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1. 发明申请

WO2007022221A3 PHOTOVOLATIC DEVICES WITH CONDUCTIVE BARRIER LAYERS AND FOIL SUBSTRATES 审中-公开
标题翻译：具有导电障碍层和基底的光电器件
公开(公告)号：WO2007022221A3
公开(公告)日：2007-10-18
申请号：PCT/US2006031906
申请日：2006-08-16
申请人： NANOSOLAR INC , LEIDHOLM CRAIG R , BOLLMAN BRENT , SHEATS JAMES R , KAO SAM , ROSCHEISEN MARTIN R
发明人： LEIDHOLM CRAIG R , BOLLMAN BRENT , SHEATS JAMES R , KAO SAM , ROSCHEISEN MARTIN R
IPC分类号： H02N6/00
CPC分类号： B82Y10/00 , H01L31/022425 , H01L31/02245 , H01L31/03928 , H01L31/046 , H01L31/0465 , H01L31/0512 , H01L31/0749 , H01L51/5203 , H01L2251/5338 , H02S20/23 , Y02B10/12 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically conductive diffusion barrier layer, and at least one electrically conductive electrode layer above the diffusion barrier layer. The diffusion barrier layer may prevent chemical interaction between the aluminum foil substrate and the electrode layer. An absorber layer may be formed on the substrate. In one embodiment, the absorber layer may be a non-silicon absorber layer. In another embodiment, the absorber layer may be an amorphous silicon (doped or undoped) absorber layer. Optionally, the absorber layer may be based on organic and/or inorganic materials.
摘要翻译：为在箔基片上形成的吸收层提供了方法和装置。在一个实施例中，制造光伏器件的方法可以包括提供包括至少一个导电铝箔衬底，至少一个导电扩散阻挡层和在扩散阻挡层上方的至少一个导电电极层的衬底。扩散阻挡层可以防止铝箔衬底和电极层之间的化学相互作用。可以在基板上形成吸收层。在一个实施例中，吸收层可以是非硅吸收层。在另一个实施例中，吸收层可以是非晶硅（掺杂或未掺杂）吸收层。任选地，吸收层可以基于有机和/或无机材料。

2. 发明申请

WO2006101986A2 METTALIC DISPERSION AND FORMATION OF COMPOUND FILM FOR PHOTOVOLTAIC DEVICE ACTIVE LAYER 审中-公开
标题翻译：金属分散体和形成用于光伏器件活性层的复合膜
公开(公告)号：WO2006101986A2
公开(公告)日：2006-09-28
申请号：PCT/US2006009534
申请日：2006-03-16
申请人： NANOSOLAR INC , ROBINSON MATTHEW R , ROSCHEISEN MARTIN R , EBERSPACHER CHRIS , VAN DUREN JEROEN K J , LEIDHOLM CRAIG R
发明人： ROBINSON MATTHEW R , ROSCHEISEN MARTIN R , EBERSPACHER CHRIS , VAN DUREN JEROEN K J , LEIDHOLM CRAIG R
IPC分类号： H02N6/00
CPC分类号： H01L31/0322 , C23C18/02 , C23C18/1216 , C23C18/1258 , C23C18/1279 , C23C18/1287 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L31/0749 , Y02E10/541
摘要： A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the IB, the IIIA, and, optionally, the VIA group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a light-absorbing layer in a photovoltaic device. Optionally, the compound film for an active layer of a photovoltaic device may be formed in two or more sub-layers. A first sub-layer having a first component of the active layer may be formed on a substrate with a first process. A second sub-layer including a second component of the active layer may then be formed using a second process such that the first sublayer is disposed between the second sub-layer and the substrate. The second component may have a different chemical composition than the first component. The first and/or second sub-layer may comprise one or more components in the form of particles and/or globules. This procedure may be repeated any number of times for any number of sub-layers so that active layer can be built up sequentially. The different chemical compositions of the components in the sub-layers can provide the active layer with a graded bandgap.
摘要翻译：可以通过配制由IB，IIIA和任选地具有受控整体组成的元素的VIA族组成的元素纳米颗粒的混合物来形成化合物膜。将纳米颗粒混合物与镓的纳米金属的悬浮液组合以形成分散体。可以将分散体沉积在基底上以在基底上形成层。然后可以在合适的气氛中反应该层以形成化合物膜。复合膜可以用作光伏器件中的光吸收层。可选地，用于光伏器件的有源层的化合物膜可以形成为两个或更多个子层。具有有源层的第一分量的第一子层可以用第一工艺形成在衬底上。然后可以使用第二工序形成包括有源层的第二部件的第二子层，使得第一子层设置在第二子层和衬底之间。第二组分可以具有与第一组分不同的化学组成。第一和/或第二子层可以包括颗粒和/或小球形式的一种或多种组分。对于任何数量的子层，该过程可以重复任意次数，以便可以顺序地建立活动层。子层中组分的不同化学组成可以为活性层提供渐变的带隙。

3. 发明申请

WO2009151665A3 METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A GROUP VIA ENVIRONMENT 审中-公开
标题翻译：用于通过环境加工前驱层的方法和装置
公开(公告)号：WO2009151665A3
公开(公告)日：2010-03-04
申请号：PCT/US2009036083
申请日：2009-03-04
申请人： BOLLMAN BRENT , LEIDHOLM CRAIG R , STANLEY NATHANIEL , RAIL MATTHEW
发明人： BOLLMAN BRENT , LEIDHOLM CRAIG R , STANLEY NATHANIEL , RAIL MATTHEW
IPC分类号： H01L31/042 , H01L21/20 , H01L21/324
CPC分类号： H01L21/02614 , H01L21/02568 , H01L21/02601 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA- chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in one or more steps in a VIA environment.
摘要翻译：公开了用于形成IB-III族 - 硫族化合物化合物的膜的前体材料的高通量印刷的方法和装置。在一个实施方案中，该方法包括在基底上形成前体层，随后在VIA环境中以一个或多个步骤处理前体。

4. 发明申请

WO2007101138A2 HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM INTER-METALLIC NANOFLAKE PARTICLES 审中-公开
标题翻译：来自金属间纳米颗粒的半导体前驱层的高通量印刷
公开(公告)号：WO2007101138A2
公开(公告)日：2007-09-07
申请号：PCT/US2007062766
申请日：2007-02-23
申请人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
发明人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
CPC分类号： H01L31/06 , B82Y30/00 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C18/1283 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, , form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. . In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要翻译：提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在选择性力沉降之后。特别地，平面颗粒更容易分散，形成更密集的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有高纵横比的纳米片。由纳米片形成的致密膜特别适用于形成光电器件。。在一个实施方案中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片（微花纹或纳米薄片）。

5. 发明申请

WO2007101136A3 HIGH-THROUGHPUT FORMATION OF SEMICONDUCTOR LAYER BY USE OF CHALCOGEN AND INTER-METALLIC MATERIAL 审中-公开
标题翻译：通过使用CHALCOGEN和金属间材料形成半导体层的高通量
公开(公告)号：WO2007101136A3
公开(公告)日：2008-03-06
申请号：PCT/US2007062764
申请日：2007-02-23
申请人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
发明人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
IPC分类号： B05D3/00 , H01L31/032 , H01L31/0336
CPC分类号： H01L31/0322 , C22C1/002 , H01L31/06 , H01L31/0749 , H01L31/18 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IDA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen- free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.
摘要翻译：公开了一种通过使用含硫属原子的蒸气形成半导体前体层的高通量方法。在一个实施方案中，该方法包括形成包含任何形状的组IB和/或组IDA颗粒的前体材料。该方法可以包括在衬底的表面上形成前体材料的前体层。该方法还可以包括将基本上无氧的硫属元素气氛中的颗粒前体材料加热到足以使颗粒反应并从硫族化物颗粒中释放硫属元素的处理温度，其中硫族元素呈现液体形式并用作助熔剂以改善元素的混合以期望的化学计量比形成IB-IIIA族硫族化合物膜。硫属化合物气氛可以在处理温度下提供大于或等于前体层中液态硫属元素的蒸气压的分压。

6. 发明申请

WO2007101135A2 HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM INTER-METALLIC MICROFLAKE PARTICLES 审中-公开
标题翻译：来自金属微细颗粒的半导体前驱层的高通量印刷
公开(公告)号：WO2007101135A2
公开(公告)日：2007-09-07
申请号：PCT/US2007062763
申请日：2007-02-23
申请人： VAN DUREN JEROEN K J , ROBINSON MATTHEW R , LEIDHOLM CRAIG R
发明人： VAN DUREN JEROEN K J , ROBINSON MATTHEW R , LEIDHOLM CRAIG R
CPC分类号： H01L31/18 , H01L31/0322 , H01L31/06 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a' high aspect ratio. The resulting dense film formed from microflakes is particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要翻译：提供了用于从微片粒子高通量印刷半导体前体层的方法和装置。在一个实施方案中，该方法包括在合适的条件下，在合适的载体中转化非平面或平面前体材料，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在沉降之后。特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有“高纵横比”的微片。由微片形成的所得致密膜在形成光伏器件中特别有用。在一个实施方案中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片（微花纹或纳米薄片）。

7. 发明申请

WO2007101138A3 HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM INTER-METALLIC NANOFLAKE PARTICLES 审中-公开
标题翻译：从金属间纳米克粒子高通量印刷半导体前体层
公开(公告)号：WO2007101138A3
公开(公告)日：2008-10-23
申请号：PCT/US2007062766
申请日：2007-02-23
申请人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
发明人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
IPC分类号： H01L31/00 , B05D1/12 , B05D3/00 , B05D7/00 , B05D7/24
CPC分类号： H01L31/06 , B82Y30/00 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C18/1283 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, , form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. . In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要翻译：提供了用于在适当的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以形成具有与原料或前体材料的化学计量比的元素的化学计量比的平面颗粒的分散体，即使在选择力沉降之后。具体而言，平面颗粒更容易分散，形成更密集的涂层（或形成具有更多颗粒间接触面积的涂层），并且在比由球形纳米颗粒制成的对应物更低的温度和/或时间下退火成稠合的致密膜。这些平面颗粒可以是具有高纵横比的纳米薄片。由纳米薄片形成的致密薄膜在形成光伏器件中特别有用。。在一个实施方案中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片颗粒（微米薄片或纳米薄片）。

8. 发明申请

WO2007101099A3 HIGH-THROUGHPUT PRINTING OF CHALCOGEN LAYER AND THE USE OF AN INTER-METALLIC MATERIAL 审中-公开
标题翻译：高致密度的印迹层和金属间材料的使用
公开(公告)号：WO2007101099A3
公开(公告)日：2007-11-22
申请号：PCT/US2007062694
申请日：2007-02-23
申请人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
发明人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
IPC分类号： H01L21/336
CPC分类号： C23C18/1283 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , H01L31/0322 , H01L31/06 , H01L31/0749 , H01L31/18 , Y02E10/541
摘要： Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA- chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, wherein the precursor layer comprises one or more discrete layers. The layers may include at least a first layer containing one or more group IB elements and two or more different group IDA elements and at least a second layer containing elemental chalcogen particles. The precursor layer may be heated to a temperature sufficient to melt the chalcogen particles and to react the chalcogen particles with the one or more group IB elements and group IDA elements in the precursor layer to form a film of a group IB-IIIA- chalcogenide compound. At least one set of the particles in the precursor layer are inter-metallic particles containing at least one group IB-IIIA inter-metallic alloy phase. The method may also include making a film of group IB-IIIA- chalcogenide compound that includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
摘要翻译：公开了用于形成IB-IIIA族硫族化合物膜的前体材料的高通量印刷的方法和设备。在一个实施例中，该方法包括在衬底上形成前体层，其中该前体层包括一个或多个分立层。这些层可以至少包括含有一种或多种IB族元素和两种或多种不同的IDA族元素的第一层和至少一种含有元素硫族元素颗粒的第二层。可将前体层加热至足以熔化硫族元素颗粒并使硫族元素颗粒与前体层中的一种或多种IB族元素和IDA族元素反应以形成IB-IIIA族硫属元素化物化合物膜。前体层中的至少一组颗粒是含有至少一种IB-IIIA族金属间合金相的金属间颗粒。该方法还可以包括制备IB-IIIA族硫族化合物膜，其包括混合纳米粒子和/或纳米小球和/或纳米小滴以形成墨水，将墨水沉积在基底上，加热以熔化多余的硫族元素并反应具有IB族和IIIA族元素和/或硫属元素的硫属元素以形成致密膜。

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