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1. 发明申请

WO2008053907A1 LED ARRAY MANUFACTURING METHOD, LED ARRAY AND LED PRINTER 审中-公开
标题翻译： LED阵列制造方法，LED阵列和LED打印机
公开(公告)号：WO2008053907A1
公开(公告)日：2008-05-08
申请号：PCT/JP2007/071171
申请日：2007-10-24
申请人： CANON KABUSHIKI KAISHA , YAMAGATA, Kenji , SEKIGUCHI, Yoshinobu , YONEHARA, Takao , NISHI, Kojiro
发明人： YAMAGATA, Kenji , SEKIGUCHI, Yoshinobu , YONEHARA, Takao , NISHI, Kojiro
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , B41J2/45 , H01L33/0079 , H01L33/10 , H01L2924/0002 , H01L2924/00
摘要： An LED array having no insulating film between the LED structure and the reflector thereof is manufactured by forming a luminescent layer 1102 and a DBR layer 1103 on a first substrate 100 with an insulating layer 1101 interposed between them, patterning the DBR layer and the luminescent layer to make them show an islands-like profile, bonding the DBR layer and a second substrate 110 with an insulating layer 1111 interposed between them, and separating the first substrate and the luminescent layer from each other.
摘要翻译：在LED结构及其反射体之间不具有绝缘膜的LED阵列通过在第一基板100上形成发光层1102和DBR层1103，其间插入有绝缘层1101来形成DBR层和发光层为了使其呈现岛状轮廓，将DBR层和第二基板110与介于它们之间的绝缘层1111接合，并且将第一基板和发光层彼此分离。

2. 发明申请

WO2008050901A1 SEMICONDUCTOR MEMBER, SEMICONDUCTOR ARTICLE MANUFACTURING METHOD, AND LED ARRAY USING THE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件，半导体器件制造方法和使用制造方法的LED阵列
公开(公告)号：WO2008050901A1
公开(公告)日：2008-05-02
申请号：PCT/JP2007/071267
申请日：2007-10-25
申请人： CANON KABUSHIKI KAISHA , YONEHARA, Takao , YAMAGATA, Kenji , SEKIGUCHI, Yoshinobu , NISHI, Kojiro
发明人： YONEHARA, Takao , YAMAGATA, Kenji , SEKIGUCHI, Yoshinobu , NISHI, Kojiro
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , B41J2/45 , H01L21/7806 , H01L21/784 , H01L33/0079 , H01L33/0095 , H01L2924/0002 , H01L2924/00
摘要： A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.
摘要翻译：提供了一种新颖的半导体制品制造方法等。制造具有形成在半导体衬底上的化合物半导体多层膜的半导体产品的方法包括：制备包括蚀刻牺牲层（1010），化合物半导体多层膜（1020），绝缘膜（2010）和半导体衬底（2000），并且具有通过半导体衬底和绝缘膜的第一沟槽（2005）以及设置在该化合物半导体衬底（1000）中的第二沟槽的半导体衬底沟槽（1025）半导体多层膜，以便连接到第一沟槽，并使蚀刻剂通过第一沟槽和第二沟槽与蚀刻牺牲层接触，然后蚀刻蚀刻牺牲层，以将化合物半导体衬底与构件分离。

3. 发明申请

WO2006001285A1 SEMICONDUCTOR FILM MANUFACTURING METHOD AND SUBSTRATE MANUFACTURING METHOD 审中-公开
标题翻译：半导体薄膜制造方法和基板制造方法
公开(公告)号：WO2006001285A1
公开(公告)日：2006-01-05
申请号：PCT/JP2005/011388
申请日：2005-06-15
申请人： CANON KABUSHIKI KAISHA , SEKIGUCHI, Yoshinobu , YONEHARA, Takao , KOTO, Makoto , OKUDA, Masahiro , SHIMADA, Tetsuya
发明人： SEKIGUCHI, Yoshinobu , YONEHARA, Takao , KOTO, Makoto , OKUDA, Masahiro , SHIMADA, Tetsuya
IPC分类号： H01L21/02
CPC分类号： H01L21/76251 , H01L21/0237 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02538 , H01L21/02546 , H01L21/02573 , H01L21/0262 , H01L33/0079 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming a semiconductor film (3) on the separation layer (2), and a separation step of separating, by using the separation layer (2), the semiconductor film (3) from a composite member (1a) formed in the semiconductor film forming step.
摘要翻译：本发明提供一种使用新的分离技术及其应用的半导体膜制造方法。本发明的半导体膜制造方法包括在种子基板（1）上异质生长分离层（2）的分离层形成步骤，在分离层（1）上形成半导体膜（3）的半导体膜形成步骤（2），以及通过使用分离层（2）从形成在半导体膜形成步骤中的复合部件（1a）分离半导体膜（3）的分离步骤。

4. 发明申请

WO2004107447A1 SOLID-STATE IMAGE SENSING APPARATUS AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：固态图像感测装置及其制造方法
公开(公告)号：WO2004107447A1
公开(公告)日：2004-12-09
申请号：PCT/JP2004/006593
申请日：2004-05-11
申请人： CANON KABUSHIKI KAISHA , SEKIGUCHI, Yoshinobu , YONEHARA, Takao
发明人： SEKIGUCHI, Yoshinobu , YONEHARA, Takao
IPC分类号： H01L27/14
CPC分类号： H01L21/00 , H01L27/10 , H01L27/14632 , H01L27/14634 , H01L27/1464 , H01L27/14687
摘要： A solid-state image sensing apparatus having a three-dimensional structure whose manufacturing process can be simplified is provided. A solid-state image sensing apparatus formed by bonding a first member (104) and a second member (108) is provided. The first member (104) has a first surface on the side of the bonding interface between the first member (104) and the second member (108) and a second surface on the opposite side of the bonding interface. The second member (108) has a third surface on the bonding interface side and a fourth surface on the opposite side of the bonding interface. The first member (104) includes photoelectric conversion elements (105) which are formed on the first surface before the first member (104) is bonded to the second member (108). The second member (108) includes circuit elements (106) which are formed on the third surface before bonding.
摘要翻译：提供一种具有可以简化其制造过程的三维结构的固态图像感测装置。提供了通过结合第一构件（104）和第二构件（108）而形成的固体摄像装置。第一构件（104）具有在第一构件（104）和第二构件（108）之间的接合界面侧的第一表面和在接合界面的相对侧上的第二表面。第二构件（108）在接合界面侧具有第三表面和在接合界面的相对侧上的第四表面。第一构件（104）包括在第一构件（104）接合到第二构件（108）之前形成在第一表面上的光电转换元件（105）。第二构件（108）包括在接合之前形成在第三表面上的电路元件（106）。

5. 发明申请

WO2004099473A1 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, LIGHT EMITTING DIODE AND PRODUCING METHOD THEREFOR 审中-公开
标题翻译：半导体基板，半导体器件，发光二极管及其制造方法
公开(公告)号：WO2004099473A1
公开(公告)日：2004-11-18
申请号：PCT/JP2004/006346
申请日：2004-04-30
申请人： CANON KABUSHIKI KAISHA , YONEHARA, Takao , SEKIGUCHI, Yoshinobu
发明人： YONEHARA, Takao , SEKIGUCHI, Yoshinobu
IPC分类号： C30B29/42
CPC分类号： H01L21/76259 , C30B25/02 , C30B25/22 , C30B29/42 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02546 , H01L21/0262 , H01L21/02658 , H01L33/0079
摘要： A semiconductor substrate including a gallium arsenide layer is obtained by executing a step of preparing a first substrate having a separating layer constituted of germanium and a gallium arsenide layer on the separating layer, a step of preparing a bonded substrate by bonding the first substrate and a second substrate, and a step of dividing the bonded substrate at a portion of the separating layer.
摘要翻译：通过执行在分离层上制备具有由锗和砷化镓层构成的分离层的第一基板的步骤获得包括砷化镓层的半导体基板，通过将第一基板和第一基板接合来制备接合基板的步骤第二基板，以及在所述分离层的一部分分割所述键合基板的工序。

6. 发明申请

WO2006004135A1 EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：曝光装置和装置制造方法
公开(公告)号：WO2006004135A1
公开(公告)日：2006-01-12
申请号：PCT/JP2005/012433
申请日：2005-06-29
申请人： CANON KABUSHIKI KAISHA , SUGITA, Mitsuro , YONEHARA, Takao , TERASHI, Takaaki , TSUJI, Toshihiko
发明人： SUGITA, Mitsuro , YONEHARA, Takao , TERASHI, Takaaki , TSUJI, Toshihiko
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70116 , G03F7/7005
摘要： This invention relates to an exposure apparatus which transfers a pattern of a mask onto a wafer. The exposure apparatus includes a master stage which holds the mask, and a light source which generates light to illuminate the mask. The light source includes a solid state device which emits light by spontaneous emission.
摘要翻译：本发明涉及将掩模图案转印到晶片上的曝光装置。曝光装置包括保持掩模的主台和产生用于照亮掩模的光的光源。光源包括通过自发发射发光的固态器件。

7. 发明申请

WO2005045492A2 METHOD FOR FABRICATION OF OPTICAL ELEMENT, AND OPTICAL ELEMENT HAVING THREE-DIMENSIONAL LAMINATED STRUCTURE 审中-公开
标题翻译：光学元件的制造方法和具有三维层压结构的光学元件
公开(公告)号：WO2005045492A2
公开(公告)日：2005-05-19
申请号：PCT/JP2004/016901
申请日：2004-11-08
申请人： CANON KABUSHIKI KAISHA , SUGITA, Mitsuro , YONEHARA, Takao
发明人： SUGITA, Mitsuro , YONEHARA, Takao
IPC分类号： G02B6/12
CPC分类号： B82Y20/00 , G02B6/12 , G02B6/12002 , G02B6/1225 , G02B6/13 , G02B6/136 , G02B6/14
摘要： A method for production of an optical element includes a preparation step of preparing a first member having formed on the surface of a first substrate 101 a first layer 103 having at least one of natures of epitaxial growth and pores-making (micropores-making) and a second member having a porous layer for layer separation formed on a second substrate 104 and having formed thereon a second layer having at least one of natures of epitaxial growth and pores-making (micropores-making), a formation step of bonding the first layer 103 of the first member and the second layer of the second member together, then performing layer separation in the porous layer for layer separation in the second member, and separating the second substrate 104 and the second layer of the second member from each other to form a laminated structure on the first substrate 101, and a pattern forming step of forming a refraction index distribution pattern produced by a difference in refraction index in the plane of at least one of the first layer 103 and the second layer.
摘要翻译：光学元件的制造方法包括：准备第一部件的准备工序，所述第一部件在第一基板101的表面上形成有具有外延生长性质和制孔（微孔）的至少一种的第一层103和具有用于层间分离的多孔层的第二构件形成在第二衬底104上并且在其上形成具有外延生长和制孔（微孔制造）的性质中的至少一种的第二层，形成步骤，将第一层 103的第一部件和第二部件的第二层在一起，然后在用于第二部件中的层分离的多孔层中进行层分离，并且将第二基板104和第二部件的第二层彼此分离以形成第一基板101上的层叠结构，以及形成折射率分布图案的图案形成步骤，该折射率分布图案由第一层103和第二层中的至少一个。

8. 发明申请

WO2010116694A2 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2010116694A2
公开(公告)日：2010-10-14
申请号：PCT/JP2010/002426
申请日：2010-04-02
申请人： CANON KABUSHIKI KAISHA , SAKAGUCHI, Kiyofumi , YONEHARA, Takao , KAWASE, Nobuo , NAKAGAWA, Kenji
发明人： SAKAGUCHI, Kiyofumi , YONEHARA, Takao , KAWASE, Nobuo , NAKAGAWA, Kenji
IPC分类号： H01L21/98
CPC分类号： H01L25/0657 , H01L21/563 , H01L21/6835 , H01L21/78 , H01L24/12 , H01L24/16 , H01L24/90 , H01L24/94 , H01L24/97 , H01L25/50 , H01L2221/68318 , H01L2221/68363 , H01L2221/68377 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2224/32145 , H01L2224/73203 , H01L2224/90 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/3025 , H01L2224/81 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.
摘要翻译：一种制造半导体器件的方法包括在第一半导体衬底的表面侧形成多个第一集成电路的步骤; 在形成在设置在第二半导体衬底上的剥离层上的半导体层中形成多个第二集成电路; 键合两个半导体基板，使得电接合部分彼此结合以形成接合结构; 在所述剥离层处将所述第二半导体衬底与所述接合结构分离，以将形成有所述多个第二集成电路的半导体层转移到所述第一半导体衬底; 以及切割第一半导体衬底以获得每个包括第一集成电路和第二集成电路的堆叠芯片。

9. 发明申请

WO2010116698A2 METHOD OF MANUFACTURING SEMICONDUCTOR CHIP 审中-公开
标题翻译：制造半导体芯片的方法
公开(公告)号：WO2010116698A2
公开(公告)日：2010-10-14
申请号：PCT/JP2010/002446
申请日：2010-04-02
申请人： CANON KABUSHIKI KAISHA , YONEHARA, Takao , SAKAGUCHI, Kiyofumi , KAWASE, Nobuo , NAKAGAWA, Kenji
发明人： YONEHARA, Takao , SAKAGUCHI, Kiyofumi , KAWASE, Nobuo , NAKAGAWA, Kenji
CPC分类号： H01L25/0657 , H01L21/6835 , H01L24/94 , H01L2221/68318 , H01L2221/6835 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2225/06548 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/3025 , H01L2924/00
摘要： A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove having a depth that does not reach the release layer; filling the hole or the groove with an electrical conductor; bonding a second substrate to the semiconductor layer to form a bonded structure; separating the bonded structure at the release layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the reverse surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor.
摘要翻译：制造包括集成电路和穿透半导体层的贯通电极的半导体芯片的方法包括以下步骤：制备包括在剥离层上形成的剥离层和半导体层的第一基板; 在半导体层中形成集成电路; 在所述半导体层中形成具有未到达所述剥离层的深度的孔或槽; 用电导体填充孔或槽; 将第二衬底接合到所述半导体层以形成接合结构; 在剥离层分离粘合结构，制备半导体层转移到其上的第二基板; 以及去除通过分离而暴露的半导体层的背面侧的至少一部分，以露出电导体的底部。

10. 发明申请

WO2006030957A1 DEVICE AND METHOD FOR ACQUIRING INFORMATION ON OBJECTIVE SUBSTANCE TO BE DETECTED BY DETECTING A CHANGE OF WAVELENGHT CHARACTERISTICS ON THE OPTICAL TRANSMITTANCE 审中-公开
标题翻译：通过检测光学特性波长特性变化来检测目标物质信息的装置和方法
公开(公告)号：WO2006030957A1
公开(公告)日：2006-03-23
申请号：PCT/JP2005/017326
申请日：2005-09-14
申请人： CANON KABUSHIKI KAISHA , UTSUNOMIYA, Norihiko , SUGITA, Mitsuro , NISHIUMA, Satoru , YONEHARA, Takao
发明人： UTSUNOMIYA, Norihiko , SUGITA, Mitsuro , NISHIUMA, Satoru , YONEHARA, Takao
IPC分类号： G01N21/55
CPC分类号： G01N21/554 , G01N21/648 , G01N2021/258 , G01N2201/0635 , G01N2201/0636
摘要： An information-acquiring device for acquiring information on an objective substance to be detected, which is provided with a sensing element (104) that has a surface capable of fixing the objective substance to be detected thereon, and makes applied light change its wavelength characteristics in response to the fixed state of the objective substance to be detected onto the surface, a light source (102), and light-receiving means (103) for receiving light (111, 112) emitted from the light source (102) through the sensing element (104), has the light-receiving means (103) and the light source (102) arranged on the same substrate (101) so that the light which has been emitted from the light source (102) and has been transmitted through the sensing element (104) can be led to the light-receiving means (103), and has means (107) for varying the wavelength regions of each light incident on each of a plurality of the light-receiving means (103) installed in an optical path from the light source (102) to the light-receiving means (103).
摘要翻译：一种用于获取关于待检测目标物质的信息的信息获取装置，该信息获取装置设置有具有能够固定待检测目标物质的表面的感测元件（104），并使施加的光改变其波长特性响应待检测到的目标物质的固定状态，光源（102）和光接收装置（103），用于接收从光源（102）发射的光（111,112）通过感测元件（104）具有布置在相同基板（101）上的光接收装置（103）和光源（102），使得已经从光源（102）发射并已经透过感测元件（104）可以被引导到光接收装置（103），并且具有用于改变入射到安装在光接收装置（103）中的多个光接收装置（103）中的每一个的每个光的波长区域的装置（107）光路从轻酸 ce（102）连接到光接收装置（103）。

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