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1. 发明申请

WO2009047715A1 LOW-POWER DICKSON CHARGE PUMP 审中-公开
标题翻译：低功率DICKSON充电泵
公开(公告)号：WO2009047715A1
公开(公告)日：2009-04-16
申请号：PCT/IB2008/054120
申请日：2008-10-08
申请人： NXP B.V. , PONOMAREV, Youri Victorovitch , HUMBERT, Aurelie , HOOFMAN, Romano , CURATOLA, Gilberto , PIJNENBURG, Remco Henricus Wilhelmus , MERZ, Matthias
发明人： PONOMAREV, Youri Victorovitch , HUMBERT, Aurelie , HOOFMAN, Romano , CURATOLA, Gilberto , PIJNENBURG, Remco Henricus Wilhelmus , MERZ, Matthias
IPC分类号： H02M3/07
CPC分类号： H02M3/073
摘要： A charge pump (400) has a concatenation of a plurality of stages. Each stage has a current path between a stage input and a stage output. The stages have their current paths connected in series. Each pair of adjacent stages has their current paths complementarily controlled using two clock signals (Φi, Φ2) in anti-phase. Each stage has a capacitor (116, 118, 120, 122) connected between the stage output (126, 128) and one of the clock lines (123, 125). Each stage has a FET (402, 404, 406, 408) whose channel forms part of the current path. Each FET has two gate electrodes controlled by the clock signals (Φi, Φ2) so as to increase its threshold voltage when the current channel is controlled to be blocking.
摘要翻译：电荷泵（400）具有多级的级联。每个阶段在舞台输入和舞台输出之间具有电流路径。这些阶段的电流路径串联。每对相邻级的电流路径使用反相的两个时钟信号（Fi，F2）进行互补控制。每个级具有连接在级输出（126,128）和一个时钟线（123,125）之间的电容器（116,118,120,122）。每个级具有其通道形成电流路径的一部分的FET（402,404,406,408）。每个FET具有由时钟信号（Fi，F2）控制的两个栅电极，以便当当前通道被控制为阻塞时增加其阈值电压。

2. 发明申请

WO2009138893A1 SENSOR CALIBRATION IN AN RFID TAG 审中-公开
标题翻译： RFID标签中的传感器校准
公开(公告)号：WO2009138893A1
公开(公告)日：2009-11-19
申请号：PCT/IB2009/051758
申请日：2009-04-30
申请人： NXP B.V. , HUMBERT, Aurelie , CURATOLA, Gilberto , MERZ, Matthias , PIJNENBURG, Remco Henricus Wilhelmus , HOOFMAN, Romano , PONOMAREV, Youri
发明人： HUMBERT, Aurelie , CURATOLA, Gilberto , MERZ, Matthias , PIJNENBURG, Remco Henricus Wilhelmus , HOOFMAN, Romano , PONOMAREV, Youri
IPC分类号： G01D18/00 , G01K15/00
CPC分类号： G01D18/008 , G01K1/024 , G01K3/04 , G01K15/00
摘要： A sensor, electrically connected to transponder, is calibrated in an environment of operational use of the transponder. The calibrating uses as a reference a value of a parameter representative of the environment.
摘要翻译：电连接到应答器的传感器在应答器的操作使用环境中被校准。校准用作参考代表环境的参数的值。

3. 发明申请

WO2011064622A1 A DEVICE HAVING A CORROSION DETECTION FUNCTION AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有腐蚀检测功能的装置及其制造方法
公开(公告)号：WO2011064622A1
公开(公告)日：2011-06-03
申请号：PCT/IB2009/055393
申请日：2009-11-27
申请人： NXP B.V. , HUMBERT, Aurelie , LAMBERT, Magali , PONOMAREV, Youri,Victorovitch , MERZ, Matthias , HOOFMAN, Romano
发明人： HUMBERT, Aurelie , LAMBERT, Magali , PONOMAREV, Youri,Victorovitch , MERZ, Matthias , HOOFMAN, Romano
IPC分类号： G01D5/34 , G01M11/08 , G01N17/00 , G01N17/04
CPC分类号： G01N17/04 , G01D5/34 , G01N21/774 , G01N2021/7773
摘要： A device (100) comprising a substrate (102) having a corrodible material, a grating (104) formed on and/or in the substrate (102), an electromagnetic radiation source (106) formed on and/or in the substrate (102) and adapted for directing an electromagnetic radiation beam (108) onto the grating (104), an electromagnetic radiation detector (110) formed on and/or in the substrate (102) and adapted for detecting the electromagnetic radiation beam (108) after interaction with the grating (104), and an evaluation unit (112) formed on and/or in the substrate (100) and adapted for evaluating a corrosion state of the corrodible material based on the detected electromagnetic radiation beam (108).
摘要翻译：一种包括具有可腐蚀材料的衬底（102），形成在衬底（102）上和/或衬底（102）中的光栅（104）的器件（100），形成在衬底（102）和/或衬底（102）上的电磁辐射源）并且适于将电磁辐射束（108）引导到光栅（104）上，电磁辐射检测器（110）形成在衬底（102）上和/或衬底（102）上并且适于在相互作用之后检测电磁辐射束（108）与所述光栅（104）和形成在所述基板（100）上和/或所述基板（100）中并且适于基于所检测的电磁辐射束（108）评估所述可腐蚀材料的腐蚀状态的评估单元（112）。

4. 发明申请

WO2009016594A3 HUMIDITY SENSOR BASED ON PROGRESSIVE CORROSION OF EXPOSED MATERIAL 审中-公开
公开(公告)号：WO2009016594A3
公开(公告)日：2009-02-05
申请号：PCT/IB2008/053059
申请日：2008-07-30
申请人： NXP B.V. , HUMBERT, Aurelie , PONOMAREV, Youri, Victorovitch , MERZ, Matthias , HOOFMAN, Romano
发明人： HUMBERT, Aurelie , PONOMAREV, Youri, Victorovitch , MERZ, Matthias , HOOFMAN, Romano
IPC分类号： G01N17/04 , G01N27/12
摘要： A sensor senses a characteristic of an environment, e.g., humidity. The sensor has a substrate with strips of material that is sensitive to corrosion as a result of the characteristic. The strips are configured to respond differently to the characteristic. By means of repeatedly measuring the resistances of the strips, the environment can be monitored in terms of accumulated exposure to the characteristic. The strips are manufactured in a semiconductor technology so as to generate accurate sensors that behave predictably.

5. 发明申请

WO2011010264A1 A SENSOR 审中-公开
标题翻译：传感器
公开(公告)号：WO2011010264A1
公开(公告)日：2011-01-27
申请号：PCT/IB2010/053259
申请日：2010-07-16
申请人： NXP B.V. , HUMBERT, Aurelie , PONOMAREV, Youri, Victorovitch , DAAMEN, Roel , MERZ, Matthias
发明人： HUMBERT, Aurelie , PONOMAREV, Youri, Victorovitch , DAAMEN, Roel , MERZ, Matthias
IPC分类号： G01N27/22 , G01N33/00
CPC分类号： G01N27/223 , G01N33/004
摘要： A sensor (2) for sensing a first substance and a second substance, the sensor comprising first (3) and second (5) sensor components each comprising a first material (20), the first material being sensitive to both the first substance and the second substance, the sensor further comprising a barrier (18) for preventing the second substance from passing into the second sensor component (5).
摘要翻译：一种用于感测第一物质和第二物质的传感器（2），所述传感器包括第一（3）和第二（5）个传感器部件，每个传感器部件包括第一材料（20），所述第一材料对第一物质和第二物质，传感器还包括用于防止第二物质进入第二传感器部件（5）的阻挡层（18）。

6. 发明申请

WO2011073837A1 LIQUID IMMERSION SENSOR 审中-公开
标题翻译：液体浸入式传感器
公开(公告)号：WO2011073837A1
公开(公告)日：2011-06-23
申请号：PCT/IB2010/055480
申请日：2010-11-29
申请人： NXP B.V. , HUMBERT, Aurelie , MERZ, Matthias , DAAMEN, Roel , PONOMAREV, Youri Victorovitch
发明人： HUMBERT, Aurelie , MERZ, Matthias , DAAMEN, Roel , PONOMAREV, Youri Victorovitch
IPC分类号： G01N27/04
CPC分类号： G01N27/041 , G01N27/048
摘要： Disclosed is a liquid immersion sensor comprising a substrate (10) carrying a conductive sensing element (20) and a corrosive agent (30) for corroding the conductive sensing element, said corrosive agent being immobilized in the vicinity of the conductive sensing element and being soluble in said liquid.
摘要翻译：公开了一种液浸传感器，其包括承载导电感测元件（20）的基底（10）和用于腐蚀导电感测元件的腐蚀剂（30），所述腐蚀剂固定在导电感测元件附近并且是可溶的在所述液体中。

7. 发明申请

WO2008056295A1 A SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：一种半导体器件及其制造方法
公开(公告)号：WO2008056295A1
公开(公告)日：2008-05-15
申请号：PCT/IB2007/054385
申请日：2007-10-29
申请人： NXP B.V. , HUMBERT, Aurelie , HOOFMAN, Romano
发明人： HUMBERT, Aurelie , HOOFMAN, Romano
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L21/7682 , H01L21/76825 , H01L21/76831 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： The invention relates to a semiconductor device comprising: a substrate (1), the substrate (1) comprising a body (5), the body (5) having a surface, the substrate (1) being provided with an insulating layer (10) on the surface of the body (l); - a conductor (25) with insulating sidewall spacers (22) located in the insulating layer (10), the conductor (25) having a current-flow direction during operation, the conductor (25) having a first width, the insulating sidewall spacers (22) each having a second width being smaller than the first width of the conductor (25), the first width and the second width being measured in a direction perpendicular to the current-flow direction of the conductor (25) and parallel to said surface, the conductor (25) having a first top surface extending parallel to said surface, the insulating sidewall spacers (22) having a second top surface, and airgaps (30) located in the insulating layer (10) adjacent to the insulating sidewall spacers (22), characterized in that the first top surface coincides with the second top surface, and in that the airgaps (30) extend from the surface of the body (5) to said first and second top surface. The invention further relates to a method of manufacturing such a semiconductor device. The semiconductor device according to the invention enables a lower resistance of the conductor while still providing a tolerance for unlanded vias.
摘要翻译：本发明涉及一种半导体器件，包括：衬底（1），所述衬底（1）包括主体（5），所述主体（5）具有表面，所述衬底（1）设置有绝缘层（10）在身体表面（l）; - 导体（25），其具有位于所述绝缘层（10）中的绝缘侧壁间隔物（22），所述导体（25）在操作期间具有电流流动方向，所述导体（25）具有第一宽度，所述绝缘侧壁间隔件（22），每个具有小于所述导体（25）的第一宽度的第二宽度，所述第一宽度和所述第二宽度在垂直于所述导体（25）的电流流动方向的方向上测量并平行于所述导体所述导体（25）具有平行于所述表面延伸的第一顶表面，所述绝缘侧壁间隔件（22）具有第二顶表面，以及位于所述绝缘层（10）中邻近所述绝缘侧壁间隔件（22），其特征在于，所述第一顶表面与所述第二顶表面重合，并且所述气隙（30）从所述主体（5）的表面延伸到所述第一和第二顶表面。本发明还涉及一种制造这种半导体器件的方法。根据本发明的半导体器件使得导体的电阻较低，同时仍然提供对未经过过孔的容差。

8. 发明申请

WO2010029507A1 SENSOR HAS COMBINED IN-PLANE AND PARALLEL-PLANE CONFIGURATION 审中-公开
标题翻译：传感器组合在平面和平行平面配置中
公开(公告)号：WO2010029507A1
公开(公告)日：2010-03-18
申请号：PCT/IB2009/053959
申请日：2009-09-10
申请人： NXP B.V. , HUMBERT, Aurelie , MERZ, Matthias
发明人： HUMBERT, Aurelie , MERZ, Matthias
IPC分类号： G01N27/02 , G01N27/22
CPC分类号： G01N27/223
摘要： A sensor senses a magnitude of a physical parameter of the sensor's environment. The sensor has first and second electrodes, and a material layer between them. The material has an electrical property, e.g., capacitance or resistance, whose value depends on the magnitude of the physical parameter. The first electrode is formed in a first layer, and the second electrode is formed in a second layer, different from the first layer. The first layer has a trench and an elevation next to the trench. The trench has a bottom wall and a side wall. The material is positioned on the bottom wall and on the side wall and on top of the elevation. The trench accommodates at least a part of the second electrode. The second electrode leaves exposed the material formed on top of the elevation.
摘要翻译：传感器感测传感器环境的物理参数的大小。传感器具有第一和第二电极以及它们之间的材料层。该材料具有电性能，例如电容或电阻，其值取决于物理参数的大小。第一电极形成在第一层中，并且第二电极形成在与第一层不同的第二层中。第一层在沟槽旁边具有沟槽和高度。沟槽具有底壁和侧壁。材料位于底壁和侧壁上以及高度的顶部。沟槽容纳至少一部分第二电极。第二个电极离开了形成在高程顶部的材料。

9. 发明申请

WO2009109932A1 REVERSE ENGINEERING RESISTANT READ ONLY MEMORY 审中-公开
标题翻译：反向工程电阻只读存储器
公开(公告)号：WO2009109932A1
公开(公告)日：2009-09-11
申请号：PCT/IB2009/050903
申请日：2009-03-05
申请人： NXP B.V. , HUMBERT, Aurelie , GOARIN, Pierre , DELHOUGNE, Romain
发明人： HUMBERT, Aurelie , GOARIN, Pierre , DELHOUGNE, Romain
IPC分类号： H01L21/8246 , H01L27/112 , H01L23/522 , H01L23/58
CPC分类号： H01L23/573 , H01L23/5223 , H01L27/112 , H01L27/11213 , H01L27/11253 , H01L2924/0002 , H01L2924/00
摘要： A read only memory is manufactured with a plurality of transistors (4) on a semiconductor substrate (2). A low-k dielectric (10) and interconnects (14) are provided over the transistors (4). To program the read only memory, the low-k dielectric is implanted with ions (22) in unmasked regions (20) leaving the dielectric unimplanted in masked regions (18). The memory thus formed is difficult to reverse engineer.
摘要翻译：在半导体衬底（2）上制造具有多个晶体管（4）的只读存储器。在晶体管（4）之上提供低k电介质（10）和互连（14）。为了对只读存储器进行编程，在未屏蔽区域（20）中注入低k电介质，离子（22）留下未被掩盖在掩蔽区域（18）中的电介质。这样形成的记忆难以逆向工程。

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