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1. 发明申请

WO2009099769A3 DOUBLE MASK SELF-ALIGNED DOUBLE PATTERNING TECHNOLOGY (SADPT) PROCESS 审中-公开
标题翻译：双面掩模自对准双模式技术（SADPT）工艺
公开(公告)号：WO2009099769A3
公开(公告)日：2009-10-15
申请号：PCT/US2009031713
申请日：2009-01-22
申请人： LAM RES CORP , SADJADI S M REZA , LI LUMIN , ROMANO ANDREW R
发明人： SADJADI S M REZA , LI LUMIN , ROMANO ANDREW R
IPC分类号： H01L21/027
CPC分类号： H01L21/0337
摘要： A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.
摘要翻译：通过在无机掩模层上形成有机掩模层，在有机掩模层上形成含硅掩模层，在含硅掩模层上形成图案化掩模层，蚀刻，提供蚀刻层中提供特征的方法通过图案化掩模的含硅掩模层，在蚀刻的含硅掩模层上沉积聚合物，在聚合物上沉积含硅膜，平坦化含硅膜，选择性地除去离开含硅膜的聚合物蚀刻有机层，并蚀刻无机层。

2. 发明申请

WO2009085694A4 PROTECTIVE LAYER FOR IMPLANT PHOTORESIST 审中-公开
标题翻译：植入光敏剂保护层
公开(公告)号：WO2009085694A4
公开(公告)日：2009-10-29
申请号：PCT/US2008086825
申请日：2008-12-15
申请人： LAM RES CORP , ROMANO ANDREW R , SADJADI S M REZA
发明人： ROMANO ANDREW R , SADJADI S M REZA
IPC分类号： H01L21/027 , H01L21/265
CPC分类号： H01L21/266 , G03F7/40 , H01L21/0273 , H01L21/26513
摘要： A method for implanting a dopant in a substrate is provided. A patterned photoresist mask is formed over the substrate, wherein the patterned photoresist mask has patterned photoresist mask features. A protective layer is deposited on the patterned photoresist mask by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over surfaces of the patterned mask of photoresist material and a profile shaping phase for providing vertical sidewalls. A dopant is implanted into the substrate using an ion beam. The protective layer and photoresist mask are removed.
摘要翻译：提供了一种用于将掺杂剂注入到衬底中的方法。图案化的光刻胶掩模形成在衬底上，其中图案化的光刻胶掩模具有图案化的光刻胶掩模特征。通过执行循环沉积，在构图的光致抗蚀剂掩模上沉积保护层，其中每个循环包括用于在光致抗蚀剂材料的图案化掩模的表面上沉积沉积层的沉积阶段和用于提供垂直侧壁的轮廓成形阶段。使用离子束将掺杂剂注入到衬底中。保护层和光刻胶掩模被移除。

3. 发明申请

WO2009085694A3 PROTECTIVE LAYER FOR IMPLANT PHOTORESIST 审中-公开
标题翻译：植物保护层保护层
公开(公告)号：WO2009085694A3
公开(公告)日：2009-09-11
申请号：PCT/US2008086825
申请日：2008-12-15
申请人： LAM RES CORP , ROMANO ANDREW R , SADJADI S M REZA
发明人： ROMANO ANDREW R , SADJADI S M REZA
IPC分类号： H01L21/027 , H01L21/265
CPC分类号： H01L21/266 , G03F7/40 , H01L21/0273 , H01L21/26513
摘要： A method for implanting a dopant in a substrate is provided. A patterned photoresist mask is formed over the substrate, wherein the patterned photoresist mask has patterned photoresist mask features. A protective layer is deposited on the patterned photoresist mask by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over surfaces of the patterned mask of photoresist material and a profile shaping phase for providing vertical sidewalls. A dopant is implanted into the substrate using an ion beam. The protective layer and photoresist mask are removed.
摘要翻译：提供了一种用于在衬底中注入掺杂剂的方法。图案化的光致抗蚀剂掩模形成在衬底上，其中图案化的光刻胶掩模具有图案化的光刻胶掩模特征。通过执行循环沉积，在图案化的光致抗蚀剂掩模上沉积保护层，其中每个循环包括用于在光致抗蚀剂材料的图案化掩模的表面上沉积沉积层的沉积相和用于提供垂直侧壁的轮廓成形阶段。使用离子束将掺杂剂注入到衬底中。去除保护层和光刻胶掩模。

4. 发明申请

WO2009085598A3 PHOTORESIST DOUBLE PATTERNING 审中-公开
标题翻译：摄影师双重图案
公开(公告)号：WO2009085598A3
公开(公告)日：2009-09-11
申请号：PCT/US2008086095
申请日：2008-12-09
申请人： LAM RES CORP , SADJADI S M REZA , ROMANO ANDREW R
发明人： SADJADI S M REZA , ROMANO ANDREW R
IPC分类号： H01L21/027 , H01L21/3065
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/405 , H01L21/76816
摘要： A method for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. A protective coating is provided on the first PR mask by a process including at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.
摘要翻译：提供了蚀刻形成在基板上的蚀刻层的方法。在蚀刻层上提供具有第一掩模特征的第一光致抗蚀剂（PR）掩模。通过包括至少一个循环的工艺在第一PR掩模上提供保护涂层。每个循环包括（a）用于使用沉积气体在第一掩模特征的表面上沉积沉积层的沉积阶段，以及（b）用于使用轮廓成形气体成形沉积层的轮廓的轮廓成形阶段。在具有保护涂层的第一PR掩模上施加液体PR材料。 PR材料被图案化成第二掩模特征，其中第一和第二掩模特征形成第二PR掩模。通过第二PR掩模蚀刻蚀刻层。

5. 发明申请

WO2009062123A2 PITCH REDUCTION USING OXIDE SPACER 审中-公开
标题翻译：使用氧化物间隔物减少PITCH
公开(公告)号：WO2009062123A2
公开(公告)日：2009-05-14
申请号：PCT/US2008082915
申请日：2008-11-07
申请人： LAM RES CORP , KIM JISOO , CHIANG CONAN , SHINAGAWA JUN , SADJADI S M REZA
发明人： KIM JISOO , CHIANG CONAN , SHINAGAWA JUN , SADJADI S M REZA
IPC分类号： H01L21/027
CPC分类号： H01L21/31144 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/0337 , H01L21/0338 , H01L21/31612 , H01L21/31654 , H01L21/32139
摘要： A method for etching an etch layer disposed over a substrate and below an antireflective coating (ARC) layer and a patterned organic mask with mask features is provided. The substrate is placed in a process chamber. The ARC layer is opened. An oxide spacer deposition layer is formed. The oxide spacer deposition layer on the organic mask is partially removed, where at least the top portion of the oxide spacer deposition layer is removed. The organic mask and the ARC layer are removed by etching. The etch layer is etched through the sidewalls of the oxide spacer deposition layer. The substrate is removed from the process chamber.
摘要翻译：提供了一种用于蚀刻设置在基板上方并且在抗反射涂层（ARC）层下方的蚀刻层和具有掩模特征的图案化有机掩模的方法。将基板放置在处理室中。 ARC层打开。形成氧化物间隔物沉积层。部分去除有机掩模上的氧化物间隔物沉积层，其中氧化物间隔物沉积层的至少顶部被去除。通过蚀刻去除有机掩模和ARC层。通过氧化物隔离层沉积层的侧壁蚀刻蚀刻层。将衬底从处理室中取出。

6. 发明申请

WO2007041423A1 VERTICAL PROFILE FIXING 审中-公开
标题翻译：垂直轮廓固定
公开(公告)号：WO2007041423A1
公开(公告)日：2007-04-12
申请号：PCT/US2006038299
申请日：2006-09-29
申请人： LAM RES CORP , SADJADI S M REZA , CIRIGLIANO PETER , KIM JI SOO , HUANG ZHISONG , HUDSON ERIC A
发明人： SADJADI S M REZA , CIRIGLIANO PETER , KIM JI SOO , HUANG ZHISONG , HUDSON ERIC A
IPC分类号： H01L21/311 , G03F7/40 , H01L21/027
CPC分类号： H01L21/0273 , H01L21/31144
摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.
摘要翻译：提供了一种用于蚀刻蚀刻层中的特征的方法。在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。去除面具。

7. 发明申请

WO2010080655A3 SPACER FORMATION FOR ARRAY DOUBLE PATTERNING 审中-公开
标题翻译：阵列双重图案的间隔物形成
公开(公告)号：WO2010080655A3
公开(公告)日：2010-09-23
申请号：PCT/US2009069292
申请日：2009-12-22
申请人： LAM RES CORP , SADJADI S M REZA , JAIN AMIT
发明人： SADJADI S M REZA , JAIN AMIT
IPC分类号： H01L21/027
CPC分类号： H01L21/0337
摘要： A method for forming an array area with a surrounding periphery area, wherein a substrate is disposed under an etch layer, which is disposed under a patterned organic mask defining the array area and covers the entire periphery area is provided. The patterned organic mask is trimmed. An inorganic layer is deposited over the patterned organic mask where a thickness of the inorganic layer over the covered periphery area of the organic mask is greater than a thickness of the inorganic layer over the array area of the organic mask. The inorganic layer is etched back to expose the organic mask and form inorganic spacers in the array area, while leaving the organic mask in the periphery area unexposed. The organic mask exposed in the array area is stripped, while leaving the inorganic spacers in place and protecting the organic mask in the periphery area.
摘要翻译：一种用于形成具有周围外围区域的阵列区域的方法，其中衬底设置在蚀刻层下方，所述蚀刻层布置在限定阵列区域的图案化有机掩模下方并且覆盖整个外围区域。图案化的有机面膜被修剪。将无机层沉积在图案化的有机掩模上，其中有机掩模的被覆盖的外围区域上的无机层的厚度大于有机掩模的阵列区域上的无机层的厚度。回蚀无机层以暴露有机掩模并在阵列区域中形成无机间隔物，同时使周围区域中的有机掩模未暴露。暴露在阵列区域中的有机掩模被剥离，同时留下无机间隔物并保护外围区域中的有机掩模。

8. 发明申请

WO2007021540A3 ETCH FEATURES WITH REDUCED LINE EDGE ROUGHNESS 审中-公开
标题翻译：具有减少线路边缘粗糙度的蚀刻特征
公开(公告)号：WO2007021540A3
公开(公告)日：2007-12-21
申请号：PCT/US2006030028
申请日：2006-08-01
申请人： LAM RES CORP , SADJADI S M REZA , HUDSON ERIC A
发明人： SADJADI S M REZA , HUDSON ERIC A
IPC分类号： G03F7/40 , H01L21/027 , H01L21/311 , H01L21/3213
CPC分类号： G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0337 , H01L21/31144
摘要： A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A sidewall layer with a thickness less than 100 nm is formed over the sidewalls of the photoresist features by performing for a plurality of cycles. Each cycle comprises depositing a layer on the photoresist layer wherein the deposited layer has a thickness between a monolayer to 20 nm. Features are etched into the layer through the photoresist features. The photoresist layer and sidewall layer are stripped.
摘要翻译：提供了一种用于在具有减少的线边缘粗糙化的层中形成特征的方法。在该层上形成光致抗蚀剂层。光致抗蚀剂层被图案化以与光致抗蚀剂侧壁形成光致抗蚀剂特征。通过执行多个循环，在光致抗蚀剂特征的侧壁上形成厚度小于100nm的侧壁层。每个循环包括在光致抗蚀剂层上沉积层，其中沉积层的厚度在单层至20nm之间。通过光刻胶特征将特征蚀刻到该层中。光刻胶层和侧壁层被剥离。

9. 发明申请

WO2006135924A9 IMPROVEMENT OF ETCH RATE UNIFORMITY USING THE INDEPENDENT MOVEMENT OF ELECTRODE PIECES 审中-公开
标题翻译：使用电极片独立运动改进电压均匀性
公开(公告)号：WO2006135924A9
公开(公告)日：2007-02-22
申请号：PCT/US2006023114
申请日：2006-06-12
申请人： LAM RES CORP , KIM JISOO , CHOI DAE-HAN , SADJADI S M REZA
发明人： KIM JISOO , CHOI DAE-HAN , SADJADI S M REZA
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32568 , H01J37/32623
摘要： A plasma reactor comprises a chamber, a bottom electrode, a top electrode, a bottom grounded extension adjacent to and substantially encircling the bottom electrode. The top grounded extension adjacent to and substantially parallel to the top electrode. The top electrode is also grounded. The top grounded extension is capable of being independently raised or lowered to extend into a region above the bottom grounded extension.
摘要翻译：等离子体反应器包括腔室，底部电极，顶部电极，与底部电极相邻并且基本上环绕底部电极的底部接地延伸部。邻近并基本平行于顶部电极的顶部接地延伸部分。顶部电极也接地。顶部接地延伸部能够独立地升高或降低以延伸到底部接地延伸部上方的区域中。

10. 发明申请

WO2006104655A2 ETCH WITH PHOTORESIST MASK 审中-公开
标题翻译： ETCH与摄影师面具
公开(公告)号：WO2006104655A2
公开(公告)日：2006-10-05
申请号：PCT/US2006008306
申请日：2006-03-07
申请人： LAM RES CORP , KIM JISOO , LEE SANGHEON , WORSHAM BINET A , CHARATAN ROBERT , SADJADI S M REZA
发明人： KIM JISOO , LEE SANGHEON , WORSHAM BINET A , CHARATAN ROBERT , SADJADI S M REZA
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF 3 is provided into the plasma chamber. A plasma is formed from the NF 3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF 3 gas.
摘要翻译：提供了一种在衬底上蚀刻电介质层的方法。在电介质层上形成光致抗蚀剂掩模。将基板放置在等离子体处理室中。包含NF 3 N的蚀刻剂气体被提供到等离子体室中。从NF 3 N气体形成等离子体。通过来自NF 3 N 3气体的等离子体通过光致抗蚀剂掩模蚀刻电介质层。

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