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    • 2. 发明申请
    • ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND ILLUMINATION SYSTEM AND PROJECTION EXPOSURE APPARATUS COMPRISING AN ILLUMINATION OPTICS OF THIS TYPE
    • 用于EUV微结构和照明系统的照明光学和包含这种类型的照明光学的投影曝光装置
    • WO2009132756A1
    • 2009-11-05
    • PCT/EP2009/002584
    • 2009-04-08
    • CARL ZEISS SMT AGFIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • FIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • G03F7/20
    • G03F7/70191G03F7/70083
    • An illumination optics for EUV microlithography serves for guiding an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension (x) and a shorter field dimension (y), the ratio being considerably greater than 1. A field facet mirror (13) has a plurality of field facets (19) for setting defined illumination conditions in the object field. A following optics downstream of the field facet mirror (13) serves for transmitting the illumination light into the object field (5). The following optics comprises a pupil facet mirror (14) with a plurality of pupil facets (27). The field facets (19) are in each case individually allocated to the pupil facets (27) so that portions of the illumination light bundle (10) impinging upon in each case one of the field facets (19) are guided on to the object field (5) via the associated pupil facet (27). The field facet mirror (13) not only comprises a plurality of basic illumination field facets (19 G ) which provide a basic illumination of the object field (5) via associated basic illumination pupil facets (27 G ) but also a plurality of correction illumination field facets (19 K ) which provide for a correction of the illumination of the object field (5) via associated correction illumination pupil facets (27 K ). The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
    • 用于EUV微光刻的照明光学器件用于将照明光束从辐射源引导到物场,其具有在较长场尺寸(x)和较短场尺寸(y)之间的延伸比,该比率远大于1。 场面反射镜(13)具有多个场面(19),用于在对象场中设定定义的照明条件。 场面反射镜(13)下游的跟随光学器件用于将照明光发射到物场(5)中。 以下光学器件包括具有多个光瞳面(27)的光瞳小面镜(14)。 场分面(19)在每种情况下分别被分配给光瞳面(27),使得照射光束(10)中的每一个场景面(19)中的一个照射的部分被引导到物场 (5)通过相关联的光瞳面(27)。 场面反射镜(13)不仅包括通过相关联的基本照明光瞳(27G)提供对象场(5)的基本照明的多个基本照明场面(19G),而且还包括多个校正照明场面 (19K),其经由相关联的校正照明光瞳面(27K)提供对物场(5)的照明的校正。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化,例如照明强度分布或照明角度分布。
    • 3. 发明申请
    • BELEUCHTUNGSOPTIK MIT EINEM BEWEGLICHEN FILTERELEMENT
    • 与移动过滤元件照明光学
    • WO2012038112A1
    • 2012-03-29
    • PCT/EP2011/061631
    • 2011-07-08
    • CARL ZEISS SMT GMBHLAYH, MichaelFIOLKA, DamianHARTJES, Joachim
    • LAYH, MichaelFIOLKA, DamianHARTJES, Joachim
    • G03F7/20
    • F21V9/10F21V9/40G03F7/70083G03F7/70158G03F7/70191G03F7/70833G03F7/70891
    • Die Erfindung betrifft eine Beleuchtungsoptik, zur Ausleuchtung eines Objektfeldes mit Strahlung einer ersten Wellenlänge. Dabei umfasst die Beleuchtungsoptik ein Filterelement zur Unterdrückung von Strahlung mit einer zweiten Wellenlänge. Das Filterelement mindestens eine obskurierend wirkende Komponente, so dass sich während des Betriebs der Beleuchtungsoptik aufgrund der obskurierend wirkenden Komponente mindestens einen Bereich (469, 471) reduzierter Intensität von Strahlung mit der ersten Wellenlänge auf einem in Lichtrichtung nach dem Filterelement angeordneten ersten optischen Element (407) der Beleuchtungsoptik ergeben. Hierbei kann das Filterelement eine Mehrzahl von Positionen einnehmen, die zu unterschiedlichen Bereichen (469, 471) reduzierter Intensität fuhren, wobei es zu jedem Punkt auf einer optischen Nutzfläche (441) des ersten optischen Elements (407) mindestens eine Position gibt, so dass der Punkt nicht in einem Bereich (469, 471) reduzierter Intensität liegt.
    • 本发明涉及的照明光学部件用于与第一波长的辐射照明物场。 照明光学系统包括:用于在第二波长抑制辐射的过滤元件。 该过滤器元件的至少一个obskurierend作用的组分,以使至少一个减少的辐射(的强度的照明光学部件的操作过程中,由于具有在过滤器元件的第一光学元件的布置在光方向的下游侧的第一波长的obskurierend作用的组分部分(469,471)407 )照明光学产率。 在这里,过滤器元件可以假设的减小的强度引线多个在不同的区域的位置的(469,471),其中,存在于在所述第一光学元件(407)的至少一个位置的光的区域(441)的任何位置,从而使 的区域(469,471)的减小的强度是不指向。
    • 7. 发明申请
    • ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 微波投影曝光装置的照明系统
    • WO2011137917A1
    • 2011-11-10
    • PCT/EP2010/002780
    • 2010-05-06
    • CARL ZEISS SMT GMBHDEGÜNTHER, MarkusFIOLKA, DamianZIEGLER, Gerhard-Wilhelm
    • DEGÜNTHER, MarkusFIOLKA, DamianZIEGLER, Gerhard-Wilhelm
    • G03F7/20G02B26/08
    • G03F7/70191G02B17/0892G03F7/70116G03F7/70941
    • An illumination system of a microlithographic projection exposure apparatus comprises a spatial light modulator (58) which varies an intensity distribution in a pupil surface (38). The modulator (58) comprises an array (62) of mirrors (64) that reflect impinging projection light (34) into directions that depend on control signals applied to the mirrors. A prism (60), which directs the projection light (34) towards the spatial light modulator (58), has a double pass surface (76) on which the projection light (34) impinges twice, namely a first time when leaving the prism (60) and before it is reflected by the mirrors (64), and a second time when entering the prism (60) and after it has been reflected by the mirrors (64). Pupil perturbation suppressing means are provided that reduce reflections of projection light (34) when it impinges the first time on the double pass surface (76), and/or prevent that light portions (78) being a result of such reflections contribute to the intensity distribution in the pupil surface (38).
    • 微光刻投影曝光装置的照明系统包括改变瞳孔表面(38)中的强度分布的空间光调制器(58)。 调制器(58)包括将入射投影光(34)反射到取决于施加到反射镜的控制信号的方向上的反射镜(64)的阵列(62)。 将投射光(34)引向空间光调制器(58)的棱镜(60)具有双重表面(76),投影光(34)撞击两次,即离开棱镜时第一次 (60)反射之前并且在被反射镜(64)反射之前,以及第二次当进入棱镜(60)并且被反射镜(64)反射之后。 提供了瞳孔扰动抑制装置,当第一次冲击双重表面(76)时减少投影光(34)的反射,和/或防止由于这种反射而导致的光部分(78)有助于强度 分布在瞳孔表面(38)。
    • 9. 发明申请
    • EUV MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS WITH A HEAT LIGHT SOURCE
    • EUV微电子投影曝光装置与光源
    • WO2012038239A1
    • 2012-03-29
    • PCT/EP2011/065175
    • 2011-09-02
    • CARL ZEISS SMT GMBHFIOLKA, Damian
    • FIOLKA, Damian
    • G03F7/20
    • G03F7/702G03F7/2004G03F7/70158G03F7/70891
    • The invention relates to an EUV microlithography projection exposure apparatus having an exposure light source for producing radiation in a first spectral range from 5 nm - 15 nm a heat light source for producing radiation in a second spectral range from 1 -50 μm. The apparatus furthermore comprises an optical system having a first group of mirrors for guiding radiation from the first spectral range along a light path such that each mirror in the first group can have a first associated intensity distribution applied to it in the first spectral range during operation of the exposure light source. In this case, the heat light source is arranged such that at least one mirror in the first group can have a second associated intensity distribution in the second spectral range applied to it during operation of the heat light source, wherein the first intensity distribution differs from the second intensity distribution essentially by a position-independent factor.
    • 本发明涉及一种具有曝光光源的EUV微光刻投影曝光装置,该曝光光源用于在5nm-15nm的第一光谱范围内产生用于在1〜50μm的第二光谱范围内产生辐射的热光源。 该装置还包括具有第一组反射镜的光学系统,用于沿着光路引导来自第一光谱范围的辐射,使得第一组中的每个反射镜可以在操作期间在第一光谱范围内施加到其上的第一相关强度分布 的曝光光源。 在这种情况下,热光源被布置成使得第一组中的至少一个反射镜可以在加热光源的操作期间在施加到其的第二光谱范围内具有第二相关联的强度分布,其中第一强度分布不同于 第二强度分布基本上是通过位置无关因子。
    • 10. 发明申请
    • EUV LIGHT SOURCE FOR AN ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 微波投影曝光装置照明系统的EUV光源
    • WO2011069881A1
    • 2011-06-16
    • PCT/EP2010/068699
    • 2010-12-02
    • CARL ZEISS SMT GMBHFIOLKA, Damian
    • FIOLKA, Damian
    • G03F7/20H05G2/00
    • G03F7/70575G03F7/70033H05G2/003H05G2/005H05G2/008
    • The invention concerns an EUV light source for an illumination system of a microlithographic projection exposure apparatus. According to an aspect of the invention, an EUV light source has a radiation source unit (105), at least one target source (135) for feeding target material (132) into the beam path of the radiation source unit (105) in such a way that said target material can be excited at at least one plasma ignition position (130) by the radiation (106) produced by the radiation source unit (105) into a plasma state with the emission of EUV radiation (138), a primary mirror which forms a collector mirror (110) and which at least partially reflects EUV radiation (138) emitted by the target material (132) in such a way that the reflected EUV radiation passes into the illumination system, and a secondary mirror (120) which reflects a beam produced by the radiation source unit (105) and focuses it on to the plasma ignition position (130), wherein the beam reflected at the secondary mirror (120) after reflection at the secondary mirror (120) has a numerical aperture greater than the numerical aperture of said beam prior to reflection at the secondary mirror (120) and wherein radiation (137) reflected at the target material (132) in the plasma ignition position after focusing by the secondary mirror (120) is at least predominantly not incident on the collector mirror (110).
    • 本发明涉及一种用于微光刻投影曝光装置的照明系统的EUV光源。 根据本发明的一个方面,EUV光源具有辐射源单元(105),至少一个目标光源(135),用于将目标材料(132)馈送到辐射源单元(105)的光束路径中 一种方法,其中所述目标材料可以通过所述辐射源单元(105)产生的辐射(106)在至少一个等离子体点火位置(130)处被激发成具有EUV辐射(138)的发射的等离子体状态,主要 反射镜,其形成收集器反射镜(110)并且以使得反射的EUV辐射进入照明系统的方式至少部分地反射由目标材料(132)发射的EUV辐射(138),以及次级反射镜(120) 其反射由辐射源单元(105)产生的光束并将其聚焦到等离子体点火位置(130),其中在次级反射镜(120)反射之后在次级反射镜(120)反射的光束具有数值孔径 大于数值孔径 所述光束在次级反射镜(120)之前的反射之前,并且其中在由次级反射镜(120)聚焦后在等离子体点火位置处在目标材料(132)处反射的辐射(137)至少主要不会入射在收集器反射镜 (110)。