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1. 发明申请

WO2009133967A2 SOLID-STATE IMAGING APPARATUS 审中-公开
标题翻译：固态成像装置
公开(公告)号：WO2009133967A2
公开(公告)日：2009-11-05
申请号：PCT/JP2009/058791
申请日：2009-04-30
申请人： CANON KABUSHIKI KAISHA , YAMASHITA, Yuichiro , KOBAYASHI, Masahiro , WATANABE, Takanori , KOJIMA, Shinsuke , ICHIKAWA, Takeshi , ONUKI, Yusuke
发明人： YAMASHITA, Yuichiro , KOBAYASHI, Masahiro , WATANABE, Takanori , KOJIMA, Shinsuke , ICHIKAWA, Takeshi , ONUKI, Yusuke
IPC分类号： H01L27/146
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/359 , H04N5/37452 , H04N5/37457
摘要： A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.
摘要翻译：一种固态成像装置，包括多个像素，每个像素包括：第一保持部分，用于保持来自光电转换部分的信号载流子; 放大部分，用于基于在光电转换部分中产生的信号载波放大和读取信号; 以及用于将光电转换部分中的载流子放电到OFD区域的载流子放电控制部分，并且在光电转换部分和第一载流子保持部分之间具有载流子路径，其中固态成像装置还包括第二载体保持部分，当从光电转换部分的输出节点观察时，通过第一传送单元并联地与第一载体部分电连接，从而平滑电影成像而不引起不连续帧，同时抑制噪声混合到电荷载体保持部分的产生。

2. 发明申请

WO2011043035A1 SOLID-STATE IMAGE PICKUP DEVICE 审中-公开
标题翻译：固态图像拾取器件
公开(公告)号：WO2011043035A1
公开(公告)日：2011-04-14
申请号：PCT/JP2010/005841
申请日：2010-09-29
申请人： CANON KABUSHIKI KAISHA , KOBAYASHI, Masahiro , YAMASHITA, Yuichiro , ONUKI, Yusuke
发明人： KOBAYASHI, Masahiro , YAMASHITA, Yuichiro , ONUKI, Yusuke
IPC分类号： H01L27/146
CPC分类号： H01L27/14806 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/1463 , H04N5/335 , H04N5/359 , H04N5/37452
摘要： A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, (101) a charge holding portion, (102) a floating diffusion, (114) and a transfer portion (103). The pixel also includes a beneath-holding-portion isolation layer (111) and a pixel isolation layer (117). An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region (105) constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.
摘要翻译：固体摄像装置包括多个像素，每个像素包括光电转换部分，（101）电荷保持部分，（102）浮动扩散部分（114）和转印部分（103）。像素还包括保持下部分隔离层（111）和像素隔离层（117）。与保持部隔离层的光电转换部分侧的端部相比，像素隔离层的光电转换部分侧的端部远离光电转换部分和N型半导体区域 105）构成光电转换部的一部分的下方保持部隔离层的至少一部分。

3. 发明申请

WO2011043067A1 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：固态图像拾取装置及其制造方法
公开(公告)号：WO2011043067A1
公开(公告)日：2011-04-14
申请号：PCT/JP2010/005977
申请日：2010-10-06
申请人： CANON KABUSHIKI KAISHA , ONUKI, Yusuke , YAMASHITA, Yuichiro , KOBAYASHI, Masahiro
发明人： ONUKI, Yusuke , YAMASHITA, Yuichiro , KOBAYASHI, Masahiro
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14689
摘要： A solid-state image pickup device includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A first-conductivity-type third semiconductor region is disposed under the second semiconductor region. The third semiconductor region is disposed at a deeper position than the first semiconductor region.
摘要翻译：固体摄像装置包括：光电转换部，电荷保持部，被配置为包括第一导电型第一半导体区;以及转印部，其被配置为包括转印栅极电极，其控制电荷保持部分和感知节点。电荷保持部分包括控制电极。第二导电型第二半导体区域设置在控制电极和传输栅电极之间的半导体区域的表面上。第一导电类型的第三半导体区域设置在第二半导体区域的下方。第三半导体区域设置在比第一半导体区域更深的位置。

4. 发明申请

WO2011043068A1 SOLID-STATE IMAGE PICKUP DEVICE 审中-公开
标题翻译：固态图像拾取器件
公开(公告)号：WO2011043068A1
公开(公告)日：2011-04-14
申请号：PCT/JP2010/005978
申请日：2010-10-06
申请人： CANON KABUSHIKI KAISHA , ONUKI, Yusuke , YAMASHITA, Yuichiro , KOBAYASHI, Masahiro
发明人： ONUKI, Yusuke , YAMASHITA, Yuichiro , KOBAYASHI, Masahiro
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14609
摘要： A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.
摘要翻译：在P型阱中形成有光电转换部，电荷保持部，转印部以及感测结。电荷保持部被配置为包括作为在与光电转换部不同的部分保持电荷的第一半导体区域的N型半导体区域。具有比P型阱高的浓度的P型半导体区域设置在N型半导体区域的下方。

5. 发明申请

WO2011067916A1 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：固态图像拾取装置及其制造方法
公开(公告)号：WO2011067916A1
公开(公告)日：2011-06-09
申请号：PCT/JP2010/006947
申请日：2010-11-29
申请人： CANON KABUSHIKI KAISHA , WATANABE, Takanori , ITAHASHI, Masatsugu , KOBAYASHI, Masahiro , KOBAYASHI, Hideo , FUDABA, Tetsuya , ICHIKAWA, Takeshi
发明人： WATANABE, Takanori , ITAHASHI, Masatsugu , KOBAYASHI, Masahiro , KOBAYASHI, Hideo , FUDABA, Tetsuya , ICHIKAWA, Takeshi
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14683
摘要： A solid-state image pickup device according to the present invention is a backside-illuminated solid-state image pickup device that includes a plurality of pixels each having a photoelectric conversion portion. A p-type semiconductor region 110 in which holes are collected is disposed on the front side of a PD substrate 101. An n-type semiconductor region 119 is disposed below the p-type semiconductor region 110 on the back side of the PD substrate 101. The n-type semiconductor region 119 contains arsenic as a principal impurity. The photoelectric conversion portion includes the p-type semiconductor region 110 and the n-type semiconductor region 119.
摘要翻译：根据本发明的固态图像拾取装置是一种背面照明的固态图像拾取装置，其包括具有光电转换部分的多个像素。在PD基板101的正面设置有收集有空穴的p型半导体区域110.在PD基板101的背面的p型半导体区域110的下方配置n型半导体区域119 n型半导体区域119含有砷作为主要杂质。光电转换部分包括p型半导体区域110和n型半导体区域119。

6. 发明申请

WO2009136655A1 PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME 审中-公开
标题翻译：光电转换装置和成像系统
公开(公告)号：WO2009136655A1
公开(公告)日：2009-11-12
申请号：PCT/JP2009/058949
申请日：2009-05-07
申请人： CANON KABUSHIKI KAISHA , KOBAYASHI, Masahiro , YAMASHITA, Yuichiro
发明人： KOBAYASHI, Masahiro , YAMASHITA, Yuichiro
IPC分类号： H01L27/146 , H04N5/335
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14623 , H04N5/37452 , H04N5/37457
摘要： In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.
摘要翻译：在其成像区域中包括电荷存储部分的光电转换装置中，用于电荷存储部分的隔离区域包括每个具有PN结的第一隔离部分和分别具有绝缘体的第二隔离部分。第二隔离部分布置在电荷存储部分和多个晶体管的至少一部分之间。

7. 发明申请

WO2009125821A1 SOLID-STATE IMAGING APPARATUS AND DRIVING METHOD THEREOF 审中-公开
标题翻译：固态成像装置及其驱动方法
公开(公告)号：WO2009125821A1
公开(公告)日：2009-10-15
申请号：PCT/JP2009/057303
申请日：2009-04-03
申请人： CANON KABUSHIKI KAISHA , YAMASHITA, Yuichiro , KOBAYASHI, Masahiro
发明人： YAMASHITA, Yuichiro , KOBAYASHI, Masahiro
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14643
摘要： A solid-state imaging apparatus includes the carrier holding portion (205) and the amplifying portion (208) in each pixel, wherein a first voltage supplied to a transfer electrode (204) when the transfer portion for transferring carriers from the carrier holding portion (205) to the amplifying portion (208) is placed in a non-conducting state is opposite in polarity to a voltage supplied to the transfer electrode during the turning on period of the transfer portion, and a second voltage supplied to the control electrode (206) of the carrier holding portion during a holding period in which the carriers are retained in the carrier holding portion is the same in polarity as the first voltage and is larger in absolute value than the first voltage.
摘要翻译：一种固体摄像装置，在每个像素中包括载体保持部分（205）和放大部分（208），其中当用于从载体保持部分传送载体的传送部分（204）提供给转印电极（204）的第一电压 205）被放置在非导通状态，与转印部分的导通周期期间提供给转印电极的电压极性相反，并且提供给控制电极（206）的第二电压）在载流子保持部中保持的保持期间的载流子保持部的极性与第一电压相同，绝对值大于第一电压。

8. 发明申请

WO2012001911A1 SOLID-STATE IMAGING DEVICE, MEMBERS FOR THE SAME, AND IMAGING SYSTEM 审中-公开
标题翻译：固态成像装置，相同的成员和成像系统
公开(公告)号：WO2012001911A1
公开(公告)日：2012-01-05
申请号：PCT/JP2011/003533
申请日：2011-06-21
申请人： CANON KABUSHIKI KAISHA , KOBAYASHI, Masahiro
发明人： KOBAYASHI, Masahiro
IPC分类号： H01L27/146 , H01L27/14 , H04N5/374
CPC分类号： H01L27/14636 , H01L23/481 , H01L27/14609 , H01L27/14632 , H01L27/14634 , H01L27/14638 , H01L27/1464 , H01L27/1469 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a solid-state imaging device including a pad capable of reducing inferior connection with an external terminal. The solid-state imaging device includes a first substrate provided, on its front face, with photoelectric conversion elements, a first wiring structure, a second substrate provided, on its front face, with at least a part of peripheral circuits, and a second wiring structure. The first substrate, the first wiring structure, the second wiring structure, and the second substrate are provided in this order. The first wiring structure includes a wiring layer including wirings made mainly of copper. The second wiring structure includes a wiring layer including wirings made mainly of copper. Wirings made mainly of copper in the wiring layer in the first wiring structure are bonded with wirings made mainly of copper in the wiring layer in the second wiring structure. The solid-state imaging device includes a pad formed of a conductive element made mainly of aluminum.
摘要翻译：本发明提供了一种固态成像装置，其包括能够减少与外部端子的不良连接的焊盘。固态成像装置包括：第一基板，其表面上设置有光电转换元件，第一布线结构，在其正面上设置有至少一部分外围电路的第二基板和第二布线结构体。第一基板，第一布线结构，第二布线结构和第二基板依次设置。第一布线结构包括布线层，包括主要由铜制成的布线。第二布线结构包括布线层，该布线层包括主要由铜制成的布线。在第一布线结构中的布线层中主要由铜制成的布线在第二布线结构中的布线层中以主要由铜制成的布线接合。固态成像装置包括由主要由铝制成的导电元件形成的焊盘。

9. 发明申请

WO2012001935A1 SOLID-STATE IMAGING APPARATUS AND METHOD FOR MANUFACTURING THE SOLID-STATE IMAGING APPARATUS 审中-公开
标题翻译：固态成像装置和制造固态成像装置的方法
公开(公告)号：WO2012001935A1
公开(公告)日：2012-01-05
申请号：PCT/JP2011/003635
申请日：2011-06-24
申请人： CANON KABUSHIKI KAISHA , KOBAYASHI, Masahiro
发明人： KOBAYASHI, Masahiro
IPC分类号： H01L27/146
CPC分类号： H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/1469 , H01L2924/0002 , H01L2924/00
摘要： A solid-state imaging apparatus includes a first substrate that includes a plurality of photoelectric conversion units, a second substrate that includes at least a part of a readout circuit configured to read signals based on electric charges of the plurality of photoelectric conversion units and a peripheral circuit including a control circuit, and a wiring structure that is disposed between the first substrate and the second substrate and includes a pad portion electrically connected to the peripheral circuit via a draw-out wiring and an insulating layer. The wiring structure has, at least at a part thereof, a seal ring disposed in such a way as to surround the photoelectric conversion units and the peripheral circuit.
摘要翻译：一种固体摄像装置，具备包括多个光电转换单元的第一基板，具有基于多个光电转换单元的电荷读取信号的读出电路的至少一部分的第二基板和外部包括控制电路的电路和布置在第一基板和第二基板之间的布线结构，并且包括通过拉出布线和绝缘层与外围电路电连接的焊盘部分。该布线结构至少在其一部分上具有以包围光电转换单元和外围电路的方式设置的密封环。

10. 发明申请

WO2012001916A1 SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM 审中-公开
标题翻译：固态成像装置和成像系统
公开(公告)号：WO2012001916A1
公开(公告)日：2012-01-05
申请号：PCT/JP2011/003570
申请日：2011-06-22
申请人： CANON KABUSHIKI KAISHA , KOBAYASHI, Masahiro , SHIMOTSUSA, Mineo
发明人： KOBAYASHI, Masahiro , SHIMOTSUSA, Mineo
IPC分类号： H01L27/146 , H01L21/822 , H01L27/04 , H01L27/14 , H01L31/10 , H04N5/369
CPC分类号： H01L27/14689 , H01L27/0255 , H01L27/0296 , H01L27/146 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/288
摘要： A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
摘要翻译：固态成像装置包括：包括光电转换元件的第一半导体衬底; 以及第二半导体衬底，包括布置在第二半导体衬底的主面中的外围电路的至少一部分，外围电路基于光电转换元件的电荷，第一半导体衬底的主面和所述第二半导体衬底的主面通过在其间夹着布线结构相互相对; 要连接到外部端子的焊盘; 以及保护电路，电连接到所述焊盘和所述外围电路，其中所述保护电路布置在所述第二半导体衬底的主面中。

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