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1. 发明申请

WO2010090149A1 PHOTOELECTRIC CONVERSION APPARATUS AND MANUFACTURING METHOD FOR A PHOTOELECTRIC CONVERSION APPARATUS 审中-公开
标题翻译：光电转换装置的光电转换装置和制造方法
公开(公告)号：WO2010090149A1
公开(公告)日：2010-08-12
申请号：PCT/JP2010/051309
申请日：2010-01-26
申请人： CANON KABUSHIKI KAISHA , WATANABE, Takanori
发明人： WATANABE, Takanori
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/1464 , H01L27/14689
摘要： A, photoelectric conversion apparatus (100) comprises: multiple photoelectric converting units (PD) disposed in a semiconductor substrate; (SB) and isolation portions (103,104,105,106) disposed in the semiconductor substrate. Each photoelectric converting unit includes: a second semiconductor region (107); a third semiconductor region, (109) disposed below the second semiconductor region (107) and a fourth semiconductor region (102) disposed below the third semiconductor region, and each isolation portion includes: a fifth semiconductor region, (104) disposed at a location that is deeper than the surface of the semiconductor substrate and at least extending laterally to the second semiconductor region, containing a first conductivity type impurity; and a sixth semiconductor region, (105) disposed below the fifth semiconductor region and at least extending laterally to the third semiconductor region, containing the first conductivity type impurity, and the diffusion coefficient of the impurity contained in the fifth semiconductor region is lower than the diffusion coefficient of the impurity contained in the sixth semiconductor region.
摘要翻译： A，光电转换装置（100）包括：设置在半导体衬底中的多个光电转换单元（PD）（SB）和设置在半导体衬底中的隔离部分（103,104,105,106）。每个光电转换单元包括：第二半导体区域（107）; 设置在所述第二半导体区域（107）下方的第三半导体区域（109）和设置在所述第三半导体区域下方的第四半导体区域（102），并且每个隔离部分包括：第五半导体区域（104），设置在位置其比半导体衬底的表面更深，并且至少横向延伸到包含第一导电类型杂质的第二半导体区域; 以及第六半导体区域（105），其设置在所述第五半导体区域的下方，并且至少横向延伸到所述第三半导体区域，所述第三半导体区域包含所述第一导电型杂质，并且所述第五半导体区域中所含的杂质的扩散系数低于包含在第六半导体区域中的杂质的扩散系数。

2. 发明申请

WO2010090064A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD THEREOF, AND CAMERA 审中-公开
标题翻译：光电转换装置的制造方法及相机
公开(公告)号：WO2010090064A1
公开(公告)日：2010-08-12
申请号：PCT/JP2010/050450
申请日：2010-01-08
申请人： CANON KABUSHIKI KAISHA , SAWAYAMA, Tadashi , HIROTA, Katsunori , WATANABE, Takanori , ICHIKAWA, Takeshi
发明人： SAWAYAMA, Tadashi , HIROTA, Katsunori , WATANABE, Takanori , ICHIKAWA, Takeshi
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14641 , H01L27/14643
摘要： A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
摘要翻译：光电转换装置包括n型表面区域，形成在表面区域下方的p型区域和形成在p型区域下面的n型掩埋层，其中，表面区域，p-型区域，并且掩埋层形成掩埋光电二极管，并且表面区域的主要杂质的扩散系数小于掩埋层的主要杂质的扩散系数。

3. 发明申请

WO2009133967A3 SOLID-STATE IMAGING APPARATUS 审中-公开
标题翻译：固态成像装置
公开(公告)号：WO2009133967A3
公开(公告)日：2009-12-30
申请号：PCT/JP2009058791
申请日：2009-04-30
申请人： CANON KK , YAMASHITA YUICHIRO , KOBAYASHI MASAHIRO , WATANABE TAKANORI , KOJIMA SHINSUKE , ICHIKAWA TAKESHI , ONUKI YUSUKE
发明人： YAMASHITA YUICHIRO , KOBAYASHI MASAHIRO , WATANABE TAKANORI , KOJIMA SHINSUKE , ICHIKAWA TAKESHI , ONUKI YUSUKE
IPC分类号： H01L27/146 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/374 , H04N5/3745
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/359 , H04N5/37452 , H04N5/37457
摘要： A solid-state imaging apparatus including a plurality of pixels (100) each including: a first holding portion (103) for holding signal carriers from a photoelectric conversion portion; (101) an amplifying ?ortion(109) for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion (111) for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first holding portion, in which the solid-state imaging apparatus further includes a second holding portion (105) electrically connected with the first holding portion in parallel through a first transfer unit, (104) when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.
摘要翻译：一种固态成像装置，包括多个像素（100），每个像素包括：用于保持来自光电转换部分的信号载流子的第一保持部分（103）（101）用于基于在光电转换部分中产生的信号载波放大和读取信号的放大电路（109）; 以及用于将光电转换部分中的电荷载流子放电到OFD区域的载流子放电控制部分（111），并且在光电转换部分和第一保持部分之间具有载流路径，其中固态成像装置还包括当从光电转换部分的输出节点观察时，通过第一传送单元并行地与第一保持部分电连接的第二保持部分（105），从而平滑电影成像而不引起不连续的帧，同时抑制噪声的产生混入电荷载体保持部分。

4. 发明申请

WO2010090105A1 PHOTOELECTRIC CONVERSION DEVICE AND CAMERA 审中-公开
标题翻译：光电转换器件和摄像机
公开(公告)号：WO2010090105A1
公开(公告)日：2010-08-12
申请号：PCT/JP2010/050999
申请日：2010-01-20
申请人： CANON KABUSHIKI KAISHA , IKEDA, Hajime , KABAYA, Yoshihisa , WATANABE, Takanori , ICHIKAWA, Takeshi , SHIMOTSUSA, Mineo
发明人： IKEDA, Hajime , KABAYA, Yoshihisa , WATANABE, Takanori , ICHIKAWA, Takeshi , SHIMOTSUSA, Mineo
IPC分类号： H01L27/146
CPC分类号： H01L31/022408 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H04N5/335
摘要： A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
摘要翻译：光电转换装置包括p型区域，在p型区域下形成的n型掩埋层，元件隔离区域和覆盖元件隔离区域的至少下部的沟道阻挡区域，其中， p型区域和掩埋层形成光电二极管，沟道阻挡区域的主要杂质的扩散系数小于掩埋层的主要杂质的扩散系数。

5. 发明申请

WO2011067916A1 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：固态图像拾取装置及其制造方法
公开(公告)号：WO2011067916A1
公开(公告)日：2011-06-09
申请号：PCT/JP2010/006947
申请日：2010-11-29
申请人： CANON KABUSHIKI KAISHA , WATANABE, Takanori , ITAHASHI, Masatsugu , KOBAYASHI, Masahiro , KOBAYASHI, Hideo , FUDABA, Tetsuya , ICHIKAWA, Takeshi
发明人： WATANABE, Takanori , ITAHASHI, Masatsugu , KOBAYASHI, Masahiro , KOBAYASHI, Hideo , FUDABA, Tetsuya , ICHIKAWA, Takeshi
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14683
摘要： A solid-state image pickup device according to the present invention is a backside-illuminated solid-state image pickup device that includes a plurality of pixels each having a photoelectric conversion portion. A p-type semiconductor region 110 in which holes are collected is disposed on the front side of a PD substrate 101. An n-type semiconductor region 119 is disposed below the p-type semiconductor region 110 on the back side of the PD substrate 101. The n-type semiconductor region 119 contains arsenic as a principal impurity. The photoelectric conversion portion includes the p-type semiconductor region 110 and the n-type semiconductor region 119.
摘要翻译：根据本发明的固态图像拾取装置是一种背面照明的固态图像拾取装置，其包括具有光电转换部分的多个像素。在PD基板101的正面设置有收集有空穴的p型半导体区域110.在PD基板101的背面的p型半导体区域110的下方配置n型半导体区域119 n型半导体区域119含有砷作为主要杂质。光电转换部分包括p型半导体区域110和n型半导体区域119。

6. 发明申请

WO2010090148A1 PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM 审中-公开
标题翻译：光电转换装置和成像系统
公开(公告)号：WO2010090148A1
公开(公告)日：2010-08-12
申请号：PCT/JP2010/051308
申请日：2010-01-26
申请人： CANON KABUSHIKI KAISHA , YAMASHITA, Yuichiro , WATANABE, Takanori , SHIMOTSUSA, Mineo , ICHIKAWA, Takeshi
发明人： YAMASHITA, Yuichiro , WATANABE, Takanori , SHIMOTSUSA, Mineo , ICHIKAWA, Takeshi
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14654 , H01L27/14656 , H01L27/14672 , H01L27/14674 , H01L27/14689 , H01L31/062
摘要： A photoelectric conversion apparatus comprises multiple photoelectric conversion portions (51) disposed in a semiconductor substrate (5B) wherein each photoelectric conversion portion (51) includes: a P-type charge accumulating area (107) containing a first impurity; and an N-type well portion (102) that, along with the P-type charge accumulating area, configures a photodiode, and each well portion has: an N-type first semiconductor region (102a) containing arsenic at a first density; an N-type second semiconductor region (102b, 102c) disposed below the first semiconductor region and containing arsenic at a second density that is lower than the first density; and an N-type third semiconductor region (102d) disposed below the second semiconductor region and containing a second impurity at a third density that is higher than the first density.
摘要翻译：光电转换装置包括设置在半导体衬底（5B）中的多个光电转换部分（51），其中每个光电转换部分（51）包括：包含第一杂质的P型电荷累积区域（107）以及与P型电荷蓄积区一起构成光电二极管的N型阱部（102），每个阱部具有：以第一密度含有砷的N型第一半导体区域（102a）设置在所述第一半导体区域的下方并且以比所述第一密度低的第二密度含有砷的N型第二半导体区域（102b，102c）以及设置在所述第二半导体区域下方并且以比所述第一密度高的第三密度容纳第二杂质的N型第三半导体区域（102d）。

7. 发明申请

WO2010090104A1 IMAGE SENSING DEVICE AND CAMERA 审中-公开
标题翻译：图像传感装置和摄像机
公开(公告)号：WO2010090104A1
公开(公告)日：2010-08-12
申请号：PCT/JP2010/050998
申请日：2010-01-20
申请人： CANON KABUSHIKI KAISHA , WATANABE, Takanori , SHIMOTSUSA, Mineo , ICHIKAWA, Takeshi , IKEDA, Hajime , SEKINE, Yasuhiro , OHTANI, Akira , KOJIMA, Takeshi
发明人： WATANABE, Takanori , SHIMOTSUSA, Mineo , ICHIKAWA, Takeshi , IKEDA, Hajime , SEKINE, Yasuhiro , OHTANI, Akira , KOJIMA, Takeshi
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/1464 , H01L27/14641 , H01L27/14689 , H01L29/7833
摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.
摘要翻译：图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度的第二元件隔离区域低于n型杂质区域。

8. 发明申请

WO2009133967A2 SOLID-STATE IMAGING APPARATUS 审中-公开
标题翻译：固态成像装置
公开(公告)号：WO2009133967A2
公开(公告)日：2009-11-05
申请号：PCT/JP2009/058791
申请日：2009-04-30
申请人： CANON KABUSHIKI KAISHA , YAMASHITA, Yuichiro , KOBAYASHI, Masahiro , WATANABE, Takanori , KOJIMA, Shinsuke , ICHIKAWA, Takeshi , ONUKI, Yusuke
发明人： YAMASHITA, Yuichiro , KOBAYASHI, Masahiro , WATANABE, Takanori , KOJIMA, Shinsuke , ICHIKAWA, Takeshi , ONUKI, Yusuke
IPC分类号： H01L27/146
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/359 , H04N5/37452 , H04N5/37457
摘要： A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.
摘要翻译：一种固态成像装置，包括多个像素，每个像素包括：第一保持部分，用于保持来自光电转换部分的信号载流子; 放大部分，用于基于在光电转换部分中产生的信号载波放大和读取信号; 以及用于将光电转换部分中的载流子放电到OFD区域的载流子放电控制部分，并且在光电转换部分和第一载流子保持部分之间具有载流子路径，其中固态成像装置还包括第二载体保持部分，当从光电转换部分的输出节点观察时，通过第一传送单元并联地与第一载体部分电连接，从而平滑电影成像而不引起不连续帧，同时抑制噪声混合到电荷载体保持部分的产生。

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