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1. 发明申请

WO2005105356A2 ELECTROCHEMICAL MECHANICAL PLANARIZATION PROCESS AND APPARATUS 审中-公开
标题翻译：电化学机械平面化方法及装置
公开(公告)号：WO2005105356A2
公开(公告)日：2005-11-10
申请号：PCT/US2005/014040
申请日：2005-04-22
申请人： ASM NUTOOL, INC. , BASOL, Bulent, M. , TALIEH, Homayoun
发明人： BASOL, Bulent, M. , TALIEH, Homayoun
IPC分类号： B23H3/00
CPC分类号： C25F7/00 , B23H5/08 , B24B21/04 , B24B21/22 , B24B37/04 , B24B37/205 , B24B47/04 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/123 , H01L21/2885 , H01L21/3212 , H01L21/76877
摘要： A system for electrochemical mechanical polishing of a conductive surface of a wafer is provided. The system includes a wafer holder to hold the wafer and a belt pad disposed proximate to the wafer to polish the conductive surface. Application of a potential difference between the belt pad and the conductive surface result in material removal from the conductive surface. Electrical contact to the surface is provided through either contacts embedded in the belt pad or contacts placed adjacent the belt pad.
摘要翻译：提供了一种用于晶片的导电表面的电化学机械抛光的系统。该系统包括用于保持晶片的晶片保持器和靠近晶片设置的用于抛光导电表面的带垫。皮带垫和导电表面之间的电位差的施加导致从导电表面去除材料。通过嵌入在皮带垫中的触点或邻近皮带垫的触点提供与表面的电接触。

2. 发明申请

WO2004044273A1 ELECTROPOLISHING SYSTEM AND PROCESS 审中-公开
标题翻译：电镀系统和工艺
公开(公告)号：WO2004044273A1
公开(公告)日：2004-05-27
申请号：PCT/GB2003/004809
申请日：2003-11-06
申请人： NUTOOL, INC , TALIEH, Homayoun , BASOL,Bulent, M.
发明人： TALIEH, Homayoun , BASOL,Bulent, M.
IPC分类号： C25F3/30
CPC分类号： B24B37/20 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/123 , C25F3/02 , C25F7/00 , H01L21/2885 , H01L21/32115 , H01L21/32125 , H01L21/67075 , H01L21/6715
摘要： The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a process electrode in a process solution contacts a process region on the conductive surface with the process solution while applying an electrical potential between the contact electrode and the process electrode to electropolish the surface of the conductive layer of the process region.
摘要翻译：本发明提供一种用于电解抛光半导体晶片的导电表面的方法。在该过程中，接触溶液中的接触电极与导电层表面上的接触区域接触接触溶液。此外，在该过程中，处理溶液中的处理电极与处理溶液接触导电表面上的工艺区域，同时在接触电极和处理电极之间施加电位，以电镀抛光工艺区域的导电层的表面。

3. 发明申请

WO2006102539A3 METHOD AND SYSTEM FOR ELECTROPROCESSING CONDUCTIVE LAYERS 审中-公开
公开(公告)号：WO2006102539A3
公开(公告)日：2006-09-28
申请号：PCT/US2006/010644
申请日：2006-03-23
申请人： ASM NUTOOL, INC. , BASOL, Bulent, M. , TALIEH, Homayoun
发明人： BASOL, Bulent, M. , TALIEH, Homayoun
IPC分类号： H01L21/4763 , H01L21/302 , H01L21/461
摘要： The invention provides a process for forming a planar copper structure on a wafer surface in a first module (501) and a second module (502) of a system (500). During the process, a copper layer is formed on the wafer surface by utilizing an electrochemical deposition process in the first module (501). After the deposition, the wafer is moved to the second module (502) of the system (500) and an electrochemical mechanical polishing process is applied to planarize the copper layer to a predetermined thickness. The first and second modules (501, 502) can be positioned in a cluster tool (500). The wafer is subsequently processed by selective copper CMP and selective barrier layer CMP, which are conducted in another cluster tool (520a or 520b).

4. 发明申请

WO2003079428A1 METHOD AND APPARATUS FOR INTEGRATED CHEMICAL MECHANICAL POLISHING OF COPPER AND BARRIER LAYERS 审中-公开
标题翻译：铜和铝合金层的综合化学机械抛光方法与装置
公开(公告)号：WO2003079428A1
公开(公告)日：2003-09-25
申请号：PCT/GB2003/001066
申请日：2003-03-13
申请人： NUTOOL, INC. , TALIEH, Homayoun , BROWNE, Robin, F. , BASON, Bulent , YOUNG, Douglas , WANG, Yuchun , TRUONG, Tuan
发明人： TALIEH, Homayoun , BROWNE, Robin, F. , BASON, Bulent , YOUNG, Douglas , WANG, Yuchun , TRUONG, Tuan
IPC分类号： H01L21/321
CPC分类号： H01L21/3212 , B24B21/04 , B24B37/04 , B24B49/16
摘要： A method of polishing a plurality of layers on a surface of a semiconductor wafer includes polishing a first layer such as copper using a polishing solution on a first portion of polishing pad and polishing another layer as a barrier layer using a polishing solution on another portion of polishing pad. Different or identical solutions may be used for each layer. The different portions of polishing pad, likewise, are preferably suited to polish a corresponding wafer layer. The different portions of polishing pad may be located on the same pad or on different pads. Also claimed are two different supply lines of polishing solutions to a single polishing pad.
摘要翻译：在半导体晶片的表面上研磨多层的方法包括：使用研磨液在抛光垫的第一部分上研磨诸如铜的第一层，并使用抛光溶液将另一层作为阻挡层研磨，抛光垫每个层可以使用不同的或相同的解决方案。抛光垫的不同部分同样优选适于抛光相应的晶片层。抛光垫的不同部分可以位于同一垫或不同垫上。还要求对于单个抛光垫的两种不同的抛光溶液供应线。

5. 发明申请

WO2003068421A2 INTEGRATED SYSTEM FOR PROCESSING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于加工半导体波形的集成系统
公开(公告)号：WO2003068421A2
公开(公告)日：2003-08-21
申请号：PCT/GB2003/000695
申请日：2003-02-17
申请人： NUTOOL INC , BROWNE, Robin, Forsythe , ASHJAEE, Jalal , GOVZMAN, Boris , FREY, Bernard, M. , NAGORSKI, Boguslav, A. , YOUNG, Douglas, W. , TALIEH, Homayoun , BASOL, Bulent, M.
发明人： ASHJAEE, Jalal , GOVZMAN, Boris , FREY, Bernard, M. , NAGORSKI, Boguslav, A. , YOUNG, Douglas, W. , TALIEH, Homayoun , BASOL, Bulent, M.
IPC分类号： B08B
CPC分类号： H01L21/67745 , G05B19/41865 , G05B2219/32272 , G05B2219/45031 , H01L21/67028 , H01L21/67051 , H01L21/67173 , H01L21/68707 , H01L21/68728 , Y02P90/20
摘要： An integrated process tool for chemical mechanical processing, cleaning and drying a semiconductor workpiece is provided. The integrated process tool includes a CMP module and a cleaning and drying module. After being processed, the workpiece is transported from the CMP module to the cleaning and drying module using a movable housing. In the cleaning and drying module, a cleaning mechanism is used to clean the workpiece while the workpiece is rotated and held by a support stucture of the movable housing. A drying mechanism of the cleaning and drying module picks up the workpiece from the moveable housing and spin dries it. Throughout the CMP process, cleaning and drying, the processed surface of the wafer faces down.
摘要翻译：提供了用于化学机械加工，清洁和干燥半导体工件的集成工艺工具。集成工艺工具包括CMP模块和清洁和干燥模块。在处理之后，使用可动壳体将工件从CMP模块传送到清洁和干燥模块。在清洁和干燥模块中，使用清洁机构来清洁工件，同时工件被可移动壳体的支撑结构旋转并保持。清洁和干燥模块的干燥机构从可移动的壳体上拾取工件并使其干燥。在整个CMP过程中，清洁和干燥，晶片的经处理表面面朝下。

6. 发明申请

WO2010051311A1 IMPROVED DRUM DESIGN FOR WEB PROCESSING 审中-公开
标题翻译：改进的喷墨设计用于网络处理
公开(公告)号：WO2010051311A1
公开(公告)日：2010-05-06
申请号：PCT/US2009/062370
申请日：2009-10-28
申请人： SOLOPOWER, INC. , PINARBASI, Mustafa , TALIEH, Homayoun , BASOL, Bulent, M.
发明人： PINARBASI, Mustafa , TALIEH, Homayoun , BASOL, Bulent, M.
IPC分类号： B01D69/00 , B05D3/06
CPC分类号： G06F3/1446 , B05D3/0493 , B05D2252/02 , C23C14/562 , G06F3/1438 , G09F9/30 , G09F9/301 , G09F9/33 , G09G3/2088 , G09G3/32 , G09G2300/026 , G09G2300/0452 , G09G2320/0626 , G09G2380/02 , G09G2380/06 , H01L31/03923 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： A roll to roll system for depositing a material on a workpiece is provided. In one embodiment, the system includes a drum, which rotates about an axis that is transverse to a process direction, and a number of PVD deposition units. The drum further includes a peripheral surface that includes a groove having a recessed workpiece contact surface that is parallel to the axis and disposed between a first side wall and a second side wall. A portion of the recessed workpiece contact surface supports a section of the workpiece and the first and second side walls maintain the section of the workpiece on the portion of the recessed workpiece contact surface as the workpiece is moved along the process direction. The PVD deposition units are disposed across from some of the portion of the peripheral surface and continuously deposit the material across a width of some of the section of the workpiece.
摘要翻译：提供了一种用于在工件上沉积材料的卷对卷系统。在一个实施例中，系统包括围绕横向于工艺方向的轴线旋转的滚筒和多个PVD沉积单元。滚筒还包括外围表面，该外围表面包括凹槽，凹槽具有凹入的工件接触表面，其平行于轴线并且设置在第一侧壁和第二侧壁之间。凹陷工件接触表面的一部分支撑工件的一部分，并且当工件沿着加工方向移动时，第一和第二侧壁将工件的部分保持在凹入工件接触表面的部分上。 PVD沉积单元跨越外围表面的一些部分设置，并且将材料连续地沉积在工件的一些部分的宽度上。

7. 发明申请

WO2005105356A3 ELECTROCHEMICAL MECHANICAL PLANARIZATION PROCESS AND APPARATUS 审中-公开
标题翻译：电化学机械平面化方法及装置
公开(公告)号：WO2005105356A3
公开(公告)日：2007-01-04
申请号：PCT/US2005014040
申请日：2005-04-22
申请人： ASM NUTOOL INC , BASOL BULENT M , TALIEH HOMAYOUN
发明人： BASOL BULENT M , TALIEH HOMAYOUN
IPC分类号： B23H7/26 , B23H3/00 , B23H5/08 , B23H7/12 , B24B21/04 , B24B21/22 , B24B37/04 , B24B47/04 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/12 , C25F3/30 , C25F7/00 , H01L21/288 , H01L21/321 , H01L21/768 , H05K3/07
CPC分类号： C25F7/00 , B23H5/08 , B24B21/04 , B24B21/22 , B24B37/04 , B24B37/205 , B24B47/04 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/123 , H01L21/2885 , H01L21/3212 , H01L21/76877
摘要： A system for electrochemical mechanical polishing of a conductive surface of a wafer is provided. The system includes a wafer holder to hold the wafer and a belt pad disposed proximate to the wafer to polish the conductive surface. Application of a potential difference between the belt pad and the conductive surface result in material removal from the conductive surface. Electrical contact to the surface is provided through either contacts embedded in the belt pad or contacts placed adjacent the belt pad.
摘要翻译：提供了一种用于晶片的导电表面的电化学机械抛光的系统。该系统包括用于保持晶片的晶片保持器和靠近晶片设置的用于抛光导电表面的带垫。皮带垫和导电表面之间的电位差的施加导致从导电表面去除材料。通过嵌入在皮带垫中的触点或邻近皮带垫的触点提供与表面的电接触。

8. 发明申请

WO2005045906A1 SYSTEM AND METHOD FOR ELECTROLESS SURFACE CONDITIONING 审中-公开
标题翻译：电解表面调节系统与方法
公开(公告)号：WO2005045906A1
公开(公告)日：2005-05-19
申请号：PCT/US2004/035783
申请日：2004-10-28
申请人： ASM NUTOOL, INC. , BASOL, Bulent, M. , MARCYK, Gerald , TALIEH, Homayoun
发明人： BASOL, Bulent, M. , MARCYK, Gerald , TALIEH, Homayoun
IPC分类号： H01L21/00
CPC分类号： H01L21/67155 , C23C18/1632 , C23C18/1692 , C23C18/1896 , H01L21/7684 , H01L21/76849 , H01L21/76864
摘要： A system and method for processing, in a single process tool, a surface of a semiconductor workpiece having a barrier layer and a conductor. The single process tool includes a first planarization module, a second planarization module, and an electroless deposition module. The conductor is planarized in the first planarization module until a portion of the barrier layer is exposed. In the second planarization module, the exposed portion of the barrier layer is removed from the surface. The workpiece is then moved to the electroless plating module, where a cap layer is formed on the planarized conductor.
摘要翻译：一种用于在单个工艺工具中处理具有阻挡层和导体的半导体工件的表面的系统和方法。单一工艺工具包括第一平面化模块，第二平面化模块和无电沉积模块。导体在第一平坦化模块中被平坦化，直到暴露出阻挡层的一部分。在第二平坦化模块中，阻挡层的暴露部分从表面去除。然后将工件移动到无电解电镀模块，其中在平坦化导体上形成覆盖层。

9. 发明申请

WO2006102539A2 METHOD AND SYSTEM FOR ELECTROPROCESSING CONDUCTIVE LAYERS 审中-公开
标题翻译：电导层的方法与系统
公开(公告)号：WO2006102539A2
公开(公告)日：2006-09-28
申请号：PCT/US2006010644
申请日：2006-03-23
申请人： ASM NUTOOL INC , BASOL BULENT M , TALIEH HOMAYOUN
发明人： BASOL BULENT M , TALIEH HOMAYOUN
IPC分类号： H01L21/4763 , H01L21/302 , H01L21/44 , H01L21/461
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , H01L21/32125 , H01L21/7684 , H01L21/76877
摘要： The invention provides a process for forming a planar copper structure on a wafer surface in a first module (501) and a second module (502) of a system (500). During the process, a copper layer is formed on the wafer surface by utilizing an electrochemical deposition process in the first module (501). After the deposition, the wafer is moved to the second module (502) of the system (500) and an electrochemical mechanical polishing process is applied to planarize the copper layer to a predetermined thickness. The first and second modules (501, 502) can be positioned in a cluster tool (500). The wafer is subsequently processed by selective copper CMP and selective barrier layer CMP, which are conducted in another cluster tool (520a or 520b).
摘要翻译：本发明提供一种在系统（500）的第一模块（501）和第二模块（502）中的晶片表面上形成平面铜结构的工艺。在该过程中，通过在第一模块（501）中利用电化学沉积工艺在晶片表面上形成铜层。沉积后，将晶片移动到系统（500）的第二模块（502），并且施加电化学机械抛光工艺以将铜层平坦化至预定厚度。第一和第二模块（501,502）可以被定位在群集工具（500）中。随后通过在另一个簇工具（520a或520b）中进行的选择性铜CMP和选择性阻挡层CMP处理该晶片。

10. 发明申请

WO2005046872A1 INTEGRATED CIRCUIT INTERCONNECT FABRICATION SYSTEMS AND METHODS 审中-公开
标题翻译：集成电路互连制造系统和方法
公开(公告)号：WO2005046872A1
公开(公告)日：2005-05-26
申请号：PCT/US2004/036688
申请日：2004-11-03
申请人： ASM NUTOOL, INC. , BASOL, Bulent, M. , TALIEH, Homayoun
发明人： BASOL, Bulent, M. , TALIEH, Homayoun
IPC分类号： B02C1/00
CPC分类号： H01L21/7684 , B23H5/08 , H01L21/67219
摘要： A system (100) for processing a conductive surface on a wafer comprises an electrochemical mechanical processing (ECMPR) module (106) configured to form a substantially planarized conductive layer on the front surface of the wafer, a chamber within the ECMPR module configured to remove conductive material from an edge region of the wafer, a chemical mechanical polish CMP module (107) configured to receive the wafer from the ECMPR module and polish the planarized conductive layer to form the metallic interconnect structure, and a robot (111) configured to transfer the wafer from the ECMPR module (CMP) module. In one aspect of the invention, the ECMPR module deposits material on the front surface of the wafer. The ECMPR module removes at least a portion of the conductive layer from the front surface of the wafer. Advantages of the invention include improved control of deposited metal to improve device consistency and yield.
摘要翻译：用于处理晶片上的导电表面的系统（100）包括电化学机械处理（ECMPR）模块（106），其被配置为在所述晶片的前表面上形成基本平坦化的导电层，所述ECMPR模块内的室被配置为移除导电材料，来自晶片的边缘区域的化学机械抛光CMP模块（107），被配置为从ECMPR模块接收晶片并抛光平坦化的导电层以形成金属互连结构;以及机器人（111）来自ECMPR模块（CMP）模块的晶片。在本发明的一个方面，ECMPR模块将材料沉积在晶片的前表面上。 ECMPR模块从晶片的前表面去除导电层的至少一部分。本发明的优点包括改善沉积金属的控制以提高器件的一致性和产率。

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