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    • 8. 发明申请
    • METHOD OF PROVIDING GALVANIC ISOLATION
    • 提供血液分离的方法
    • WO2011139397A2
    • 2011-11-10
    • PCT/US2011/026474
    • 2011-02-28
    • NATIONAL SEMICONDUCTOR CORPORATION
    • HOPPER, Peter, J.FRENCH, William
    • H01L27/12
    • H01L21/2007
    • A method of forming a semiconductor wafer with galvanic isolation attaches a non-conductive wafer (120) to a silicon wafer (110) to form a hybrid wafer (130). After a number of hybrid wafers (130) have been formed, the hybrid wafers (130) are simultaneously wet etched to thin the non-conductive wafer (120) of each hybrid wafer (130). Following this, a number of high-voltage devices (136) are formed on the thinned non-conductive wafer (120) of each hybrid wafer (130). Once the high- voltage devices (136) have formed, the silicon wafer (110) of each hybrid wafer (130) is thinned or removed so that the hybrid wafer (130) is suitable for packaging.
    • 形成具有电流隔离的半导体晶片的方法将非导电晶片(120)附接到硅晶片(110)以形成混合晶片(130)。 在已经形成多个混合晶片(130)之后,同时湿式蚀刻混合晶片(130)以使每个混合晶片(130)的非导电晶片(120)变薄。 接下来,在每个混合晶片(130)的变薄的非导电晶片(120)上形成多个高压器件(136)。 一旦已经形成高压装置(136),则每个混合晶片(130)的硅晶片(110)被减薄或去除,使得混合晶片(130)适于包装。