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    • 1. 发明申请
    • Formation of CIGS Absorber Layer by Atomic Layer Deposition
    • 通过原子层沉积形成CIGS吸收层
    • WO2005081789A3
    • 2007-02-08
    • PCT/US2005003748
    • 2005-02-07
    • NANOSOLAR INCSAGER BRIAN MROSCHEISEN MARTIN RLEIDHOLM CRAIG
    • SAGER BRIAN MROSCHEISEN MARTIN RLEIDHOLM CRAIG
    • C23C16/00
    • An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.
    • 可以使用原子层沉积反应在衬底上形成吸收层。 包含IB,IIIA和VIB族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的源原子层沉积到基底上形成,以形成 一个电影。 然后将VIA族元素并入膜中并退火以形成吸收层。 吸收层可以大于约25nm厚。 衬底可以被卷绕成一个或多个线圈,使得线圈的相邻匝不彼此接触。 卷绕的基板可以放置在处理室中,其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。 可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。
    • 5. 发明申请
    • METTALIC DISPERSION AND FORMATION OF COMPOUND FILM FOR PHOTOVOLTAIC DEVICE ACTIVE LAYER
    • 金属分散体和形成用于光伏器件活性层的复合膜
    • WO2006101986A2
    • 2006-09-28
    • PCT/US2006009534
    • 2006-03-16
    • NANOSOLAR INCROBINSON MATTHEW RROSCHEISEN MARTIN REBERSPACHER CHRISVAN DUREN JEROEN K JLEIDHOLM CRAIG R
    • ROBINSON MATTHEW RROSCHEISEN MARTIN REBERSPACHER CHRISVAN DUREN JEROEN K JLEIDHOLM CRAIG R
    • H02N6/00
    • H01L31/0322C23C18/02C23C18/1216C23C18/1258C23C18/1279C23C18/1287H01L21/02568H01L21/02601H01L21/02628H01L31/0749Y02E10/541
    • A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the IB, the IIIA, and, optionally, the VIA group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a light-absorbing layer in a photovoltaic device. Optionally, the compound film for an active layer of a photovoltaic device may be formed in two or more sub-layers. A first sub-layer having a first component of the active layer may be formed on a substrate with a first process. A second sub-layer including a second component of the active layer may then be formed using a second process such that the first sublayer is disposed between the second sub-layer and the substrate. The second component may have a different chemical composition than the first component. The first and/or second sub-layer may comprise one or more components in the form of particles and/or globules. This procedure may be repeated any number of times for any number of sub-layers so that active layer can be built up sequentially. The different chemical compositions of the components in the sub-layers can provide the active layer with a graded bandgap.
    • 可以通过配制由IB,IIIA和任选地具有受控整体组成的元素的VIA族组成的元素纳米颗粒的混合物来形成化合物膜。 将纳米颗粒混合物与镓的纳米金属的悬浮液组合以形成分散体。 可以将分散体沉积在基底上以在基底上形成层。 然后可以在合适的气氛中反应该层以形成化合物膜。 复合膜可以用作光伏器件中的光吸收层。 可选地,用于光伏器件的有源层的化合物膜可以形成为两个或更多个子层。 具有有源层的第一分量的第一子层可以用第一工艺形成在衬底上。 然后可以使用第二工序形成包括有源层的第二部件的第二子层,使得第一子层设置在第二子层和衬底之间。 第二组分可以具有与第一组分不同的化学组成。 第一和/或第二子层可以包括颗粒和/或小球形式的一种或多种组分。 对于任何数量的子层,该过程可以重复任意次数,以便可以顺序地建立活动层。 子层中组分的不同化学组成可以为活性层提供渐变的带隙。