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    • 5. 发明申请
    • SWITCH, ESPECIALLY FUSE SWITCH DISCONNECTOR, AND OVERVOLTAGE PROTECTOR FOR SAID DISCONNECTOR
    • 开关,尤其是FUSE隔离开关,及浪涌保护该种开关
    • WO2008110540A3
    • 2008-10-30
    • PCT/EP2008052837
    • 2008-03-11
    • SIEMENS AGFISCHER ANDREASBAERNKLAU KARL-HANSGOETZ JOSEF
    • FISCHER ANDREASBAERNKLAU KARL-HANSGOETZ JOSEF
    • H01H85/30H02H3/04
    • H01H85/30H01H71/04H02H3/046H02H9/042
    • The invention relates to a switch, especially a fuse switch disconnector, and an overvoltage protector for said disconnector for protecting a consumer (M), especially a motor and transformer that is connected to at least two phases (L1, L2, L3) of an electrical power supply system (SN), especially a supply mains, and is protected from a short circuit and/or overcurrent by means of at least one disconnector element (2a, 2b, 2c) connected to every phase (L1, L2, L3). The fuse switch disconnector comprises electronics (E) surveilling the state of the at least one disconnector element (2a, 2b, 2c) and being connected to the power supply system (SN) via a rectifier circuit (GS) and an energy regulator (ER) mounted downstream thereof, especially a voltage regulator (SR). In order to protect the electronics from overvoltages in the event of short-circuits and overcurrents, a voltage limiter (SR) is connected as the overvoltage protector in parallel to the energy regulator (ER) and a PTC resistor (PTC) is connected in series to the parallel connection of the energy regulator (ER) and the voltage limiter (SR).
    • 本发明涉及一种开关,尤其涉及一种熔丝开关,和一个浪涌保护器用于这种开关,以保护负载(M),尤其是电动机和变压器的其上的电力供给的至少两个相(L1,L2,L3)(SN), 特别是供电网络被连接,并通过在每一相的至少一个(L1,L2,L3)连接中断元件(2A,2B,2C)被保护免受短路和/或过电流时,与所述至少一个中断元件的状态(2a的手段 ,2B,2C)监测电子设备(E),其中(到电源SN)(经由整流电路GS)和下游能量调节器(ER),特别是电压调节器(被)连接SR。 为了保护在短路和过电流的情况下过电压的电子,所以建议在平行(ER),用于所述能量调节器的过电压保护的电压限制器(SR)和串联功率控制器(ER)和电压限制器(SR)的并联电路是一个PTC电阻( PTC)连接。
    • 6. 发明申请
    • METHODS AND APPARATUS FOR SELECTIVE PRE-COATING OF A PLASMA PROCESSING CHAMBER
    • 用于选择性预涂等离子体处理室的方法和设备
    • WO2007120994A3
    • 2008-10-02
    • PCT/US2007063102
    • 2007-03-01
    • LAM RES CORPFISCHER ANDREAS
    • FISCHER ANDREAS
    • H01L21/302
    • H01J37/32642C23C16/4404C23C16/5096H01J37/32623
    • An apparatus for selectively pre-coating a plasma processing chamber, Including a chamber wall is disclosed. The apparatus includesa first set of RF electrodes, the first set of RF electrodes configured to strikea first pre-coat plasma, the first set of RF electrodes defining a first plasma chamber zone. The apparatus also includes a first set of conflnemenr rings disposed around the first set of RF electrodes; and a second set of confinement rings disposed between the Hrst set ofccnfinement rings and the chamber wall. The apparatus further includes a gas delivery system configured to apply a first pre-coat layer to the first phlsxna zone when a first pre-coat gas is delivered and the first set of RF electrodes is energized. The apparatus also includes the gas delivery system configured to apply a second pre-coat layer to the second plasma zone when a second pre-coat gas is delivered.
    • 公开了一种用于选择性预涂覆等离子体处理室的设备,包括室壁。 该设备包括第一组RF电极,第一组RF电极被配置为对第一预涂层等离子体进行冲击,第一组RF电极限定第一等离子体室区域。 该装置还包括围绕第一组RF电极设置的第一组密封环; 以及设置在第一组限制环和腔室壁之间的第二组限制环。 该设备还包括气体输送系统,该气体输送系统构造成当第一预涂覆气体被输送并且第一组RF电极被激励时将第一预涂层施加到第一纤维区域。 该装置还包括气体输送系统,该气体输送系统构造成当输送第二预涂覆气体时将第二预涂层施加到第二等离子体区域。
    • 8. 发明申请
    • SWING DOOR FOR BLOCKING A PASSAGE FOR PERSONS
    • SWING门关闭PEOPLE通道
    • WO2005008015A8
    • 2006-09-14
    • PCT/DE2004001298
    • 2004-06-22
    • WANZL METALLWARENFABRIK KGFISCHER ANDREAS
    • FISCHER ANDREAS
    • B65D81/36E06B11/08
    • E06B11/085
    • The invention relates to a swing door (1) for blocking a passage (33) for persons. Said swing door (1) comprises a support (2) on which a door wing (5) is arranged so as to be pivotable about a vertical axis (3), a locking mechanism (8) that allows the door wing (5) to be locked in a position blocking the passage (33) for persons, and a panic safety device (17) that is located inside the support (2) and allows the locked door wing (5) to be swiveled by applying a predefined minimum force acting upon the door wing (5) in order to open the passage (33) for persons in an emergency. The door wing (5) is provided with a pivoting part (6) inside which a sliding block part (10) is disposed. The panic safety device (17) is provided with a locking bolt (24) that is subjected to the effect of a spring mechanism (32), is supported by a bearing part (18), and engages into the sliding block part (10). The sliding block part (10) also cooperates with the locking bolt (24) in such a way that the sliding block part (10) can be raised by a certain level along the longitudinal axis of the support (2) in order for the door wing (5) to be able to swivel in both directions when the locking mechanism (8) is not activated.
    • 本发明涉及一种摆动门(1),用于封闭一个乘客通道(33),与载体(2)其中门扇(5)被布置成可绕垂直轴(3),具有闭合装置(8),它是 锁定门扇(5)使在乘客通道(33)关闭位置和位于与所述承载件的内部(2)恐慌安全装置(17),其通过施加预定,在门扇(5)锁定门扇的最小力枢转作用 (5)允许在紧急情况下,打开行人通行(33),门扇(5)具有枢转部分(6),在其内部的滑动部(10)和应急锁(17)具有效果的一个 (32)经受一个悬挂装置,通过轴承部件(18)由锁定螺栓(24)被提供,其用于在引导部分(10)接合,其中,所述连杆部分(10)进行 所述锁定栓(24)也配合,虽然不是在锁定装置(8)可沿所述载体(2)的导向部(10)的纵向轴线,以便在两个方向上枢转门扇(5)提出了一个短的距离。
    • 9. 发明申请
    • REDUCING PLASMA IGNITION PRESSURE
    • 降低等离子体点火压力
    • WO2006012003A3
    • 2006-07-06
    • PCT/US2005021098
    • 2005-06-14
    • LAM RES CORPWIEPKING MARKLYNDAKER BRADFORD JKUTHI ANDRASFISCHER ANDREAS
    • WIEPKING MARKLYNDAKER BRADFORD JKUTHI ANDRASFISCHER ANDREAS
    • B23K9/00B23K9/02
    • H01J37/32009H01J37/32082H01J37/32706
    • A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
    • 公开了一种用于处理半导体衬底的等离子体处理系统中的方法。 等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电卡盘。 该方法包括在等离子体点火步骤中点燃等离子体。 当偏置补偿电路向卡盘提供的第一偏置补偿电压基本上为零并且等离子体处理室内的第一室压力低于约90mTorr时,执行等离子体点火步骤。 该方法还包括在等离子体点燃之后的衬底处理步骤中处理衬底。 基板处理步骤采用由偏置补偿电路提供的第二偏置补偿电压,该偏置补偿电压高于第一偏置补偿电压,第二室压力基本上等于第一室压力。