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1. 发明申请

WO2016133765A1 OPTICAL METROLOGY WITH REDUCED FOCUS ERROR SENSITIVITY 审中-公开
标题翻译：具有减少聚焦误差灵敏度的光学计量学
公开(公告)号：WO2016133765A1
公开(公告)日：2016-08-25
申请号：PCT/US2016/017399
申请日：2016-02-10
申请人： KLA-TENCOR CORPORATION
发明人： KRISHNAN, Shankar , ZHUANG, Guorong Vera , WANG, David Y. , LIU, Xuefeng
IPC分类号： H01L21/66
CPC分类号： G01N21/255 , G01J3/0205 , G01J3/0208 , G01J3/18 , G01J3/2803 , G01J3/42 , G01J2003/425 , G01N21/211 , G01N21/55 , G01N21/9501 , G01N2021/213 , G01N2201/06113 , G01N2201/068
摘要： Methods and systems for performing broadband spectroscopic metrology with reduced sensitivity to focus errors are presented herein. Significant reductions in sensitivity to focus position error are achieved by imaging the measurement spot onto the detector such that the direction aligned with the plane of incidence on the wafer surface is oriented perpendicular to the direction of wavelength dispersion on the detector surface. This reduction in focus error sensitivity enables reduced focus accuracy and repeatability requirements, faster focus times, and reduced sensitivity to wavelength errors without compromising measurement accuracy. In a further aspect, the dimension of illumination field projected on the wafer plane in the direction perpendicular to the plane of incidence is adjusted to optimize the resulting measurement accuracy and speed based on the nature of target under measurement.
摘要翻译：本文介绍了对聚焦误差灵敏度降低的宽带光谱测量方法和系统。通过将测量点成像到检测器上来实现对聚焦位置误差的敏感性的显着降低，使得与晶片表面上的入射平面对准的方向定向为垂直于检测器表面上的波长色散的方向。聚焦误差灵敏度的降低可以降低焦点精度和重复性要求，更快的聚焦时间，降低对波长误差的灵敏度，而不会影响测量精度。在另一方面，调整在垂直于入射平面的方向上投射在晶片平面上的照明场的尺寸，以根据测量目标的性质优化所得到的测量精度和速度。

2. 发明申请

WO2019199340A1 AN OVERLAY METROLOGY SYSTEM AND METHOD 审中-公开
公开(公告)号：WO2019199340A1
公开(公告)日：2019-10-17
申请号：PCT/US2018/033061
申请日：2018-05-17
申请人： KLA-TENCOR CORPORATION
发明人： CHUANG, Yung-Ho Alex , LIU, Xuefeng , JIANG, Peilin , FIELDEN, John , XIAOLI, Yinying
IPC分类号： H01L21/66 , G01N21/95
摘要： A system for measuring an overlay error of a sample is disclosed. The system may include a broadband illumination source configured to emit broadband illumination. The system may also include one or more optical elements configured to direct the broadband illumination to a target disposed on the sample, wherein the one or more optical elements are configured to collect illumination from the target and direct it to a spectrometer, wherein the spectrometer is configured to disperse multiple wavelengths of the illumination collected from the sample to multiple elements of a sensor to generate a plurality of signals. The system may also include a controller configured to calculate an overlay error between a first structure and a second structure of the target by comparing the plurality of signals with a plurality of calculated signals.

3. 发明申请

WO2018071710A3 MULTI-COLUMN ELECTRON BEAM LITHOGRAPHY INCLUDING FIELD EMITTERS ON A SILICON SUBSTRATE WITH BORON LAYER 审中-公开
公开(公告)号：WO2018071710A3
公开(公告)日：2018-04-19
申请号：PCT/US2017/056400
申请日：2017-10-12
申请人： KLA-TENCOR CORPORATION
发明人： CHUANG, Yung-Ho Alex , FIELDEN, John , LIU, Xuefeng , XIAOLI, Yinying
IPC分类号： H01J37/317 , H01J37/073 , H01J1/304
摘要： A multi-column electron beam device includes an electron source comprising multiple field emitters fabricated on a surface of a silicon substrate. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitters. The field emitters can take various shapes including a pyramid, a cone, or a rounded whisker. Optional gate layers may be placed on the output surface near the field emitters. The field emitter may be p-type or n-type doped. Circuits may be incorporated into the wafer to control the emission current. A light source may be configured to illuminate the electron source and control the emission current. The multi-column electron beam device may be a multi-column electron beam lithography system configured to write a pattern on a sample.

4. 发明申请

WO2018071710A2 MULTI-COLUMN ELECTRON BEAM LITHOGRAPHY INCLUDING FIELD EMITTERS ON A SILICON SUBSTRATE WITH BORON LAYER 审中-公开
标题翻译：多列电子束光刻，包括带有硼层的硅衬底上的场发射器
公开(公告)号：WO2018071710A2
公开(公告)日：2018-04-19
申请号：PCT/US2017/056400
申请日：2017-10-12
申请人： KLA-TENCOR CORPORATION
发明人： CHUANG, Yung-Ho Alex , FIELDEN, John , LIU, Xuefeng , XIAOLI, Yinying
IPC分类号： H01J37/317 , H01J37/073 , H01J1/304
摘要： A multi-column electron beam device includes an electron source comprising multiple field emitters fabricated on a surface of a silicon substrate. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitters. The field emitters can take various shapes including a pyramid, a cone, or a rounded whisker. Optional gate layers may be placed on the output surface near the field emitters. The field emitter may be p-type or n-type doped. Circuits may be incorporated into the wafer to control the emission current. A light source may be configured to illuminate the electron source and control the emission current. The multi-column electron beam device may be a multi-column electron beam lithography system configured to write a pattern on a sample.
摘要翻译：多列电子束装置包括电子源，该电子源包括在硅基底的表面上制造的多个场致发射体。为了防止硅的氧化，在场致发射体的输出表面上直接设置薄的连续硼层。场发射体可以采取各种形状，包括金字塔，锥体或圆形晶须。可选的栅极层可以放置在场发射器附近的输出表面上。场致发射体可以是p型或n型掺杂的。可以将电路并入晶片中以控制发射电流。光源可以被配置为照亮电子源并控制发射电流。多列电子束装置可以是配置为在样品上写入图案的多列电子束光刻系统。

5. 发明申请

WO2014123907A1 METHOD OF ELECTROMAGNETIC MODELING OF FINITE STRUCTURES AND FINITE ILLUMINATION FOR METROLOGY AND INSPECTION 审中-公开
标题翻译：有限结构的电磁建模方法和有限的照明方法和方法
公开(公告)号：WO2014123907A1
公开(公告)日：2014-08-14
申请号：PCT/US2014/014680
申请日：2014-02-04
申请人： TOKYO ELECTRON LIMITED , KLA-TENCOR CORPORATION
发明人： KUZNETSOV, Alexander , PETERLINZ, Kevin , SHCHEGROV, Andrei , POSLAVSKY, Leonid , LIU, Xuefeng
IPC分类号： G06F17/50
CPC分类号： G01N21/4788 , G01B21/30 , G01N21/84 , G01N21/95607 , G01N2021/95615 , G03F7/70625 , G06F17/40 , G06F19/00
摘要： Electromagnetic modeling of finite structures and finite illumination for metrology and inspection are described herein. In one embodiment, a method for evaluating a diffracting structure involves providing a model of the diffracting structure. The method involves computing background electric or magnetic fields of an environment of the diffracting structure. The method involves computing scattered electric or magnetic fields from the diffracting structure using a scattered field formulation based on the computed background fields. The method further involves computing spectral information for the model of the diffracting structure based on the computed scattered fields, and comparing the computed spectral information for the model with measured spectral information for the diffracting structure. In response to a good model fit, the method involves determining a physical characteristic of the diffracting structure based on the model of the diffracting structure.
摘要翻译：本文描述了用于计量和检验的有限结构和有限照明的电磁建模。在一个实施例中，用于评估衍射结构的方法包括提供衍射结构的模型。该方法涉及计算衍射结构环境的背景电场或磁场。该方法涉及使用基于所计算的背景场的散射场拟合来计算衍射结构中的散射电场或磁场。该方法还包括基于所计算的散射场计算衍射结构模型的光谱信息，并将所计算的模型光谱信息与用于衍射结构的测量光谱信息进行比较。响应于良好的模型拟合，该方法包括基于衍射结构的模型确定衍射结构的物理特性。

6. 发明申请

WO2013043831A2 PROCESS AWARE METROLOGY 审中-公开
标题翻译：过程技巧
公开(公告)号：WO2013043831A2
公开(公告)日：2013-03-28
申请号：PCT/US2012/056272
申请日：2012-09-20
申请人： KLA-TENCOR CORPORATION , LIU, Xuefeng , CHUANG, Yung-Ho Alex , FIELDEN, John , TSAI, Bin-Ming Benjamin , ZHANG, Jingjing
发明人： LIU, Xuefeng , CHUANG, Yung-Ho Alex , FIELDEN, John , TSAI, Bin-Ming Benjamin , ZHANG, Jingjing
IPC分类号： H01L21/66
CPC分类号： G06F17/5018 , G03F7/70625 , G06F17/10 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06F2217/16 , H01L22/12 , H01L22/20
摘要： Systems and methods for process aware metrology are provided.
摘要翻译：提供了流程感知度量的系统和方法。

7. 发明申请

WO2010037106A3 ILLUMINATION SUBSYSTEMS OF A METROLOGY SYSTEM, METROLOGY SYSTEMS, AND METHODS FOR ILLUMINATING A SPECIMEN FOR METROLOGY MEASUREMENTS 审中-公开
公开(公告)号：WO2010037106A3
公开(公告)日：2010-04-01
申请号：PCT/US2009/058819
申请日：2009-09-29
申请人： KLA-TENCOR CORPORATION , CHUANG, Yung-Ho Alex , LEVINSKI, Vladimir , LIU, Xuefeng
发明人： CHUANG, Yung-Ho Alex , LEVINSKI, Vladimir , LIU, Xuefeng
IPC分类号： G01N21/00 , G01N21/47 , G01B11/00
摘要： Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements are provided.

8. 发明申请

WO2017031004A1 ELECTRON SOURCE 审中-公开
标题翻译：电子源
公开(公告)号：WO2017031004A1
公开(公告)日：2017-02-23
申请号：PCT/US2016/046901
申请日：2016-08-12
申请人： KLA-TENCOR CORPORATION
发明人： CHUANG, Yung-Ho Alex , XIAOLI, Yinying , LIU, Xuefeng , FIELDEN, John
IPC分类号： H01J1/304 , H01J9/02
CPC分类号： G03F7/70008 , H01J1/304 , H01J1/34 , H01J35/065 , H01J37/073 , H01J2201/30411 , H01J2201/3048 , H01J2237/0635
摘要： An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.
摘要翻译：在具有相对的第一和第二表面的硅衬底上形成电子源。在硅衬底的第二表面上制备至少一个场致发射体以增强电子的发射。为了防止硅的氧化，使用最小化氧化和缺陷的工艺将薄的连续的硼层直接设置在场致发射体的输出表面上。场发射器可以采取各种形状，例如金字塔和圆形晶须。一个或几个可选的栅极层可以放置在或稍低于场发射极尖端的高度，以便实现对发射电流和高发射电流的快速和准确的控制。场发射极可以是p型掺杂的并且被配置为以反偏压模式操作，或者场发射极可以是n型掺杂的。

9. 发明申请

WO2016187603A1 PHOTOCATHODE INCLUDING FIELD EMITTER ARRAY ON A SILICON SUBSTRATE WITH BORON LAYER 审中-公开
标题翻译：包含BORON层的硅基板上的场致发射体阵列的光刻胶
公开(公告)号：WO2016187603A1
公开(公告)日：2016-11-24
申请号：PCT/US2016/033669
申请日：2016-05-21
申请人： KLA-TENCOR CORPORATION
发明人： CHUANG, Yung-Ho , FIELDEN, John , XIAOLI, Yinying , LIU, Xuefeng
IPC分类号： H01J31/50 , H01J29/38 , H01J31/26 , H01J1/34 , G02B21/12 , H01L27/146 , H01L27/148
CPC分类号： H01J1/308 , H01J1/3044 , H01J1/34 , H01J2201/3423 , H01L27/14831 , H01L31/105 , H01L31/107
摘要： A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems.
摘要翻译：光电阴极利用整体形成在硅衬底上的场致发射阵列（FEA）来增强光电子发射，以及直接设置在FEA的输出表面上以防止氧化的薄硼层。场发射体由具有以二维周期性图案设置的各种形状（例如，金字塔形或圆形晶须）的突起形成，并且可以被配置为以反向偏压模式操作。提供可选的栅极层以控制发射电流。在照明（顶部）表面上形成可选的第二硼层，并且在第二硼层上形成任选的抗反射材料层。在相对的照明和输出表面之间产生可选的外部电位。通过特殊的掺杂方案和施加外部电位形成n型硅场致发射体和p-i-n光电二极管膜的可选组合。光电阴极形成传感器和检测系统的一部分。

10. 发明申请

WO2013106465A1 METHOD AND SYSTEM FOR DETERMINING ONE OR MORE OPTICAL CHARACTERISTICS OF STRUCTURE OF A SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于确定半导体晶体结构的一个或多个光学特性的方法和系统
公开(公告)号：WO2013106465A1
公开(公告)日：2013-07-18
申请号：PCT/US2013/020877
申请日：2013-01-09
申请人： KLA-TENCOR CORPORATION
发明人： LIU, Xuefeng , CHUANG, Yung-Ho , FIELDEN, John
IPC分类号： H01L21/66
CPC分类号： G01N21/9501 , G01N21/47 , G01N21/4788 , G01N21/95607 , G01N2021/213 , G01N2021/95615 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.
摘要翻译：半导体晶片的结构的一个或多个光学特性的确定包括测量来自样品的一个或多个结构的一个或多个光学信号，基于所述样品的一个或多个结构确定与具有所选择的一组标称特征的参考结构相关联的背景光学场一个或多个结构，确定适合于至少部分校正背景场的校正光场，其中所测量的一个或多个光信号与与校正光场和背景光场之和相关联的信号之间的差异在以下选择的公差等级，以及利用所述校正光场提取与所述一个或多个结构相关联的一个或多个特性。

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