掩埋氧化物完全蚀刻掉之前停止。 掩埋的氧化物残余物形成抗静摩擦结构并防止谐振器和衬底之间的直接接触。 对于这种方法,不需要特殊的设备,工艺复杂性也不会增加。