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1. 发明申请

WO2006089708A8 CRYSTALLINE FORMS OF (1RS,3RS,6RS)-6-DIMETHVLAMINOMETHVL-1-(3-METHOXV- PHENYL)CYCLOHEXANE-1 ,3-DIOL HYDROCHLORIDE 审中-公开
标题翻译：（1RS，3RS，6RS）-6-二甲基氨基甲酰基-1-（3-甲氧基 - 苯基）环丙基] -1,3-二氢氯化物的晶体形式
公开(公告)号：WO2006089708A8
公开(公告)日：2007-09-07
申请号：PCT/EP2006001548
申请日：2006-02-21
申请人： GRUENENTHAL GMBH , GRUSS MICHAEL , BUSCHMANN HELMUT , FISCHER ANDREAS , HELL WOLFGANG , LISCHKE DAGMAR
发明人： GRUSS MICHAEL , BUSCHMANN HELMUT , FISCHER ANDREAS , HELL WOLFGANG , LISCHKE DAGMAR
IPC分类号： C07C217/54 , A61K31/135
CPC分类号： C07C217/74 , C07C217/54 , C07C2601/14
摘要： This invention relates to solid crystalline forms of (1 RS,3RS,6RS)-6- Dimethylaminomethyl-1-(3-methoxy-phenyl)cyclohexane-1 ,3-diol hydrochloride (1), methods of producing 1, methods of use of 1, use of 1 as analgesics and pharmaceutical compositions comprising 1.
摘要翻译：本发明涉及（1RS，3RS，6RS）-6-二甲基氨基甲基-1-（3-甲氧基 - 苯基）环己烷-1,3-二醇盐酸盐（1）的固体形式，其制备方法1，使用方法 1，使用1作为止痛剂和包含1的药物组合物。

2. 发明申请

WO2006000441A2 CRYSTALLINE FORMS OF (-)-(1R,2R)-3-(3-DIMETHYLAMINO-1-ETHYL-2-METHYLPROPYL)-PHENOL HYDROCHLORIDE 审中-公开
标题翻译：（ - ） - （1R，2R）-3-（3-二甲基氨基-1-乙基-2-甲基丙基） - 盐酸羟基脯氨酸的结晶形式
公开(公告)号：WO2006000441A2
公开(公告)日：2006-01-05
申请号：PCT/EP2005006884
申请日：2005-06-27
申请人： GRUENENTHAL GMBH , FISCHER ANDREAS , BUSCHMANN HELMUT , GRUSS MICHAEL , LISCHKE DAGMAR
发明人： FISCHER ANDREAS , BUSCHMANN HELMUT , GRUSS MICHAEL , LISCHKE DAGMAR
IPC分类号： C07C15/54 , C07C215/54
CPC分类号： C07C213/10 , C07B2200/07 , C07B2200/13 , C07C215/54
摘要： This invention relates to a new crystalline form of (-)-(1R,2R)-3-(3-dimethylamino-1-ethyl-2-methylpropyl)-phenol hydrochloride, methods of producing same, methods of use and pharmaceutical compositions containing same.
摘要翻译：（ - ） - （1R，2R）-3-（3-二甲氨基-1-乙基-2-甲基丙基） - 苯酚盐酸盐的新结晶形式，其制备方法，使用方法和药物组合物，其中含有相同。

3. 发明申请

WO2006114277A3 DOSAGE FORM WITH IMPROVED RELEASE OF CEFUROXIMAXETIL 审中-公开
标题翻译：与CEFUROXIMAXETIL改进释放药物FORM
公开(公告)号：WO2006114277A3
公开(公告)日：2007-05-24
申请号：PCT/EP2006003814
申请日：2006-04-25
申请人： GRUENENTHAL GMBH , ZIEGLER IRIS , FISCHER ANDREAS
发明人： ZIEGLER IRIS , FISCHER ANDREAS
IPC分类号： A61K9/20 , A61K9/28 , A61K31/43
CPC分类号： A61K9/5047 , A61K9/1611 , A61K9/1652 , A61K31/43 , A61K31/546
摘要： The invention relates to a pharmaceutical composition which comprises cefuroximaxetil and at least one carrageenan selected from the group including ?-carrageenan, ?-carrageenan and ?-carrageenan. The invention also relates to pellets, to a multiparticulate, pharmaceutical dosage form and to a novel crystalline modification of cefuroximaxetil.
摘要翻译：本发明涉及选自由以下组成的组中选择的药物组合物，包括头孢呋辛酯和至少一个角叉菜胶κ-卡拉胶,?κ-卡拉胶和κ-卡拉胶。此外，本发明涉及粒料，一种多，药物Darreichungsforrn和头孢呋辛酯的新结晶变。

4. 发明申请

WO2012154454A2 MITIGATION OF SILICIDE FORMATION ON WAFER BEVEL 审中-公开
标题翻译：减少水分上的硅化物形成
公开(公告)号：WO2012154454A2
公开(公告)日：2012-11-15
申请号：PCT/US2012036018
申请日：2012-05-01
申请人： LAM RES CORP , FISCHER ANDREAS , BASS WILLIAM SCOTT
发明人： FISCHER ANDREAS , BASS WILLIAM SCOTT
IPC分类号： H01L21/3065
CPC分类号： H01L21/02274 , H01L21/28097 , H01L21/28518 , H01L29/517
摘要： A method for preventing formation of metal silicide material on a wafer bevel is provided, where the wafer bevel surrounds a central region of the wafer. The wafer is placed in bevel plasma processing chamber. A protective layer is deposited on the wafer bevel. The wafer is removed from the bevel plasma processing chamber. A metal layer is deposited over at least part of the central region of the wafer, wherein part of the metal layer is deposited over the protective layer. Semiconductor devices are formed while preventing metal silicide formation on the wafer bevel.
摘要翻译：提供了一种用于防止在晶片斜面上形成金属硅化物材料的方法，其中晶片斜面围绕晶片的中心区域。将晶片放置在斜面等离子体处理室中。保护层沉积在晶片斜面上。从斜面等离子体处理室移除晶片。金属层沉积在晶片的中心区域的至少一部分上，其中金属层的一部分沉积在保护层上。形成半导体器件，同时防止在晶片斜面上形成金属硅化物。

5. 发明申请

WO2010036707A3 ADJUSTABLE THERMAL CONTACT BETWEEN AN ELECTROSTATIC CHUCK AND A HOT EDGE RING BY CLOCKING A COUPLING RING 审中-公开
标题翻译：通过连接环绕静电卡盘和热边缘环之间可调节的热接触
公开(公告)号：WO2010036707A3
公开(公告)日：2010-07-01
申请号：PCT/US2009058034
申请日：2009-09-23
申请人： LAM RES CORP , POVOLNY HENRY S , FISCHER ANDREAS
发明人： POVOLNY HENRY S , FISCHER ANDREAS
IPC分类号： H01L21/368 , H01L21/687 , H05H1/34
CPC分类号： H01L21/67103 , H01J37/32642 , H01J37/32715 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/6831 , Y10T279/23 , Y10T403/21
摘要： A clockable device for use with an electrostatic chuck configured to hold a substrate in a plasma environment is disclosed. The clockable device comprises a first portion of the electrostatic chuck having at least one face with variable thermal contact areas located thereon. A second portion of the electrostatic chuck has at least one face with variable thermal contact areas located thereon. The at least one face of the second portion is configured to be placed in thermal contact with the at least one face of the first portion to control a thermal gradient across a face of the substrate.
摘要翻译：公开了一种与静电卡盘一起使用的可定时装置，该静电卡盘构造成将基板保持在等离子体环境中。可计时装置包括具有位于其上的可变热接触区域的至少一个面的静电卡盘的第一部分。静电卡盘的第二部分具有位于其上的可变热接触区域的至少一个面。第二部分的至少一个面构造成与第一部分的至少一个表面热接触，以控制横跨衬底的表面的热梯度。

6. 发明申请

WO2008010943A3 HYBRID RF CAPACITIVELY AND INDUCTIVELY COUPLED PLASMA SOURCE USING MULTIFREQUENCY RF POWERS AND METHODS OF USE THEREOF 审中-公开
标题翻译：混合射频功率和电感耦合等离子体源使用多频RF功率及其使用方法
公开(公告)号：WO2008010943A3
公开(公告)日：2009-04-09
申请号：PCT/US2007015928
申请日：2007-07-13
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , FISCHER ANDREAS
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , FISCHER ANDREAS
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

7. 发明申请

WO2008110540A3 SWITCH, ESPECIALLY FUSE SWITCH DISCONNECTOR, AND OVERVOLTAGE PROTECTOR FOR SAID DISCONNECTOR 审中-公开
标题翻译：开关，尤其是FUSE隔离开关，及浪涌保护该种开关
公开(公告)号：WO2008110540A3
公开(公告)日：2008-10-30
申请号：PCT/EP2008052837
申请日：2008-03-11
申请人： SIEMENS AG , FISCHER ANDREAS , BAERNKLAU KARL-HANS , GOETZ JOSEF
发明人： FISCHER ANDREAS , BAERNKLAU KARL-HANS , GOETZ JOSEF
IPC分类号： H01H85/30 , H02H3/04
CPC分类号： H01H85/30 , H01H71/04 , H02H3/046 , H02H9/042
摘要： The invention relates to a switch, especially a fuse switch disconnector, and an overvoltage protector for said disconnector for protecting a consumer (M), especially a motor and transformer that is connected to at least two phases (L1, L2, L3) of an electrical power supply system (SN), especially a supply mains, and is protected from a short circuit and/or overcurrent by means of at least one disconnector element (2a, 2b, 2c) connected to every phase (L1, L2, L3). The fuse switch disconnector comprises electronics (E) surveilling the state of the at least one disconnector element (2a, 2b, 2c) and being connected to the power supply system (SN) via a rectifier circuit (GS) and an energy regulator (ER) mounted downstream thereof, especially a voltage regulator (SR). In order to protect the electronics from overvoltages in the event of short-circuits and overcurrents, a voltage limiter (SR) is connected as the overvoltage protector in parallel to the energy regulator (ER) and a PTC resistor (PTC) is connected in series to the parallel connection of the energy regulator (ER) and the voltage limiter (SR).
摘要翻译：本发明涉及一种开关，尤其涉及一种熔丝开关，和一个浪涌保护器用于这种开关，以保护负载（M），尤其是电动机和变压器的其上的电力供给的至少两个相（L1，L2，L3）（SN），特别是供电网络被连接，并通过在每一相的至少一个（L1，L2，L3）连接中断元件（2A，2B，2C）被保护免受短路和/或过电流时，与所述至少一个中断元件的状态（2a的手段，2B，2C）监测电子设备（E），其中（到电源SN）（经由整流电路GS）和下游能量调节器（ER），特别是电压调节器（被）连接SR。为了保护在短路和过电流的情况下过电压的电子，所以建议在平行（ER），用于所述能量调节器的过电压保护的电压限制器（SR）和串联功率控制器（ER）和电压限制器（SR）的并联电路是一个PTC电阻（ PTC）连接。

8. 发明申请

WO2007120994A3 METHODS AND APPARATUS FOR SELECTIVE PRE-COATING OF A PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于选择性预涂等离子体处理室的方法和设备
公开(公告)号：WO2007120994A3
公开(公告)日：2008-10-02
申请号：PCT/US2007063102
申请日：2007-03-01
申请人： LAM RES CORP , FISCHER ANDREAS
发明人： FISCHER ANDREAS
IPC分类号： H01L21/302
CPC分类号： H01J37/32642 , C23C16/4404 , C23C16/5096 , H01J37/32623
摘要： An apparatus for selectively pre-coating a plasma processing chamber, Including a chamber wall is disclosed. The apparatus includesa first set of RF electrodes, the first set of RF electrodes configured to strikea first pre-coat plasma, the first set of RF electrodes defining a first plasma chamber zone. The apparatus also includes a first set of conflnemenr rings disposed around the first set of RF electrodes; and a second set of confinement rings disposed between the Hrst set ofccnfinement rings and the chamber wall. The apparatus further includes a gas delivery system configured to apply a first pre-coat layer to the first phlsxna zone when a first pre-coat gas is delivered and the first set of RF electrodes is energized. The apparatus also includes the gas delivery system configured to apply a second pre-coat layer to the second plasma zone when a second pre-coat gas is delivered.
摘要翻译：公开了一种用于选择性预涂覆等离子体处理室的设备，包括室壁。该设备包括第一组RF电极，第一组RF电极被配置为对第一预涂层等离子体进行冲击，第一组RF电极限定第一等离子体室区域。该装置还包括围绕第一组RF电极设置的第一组密封环; 以及设置在第一组限制环和腔室壁之间的第二组限制环。该设备还包括气体输送系统，该气体输送系统构造成当第一预涂覆气体被输送并且第一组RF电极被激励时将第一预涂层施加到第一纤维区域。该装置还包括气体输送系统，该气体输送系统构造成当输送第二预涂覆气体时将第二预涂层施加到第二等离子体区域。

9. 发明申请

WO2005008015A8 SWING DOOR FOR BLOCKING A PASSAGE FOR PERSONS 审中-公开
标题翻译： SWING门关闭PEOPLE通道
公开(公告)号：WO2005008015A8
公开(公告)日：2006-09-14
申请号：PCT/DE2004001298
申请日：2004-06-22
申请人： WANZL METALLWARENFABRIK KG , FISCHER ANDREAS
发明人： FISCHER ANDREAS
IPC分类号： B65D81/36 , E06B11/08
CPC分类号： E06B11/085
摘要： The invention relates to a swing door (1) for blocking a passage (33) for persons. Said swing door (1) comprises a support (2) on which a door wing (5) is arranged so as to be pivotable about a vertical axis (3), a locking mechanism (8) that allows the door wing (5) to be locked in a position blocking the passage (33) for persons, and a panic safety device (17) that is located inside the support (2) and allows the locked door wing (5) to be swiveled by applying a predefined minimum force acting upon the door wing (5) in order to open the passage (33) for persons in an emergency. The door wing (5) is provided with a pivoting part (6) inside which a sliding block part (10) is disposed. The panic safety device (17) is provided with a locking bolt (24) that is subjected to the effect of a spring mechanism (32), is supported by a bearing part (18), and engages into the sliding block part (10). The sliding block part (10) also cooperates with the locking bolt (24) in such a way that the sliding block part (10) can be raised by a certain level along the longitudinal axis of the support (2) in order for the door wing (5) to be able to swivel in both directions when the locking mechanism (8) is not activated.
摘要翻译：本发明涉及一种摆动门（1），用于封闭一个乘客通道（33），与载体（2）其中门扇（5）被布置成可绕垂直轴（3），具有闭合装置（8），它是锁定门扇（5）使在乘客通道（33）关闭位置和位于与所述承载件的内部（2）恐慌安全装置（17），其通过施加预定，在门扇（5）锁定门扇的最小力枢转作用（5）允许在紧急情况下，打开行人通行（33），门扇（5）具有枢转部分（6），在其内部的滑动部（10）和应急锁（17）具有效果的一个（32）经受一个悬挂装置，通过轴承部件（18）由锁定螺栓（24）被提供，其用于在引导部分（10）接合，其中，所述连杆部分（10）进行所述锁定栓（24）也配合，虽然不是在锁定装置（8）可沿所述载体（2）的导向部（10）的纵向轴线，以便在两个方向上枢转门扇（5）提出了一个短的距离。

10. 发明申请

WO2006012003A3 REDUCING PLASMA IGNITION PRESSURE 审中-公开
标题翻译：降低等离子体点火压力
公开(公告)号：WO2006012003A3
公开(公告)日：2006-07-06
申请号：PCT/US2005021098
申请日：2005-06-14
申请人： LAM RES CORP , WIEPKING MARK , LYNDAKER BRADFORD J , KUTHI ANDRAS , FISCHER ANDREAS
发明人： WIEPKING MARK , LYNDAKER BRADFORD J , KUTHI ANDRAS , FISCHER ANDREAS
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32706
摘要： A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
摘要翻译：公开了一种用于处理半导体衬底的等离子体处理系统中的方法。等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电卡盘。该方法包括在等离子体点火步骤中点燃等离子体。当偏置补偿电路向卡盘提供的第一偏置补偿电压基本上为零并且等离子体处理室内的第一室压力低于约90mTorr时，执行等离子体点火步骤。该方法还包括在等离子体点燃之后的衬底处理步骤中处理衬底。基板处理步骤采用由偏置补偿电路提供的第二偏置补偿电压，该偏置补偿电压高于第一偏置补偿电压，第二室压力基本上等于第一室压力。

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