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    • 5. 发明申请
    • ELECTRONIC DEVICE, METHOD, MONOMER AND POLYMER
    • 电子设备,方法,单体和聚合物
    • WO2003079400A2
    • 2003-09-25
    • PCT/IB2003/001062
    • 2003-03-12
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.HUISMAN, Bart-HendrikDE LEEUW, Dagobert, M.LUB, Johan
    • HUISMAN, Bart-HendrikDE LEEUW, Dagobert, M.LUB, Johan
    • H01L
    • C08G61/02H01L51/0003H01L51/0036H01L51/0545H01L51/5012
    • The electronic device of the invention comprises one or more active elements, each comprising a first and a second electrode and an active layer of organic material separating the first and second electrodes. Examples of active elements are thin-film transistors and light-emitting diodes. The active layer comprises a polymeric material having conjugated units A and non-conjugated intermediate units B, which intermediate units B separate the conjugated units A from each other, such that no conjugation extends from a first conjugated unit A1 to a second conjugated unit A2. The polymeric material may be a polymer network, an alternating copolymer or a polymer in which the conjugated units are present in side chains. The polymer can be prepared from monomers having a B1-A1-B2 structure, wherein at least one of B1 and B2 comprises a reactive group enabling polymerization.
    • 本发明的电子设备包括一个或多个有源元件,每个有源元件包括第一和第二电极以及分隔第一和第二电极的有机材料的有源层。 有源元件的例子是薄膜晶体管和发光二极管。 活性层包含具有共轭单元A和非共轭中间单元B的聚合物材料,该中间单元B将共轭单元A彼此分开,使得没有共轭从第一共轭单元A1延伸到第二共轭单元A2。 聚合物材料可以是聚合物网络,交替共聚物或其中共轭单元存在于侧链中的聚合物。 该聚合物可以由具有B1-A1-B2结构的单体制备,其中B1和B2中的至少一个包含能够聚合的反应性基团。
    • 7. 发明申请
    • DUAL GATE FIELD-EFFECT TRANSISTOR AND METHOD OF PRODUCING A DUAL GATE FIELD-EFFECT TRANSISTOR
    • 双栅场场效应晶体管及其生产双栅场效应晶体管的方法
    • WO2010049871A2
    • 2010-05-06
    • PCT/IB2009/054717
    • 2009-10-26
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.DE LEEUW, Dagobert, M.VAN HAL, Paulus, A.'T HOOFT, Gert
    • DE LEEUW, Dagobert, M.VAN HAL, Paulus, A.'T HOOFT, Gert
    • H01L51/05
    • H01L51/0554H01L51/0068H01L51/0562
    • The present invention relates to a dual gate field-effect transistor (1) comprising a first and a second dielectric layer (6,7), a first and a second gate electrode (9,11) and an assembly (2) of at least one source electrode (3), at least one drain electrode (4) and at least one organic semiconductor (5), wherein - the source electrode (3) and the drain electrode (4) are in contact with the semiconductor (5), the assembly (2) is located between the first dielectric layer (6) and the second dielectric layer (7), the first dielectric layer (6) is located between the first gate electrode (9) and a first side (8) of the assembly (2), and the second dielectric layer (7) is located between the second gate electrode (11) and a second side (10) of the assembly (2), wherein the organic semiconductor (5) is an organic ambipolar conduction semiconductor (12) which enables at least one electron injection area (18) at the first side (8) and at least one hole injection area (18) at the second side (19) of the assembly (2). The present invention further comprises a corresponding light emission device, a corresponding sensor system and a corresponding memory device comprising at least one field-effect transistor and a method of producing a corresponding dual gate field-effect transistor.
    • 本发明涉及一种双栅极场效应晶体管(1),其包括第一和第二介电层(6,7),第一和第二栅极电极(9,11)和至少一个组件(2) 一个源电极(3),至少一个漏电极(4)和至少一个有机半导体(5),其中源电极(3)和漏电极(4)与半导体(5)接触, 组件(2)位于第一介电层(6)和第二电介质层(7)之间,第一介电层(6)位于第一电极(9)和第一介电层(6)的第一侧 组件(2),第二介质层(7)位于组件(2)的第二栅电极(11)和第二侧(10)之间,其中有机半导体(5)是有机双极导电半导体 (12),其使得能够在第一侧(8)处至少一个电子注入区域(18)和在第二侧(8)处的至少一个空穴注入区域(18) (2)。 本发明还包括相应的发光器件,相应的传感器系统和包括至少一个场效应晶体管的对应的存储器件以及产生相应的双栅极场效应晶体管的方法。