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1. 发明申请

WO2012001916A1 SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM 审中-公开
标题翻译：固态成像装置和成像系统
公开(公告)号：WO2012001916A1
公开(公告)日：2012-01-05
申请号：PCT/JP2011/003570
申请日：2011-06-22
申请人： CANON KABUSHIKI KAISHA , KOBAYASHI, Masahiro , SHIMOTSUSA, Mineo
发明人： KOBAYASHI, Masahiro , SHIMOTSUSA, Mineo
IPC分类号： H01L27/146 , H01L21/822 , H01L27/04 , H01L27/14 , H01L31/10 , H04N5/369
CPC分类号： H01L27/14689 , H01L27/0255 , H01L27/0296 , H01L27/146 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/288
摘要： A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
摘要翻译：固态成像装置包括：包括光电转换元件的第一半导体衬底; 以及第二半导体衬底，包括布置在第二半导体衬底的主面中的外围电路的至少一部分，外围电路基于光电转换元件的电荷，第一半导体衬底的主面和所述第二半导体衬底的主面通过在其间夹着布线结构相互相对; 要连接到外部端子的焊盘; 以及保护电路，电连接到所述焊盘和所述外围电路，其中所述保护电路布置在所述第二半导体衬底的主面中。

2. 发明申请

WO2012001915A1 SOLID-STATE IMAGING APPARATUS AND MANUFACTURING METHOD OF SOLID-STATE IMAGING APPARATUS 审中-公开
标题翻译：固态成像装置的固态成像装置及其制造方法
公开(公告)号：WO2012001915A1
公开(公告)日：2012-01-05
申请号：PCT/JP2011/003566
申请日：2011-06-22
申请人： CANON KABUSHIKI KAISHA , KOBAYASHI, Masahiro , SHIMOTSUSA, Mineo
发明人： KOBAYASHI, Masahiro , SHIMOTSUSA, Mineo
IPC分类号： H01L27/146 , H01L27/14 , H04N5/374
CPC分类号： H01L27/1469 , H01L21/76898 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L31/0224 , H01L31/18
摘要： The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.
摘要翻译：衬垫的第一面位于第二半导体衬底的前侧面和包括平行于前侧面的假想平面之间，并且衬垫的第二面是与第二面相反侧的面所述第一面位于所述第二半导体衬底的所述第一面和所述前侧面之间，并且所述第二面与所述布线结构连接，使得所述衬垫电连接到布置在所述第二面的正面侧的电路所述第二半导体衬底经由所述布线结构。

3. 发明申请

WO2012001910A1 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：WO2012001910A1
公开(公告)日：2012-01-05
申请号：PCT/JP2011/003530
申请日：2011-06-21
申请人： CANON KABUSHIKI KAISHA , SHIMOTSUSA, Mineo , INUI, Fumihiro
发明人： SHIMOTSUSA, Mineo , INUI, Fumihiro
IPC分类号： H01L27/146
CPC分类号： H04N5/378 , H01L27/14601 , H01L27/14609 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14683
摘要： A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.
摘要翻译：固态成像装置包括第一和第二像素区域。在第一像素区域中，设置有光电转换单元，浮动扩散区域（FD）和转移晶体管。在第二像素区域中，设置放大晶体管和复位晶体管。第一元件隔离部分设置在第一像素区域中，而第二元件隔离部分设置在第二像素区域中。绝缘膜在第一元件隔离部分中的半导体衬底的突出量比第二元件隔离部分的突出量小。

4. 发明申请

WO2012004965A1 SOLID-STATE IMAGE PICKUP DEVICE 审中-公开
标题翻译：固态图像拾取器件
公开(公告)号：WO2012004965A1
公开(公告)日：2012-01-12
申请号：PCT/JP2011/003796
申请日：2011-07-04
申请人： CANON KABUSHIKI KAISHA , SHIMOTSUSA, Mineo
发明人： SHIMOTSUSA, Mineo
IPC分类号： H01L27/146 , H04N5/369
CPC分类号： H01L27/14636 , H01L27/14601 , H01L27/14621 , H01L27/14634 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L27/1469 , H01L31/09
摘要： A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.
摘要翻译：提供能够抑制暗电流和/或漏电流的产生的固态图像拾取装置。固体摄像装置具有在其一次面上设置有光电转换器的第一基板，具有包含导电材料的第一接合部的第一布线结构，在其一次侧设置有外围电路的一部分的第二基板面和具有包含导电材料的第二接合部分的第二布线结构。另外，第一接合部和第二接合部被接合，使得第一基板，第一布线结构，第二布线结构和第二基板以该顺序布置。此外，第一接合部分的导电材料和第二接合部分的导电材料被扩散防止膜包围。

5. 发明申请

WO2010090105A1 PHOTOELECTRIC CONVERSION DEVICE AND CAMERA 审中-公开
标题翻译：光电转换器件和摄像机
公开(公告)号：WO2010090105A1
公开(公告)日：2010-08-12
申请号：PCT/JP2010/050999
申请日：2010-01-20
申请人： CANON KABUSHIKI KAISHA , IKEDA, Hajime , KABAYA, Yoshihisa , WATANABE, Takanori , ICHIKAWA, Takeshi , SHIMOTSUSA, Mineo
发明人： IKEDA, Hajime , KABAYA, Yoshihisa , WATANABE, Takanori , ICHIKAWA, Takeshi , SHIMOTSUSA, Mineo
IPC分类号： H01L27/146
CPC分类号： H01L31/022408 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H04N5/335
摘要： A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
摘要翻译：光电转换装置包括p型区域，在p型区域下形成的n型掩埋层，元件隔离区域和覆盖元件隔离区域的至少下部的沟道阻挡区域，其中， p型区域和掩埋层形成光电二极管，沟道阻挡区域的主要杂质的扩散系数小于掩埋层的主要杂质的扩散系数。

6. 发明申请

WO2012001923A1 SOLID-STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置
公开(公告)号：WO2012001923A1
公开(公告)日：2012-01-05
申请号：PCT/JP2011/003594
申请日：2011-06-23
申请人： CANON KABUSHIKI KAISHA , SHIMOTSUSA, Mineo
发明人： SHIMOTSUSA, Mineo
IPC分类号： H01L27/146 , H04N5/357 , H04N5/374 , H04N5/3745
CPC分类号： H01L27/146 , H01L27/14609 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H04N5/3741
摘要： The present invention provides a solid-state imaging device including a first substrate provided with a plurality of photoelectric conversion units thereon, and a second substrate provided with a reading circuit and parallel processing circuits thereon. The solid-state imaging device includes a DC voltage supply wiring configured to supply a DC voltage to the plurality of parallel processing circuits. The DC voltage supply wiring is formed by electrically connecting first conductive patterns provided on the first substrate with second conductive patterns provided on the second substrate.
摘要翻译：本发明提供了一种固态成像装置，其包括在其上设置有多个光电转换单元的第一基板和在其上设置有读取电路和并行处理电路的第二基板。固态成像装置包括被配置为向多个并行处理电路提供DC电压的DC电压供给布线。通过将设置在第一基板上的第一导电图案与设置在第二基板上的第二导电图案电连接而形成直流电压布线。

7. 发明申请

WO2012001922A1 SOLID-STATE IMAGING APPARATUS 审中-公开
标题翻译：固态成像装置
公开(公告)号：WO2012001922A1
公开(公告)日：2012-01-05
申请号：PCT/JP2011/003591
申请日：2011-06-23
申请人： CANON KABUSHIKI KAISHA , ICHIKAWA, Takeshi , SHIMOTSUSA, Mineo , MOMMA, Genzo
发明人： ICHIKAWA, Takeshi , SHIMOTSUSA, Mineo , MOMMA, Genzo
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14634 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/1469
摘要： The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.
摘要翻译：固态摄像装置技术领域本发明涉及具有多个光电转换单元的第一基板和具有多个读出电路的第二基板的固体摄像装置。第一基板设置有彼此电分离的多个第一导电图案，并且第二基板设置有彼此电分离的多个第二导电图案。第一导电图案各自包括沿第一方向延伸的第一部分图案。第二导电图案各自包括沿与第一方向不同的第二方向延伸的部分图案。第一部分图案具有在第一方向上比第二方向上的长度长的长度。

8. 发明申请

WO2010090148A1 PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM 审中-公开
标题翻译：光电转换装置和成像系统
公开(公告)号：WO2010090148A1
公开(公告)日：2010-08-12
申请号：PCT/JP2010/051308
申请日：2010-01-26
申请人： CANON KABUSHIKI KAISHA , YAMASHITA, Yuichiro , WATANABE, Takanori , SHIMOTSUSA, Mineo , ICHIKAWA, Takeshi
发明人： YAMASHITA, Yuichiro , WATANABE, Takanori , SHIMOTSUSA, Mineo , ICHIKAWA, Takeshi
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14654 , H01L27/14656 , H01L27/14672 , H01L27/14674 , H01L27/14689 , H01L31/062
摘要： A photoelectric conversion apparatus comprises multiple photoelectric conversion portions (51) disposed in a semiconductor substrate (5B) wherein each photoelectric conversion portion (51) includes: a P-type charge accumulating area (107) containing a first impurity; and an N-type well portion (102) that, along with the P-type charge accumulating area, configures a photodiode, and each well portion has: an N-type first semiconductor region (102a) containing arsenic at a first density; an N-type second semiconductor region (102b, 102c) disposed below the first semiconductor region and containing arsenic at a second density that is lower than the first density; and an N-type third semiconductor region (102d) disposed below the second semiconductor region and containing a second impurity at a third density that is higher than the first density.
摘要翻译：光电转换装置包括设置在半导体衬底（5B）中的多个光电转换部分（51），其中每个光电转换部分（51）包括：包含第一杂质的P型电荷累积区域（107）以及与P型电荷蓄积区一起构成光电二极管的N型阱部（102），每个阱部具有：以第一密度含有砷的N型第一半导体区域（102a）设置在所述第一半导体区域的下方并且以比所述第一密度低的第二密度含有砷的N型第二半导体区域（102b，102c）以及设置在所述第二半导体区域下方并且以比所述第一密度高的第三密度容纳第二杂质的N型第三半导体区域（102d）。

9. 发明申请

WO2010090104A1 IMAGE SENSING DEVICE AND CAMERA 审中-公开
标题翻译：图像传感装置和摄像机
公开(公告)号：WO2010090104A1
公开(公告)日：2010-08-12
申请号：PCT/JP2010/050998
申请日：2010-01-20
申请人： CANON KABUSHIKI KAISHA , WATANABE, Takanori , SHIMOTSUSA, Mineo , ICHIKAWA, Takeshi , IKEDA, Hajime , SEKINE, Yasuhiro , OHTANI, Akira , KOJIMA, Takeshi
发明人： WATANABE, Takanori , SHIMOTSUSA, Mineo , ICHIKAWA, Takeshi , IKEDA, Hajime , SEKINE, Yasuhiro , OHTANI, Akira , KOJIMA, Takeshi
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14689 , H01L29/7833
摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.
摘要翻译：图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度的第二元件隔离区域低于n型杂质区域。

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