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1. 发明申请

WO0026443A3 METHOD AND APPARATUS FOR ELECTROCHEMICAL MECHANICAL DEPOSITION 审中-公开
标题翻译：电化学机械沉积的方法与装置
公开(公告)号：WO0026443A3
公开(公告)日：2000-10-12
申请号：PCT/US9925656
申请日：1999-11-02
申请人： NUTOOL INC
发明人： TALIEH HOMAYOUN
IPC分类号： C25D7/12 , B23H5/08 , B24B37/26 , C25D5/02 , C25D5/06 , C25D5/08 , C25D5/22 , C25D17/06 , C25D21/12 , H01L21/288 , H01L21/304 , H01L21/321
CPC分类号： B24B37/26 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/22 , H01L21/2885 , H01L21/3212
摘要： The present invention deposits a conductive material from an electrolyte solution to a predetermined area of a wafer. The steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surface of the wafer, when the wafer is disposed between a cathode and an anode, and preventing accumulation of the conductive material to areas other than the predetermined area by mechanically polishing the other areas while the conductive material is being applied.
摘要翻译：本发明将导电材料从电解质溶液沉积到晶片的预定区域。在进行该应用时使用的步骤包括：当晶片设置在阴极和阳极之间时，使用设置在晶片表面上的电解质溶液将导电材料施加到晶片的预定区域，并且防止导电材料通过在施加导电材料的同时机械抛光其它区域而到达预定区域以外的区域。

2. 发明申请

WO02078903A3 METHOD AND APPARATUS FOR AVOIDING PARTICLE ACCUMULATION DURING AN ELECTROCHEMICAL PROCESS 审中-公开
标题翻译：在电化学过程中避免颗粒物累积的方法和装置
公开(公告)号：WO02078903A3
公开(公告)日：2003-03-20
申请号：PCT/US0209794
申请日：2002-03-26
申请人： NUTOOL INC
发明人： BASOL BULENT M , UZOH CYPRIAN , TALIEH HOMAYOUN
IPC分类号： B08B1/04 , B24B37/04 , B24B53/00 , B24B53/007 , C25D5/22 , C25D7/12 , C25F3/16 , H01L21/288 , H01L21/304 , H01L21/768 , C25B9/00 , C25D5/06 , H01L21/00
CPC分类号： B24B53/017 , B24B37/04 , B24B53/001 , C25D5/22 , C25D17/001 , H01L21/2885 , H01L21/7684 , H01L21/76877
摘要： Systems and methods to remove or lessen the size of metal particles that have formed on, and to limit the rate at which metal particles form or grow on, workpiece surface influencing devices used during electrodeposition are presented. According to an exemplary method, the workpiece surface influencing device (400) is occasionally placed in contact with a conditioning substrate coated with an inert material, and the bias applied to the electrodeposition system is reversed. According to another exemplary method, the workpiece surface influencing device (400) is conditioned using mechanical contact members, such as brushes (250), and conditioning of the workpiece surface influencing device (400) occurs, for example, through physical brushing of the workpiece surface influencing device (400) with the brushes (250). According to a further exemplary method, the workpiece surface influencing device (400) is rotated in different direction during electrodeposition.
摘要翻译：提出了用于去除或减小在电沉积期间使用的工件表面影响装置上形成金属颗粒的尺寸并限制金属颗粒形成或生长的速率的系统和方法。根据一个示例性方法，工件表面影响装置（400）偶尔地与涂覆有惰性材料的调理基板接触，并且施加到电沉积系统的偏压相反。根据另一示例性方法，使用诸如电刷（250）的机械接触构件对工件表面影响装置（400）进行调节，并且例如通过物理刷涂工件来发生工件表面影响装置（400）的调理表面影响装置（400）与刷子（250）。根据另一示例性方法，在电沉积期间，工件表面影响装置（400）沿不同方向旋转。

3. 发明申请

WO0059008A9 METHOD AND APPARATUS FOR FORMING AN ELECTRICAL CONTACT WITH A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：用半导体基板形成电接触的方法和装置
公开(公告)号：WO0059008A9
公开(公告)日：2002-06-27
申请号：PCT/US0008478
申请日：2000-03-29
申请人： NUTOOL INC
发明人： TALIEH HOMAYOUN , BASOL BULENT
IPC分类号： H01L21/00
CPC分类号： H01L21/6715 , C25D17/001 , H01L21/2885 , H01L21/67075
摘要： The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. Further, this invention can be used to dissolve/etch a metal layer from the periphery of the workpiece.
摘要翻译：本发明涉及一种使用与工件的外表面接触的液体导体对半导体工件的表面（晶片，平板，磁性膜等）进行电镀的方法和装置。液体导体储存在储存器中并通过入口通道泵送到液体室。液体导体被注入到液体室中，使得液体导体与工件的外表面接触。还设有可充气管以防止液体导体到达工件的背面。可以将电镀液施加到工件的前表面，其中保持环/密封件进一步防止电镀溶液和液体导体彼此接触。此外，本发明可用于从工件的周边溶解/蚀刻金属层。

4. 发明申请

WO0104944B1 METHOD AND APPARATUS FOR SIMULTANEOUSLY CLEANING AND ANNEALING A WORKPIECE 审中-公开
标题翻译：用于同时清洁和退火工件的方法和设备
公开(公告)号：WO0104944B1
公开(公告)日：2001-08-02
申请号：PCT/US0040354
申请日：2000-07-11
申请人： NUTOOL INC
发明人： UZOH CYPRIAN EMEKA , TALIEH HOMAYOUN
IPC分类号： C25D5/50 , H01L21/00 , H01L21/288 , H01L21/321 , H01L21/324 , B08B3/10
CPC分类号： H01L21/324 , C25D5/50 , H01L21/288 , H01L21/321 , H01L21/67051 , H01L21/67109 , Y10S438/906
摘要： This invention is directed to a method and apparatus for simultaneously cleaning and annealing a plated semiconductor workpiece. A chamber for simultaneously cleaning and annealing a semiconductor workpiece is provided herein. The method according to the present invention includes the steps rinsing the workpiece with mineral acids and DI water, then simultaneously cleaning/annealing the workpiece with heated deoxygenated DI water. By this present method, tool cross contamination by way of plated metal is greatly reduced, and also grain recovery and grain growth at room temperature is greatly accelerated. Thus, the annealing time of grain growth is dramatically reduced using the present method and apparatus.
摘要翻译：本发明涉及用于同时清洁和退火镀半导体工件的方法和设备。这里提供了用于同时清洁和退火半导体工件的腔室。根据本发明的方法包括以下步骤：用无机酸和DI水冲洗工件，然后用加热的脱氧DI水同时清洁/退火工件。通过本方法，通过电镀金属的工具交叉污染大大减少，并且在室温下的晶粒恢复和晶粒生长也大大加速。因此，使用本方法和装置，晶粒生长的退火时间显着减少。

5. 发明申请

WO2005105356A3 ELECTROCHEMICAL MECHANICAL PLANARIZATION PROCESS AND APPARATUS 审中-公开
标题翻译：电化学机械平面化方法及装置
公开(公告)号：WO2005105356A3
公开(公告)日：2007-01-04
申请号：PCT/US2005014040
申请日：2005-04-22
申请人： ASM NUTOOL INC , BASOL BULENT M , TALIEH HOMAYOUN
发明人： BASOL BULENT M , TALIEH HOMAYOUN
IPC分类号： B23H7/26 , B23H3/00 , B23H5/08 , B23H7/12 , B24B21/04 , B24B21/22 , B24B37/04 , B24B47/04 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/12 , C25F3/30 , C25F7/00 , H01L21/288 , H01L21/321 , H01L21/768 , H05K3/07
CPC分类号： C25F7/00 , B23H5/08 , B24B21/04 , B24B21/22 , B24B37/04 , B24B37/205 , B24B47/04 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/123 , H01L21/2885 , H01L21/3212 , H01L21/76877
摘要： A system for electrochemical mechanical polishing of a conductive surface of a wafer is provided. The system includes a wafer holder to hold the wafer and a belt pad disposed proximate to the wafer to polish the conductive surface. Application of a potential difference between the belt pad and the conductive surface result in material removal from the conductive surface. Electrical contact to the surface is provided through either contacts embedded in the belt pad or contacts placed adjacent the belt pad.
摘要翻译：提供了一种用于晶片的导电表面的电化学机械抛光的系统。该系统包括用于保持晶片的晶片保持器和靠近晶片设置的用于抛光导电表面的带垫。皮带垫和导电表面之间的电位差的施加导致从导电表面去除材料。通过嵌入在皮带垫中的触点或邻近皮带垫的触点提供与表面的电接触。

6. 发明申请

WO02100594A8 IMPROVED METHOD AND APPARATUS FOR BI-DIRECTIONALLY POLISHING A WORKPIECE 审中-公开
标题翻译：改进方法和设备，用于双向抛光工作
公开(公告)号：WO02100594A8
公开(公告)日：2003-02-20
申请号：PCT/US0218827
申请日：2002-06-12
申请人： NUTOOL INC
发明人： TALIEH HOMAYOUN , VOLODARSKY KONSTANTIN , ASHJAEE JALAL , YOUNG DOUGLAS W , PERLOV VULF , VELAZQUEZ EFRAIN , HENDERSON MARK , FREY BERNARD M
IPC分类号： B24B21/04 , B24B21/22 , B24B37/04 , H01L21/304 , B24B21/00
CPC分类号： B24B37/04 , B24B21/04 , B24B21/22
摘要： A chemical mechanical polishing apparatus and method uses a portion of a polishing pad (130) that is disposed under tension between a supply spool (160) and a receive spool (162) such that it will not degrade, a single drive system that allows for efficient bi-directional linear motion, and a mechanism that provides tension to either the supply spool or the receive spool and the other spool being locked during processing. If a new section of the polishing pad is needed, the same motor (770) that provided the tension is used to advance the polishing pad a determined amount. Further, during processing, a feedback mechanism (fig 8) is used to ensure that the tension of the polishing pad is consistently maintained.
摘要翻译：化学机械抛光装置和方法使用抛光垫（130）的设置在供应卷轴（160）和接收卷轴（162）之间的张力使其不会劣化的部分，单个驱动系统允许高效的双向直线运动，以及向供应卷轴或接收卷轴提供张力的机构，而另一个卷轴在加工期间被锁定。如果需要抛光垫的新部分，则使用提供张力的相同马达（770）将抛光垫推进确定的量。此外，在处理期间，使用反馈机构（图8）来确保抛光垫的张力一直保持。

7. 发明申请

WO02057514A3 METHOD AND APPARATUS FOR ELECTRODEPOSITION OR ETCHING OF UNIFORM FILM WITH MINIMAL EDGE EXCLUSION ON SUBSTRATE 审中-公开
标题翻译：用于电子沉积或消除基片上最小边缘的均匀膜的方法和装置
公开(公告)号：WO02057514A3
公开(公告)日：2003-02-06
申请号：PCT/US0151158
申请日：2001-11-02
申请人： NUTOOL INC
发明人： BASOL BULENT M , UZOH CYPRIAN , TALIEH HOMAYOUN
IPC分类号： C25D7/12 , C25D17/00 , C25D17/08 , C25D21/00 , H01L21/288 , H01L21/321 , H01L21/768 , C25D5/02 , C25D5/08 , C25F7/00
CPC分类号： C25D5/02 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/3212 , H01L21/76877
摘要： A system for depositing materials on a surface of a wafer includes an anode, a shaping plate, a liquid electrolyte contained between the anode and the surface of the wafer, and electrical contact members contacting selected locations on the surface of the wafer. The shaping plate defines a recessed edge and is supported between the anode and the surface of the wafer such that an upper surface of the shaping plate faces the surface of the substrate. The shaping plate can have a plurality of channels such that each puts the surface of the wafer in a fluid communication with the anode. The deposition process progresses through the shaping plate. The upper surface of the shaping plate has a substantially larger area than the area of the surface of the wafer. The electrical contact members contact the selected locations on the surface of the wafer through the recessed edge of the shaping plate such that when the wafer is rotated, the selected contact locations move over the shaping plate and are plated under an applied potential.
摘要翻译：用于在晶片的表面上沉积材料的系统包括阳极，成形板，包含在阳极和晶片表面之间的液体电解质，以及接触晶片表面上的选定位置的电接触构件。成形板限定凹入边缘并且被支撑在阳极和晶片的表面之间，使得成形板的上表面面向基板的表面。成形板可以具有多个通道，使得每个通道将晶片的表面与阳极流体连通。沉积工艺通过成型板进行。成形板的上表面具有比晶片表面的面积大得多的面积。电接触构件通过成形板的凹入边缘接触晶片表面上的选定位置，使得当晶片旋转时，所选择的接触位置在成形板上移动并在施加电位下进行电镀。

8. 发明申请

WO0059008A2 METHOD AND APPARATUS FOR FORMING AN ELECTRICAL CONTACT WITH A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：用半导体基板形成电接触的方法和装置
公开(公告)号：WO0059008A2
公开(公告)日：2000-10-05
申请号：PCT/US0008478
申请日：2000-03-29
申请人： NUTOOL INC
发明人： TALIEH HOMAYOUN , BASOL BULENT
IPC分类号： H01L21/00
CPC分类号： H01L21/6715 , C25D17/001 , H01L21/2885 , H01L21/67075
摘要： The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. In an alternative embodiment, electrical contacts may be formed using an inflatable tube that has either been coated with a conductive material or contains a conductive object. The inflatable tube further provides uniform contact and pressure along the periphery of the workpiece, which may not necessarily be perfectly flat, because the tube can conform according to the shape of the periphery of the workpiece. Further, this invention can be used to dissolve/etch a metal layer from the periphery of the workpiece.
摘要翻译：本发明涉及一种使用与工件的外表面接触的液体导体对半导体工件的表面（晶片，平板，磁性膜等）进行电镀的方法和装置。液体导体储存在储存器中并通过入口通道泵送到液体室。液体导体被注入到液体室中，使得液体导体与工件的外表面接触。还设有可充气管以防止液体导体到达工件的背面。可以将电镀液施加到工件的前表面，其中保持环/密封件进一步防止电镀溶液和液体导体彼此接触。在替代实施例中，可以使用已经涂覆有导电材料或包含导电物体的可充气管来形成电接触。可膨胀管还可以沿着工件的周边提供均匀的接触和压力，这可能不一定是完全平坦的，因为管可以根据工件的周边的形状来适应。此外，本发明可用于从工件的周边溶解/蚀刻金属层。

9. 发明申请

WO03041126A2 ELECTROCHEMICAL MECHANICAL PROCESSING WITH ADVANCIBLE SWEEPER 审中-公开
标题翻译：用先进的扫描器进行电化学机械加工
公开(公告)号：WO03041126A2
公开(公告)日：2003-05-15
申请号：PCT/US0235398
申请日：2002-11-04
申请人： NUTOOL INC
发明人： BASOL BULENT M , YAKUPOGLU HALIT N , UZOH CYPRIAN E , TALIEH HOMAYOUN
IPC分类号： B24B7/22 , B24B21/04 , B24B37/04 , C25D5/22 , C25D7/12 , C25F3/30 , H01L21/288 , H01L21/304 , H01L21/768 , H01L
CPC分类号： B24B21/04 , B24B7/228 , B24B37/04 , C25D5/22 , H01L21/2885 , H01L21/7684 , H01L21/76877
摘要： The present invention provides an apparatus for electrochemical mechanical processing of a surface of a workpiece by utilizing a process solution. The apparatus of the present invention includes an electrode touching the process solution, a belt workpiece surface influencing device extended between a supply spool and a receiving spool. During the process, the surface of the workpiece is placed in proximity of the workpiece surface influencing device and the process solution is flowed through the process section and onto the surface while a potential difference is applied between the electrode and the surface of the workpiece.
摘要翻译：本发明提供了一种利用工艺溶液对工件表面进行电化学机械处理的装置。本发明的设备包括接触处理溶液的电极，在供应卷轴和接收卷轴之间延伸的带工件表面影响装置。在此过程中，工件表面放置在工件表面影响装置附近，工艺溶液流过工艺部分并流到表面上，同时在电极和工件表面之间施加电位差。

10. 发明申请

WO02058116A3 INTEGRATED SYSTEM FOR PROCESSING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于加工半导体波形的集成系统
公开(公告)号：WO02058116A3
公开(公告)日：2003-02-27
申请号：PCT/US0200948
申请日：2002-01-14
申请人： NUTOOL INC
发明人： ASHJAEE JALAL , TALIEH HOMAYOUN
IPC分类号： C25F7/00 , H01L21/00 , H01L21/02 , H01L21/304 , H01L21/687
CPC分类号： H01L21/67173 , H01L21/67207 , H01L21/67219 , H01L21/6723
摘要： An integrated system for processing a plurality of wafers, having a conductive front surface, is provided. The system includes a plurality of processing subsystems for depositing on or removing metal from the front surfaces of the wafers. Each processing subsystem includes a process chamber and a cleaning chamber. The system also has a wafer handling subsystem for transporting each of the wafers into or out of the appropriate one of the plurality of processing subsystems. The plurality of processing subsystems and wafer handling subsystem form an integrated system.
摘要翻译：提供了一种用于处理具有导电前表面的多个晶片的集成系统。该系统包括用于从晶片的前表面沉积或从金属表面去除金属的多个处理子系统。每个处理子系统包括处理室和清洁室。该系统还具有晶片处理子系统，用于将每个晶片输送到多个处理子系统中的适当的一个处理子系统中或从其中移出。多个处理子系统和晶片处理子系统形成集成系统。

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