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1. 发明申请

WO2004038916A2 MICRO-ELECTROMECHANICAL VARACTOR WITH ENHANCED TUNING RANGE 审中-公开
标题翻译：具有增强调谐范围的微机电变换器
公开(公告)号：WO2004038916A2
公开(公告)日：2004-05-06
申请号：PCT/EP2003/012399
申请日：2003-09-18
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , COMPAGNIE IBM FRANCE
发明人： CHINTHAKINDI, Anil, K. , GROVES, Robert, A. , STEIN, Kenneth, J. , SUBBANNA, Seshadri , VOLANT, Richard, P.
IPC分类号： H03J3/18
CPC分类号： H01G5/18 , B81B2201/01 , H01G5/011 , Y10S257/924
摘要： A three-dimensional micro-electromechanical (MEM) varactor is described wherein a movable beam (50) and fixed electrodes (51) are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the "chip side" while the fixed bottom electrode is fabricated on a separated substrate "carrier side". Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and "flipped over", aligned and joined to the "carrier" substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.
摘要翻译：描述了三维微机电（MEM）变容二极管，其中可移动梁（50）和固定电极（51）分别制造在彼此耦合的分离基板上。具有梳状驱动电极的可移动梁被制造在“芯片侧” 而固定底部电极制造在分离的基底“载体侧”上。在衬底的两个表面上制造器件时，芯片侧器件被切割并“翻转”，对准并连接到“载体”上。衬底以形成最终器件。梳齿驱动（鳍）电极用于致动，而电极的运动提供电容的变化。由于所涉及的恒定驱动力，可以获得大的电容调谐范围。该装置的三维外观具有较大的表面积。当提供大纵横比特征时，可以使用较低的致动电压。在制造时，MEMS器件被完全封装，不需要额外封装器件。此外，由于可以在晶片级（晶片级MEMS封装）上进行对准和键合，因此可以以较低成本获得改进的器件产量。

2. 发明申请

WO2003054938A1 METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES 审中-公开
标题翻译：在CMOS兼容基板上制作微电子开关的方法
公开(公告)号：WO2003054938A1
公开(公告)日：2003-07-03
申请号：PCT/US2002/036088
申请日：2002-11-07
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： VOLANT, Richard, P. , BISSON, John, C. , COTE, Donna, R. , DALTON, Timothy, J. , GROVES, Robert, A. , PETRARCA, Kevin, S. , STEIN, Kenneth, J. , SUBBANNA, Seshadri
IPC分类号： H01L21/20
CPC分类号： B81C1/00246 , B81B2201/016 , B81B2201/018 , B81B2203/0127 , B81B2207/07 , B81C1/00611 , B81C2201/0122 , B81C2203/0735 , H01G5/40 , H01H59/0009
摘要： A method of fabricating micro-electromechanical switches (MEMS) using a process starting with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric (150). All, or portions, of the interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, for example, Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam (160) and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the moveable beam (160) that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material.
摘要翻译：一种使用由铜镶嵌互连层开始的工艺来制造微机电开关（MEMS）的方法，由介于电介质（150）中的金属导体制成。当开关处于闭合状态时，互连件的全部或部分凹陷到足以提供电容气隙的程度，以及为例如Ta / TaN的保护层提供空间。在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束（160）并且提供用于切换信号穿过的一个或多个路径。气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。下一层是沉积到形成开关装置的可移动梁（160）之间形成的间隙的所需厚度的另一介电层。通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。然后用牺牲脱模材料填充空腔。

3. 发明申请

WO2002073702A1 INTEGRATED TOROIDAL COIL INDUCTORS FOR IC DEVICES 审中-公开
标题翻译：集成器件的集成式电感线圈电感器
公开(公告)号：WO2002073702A1
公开(公告)日：2002-09-19
申请号：PCT/US2002/007992
申请日：2002-03-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： ACOSTA, Raul, E. , CARASSO, Melanie, L. , CORDES, Steven, A. , GROVES, Robert, A. , LUND, Jennifer, L. , ROSNER, Joanna
IPC分类号： H01L29/82
CPC分类号： H01L28/10 , H01F17/0006 , H01F17/0033 , H01F41/041 , H01L27/08
摘要： A means for fabrication of solenoidal inductors interated in a semiconductor chip is provided. A solenoidal coil (50) is partially embedded in a deep well etched into the chip substrate (10). The non-embedded part (30) of the coil is fabricated as part of BEOL metallization layers (52). This allows for large cross-sectional area of the solenoid turns, tus reducing the turn-to-turn capacitive coupling. Because the solenoidal coils of this invention have a large diameter cross-section, the coil can be made with a large inductance value and yet occupy a small area of the chip. The farbication process includes etching of a deep cavity in the substrate after all the FEOL steps are completed; lining said cavity with a dielectric (14) followed by fabrication of the part of the coil (22) that will be embedded by deposition of a conductive material metal through a mask; deposition of dielectric (24 and 28) and planarization of the same by CMP. After planarization the fabrication of the remaining part (30) of the solenoidal coil is fabricated as part of the metallization in the BEOL (i.e. as line/vias of the BEOL). To further increase the cross section of the solenoidal coil, part of it may be built by electrodeposition through a mask on top of the BEOL layers.
摘要翻译：提供了一种用于制造交错在半导体芯片中的螺线管电感器的装置。螺线管线圈（50）被部分地嵌入到蚀刻到芯片衬底（10）中的深阱中。线圈的非嵌入部分（30）被制造为BEOL金属化层（52）的一部分。这允许螺线管转弯的大截面积，减少匝间电容耦合。由于本发明的螺线管线圈具有大直径的横截面，所以线圈可以制造成具有大的电感值，并且占据芯片的小面积。改进方法包括在所有FEOL步骤完成之后蚀刻衬底中的深空腔; 用电介质（14）衬里所述空腔，随后制造将通过掩模沉积导电材料金属而嵌入的线圈（22）的部分; 介电（24和28）的沉积和CMP的平坦化。在平坦化之后，螺线管线圈的剩余部分（30）的制造被制造为BEOL中的金属化的一部分（即，作为BEOL的线/通路）。为了进一步增加螺线管线圈的横截面，其一部分可以通过电沉积穿过BEOL层顶部的掩模来构建。

4. 发明申请

WO2007084879A2 LOW RESISTANCE AND INDUCTANCE BACKSIDE THROUGH VIAS AND METHODS OF FABRICATING SAME 审中-公开
标题翻译：通过VIAS的低电阻和电感及其制造方法
公开(公告)号：WO2007084879A2
公开(公告)日：2007-07-26
申请号：PCT/US2007/060544
申请日：2007-01-15
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , ERTURK, Mete , GROVES, Robert, A. , JOHNSON, Jeffrey, B. , JOSEPH, Alvin, J. , LIU, Qizhi , SPROGIS, Edmund, J. , STAMPER, Anthony, K.
发明人： ERTURK, Mete , GROVES, Robert, A. , JOHNSON, Jeffrey, B. , JOSEPH, Alvin, J. , LIU, Qizhi , SPROGIS, Edmund, J. , STAMPER, Anthony, K.
IPC分类号： H01L21/50
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation (250) in a substrate (100), the substrate (100) having a frontside and an opposing backside; forming a first dielectric layer (105) on the frontside of the substrate (100); forming a trench (265C) in the first dielectric layer (105), the trench (265C) aligned over and within a perimeter of the dielectric isolation (250) and extending to the dielectric isolation (250); extending the trench (265C) formed in the first dielectric layer (1 05) through the dielectric isolation (250) and into the substrate (1 00)to a depth (Dl ) less than a thickness of the substrate (1 00); filling the trench (265C) and co-planarizing a top surface of the trench (265C) with a top surface of the first dielectric layer (1 05) to form an electrically conductive through via (270C); and thinning the substrate (100) from a backside of the substrate (100) to expose the through via (270C).
摘要翻译：背面接触结构及其制造方法。该方法包括：在衬底（100）中形成绝缘隔离（250），所述衬底（100）具有前侧和相对的背面; 在所述基板（100）的前侧形成第一电介质层（105）; 在所述第一电介质层（105）中形成沟槽（265C），所述沟槽（265C）在所述介电隔离（250）的周边内并且在所述介质隔离（250）的周边内对准并且延伸到所述电介质隔离（250）; 将形成在第一电介质层（105）中的沟槽（265C）延伸通过电介质隔离（250）并延伸到衬底（100）中至达到小于衬底厚度（001）的深度（D1）。填充沟槽（265C）并且将沟槽（265C）的顶表面与第一介电层（105）的顶表面共平化以形成导电通孔（270C）; 以及从所述衬底（100）的背面使所述衬底（100）变薄以暴露所述通孔（270C）。

5. 发明申请

WO2005112105A1 METHOD FOR FORMING SUSPENDED TRANSMISSION LINE STRUCTURES IN BACK END OF LINE PROCESSING 审中-公开
标题翻译：在线处理后端形成悬挂传输线结构的方法
公开(公告)号：WO2005112105A1
公开(公告)日：2005-11-24
申请号：PCT/US2005/014645
申请日：2005-04-28
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CHINTHAKINDI, Anil, K. , GROVES, Robert, A. , TRETIAKOV, Youri, V. , VAED, Kunal , VOLANT, Richard, P.
发明人： CHINTHAKINDI, Anil, K. , GROVES, Robert, A. , TRETIAKOV, Youri, V. , VAED, Kunal , VOLANT, Richard, P.
IPC分类号： H01L21/4763
CPC分类号： H01P11/003 , H01L21/7682 , H01L21/76838 , H01L23/5222 , H01L23/5225 , H01L23/53238 , H01L2223/6622 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/3011 , H01L2924/00
摘要： A method for forming a transmission line structure (300) for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel dielectric layer and forming a sacrificial material within one or more voids (308) created by the removal of the portion of the interlevel dielectric layer. A signal transmission line (302) is formed in a second metallization level formed over the interlevel dielectric layer, the signal transmission line (302) being disposed over the sacrificial material. A portion of dielectric material included within the second metallization level is removed so as to expose the sacrificial material, wherein a portion of the sacrificial material is exposed through a plurality of access holes (310) formed through the signal transmission line (302). The sacrificial material is removed so as to create an air gap beneath the signal transmission line (302).
摘要翻译：一种用于形成用于半导体器件的传输线结构（300）的方法包括在第一金属化层上形成层间电介质层，去除层间电介质层的一部分并在一个或多个空隙（308）内形成牺牲材料去除层间介电层的一部分。信号传输线（302）形成在层间电介质层上形成的第二金属化层，信号传输线（302）设置在牺牲材料上。包括在第二金属化水平内的电介质材料的一部分被去除以暴露牺牲材料，其中牺牲材料的一部分通过穿过信号传输线（302）形成的多个访问孔（310）暴露。去除牺牲材料，以在信号传输线（302）下方产生气隙。

6. 发明申请

WO2004078638A2 MICRO-ELECTROMECHANICAL INDUCTIVE SWITCH 审中-公开
标题翻译：微机电感应开关
公开(公告)号：WO2004078638A2
公开(公告)日：2004-09-16
申请号：PCT/US2003/034630
申请日：2003-10-28
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： VOLANT, Richard, P. , FLORKEY, John E. , GROVES, Robert, A.
IPC分类号： B81B
CPC分类号： H03K17/965 , H01F7/066 , H01F7/14 , H01F2007/068 , H01H59/0009
摘要： A micro-electromechanical (MEM) switch capable of inductively coupling and decoupling electrical singnals is described. The inductive MEM switch consists of a first plurality of coils on a moveable platform and a second plurality of coils on a stationary platform or substrate, the coils on the moveable platform being above or below those in the stationary substrate. Coupling and decoupling occurs by rotating or by laterally displacing the coils of the moveable platform with respect to the coils on the stationary substrate. Diverse arrangements or coils respectively on the moveable and stationary substrates allow for a multi-pole and multi-position switching configurations. The MEM switches described eliminate problems of stiction, arcing and welding of the switch contacts. The MEMS switches of the invention can be fabricated using standard CMOS techniques.
摘要翻译：描述了能够感应耦合和去耦电子信号的微机电（MEM）开关。电感式MEM开关由可移动平台上的第一组多个线圈和固定平台或基板上的第二组线圈组成，可移动平台上的线圈高于或低于固定基板中的线圈。通过旋转或相对于固定基板上的线圈横向移动可移动平台的线圈而发生耦合和去耦。分别在可移动和固定基板上的不同布置或线圈允许多极和多位置切换配置。所描述的MEM开关消除了开关触点的静电，电弧和焊接的问题。本发明的MEMS开关可以使用标准CMOS技术制造。

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