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1. 发明申请

WO2003104343A2 METHOD FOR CHEMICAL MECHANICAL POLISHING (CMP) OF LOW-K DIELECTRIC MATERIALS 审中-公开
标题翻译：低K介电材料的化学机械抛光（CMP）方法
公开(公告)号：WO2003104343A2
公开(公告)日：2003-12-18
申请号：PCT/IB2003/002266
申请日：2003-05-26
申请人： CABOT MICROELECTRONICS CORPORATION
发明人： MOEGGENBORG, Kevin, J. , CHOU, Homer , HAWKINS, Joseph, D. , CHAMBERLAIN, Jeffrey, P.
IPC分类号： C09G1/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/02126 , H01L21/31053 , H01L21/312
摘要： The invention provides a method of polishing a substrate containing a low-k dielectric layer comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier, and (ii) abrading at least a portion of the substrate to polish the substrate.
摘要翻译：本发明提供了一种抛光含有低k电介质层的衬底的方法，包括（i）使衬底与化学机械抛光系统接触，所述化学机械抛光系统包括（a）研磨剂，抛光垫或其组合，（b）两亲性非离子表面活性剂，和（c）液体载体，和（ii）研磨至少一部分基材以抛光基材。

2. 发明申请

WO2003019627A3 CMP PROCESS INVOLVING FREQUENCY ANALYSIS-BASED MONITORING 审中-公开
公开(公告)号：WO2003019627A3
公开(公告)日：2003-03-06
申请号：PCT/US2002/026328
申请日：2002-08-19
申请人： CABOT MICROELECTRONICS CORPORATION
发明人： CARTER, Phillip, W. , CHAMBERLAIN, Jeffrey, P.
IPC分类号： G05B19/416
摘要： The invention provides a method for monitoring a chemical-mechanical polishing process, comprising receiving a real-time data signal from a chemical-mechanical polishing process, wherein the real-time data signal pertains to a frictional force, torque, or motor current, converting the data signal into a power spectrum of signals with different frequencies whose sum equals that of the original data signal, identifying and monitoring the signal components of the power spectrum corresponding to an aspect of the chemical-mechanical polishing process, detecting a change in the amplitude or frequency of the signal component, and altering the chemical-mechanical polishing process in response to the detected change. The invention also provides an apparatus for carrying out the aforementioned method.

3. 发明申请

WO2003050864A2 METHOD FOR COPPER CMP USING POLYMERIC COMPLEXING AGENTS 审中-公开
标题翻译：使用聚合物络合剂的铜CMP方法
公开(公告)号：WO2003050864A2
公开(公告)日：2003-06-19
申请号：PCT/US2002/041453
申请日：2002-12-03
申请人： CABOT MICROELECTRONICS CORPORATION
发明人： SCHROEDER, David, J. , CARTER, Phillip , CHAMBERLAIN, Jeffrey, P. , MILLER, Kyle , CHERIAN, Isaac, K.
IPC分类号： H01L21/321
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an abrasive, and a negatively charged polymer or copolymer, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the substrate to polish the metal layer of the substrate. The negatively charged polymer or copolymer comprises one or more monomers selected from sulfonic acids, sulfonates, sulfates, phosphonic acids, phosphonates, and phosphates, has a molecular weight of 20,000 g/mol or more, and coats at least a portion of the abrasive such that the abrasive has a zeta potential value that is lowered upon interaction of the negatively charged polymer or copolymer with the abrasive.
摘要翻译：本发明提供一种抛光包含含铜金属层的基材的方法。该方法包括以下步骤：（i）提供包含液体载体，抛光垫，研磨剂和带负电的聚合物或共聚物的化学机械抛光系统，（ii）使基材与抛光系统接触，以及（iii））研磨至少一部分基板以抛光基板的金属层。带负电荷的聚合物或共聚物包含选自磺酸，磺酸盐，硫酸盐，膦酸，膦酸盐和磷酸盐中的一种或多种单体，其分子量为20,000g / mol或更高，并且将至少一部分磨料研磨剂的ζ电位值在负电荷聚合物或共聚物与研磨剂相互作用时降低。

4. 发明申请

WO2003019627A2 CMP PROCESS INVOLVING FREQUENCY ANALYSIS-BASED MONITORING 审中-公开
标题翻译：涉及基于频率分析的监测的CMP过程
公开(公告)号：WO2003019627A2
公开(公告)日：2003-03-06
申请号：PCT/US2002/026328
申请日：2002-08-19
申请人： CABOT MICROELECTRONICS CORPORATION
发明人： CARTER, Phillip, W. , CHAMBERLAIN, Jeffrey, P.
IPC分类号： H01L21/00
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G05B2219/34048 , G05B2219/37534 , G05B2219/49085
摘要： The invention provides a method for monitoring a chemical-mechanical polishing process, comprising receiving a real-time data signal from a chemical-mechanical polishing process, wherein the real-time data signal pertains to a frictional force, torque, or motor current, converting the data signal into a power spectrum of signals with different frequencies whose sum equals that of the original data signal, identifying and monitoring the signal components of the power spectrum corresponding to an aspect of the chemical-mechanical polishing process, detecting a change in the amplitude or frequency of the signal component, and altering the chemical-mechanical polishing process in response to the detected change. The invention also provides an apparatus for carrying out the aforementioned method.
摘要翻译：本发明提供了一种用于监测化学机械抛光工艺的方法，包括从化学 - 机械抛光工艺接收实时数据信号，其中实时数据信号涉及摩擦力，转矩或电机电流，转换将数据信号转换成具有不同频率的信号的功率谱，其总和等于原始数据信号的信号，识别并监测对应于化学机械抛光处理的一个方面的功率谱的信号分量，检测振幅的变化或频率，以及响应于检测到的变化而改变化学机械抛光过程。本发明还提供一种用于执行上述方法的装置。

5. 发明申请

WO2002061008A2 ALKALI METAL-CONTAINING POLISHING SYSTEM AND METHOD 审中-公开
标题翻译：含ALKALI金属的抛光系统和方法
公开(公告)号：WO2002061008A2
公开(公告)日：2002-08-08
申请号：PCT/US2002/005005
申请日：2002-01-14
申请人： CABOT MICROELECTRONICS CORPORATION
发明人： CARTER, Phillip , BOGUSH, Gregory, H. , DE REGE THESAURO, Francesco , SCHROEDER, David, J. , CHAMBERLAIN, Jeffrey, P. , MUELLER, Brian, L.
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09K3/1463 , C09K3/1472
摘要： The invention provides a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, wherein the total ion concentration of the system is above the critical coagulation concentration. The invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a the aforementioned polishing system or a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, and polishing at least a portion of the substrate therewith in about 6 hours or less after the polishing system is prepared.
摘要翻译：本发明提供一种抛光系统，其包括（a）液体载体，（b）碱金属离子，（c）包含胺基和至少一个极性部分的化合物，其中所述极性部分含有至少一个氧原子，和（d）抛光垫和/或研磨剂，其中系统的总离子浓度高于临界凝结浓度。本发明还提供了一种平面化或抛光复合衬底的方法，包括使衬底与上述抛光系统或抛光系统接触，所述抛光系统或抛光系统包括（a）液体载体，（b）碱金属离子，（c）胺基团和至少一个极性部分，其中极性部分含有至少一个氧原子，和（d）抛光垫和/或研磨剂，并且在约6小时或更少的时间内在约6小时或更少的时间内研磨基材的至少一部分准备抛光系统。

6. 发明申请

WO2004033574A1 APPARATUS AND METHOD FOR REPLACING A MEDIA CONTENT ITEM 审中-公开
标题翻译：用于替换媒体内容项目的装置和方法
公开(公告)号：WO2004033574A1
公开(公告)日：2004-04-22
申请号：PCT/IB2003/004296
申请日：2003-09-29
申请人： CABOT MICROELECTRONICS CORPORATION
发明人： SCHROEDER, David, J. , MOEGGENBORG, Kevin, J. , CHOU, Homer , CHAMBERLAIN, Jeffrey, P. , HAWKINS, Joseph, D. , CARTER, Phillip, W.
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , H01L21/3212
摘要： The invention provides methods of polishing a substrate comprising (i) contacting a substrate comprising at least one metal layer comprising copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of the metal layer comprising copper to polish the substrate. The CMP system comprises (a) an abrasive, (b) an amphiphilic nonionic surfactant, (c) a means for oxidizing the metal layer, (d) an organic acid, (e) a corrosion inhibitor, and (f) a liquid carrier. The invention further provides a two-step method of polishing a substrate comprising a first metal layer and a second, different metal layer. The first metal layer is polishing with a first CMP system comprising an abrasive and a liquid carrier, and the second metal layer is polished with a second CMP system comprising (a) an abrasive, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier.
摘要翻译：本发明提供抛光衬底的方法，其包括（i）使包含铜的至少一个金属层与化学机械抛光（CMP）系统接触的衬底和（ii）研磨包含铜的至少一部分金属以抛光底物。 CMP系统包括（a）研磨剂，（b）两亲性非离子表面活性剂，（c）氧化金属层的方法，（d）有机酸，（e）缓蚀剂，和（f）液体载体。本发明还提供一种抛光包括第一金属层和第二不同金属层的基板的两步法。第一金属层用包括研磨剂和液体载体的第一CMP系统抛光，并且第二金属层用第二CMP系统抛光，所述第二CMP系统包括（a）研磨剂，（b）两亲性非离子表面活性剂，和（c）液体载体。

7. 发明申请

WO2003104343A3 METHOD FOR CHEMICAL MECHANICAL POLISHING (CMP) OF LOW-K DIELECTRIC MATERIALS 审中-公开
公开(公告)号：WO2003104343A3
公开(公告)日：2003-12-18
申请号：PCT/IB2003/002266
申请日：2003-05-26
申请人： CABOT MICROELECTRONICS CORPORATION
发明人： MOEGGENBORG, Kevin, J. , CHOU, Homer , HAWKINS, Joseph, D. , CHAMBERLAIN, Jeffrey, P.
IPC分类号： C09G1/00
摘要： The invention provides a method of polishing a substrate containing a low-k dielectric layer comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier, and (ii) abrading at least a portion of the substrate to polish the substrate.

8. 发明申请

WO2003068883A1 ANIONIC ABRASIVE PARTICLES TREATED WITH POSITIVELY-CHARGED POLYELECTROLYTES FOR CMP 审中-公开
标题翻译：用于CMP的正电荷聚电解质处理的阴离子磨料颗粒
公开(公告)号：WO2003068883A1
公开(公告)日：2003-08-21
申请号：PCT/US2003/003930
申请日：2003-02-10
申请人： CABOT MICROELECTRONICS CORPORATION
发明人： CHERIAN, Isaac, K. , CARTER, Phillip, W. , CHAMBERLAIN, Jeffrey, P. , MOEGGENBORG, Kevin, J. , BOLDRIDGE, David, W.
IPC分类号： C09G1/16
CPC分类号： C09K3/1454 , B24B37/044 , B24B37/046 , C09G1/02 , C09K3/1436
摘要： The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.
摘要翻译：本发明提供化学机械抛光系统以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或其中磨料包含与带正电荷的聚电解质静电相关的颗粒。

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