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    • 3. 发明申请
    • POST-DISCHARGE PLASMA COATING DEVICE FOR WIRED SUBSTRATES
    • 用于有线基板的放电后等离子体涂覆装置
    • WO2018050562A1
    • 2018-03-22
    • PCT/EP2017/072635
    • 2017-09-08
    • LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)
    • BULOU, SimonCHOQUET, PatrickGAULAIN, ThomasGERARD, Mathieu
    • H01J37/32C23C16/503H05H1/24
    • The invention is directed to a post-discharge plasma coating device (2) for a wired substrate (4) comprising an inner tubular electrode (6) on an inner tubular wall (3) for receiving the substrate (4) and a precursor (8) moving axially in a working direction (30); an outer tubular electrode (10) coaxial with, and surrounding, the inner tubular electrode (6). The inner and outer electrodes (6,10) are configured to be supplied with an electrical power source (18) for producing a plasma when a plasma gas (12) is supplied between said electrodes and is thereby excited, the plasma excited gas (19) flowing axially in the working direction (30) and reacting with the precursor (8) in a coating area (16) at the end of the inner tubular wall (3) in said direction. The inner tubular wall (3) extends axially towards the coating area (16) at least until, preferably beyond, the end of the outer electrode (10), in the working direction (30) and at least one dielectric tubular wall extends axially between the inner tubular electrode (6) and the outer tubular electrode (10).
    • 本发明涉及一种用于接线基板(4)的放电后等离子体涂覆设备(2),其包括位于内管状壁(3)上的内管状电极(6),用于接收基板 (4)和沿工作方向(30)轴向移动的前驱体(8); 与内部管状电极(6)同轴并围绕内部管状电极(6)的外部管状电极(10)。 当等离子体气体(12)被供应到所述电极之间并由此被激发时,内部和外部电极(6,10)被配置为供应用于产生等离子体的电源(18),等离子体激发的气体 )沿工作方向(30)轴向流动并且在所述方向上在内部管状壁(3)的端部处的涂覆区域(16)中与前体(8)反应。 内管状壁(3)沿工作方向(30)至少直到,优选超过外电极(10)的端部,朝着涂覆区域(16)轴向延伸,并且至少一个介电管状壁在轴向 内部管状电极(6)和外部管状电极(10)。
    • 4. 发明申请
    • DEVICE FOR PERFORMING ATMOSPHERIC PRESSURE PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION AT LOW TEMPERATURE
    • 用于在低温下进行大气压等离子体增强化学气相沉积的装置
    • WO2018050758A1
    • 2018-03-22
    • PCT/EP2017/073165
    • 2017-09-14
    • LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)
    • BABA, KamalBOSCHER, NicolasBULOU, SimonCHOQUET, PatrickGERARD, MathieuQUESADA GONZALEZ, Miguel
    • H01J37/32C23C16/06H05H1/46
    • The invention is directed to a plasma post-discharge deposition device (100) for depositing crystalline metal oxide derivative on a substrate (112), said device comprising a gas source (116) with a substrate inlet (102), a post-discharge deposition chamber (110) with a substrate outlet (104), said substrate inlet and said substrate outlet defining a longitudinal central axis, and a dielectric tube (108) placed between said gas source and said deposition chamber on said longitudinal central axis; configured to confine a plasma discharge and comprising a discharge zone lying on the internal surface of said dielectric tube and a central zone centred on said longitudinal central axis. Said deposition device is remarkable in that said central zone is located at a distance comprised between 1 mm and 2.5 mm from the internal surface of said dielectric tube. The invention is also directed to a plasma-enhanced chemical vapour deposition method.
    • 本发明涉及用于在衬底(112)上沉积结晶金属氧化物衍生物的等离子体放电后沉积装置(100),所述装置包括具有衬底入口(116)的气体源(116) 具有衬底出口(104)的放电后沉积室(110),所述衬底入口和所述衬底出口限定纵向中心轴线,以及放置在所述气体源和所述沉积室之间的介电管(108) 所述纵向中心轴线; 被配置为限制等离子体放电并且包括位于所述介电管的内表面上的放电区和以所述纵向中心轴为中心的中心区。 所述沉积装置的显着之处在于所述中心区域位于离所述电介质管的内表面1mm至2.5mm之间的距离处。 本发明还涉及等离子体增强化学气相沉积方法。