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1. 发明申请

WO2018050758A1 DEVICE FOR PERFORMING ATMOSPHERIC PRESSURE PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION AT LOW TEMPERATURE 审中-公开
标题翻译：用于在低温下进行大气压等离子体增强化学气相沉积的装置
公开(公告)号：WO2018050758A1
公开(公告)日：2018-03-22
申请号：PCT/EP2017/073165
申请日：2017-09-14
申请人： LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)
发明人： BABA, Kamal , BOSCHER, Nicolas , BULOU, Simon , CHOQUET, Patrick , GERARD, Mathieu , QUESADA GONZALEZ, Miguel
IPC分类号： H01J37/32 , C23C16/06 , H05H1/46
摘要： The invention is directed to a plasma post-discharge deposition device (100) for depositing crystalline metal oxide derivative on a substrate (112), said device comprising a gas source (116) with a substrate inlet (102), a post-discharge deposition chamber (110) with a substrate outlet (104), said substrate inlet and said substrate outlet defining a longitudinal central axis, and a dielectric tube (108) placed between said gas source and said deposition chamber on said longitudinal central axis; configured to confine a plasma discharge and comprising a discharge zone lying on the internal surface of said dielectric tube and a central zone centred on said longitudinal central axis. Said deposition device is remarkable in that said central zone is located at a distance comprised between 1 mm and 2.5 mm from the internal surface of said dielectric tube. The invention is also directed to a plasma-enhanced chemical vapour deposition method.
摘要翻译：本发明涉及用于在衬底（112）上沉积结晶金属氧化物衍生物的等离子体放电后沉积装置（100），所述装置包括具有衬底入口（116）的气体源（116）具有衬底出口（104）的放电后沉积室（110），所述衬底入口和所述衬底出口限定纵向中心轴线，以及放置在所述气体源和所述沉积室之间的介电管（108）所述纵向中心轴线; 被配置为限制等离子体放电并且包括位于所述介电管的内表面上的放电区和以所述纵向中心轴为中心的中心区。所述沉积装置的显着之处在于所述中心区域位于离所述电介质管的内表面1mm至2.5mm之间的距离处。本发明还涉及等离子体增强化学气相沉积方法。

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