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1. 发明申请

WO2007016169A1 PHASE CHANGE MEMORY CELL AND METHOD OF FORMATION 审中-公开
标题翻译：相变记忆细胞和形成方法
公开(公告)号：WO2007016169A1
公开(公告)日：2007-02-08
申请号：PCT/US2006/029051
申请日：2006-07-26
申请人： MICRON TECHNOLOGY, INC. , CAMPBELL, Kristy, A.
发明人： CAMPBELL, Kristy, A.
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/144
摘要： A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode (12) and a chalcogenide comprising phase change material layer (18) over the first electrode. A metal -chalcogenide layer (20) is over the phase change material layer. The metal chalcogenide layer is tin- telluride. A second electrode (24) is over the metal-chalcogenide layer. The memory element is configured to have reduced current requirements .
摘要翻译：提供了一种相变存储元件及其形成方法。存储元件包括在第一电极上方的包括相变材料层（18）的第一电极（12）和硫族化物。金属 - 硫族化物层（20）位于相变材料层的上方。金属硫族化物层是锡 - 碲化物。第二电极（24）在金属 - 硫属化物层上方。存储器元件被配置为具有减小的电流要求。

2. 发明申请

WO2004081617A2 CHALCOGENIDE GLASS CONSTANT CURRENT DEVICE, AND ITS METHOD OF FABRICATION AND OPERATION 审中-公开
标题翻译： CHALCOGENIDE玻璃恒定电流装置及其制造和操作方法
公开(公告)号：WO2004081617A2
公开(公告)日：2004-09-23
申请号：PCT/US2004/007514
申请日：2004-03-12
申请人： MICRON TECHNOLOGY, INC. , CAMPBELL, Kristy, A. , GILTON, Terry, L. , MOORE, John, T. , BROOKS, Joseph, F.
发明人： CAMPBELL, Kristy, A. , GILTON, Terry, L. , MOORE, John, T. , BROOKS, Joseph, F.
IPC分类号： G02B
CPC分类号： C03C3/321 , C03C17/02 , G11C13/0004 , G11C13/0011 , G11C27/00 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/1608 , H01L45/1641
摘要： The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.
摘要翻译：本发明涉及用于提供两端恒流装置的方法和装置及其操作。本发明提供一种恒定电流器件，其在至少约700mV的施加电压范围内保持恒定电流。本发明还提供了通过施加正电位以减小恒定电流值或施加比现有恒定电流电压上限更负的电压来改变和重置恒定电流装置中的恒定电流值的方法，由此重置或将其恒定电流水平提高到其原始制造值。本发明还提供一种将存储器件形成和转换成恒流器件的方法。本发明还提供了一种使用恒流装置作为模拟存储装置的方法。

3. 发明申请

WO2007078664A3 PHASE CHANGE CURRENT DENSITY CONTROL STRUCTURE 审中-公开
公开(公告)号：WO2007078664A3
公开(公告)日：2007-07-12
申请号：PCT/US2006/047202
申请日：2006-12-12
申请人： MICRON TECHNOLOGY, INC. , DALEY, Jon , CAMPBELL, Kristy, A.
发明人： DALEY, Jon , CAMPBELL, Kristy, A.
IPC分类号： H01L45/00
摘要： A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

4. 发明申请

WO2003065456A3 METHODS OF FORMING NON-VOLATILE RESISTANCE VARIABLE DEVICES AND METHODS OF FORMING SILVER SELENIDE COMPRISING STRUCTURES 审中-公开
公开(公告)号：WO2003065456A3
公开(公告)日：2003-08-07
申请号：PCT/US2003/001498
申请日：2003-01-21
申请人： MICRON TECHNOLOGY, INC.
发明人： GILTON, Terry, L. , CAMPBELL, Kristy, A. , MOORE, John, T.
IPC分类号： H01L27/10
摘要： A method of forming a non-volatile resistance variable device includes forming a patterned mass comprising elemental silver over a substrate. A layer comprising elemental selenium is formed over the substrate and including the patterned mass comprising elemental silver. The substrate is exposed to conditions effective to react only some of the elemental selenium with the elemental silver to form the patterned mass to comprise silver selenide. Unreacted elemental selenium is removed from the substrate. A first conductive electrode is provided in electrical connection with one portion of the patterned mass comprising silver selenide. A germanium selenide comprising material is provided in electrical connection with another portion of the patterned mass comprising silver selenide. A second conductive electrode is provided in electrical connection with the germanium selenide comprising material.

5. 发明申请

WO2003019691A2 METHOD OF FORMING NON-VOLATILE RESISTANCE VARIABLE DEVICES AND METHOD OF FORMING A PROGRAMMABLE MEMORY CELL OF MEMORY CIRCUITRY 审中-公开
标题翻译：形成非易失性电阻可变器件的方法和形成存储器电路的可编程存储器单元的方法
公开(公告)号：WO2003019691A2
公开(公告)日：2003-03-06
申请号：PCT/US2002/027929
申请日：2002-08-28
申请人： MICRON TECHNOLOGY, INC.
发明人： CAMPBELL, Kristy, A. , MOORE, John, T.
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L45/04 , H01L45/085 , H01L45/143 , H01L45/1616 , H01L45/1658 , H01L45/1683
摘要： A first conductive electrode material is formed on a substrate. Chalcogenide comprising material is formed thereover. The chalcogenide material comprises A x Se y . A silver comprising layer is formed over the chalcogenide material. The silver is irradiated effective to break a chalcogenide bond of the chalcogenide material at an interface of the silver comprising layer and chalcogenide material and diffuse at least some of the silver into the chalcogenide material. After the irradiating, the chalcogenide material outer surface is exposed to an iodine comprising fluid effective to reduce roughness of the chalcogenide material outer surface from what it was prior to the exposing. After the exposing, a second conductive electrode material is deposited over the chalcogenide material, and which is continuous and completely covering at least over the chalcogenide material, and the second conductive electrode material is formed into an electrode of the device.
摘要翻译：在基板上形成第一导电电极材料。在其上形成包含硫属元素的材料。硫族化物材料包括A> x y <。在硫族化物材料上形成含银层。银被照射有效地破坏硫族化物材料在含银层和硫族化物材料的界面处的硫属化物键，并将至少一些银扩散到硫族化物材料中。在照射之后，硫族化物材料外表面暴露于含有碘的流体，其有效地减少了硫族化物材料外表面的暴露之前的粗糙度。曝光后，将第二导电电极材料沉积在硫族化物材料上，并且至少在硫族化物材料上连续并完全覆盖，并且将第二导电电极材料形成为器件的电极。

6. 发明申请

WO2006019845A1 RESISTANCE VARIABLE MEMORY DEVICE AND METHOD OF FABRICATION 审中-公开
标题翻译：电阻可变存储器件和制造方法
公开(公告)号：WO2006019845A1
公开(公告)日：2006-02-23
申请号：PCT/US2005/024899
申请日：2005-07-14
申请人： MICRON TECHNOLOGY, INC. , CAMPBELL, Kristy, A.
发明人： CAMPBELL, Kristy, A.
IPC分类号： G11C16/02
CPC分类号： H01L45/143 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1675 , Y10S438/90
摘要： Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.
摘要翻译：用于提供防结块和热稳定性的电阻可变记忆装置的方法和装置。根据一个实施例，提供了电阻可变存储器件，其具有靠近至少一个硫族化物玻璃层的至少一个锡 - 硫族化物层。本发明还涉及形成这种存储器件的方法。

7. 发明申请

WO2003071614A2 SILVER-SELENIDE/CHALCOGENIDE GLASS STACK FOR RESISTANCE VARIABLE MEMORY 审中-公开
标题翻译：用于电阻可变存储器的银 - 硒化物/氯乙烯玻璃堆叠
公开(公告)号：WO2003071614A2
公开(公告)日：2003-08-28
申请号：PCT/US2003/004385
申请日：2003-02-14
申请人： MICRON TECHNOLOGY, INC.
发明人： CAMPBELL, Kristy, A. , MOORE, John
IPC分类号： H01L45/00
CPC分类号： G11C13/0011 , G11C2213/51 , G11C2213/56 , H01L45/085 , H01L45/1233 , H01L45/143 , H01L45/1616 , H01L45/1625
摘要： The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a Ge x Se 100-x composition.
摘要翻译：本发明涉及用于提供具有改进的数据保持和切换特性的电阻可变存储元件的方法和装置。根据本发明的实施例，提供了一种电阻可变存储元件，其在玻璃层之间具有至少一个硒化银层，其中至少一个玻璃层是硫族化物玻璃，优选具有GexSe100-x组成。

8. 发明申请

WO2006132813A1 MEMORY DEVICE WITH SWITCHING GLASS LAYER 审中-公开
标题翻译：具有开关玻璃层的存储器件
公开(公告)号：WO2006132813A1
公开(公告)日：2006-12-14
申请号：PCT/US2006/020242
申请日：2006-05-26
申请人： MICRON TECHNOLOGY, INC. , CAMPBELL, Kristy, A.
发明人： CAMPBELL, Kristy, A.
IPC分类号： H01L45/00 , G11C16/02 , G11C13/02
CPC分类号： H01L45/143 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1675 , Y10S438/90
摘要： A memory device (100) , such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass (18) in contact with a metal-chalcogenide (20) such as tin selenide and methods of forming such a memory deviceare disclosed.
摘要翻译：公开了一种包括与金属硫属化物（20）如硒化锡接触的碲化锗玻璃（18）的硫族化物玻璃骨架材料的诸如PCRAM的记忆装置（100），以及形成这种存储装置的方法。

9. 发明申请

WO2006091480A1 SNSE-BASED LIMITED REPROGRAMMABLE CELL 审中-公开
标题翻译： SNSE-BASED LIMITED可转让电池
公开(公告)号：WO2006091480A1
公开(公告)日：2006-08-31
申请号：PCT/US2006/005618
申请日：2006-02-17
申请人： MICRON TECHNOLOGY, INC. , CAMPBELL, Kristy, A.
发明人： CAMPBELL, Kristy, A.
IPC分类号： H01L45/00 , G11C16/02
CPC分类号： H01L45/085 , G11C13/0011 , G11C13/0069 , G11C2013/009 , G11C2213/56 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1675
摘要： Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a second electrode and a layer of a chalcogenide or germanium comprising material between the first electrode and the second electrode. The memory device further includes a tin-chalcogenide layer between the chalcogenide or germanium comprising material layer and the second electrode.
摘要翻译：用于提供可被编程有限次数的存储器件的方法和装置。根据示例性实施例，存储器件及其形成方法在第一电极和第二电极之间提供第一电极，第二电极和包含硫族化物或锗的材料层。记忆装置还包括在硫属化物或包含锗的材料层和第二电极之间的锡 - 硫族化物层。

10. 发明申请

WO2003019691A3 MANUFACTURING OF NON-VOLATILE RESISTANCE VARIABLE DEVICES AND PROGRAMMABLE MEMORY CELLS 审中-公开
公开(公告)号：WO2003019691A3
公开(公告)日：2003-03-06
申请号：PCT/US2002/027929
申请日：2002-08-28
申请人： MICRON TECHNOLOGY, INC.
发明人： CAMPBELL, Kristy, A. , MOORE, John, T.
IPC分类号： H01L45/00
摘要： A first conductive electrode material (16) is formed on a substrate (12). Chalcogenide comprising material (22) is formed thereover. The chalcogenide material comprises A x Se y , A preferable being Ge and Si. A silver comprising layer (24) is formed over the chalcogenide material. The silver is irradiated effective to break a chalcogenide bond of the chalcogenide material at an interface of the silver comprising layer and chalcogenide material and diffuse at least some of the silver into the chalcogenide material. After the irradiating, the chalcogenide material outer surface is exposed to an iodine comprising fluid effective to reduce roughness of the chalcogenide material outer surface from what it was prior to the exposing. After the exposing, a second conductive electrode (26) material is deposited over the chalcogenide material, which is continuous and completely covering at least over the chalcogenide material, and the second conductive electrode material is formed into an electrode of the device.

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