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1. 发明申请

WO2003054938A1 METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES 审中-公开
标题翻译：在CMOS兼容基板上制作微电子开关的方法
公开(公告)号：WO2003054938A1
公开(公告)日：2003-07-03
申请号：PCT/US2002/036088
申请日：2002-11-07
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： VOLANT, Richard, P. , BISSON, John, C. , COTE, Donna, R. , DALTON, Timothy, J. , GROVES, Robert, A. , PETRARCA, Kevin, S. , STEIN, Kenneth, J. , SUBBANNA, Seshadri
IPC分类号： H01L21/20
CPC分类号： B81C1/00246 , B81B2201/016 , B81B2201/018 , B81B2203/0127 , B81B2207/07 , B81C1/00611 , B81C2201/0122 , B81C2203/0735 , H01G5/40 , H01H59/0009
摘要： A method of fabricating micro-electromechanical switches (MEMS) using a process starting with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric (150). All, or portions, of the interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, for example, Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam (160) and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the moveable beam (160) that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material.
摘要翻译：一种使用由铜镶嵌互连层开始的工艺来制造微机电开关（MEMS）的方法，由介于电介质（150）中的金属导体制成。当开关处于闭合状态时，互连件的全部或部分凹陷到足以提供电容气隙的程度，以及为例如Ta / TaN的保护层提供空间。在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束（160）并且提供用于切换信号穿过的一个或多个路径。气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。下一层是沉积到形成开关装置的可移动梁（160）之间形成的间隙的所需厚度的另一介电层。通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。然后用牺牲脱模材料填充空腔。

2. 发明申请

WO2004038916A2 MICRO-ELECTROMECHANICAL VARACTOR WITH ENHANCED TUNING RANGE 审中-公开
标题翻译：具有增强调谐范围的微机电变换器
公开(公告)号：WO2004038916A2
公开(公告)日：2004-05-06
申请号：PCT/EP2003/012399
申请日：2003-09-18
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , COMPAGNIE IBM FRANCE
发明人： CHINTHAKINDI, Anil, K. , GROVES, Robert, A. , STEIN, Kenneth, J. , SUBBANNA, Seshadri , VOLANT, Richard, P.
IPC分类号： H03J3/18
CPC分类号： H01G5/18 , B81B2201/01 , H01G5/011 , Y10S257/924
摘要： A three-dimensional micro-electromechanical (MEM) varactor is described wherein a movable beam (50) and fixed electrodes (51) are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the "chip side" while the fixed bottom electrode is fabricated on a separated substrate "carrier side". Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and "flipped over", aligned and joined to the "carrier" substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.
摘要翻译：描述了三维微机电（MEM）变容二极管，其中可移动梁（50）和固定电极（51）分别制造在彼此耦合的分离基板上。具有梳状驱动电极的可移动梁被制造在“芯片侧” 而固定底部电极制造在分离的基底“载体侧”上。在衬底的两个表面上制造器件时，芯片侧器件被切割并“翻转”，对准并连接到“载体”上。衬底以形成最终器件。梳齿驱动（鳍）电极用于致动，而电极的运动提供电容的变化。由于所涉及的恒定驱动力，可以获得大的电容调谐范围。该装置的三维外观具有较大的表面积。当提供大纵横比特征时，可以使用较低的致动电压。在制造时，MEMS器件被完全封装，不需要额外封装器件。此外，由于可以在晶片级（晶片级MEMS封装）上进行对准和键合，因此可以以较低成本获得改进的器件产量。

3. 发明申请

WO2003001584A1 A NON-SELF-ALIGNED SIGE HETEROJUNCTION BIPOLAR TRANSISTOR 审中-公开
标题翻译：非自对准信号异相双极晶体管
公开(公告)号：WO2003001584A1
公开(公告)日：2003-01-03
申请号：PCT/US2002/019789
申请日：2002-06-19
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , JAGANNATHAN, Basanth , JENG, Shwu-Jen , JOHNSON, Jeffrey, B. , JOHNSON, Robb, A. , LANZEROTTI, Louis, D. , STEIN, Kenneth, J. , SUBBANNA, Seshadri
发明人： JAGANNATHAN, Basanth , JENG, Shwu-Jen , JOHNSON, Jeffrey, B. , JOHNSON, Robb, A. , LANZEROTTI, Louis, D. , STEIN, Kenneth, J. , SUBBANNA, Seshadri
IPC分类号： H01L21/331
CPC分类号： H01L29/66242 , H01L21/8249 , H01L29/7378
摘要： A method for making a non-self-aligned, heterojunction bipolar transistor includes forming extrinsic base regions (70) with a PFET source/drain implant aligned with the polysilicon in an emitter stack but which are not directly aligned with an emitter opening defined in that stack. This is achieved by making the emitter pedestal (66) wider than the emitter opening. This advantageously removes the dependency of alignment between the extrinsic base regions and the emitter opening, thereby resulting in fewer process steps, reduced thermal cycles, and improved speed.
摘要翻译：一种用于制造非自对准的异质结双极晶体管的方法包括：在发射极堆叠中形成具有与多晶硅对准的PFET源极/漏极注入的非本征基极区域（70），但并不直接对准在该区域中限定的发射极开口叠加。这通过使发射器基座（66）比发射器开口更宽来实现。这有利地消除了非本征基区和发射极开口之间的对准的依赖性，从而导致更少的工艺步骤，减少的热循环和改进的速度。

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