专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009077961A3 COLLAPSED MODE OPERABLE CMUT INCLUDING CONTOURED SUBSTRATE 审中-公开
标题翻译：收缩模式可操作，包括嵌入式基板
公开(公告)号：WO2009077961A3
公开(公告)日：2010-09-02
申请号：PCT/IB2008055279
申请日：2008-12-12
申请人： KONINKL PHILIPS ELECTRONICS NV , PETRUZZELLO JOHN , FRASER JOHN DOUGLAS , ZHOU SHIWEI , DUFORT BENOIT , LETAVIC THEODORE JAMES
发明人： PETRUZZELLO JOHN , FRASER JOHN DOUGLAS , ZHOU SHIWEI , DUFORT BENOIT , LETAVIC THEODORE JAMES
IPC分类号： B06B1/02
CPC分类号： B06B1/0292
摘要： A capacitive ultrasound transducer capable of operation in collapsed mode either with a reduced bias voltage, or with no bias voltage, is provided. The transducer includes a substrate that is contoured so that a middle region of the flexible membrane is collapsed against the substrate in the absence of a bias voltage. A non-collapsible gap may exists between the substrate and peripheral regions of the flexible membrane. The contour of the substrate may be such as to strain the flexible membrane past the point of collapse, or to mechanically interfere with the flexible membrane. The substrate may include a further membrane disposed beneath the flexible membrane, the further membrane being contoured so that the flexible membrane is collapsed against it. The substrate may a support disposed beneath the further membrane to deflect a corresponding portion of the further membrane upward toward the flexible membrane. The support may be a post. The transducer may be operated in collapse mode with an improved efficiency (k2 eff) as compared to otherwise similar conventional transducers exhibiting comparably uncontoured substrates. A related medical imaging system is provided, which may include an array of such transducers disposed on a common substrate. A method of operating such a transducer is provided that includes operating the transducer in the collapse mode in the absence of a bias voltage.
摘要翻译：提供能够以折叠模式操作或者具有降低的偏置电压或没有偏置电压的电容式超声换能器。换能器包括基底，该基底的轮廓使得柔性膜的中间区域在没有偏置电压的情况下相对于基底折叠。在柔性膜的基底和周边区域之间可能存在不可收缩的间隙。衬底的轮廓可以是使柔性膜经过塌陷点，或机械地干涉柔性膜。衬底可以包括设置在柔性膜下方的另一膜，另外的膜被成形为使得柔性膜相对于其折叠。衬底可以是设置在另外的膜下方的支撑件，以将另外的膜的相应部分向上朝向柔性膜偏转。支持可能是一个帖子。传感器可以在崩溃模式下操作，与具有相当的未构图基底的其它相似的传统换能器相比，效率（k 2 eff）提高。提供了一种相关的医学成像系统，其可以包括设置在公共基底上的这种换能器阵列。提供了一种操作这种换能器的方法，其包括在没有偏置电压的情况下以折叠模式操作换能器。

2. 发明申请

WO2010146532A3 IMAGING SYSTEM FOR IMAGING A VISCOELASTIC MEDIUM 审中-公开
标题翻译：用于成像粘贴介质的成像系统
公开(公告)号：WO2010146532A3
公开(公告)日：2012-01-19
申请号：PCT/IB2010052668
申请日：2010-06-15
申请人： KONINKL PHILIPS ELECTRONICS NV , SHAHZAD KHALID , ANAND AJAY , PETRUZZELLO JOHN , ZHOU SHIWEI , SUIJVER JAN FREDERIK
发明人： SHAHZAD KHALID , ANAND AJAY , PETRUZZELLO JOHN , ZHOU SHIWEI , SUIJVER JAN FREDERIK
IPC分类号： G10K11/30 , A61B8/00
CPC分类号： G10K11/30 , A61B5/0053 , A61B8/12 , A61B8/4281 , A61B8/445 , A61B18/1492 , A61B2090/378 , G01S15/8911
摘要： An imaging system for imaging a viscoelastic medium is disclosed. The imaging system comprises a variable refractive lens (4) and a transducer system (5) for generating acoustic radiation. The imaging system is operated to alternate between first and second operating modes. While the variable refractive lens is operated to alternate between a first configuration and a second configuration, the transducer is operated to alternate between generating acoustic radiation for displacing the viscoelastic medium and acoustic radiation for imaging the displacement of the viscoelastic medium. In embodiments the variable refractive lens is a fluid focus lens. Moreover, in embodiments, the imaging system is integrated with a catheter-based interaction modality, such as a tissue ablation modality.
摘要翻译：公开了一种用于对粘弹性介质进行成像的成像系统。成像系统包括可变折射透镜（4）和用于产生声辐射的换能器系统（5）。操作成像系统以在第一和第二操作模式之间交替。当可变折射透镜被操作以在第一配置和第二配置之间交替时，换能器被操作以在产生用于移动粘弹性介质的声辐射和用于成像粘弹介质的位移成像的声辐射之间交替。在实施例中，可变折射透镜是流体聚焦透镜。此外，在实施例中，成像系统与基于导管的相互作用模式（例如组织消融模态）整合。

3. 发明申请

WO2013001503A3 METHOD AND APPARATUS FOR AUTOMATED ULTRASONIC DOPPLER ANGLE AND FLOW VELOCITY ESTIMATION 审中-公开
标题翻译：自动超声多角度角和流速估计的方法与装置
公开(公告)号：WO2013001503A3
公开(公告)日：2013-03-28
申请号：PCT/IB2012053315
申请日：2012-06-29
申请人： KONINKL PHILIPS ELECTRONICS NV , GUPTA LALIT , ANAND AJAY , PETRUZZELLO JOHN , VAJINEPALLI PALLAVI , SISODIA RAJENDRA SINGH , FIRTION CELINE , RAMACHANDRAN GANESAN
发明人： GUPTA LALIT , ANAND AJAY , PETRUZZELLO JOHN , VAJINEPALLI PALLAVI , SISODIA RAJENDRA SINGH , FIRTION CELINE , RAMACHANDRAN GANESAN
IPC分类号： A61B8/06
CPC分类号： A61B8/06 , A61B8/4494 , A61B8/483 , A61B8/488 , A61B8/5223
摘要： Disclosed is an ultrasound device for measuring blood flow velocity in a blood vessel of a subject without imaging functionality in the device. The measurement depends upon reflections of a collimated beam of ultrasound from a subject's body part. Received electrical signals representative of the reflected ultrasound energy is used for generating a representation of blood flow at a plurality of predetermined locations in the volume and calculating a first blood flow velocity at each of the locations. The representation of flow is used for delineating the blood flow in the blood vessel in the volume. An angle calculating unit calculates the Doppler angle between the direction of the radiated collimated beam in the delineated blood flow at each point. A velocity calculator calculates a second blood flow velocity at the plurality of points based on the calculated first velocities and the calculated angle at the point.
摘要翻译：本发明公开了一种超声波装置，用于测量装置中没有成像功能的被检体的血管中的血流速度。测量取决于来自受试者身体部位的准直的超声波束的反射。代表反射的超声能量的接收的电信号用于产生体积中的多个预定位置处的血流的表示，并计算每个位置处的第一血流速度。流量的表示用于描绘体积中血管中的血流量。角度计算单元计算在每个点处描绘的血流中的辐射准直光束的方向之间的多普勒角度。速度计算器基于计算的第一速度和该点处的计算角度，计算多个点处的第二血流速度。

4. 发明申请

WO2006085267A3 SEMICONDUCTOR DEVICE WITH TRENCH FIELD PLATE 审中-公开
标题翻译：具有TRENCH现场板的半导体器件
公开(公告)号：WO2006085267A3
公开(公告)日：2007-03-15
申请号：PCT/IB2006050398
申请日：2006-02-07
申请人： KONINKL PHILIPS ELECTRONICS NV , LETAVIC THEODORE , PETRUZZELLO JOHN
发明人： LETAVIC THEODORE , PETRUZZELLO JOHN
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/423 , H01L29/739
CPC分类号： H01L29/407 , H01L29/0696 , H01L29/42368 , H01L29/7397 , H01L29/7813
摘要： A vertically oriented self terminatining semiconductor device such as a discrete trench MOS device (10, 38) that includes a cylindrical drift region (18) that extend downward from a surface region to a substrate (11) and a dielectric region (20) that exponentially tapers outward from the cylindrical drift region as the drift region approaches the substrate. A field plate electrode (12) is disposed on the dielectric region. Alternatively, the gate electrode (40, 46) may be disposed on the dialectric region, optionally with an underlying field plate electrode (48) .
摘要翻译：垂直取向的自终止半导体器件，例如分立沟槽MOS器件（10,38），其包括从表面区域向下延伸到衬底（11）的圆柱形漂移区域（18），以及电介质区域（20）随着漂移区域接近基板，圆柱形漂移区域向外逐渐变细。场电极（12）设置在电介质区域上。或者，栅电极（40,46）可以可选地配置在下面的场板电极（48）上。

5. 发明申请

WO2012085788A3 AUTOMATED DOPPLER VELOCIMETRY USING A LOW-COST TRANSDUCER. 审中-公开
标题翻译：使用低成本传感器的自动多普勒速度测量。
公开(公告)号：WO2012085788A3
公开(公告)日：2012-08-23
申请号：PCT/IB2011055729
申请日：2011-12-16
申请人： KONINKL PHILIPS ELECTRONICS NV , ANAND AJAY , PETRUZZELLO JOHN , SISODIA RAJENDRA SINGH , GUPTA LALIT , VAJINEPALLI PALLAVI , FIRTION CELINE
发明人： ANAND AJAY , PETRUZZELLO JOHN , SISODIA RAJENDRA SINGH , GUPTA LALIT , VAJINEPALLI PALLAVI , FIRTION CELINE
IPC分类号： A61B8/06
CPC分类号： A61B8/5223 , A61B5/489 , A61B8/06 , A61B8/0891 , A61B8/4427 , A61B8/4444 , A61B8/466 , A61B8/467 , A61B8/483 , A61B8/488 , A61B8/54 , A61B8/585
摘要： An automatic, stand-alone, hand-held ultrasound blood-vessel examination device (100)requires a reduced number of transducer elements (126) and presents a simplified user interface(136-140), without the need for displaying an image of any of the vessels. The probe, in one embodiment,acquires and examines a volume of interest (106), searches for a target vessel, tests the vessel for normality of blood flow, and reports the diagnosis, all automatically and without need for user intervention. In another embodiment, the probe finds a body vessel (108-112) in a volume, and extracts a clinical Doppler parameter, all automatically and without need for user intervention.
摘要翻译：自动的，独立的手持式超声波血管检查装置（100）需要减少数量的换能器元件（126）并呈现简化的用户界面（136-140），而不需要显示任何的船只。在一个实施例中，探测器获取并检查感兴趣体积（106），搜索目标血管，检测血管的血流正常，并且报告诊断，全部自动且无需用户干预。在另一个实施例中，探头在一个体积中找到身体血管（108-112），并且全部自动提取临床多普勒参数，而不需要用户干预。

6. 发明申请

WO2007069157A3 METHOD AND APPARATUS FOR GUIDANCE AND APPLICATION OF HIGH INTENSITY FOCUSED ULTRASOUND FOR CONTROL OF BLEEDING DUE TO SEVERED LIMBS 审中-公开
标题翻译：用于指导和应用高强度聚焦超声波的方法和装置用于控制由于严重的限制
公开(公告)号：WO2007069157A3
公开(公告)日：2009-04-16
申请号：PCT/IB2006054673
申请日：2006-12-07
申请人： KONINKL PHILIPS ELECTRONICS NV , ROUTH HELEN , FRASER JOHN , PETRUZZELLO JOHN , AYATI SHERVIN
发明人： ROUTH HELEN , FRASER JOHN , PETRUZZELLO JOHN , AYATI SHERVIN
IPC分类号： A61B8/00 , A61B8/14
CPC分类号： A61B8/4227 , A61B8/06 , A61B8/4281 , A61B8/4483 , A61N7/02 , A61N2007/0065 , A61N2007/0078 , A61N2007/0095 , A61N2007/027
摘要： An ultrasonic diagnostic and therapy system is described for stopping the bleeding of severely damaged blood vessels or vessels severed in a limb amputation. A cuff is attached to the stump of the severed limb which contains a diagnostic transducer array and a HIFU transducer. The diagnostic transducer surveys the tissue of the severed limb, searching for a Doppler flow signal. When a Doppler flow signal is detected, the flow velocity and range and coordinates of the sample volume are determined. This information is supplied to a HIFU therapy transducer controller, which controls the HIFU transducer to transmit focused ultrasound to the sample volume of the flow locus. The focused ultrasound heats and coagulates blood in the severed vessel to stem the bleeding. Heat dissipation is reduced by tracking and continuously heating the same bolus of blood as it flows, or by heating a significant length of the blood vessel.
摘要翻译：描述了超声诊断和治疗系统，用于阻止严重损伤的血管或肢体截肢切断的血管的出血。一个袖带连接到包含诊断换能器阵列和HIFU换能器的切断肢体的残端。诊断传感器检测切断的肢体的组织，寻找多普勒血流信号。当检测到多普勒流量信号时，确定样品体积的流速和范围和坐标。该信息被提供给HIFU治疗传感器控制器，其控制HIFU换能器将聚焦超声波传输到流动轨迹的样本体积。聚焦超声加热并凝结切断的血管中的血液以阻止出血。通过跟踪并连续加热相同的血液，当流动时，或通过加热大量血管来减少散热。

7. 发明申请

WO03003464A2 HV-SOI LDMOS DEVICE WITH INTEGRATED DIODE TO IMPROVE RELIABILITY AND AVALANCHE RUGGEDNESS 审中-公开
标题翻译：具有集成二极管的HV-SOI LDMOS器件，以提高可靠性和AVALANCHE RUGGEDNESS
公开(公告)号：WO03003464A2
公开(公告)日：2003-01-09
申请号：PCT/IB0202414
申请日：2002-06-20
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： PETRUZZELLO JOHN , LETAVIC THEODORE J , SIMPSON MARK R
IPC分类号： H01L27/04 , H01L21/762 , H01L21/822 , H01L21/8234 , H01L27/06 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/40 , H01L29/78 , H01L29/786 , H01L29/861
CPC分类号： H01L29/402 , H01L21/76264 , H01L21/76281 , H01L27/1203 , H01L29/7824
摘要： A hybrid semiconductor device is presented in which one or more diode regions are integrated into a transistor region. In a preferred embodiment the transistor region is a continuous (self-terminating) SOI LDMOS device in which are integrated one or more diode portions. Within the diode portions, since there is only one PN junction, the mechanism for breakdown failure due to bipolar turn-on is nonexistent. The diode regions are formed such that they have a lower breakdown voltage than the transistor region, and thus any transient voltage (or current) induced breakdown is necessarily contained in the diode regions. In a preferred embodiment, the breakdown voltage of the diode portions is lowered by narrowing their field plate length relative to the transistor portion of the device. This allows the device to survive any such breakdown without being destroyed, resulting in a more rugged and more reliable device.
摘要翻译：提出了一种混合半导体器件，其中一个或多个二极管区域集成到晶体管区域中。在优选实施例中，晶体管区域是其中集成有一个或多个二极管部分的连续（自终端）SOI LDMOS器件。在二极管部分内，由于只有一个PN结，不存在由于双极导通引起的击穿故障的机制。二极管区域被形成为使得它们具有比晶体管区域更低的击穿电压，因此在二极管区域中必然包含任何瞬态电压（或电流）感应击穿。在优选实施例中，二极管部分的击穿电压通过使其场板长度相对于器件的晶体管部分变窄而降低。这允许设备在任何这样的故障之下生存而不被破坏，从而导致更加坚固和更可靠的设备。

8. 发明申请

WO0145142A3 LATERAL INSULATED-GATE BIPOLAR TRANSISTOR (LIGBT) DEVICE IN SILICON-ON-INSULATOR (SOI) TECHNOLOGY 审中-公开
标题翻译：硅绝缘体（SOI）技术中的横向绝缘栅双极型晶体管（LIGBT）器件
公开(公告)号：WO0145142A3
公开(公告)日：2001-12-06
申请号：PCT/EP0011929
申请日：2000-11-29
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： PETRUZZELLO JOHN , LETAVIC THEODORE , VAN ZWOL JOHANNES
IPC分类号： H01L29/786 , H01L29/06 , H01L29/423 , H01L29/739
CPC分类号： H01L29/7394 , H01L29/0696 , H01L29/42368
摘要： A lateral thin-film Silicon-On-Insulator (SOI) device (20) includes a semiconductor substrate (22), a buried insulating layer (24) on the substrate and a Lateral Insulated Gate Bipolar Transistor (LIGBT) device in an SOI layer on the buried insulating layer (24) and having a source region (28) of a first conductivity type formed in a body region (30) of a second conductivity type opposite to that of the first and a body contact region (40) of the second conductivity type in the body region (30) and connected to the source region (28). A lateral drift region (32a) of a first conductivity type is provided adjacent the body region (30) and forms a lightly-doped drain region, and a drain contact region (34) of the first conductivity type is provided laterally spaced apart from the body region by the drift region with an anode region (42) of the second conductivity type in the drain region and connected to the drain contact region (34). A gate electrode (36) is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region (32a) adjacent the body region (30), with the gate electrode (36) being at least substantially insulated from the body region and drift region by a surface insulation region (38). Improved device performance is achieved by making a dimension of the source region in a direction normal to a direction of current flow between the source region (28) and the drain contact region (34) greater than a corresponding dimension of the drain contact region and of the anode region (42).
摘要翻译：横向薄膜绝缘体上硅（SOI）器件（20）包括半导体衬底（22），衬底上的掩埋绝缘层（24）和SOI层中的横向绝缘栅双极晶体管（LIGBT）器件在所述掩埋绝缘层（24）上并且具有形成在与所述第一导电类型的所述第一导电类型的所述第一导电类型的本体区域（30）相反的第二导电类型的源区域（28）和所述第一导电类型的本体接触区域（40）在所述体区域（30）中并连接到所述源极区域（28）的第二导电类型。第一导电类型的横向漂移区域（32a）与本体区域（30）相邻设置并形成轻掺杂漏极区域，并且第一导电类型的漏极接触区域（34）与第一导电类型的漏极接触区域通过所述漂移区与所述漏极区中的所述第二导电类型的阳极区（42）连接并且与所述漏极接触区（34）连接。栅电极（36）设置在体区的一部分上，其中在工作期间形成沟道区并且在与体区（30）相邻的横向漂移区（32a）的一部分上延伸，栅电极（ 36）通过表面绝缘区域（38）至少基本上与本体区域和漂移区域绝缘。通过使在与源极区域（28）和漏极接触区域（34）之间的电流流动方向垂直的方向上的源极区域的尺寸大于漏极接触区域的对应尺寸和阳极区域（42）。

9. 发明申请

WO02069408A3 SOI LDMOS TRANSISTOR HAVING A FIELD PLATE AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：具有现场板的SOI LDMOS晶体管及其制造方法
公开(公告)号：WO02069408A3
公开(公告)日：2002-12-05
申请号：PCT/IB0200411
申请日：2002-02-08
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： PETRUZZELLO JOHN , LETAVIC THEODORE J , SIMPSON MARK R
IPC分类号： H01L29/786 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/739 , H01L29/78 , H01L29/41
CPC分类号： H01L29/402 , H01L29/0847 , H01L29/41758 , H01L29/42368 , H01L29/7394 , H01L29/7824
摘要： A method and structure for a Silicon-on-Insulator transistor device such as Loi-LDMOS or Soi-LIGBT with a lateral drift region (32) and a conducting top field plate (44, 44a) is presented. The method consists of decreasing the gate to drain capacitance (301, 401) by means of decreasing the portion of the filed plate (44, 44a) that is connected to the gate electrode (36, 36a), and hence the effective overlap of the gate (36, 36a) with the drift region (32) and drain (34). This results in decreased energy dissipation in switching the transistor, and more efficient operation. The rate of decrease of the gate to drain capacitance (301, 401) is even faster at higher drain voltages, inuring in significant energy efficiencies in high voltage applications.
摘要翻译：提出了具有横向漂移区域（32）和导电顶部场板（44,44a）的诸如Loi-LDMOS或Soi-LIGBT的绝缘体上硅晶体管器件的方法和结构。该方法包括通过减少连接到栅电极（36,36a）的压板（44,44a）的部分来减小栅极与漏极电容（301,401），从而降低栅电极栅极（36,36a）与漂移区域（32）和漏极（34）连接。这导致在切换晶体管时能量消耗降低，并且操作更有效。在较高的漏极电压下，栅极到漏极电容（301,401）的降低速率甚至更快，从而在高电压应用中显着提高了能量效率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式