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1. 发明申请

WO2010053804A3 ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：多波长化学机械抛光的端点控制
公开(公告)号：WO2010053804A3
公开(公告)日：2010-07-22
申请号：PCT/US2009062433
申请日：2009-10-28
申请人： APPLIED MATERIALS INC , ZHANG JIMIN , OSTERHELD THOMAS H , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , JEW STEPHEN
发明人： ZHANG JIMIN , OSTERHELD THOMAS H , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , JEW STEPHEN
IPC分类号： H01L21/304 , B24B37/013
CPC分类号： B24B37/013 , B24B49/04
摘要： A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected thickness that each substrate will have at a target time is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates have closer to the same thickness at the target time than without the adjustment.
摘要翻译：计算机实现的方法包括在抛光装置中同时抛光衬底。每个基底具有通过独立可变抛光参数独立控制的抛光速率。随着每个基板的厚度变化的测量数据在用原位监测系统进行抛光时从每个基板获得。基于测量数据确定每个基板在目标时间具有的投影厚度。调整至少一个基板的抛光参数以调节至少一个基板的抛光速率，使得基板在目标时间比不进行调节更接近相同的厚度。

2. 发明申请

WO2012030475A4 ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光相同板上变化厚度的多个基板的端点控制
公开(公告)号：WO2012030475A4
公开(公告)日：2012-08-16
申请号：PCT/US2011046660
申请日：2011-08-04
申请人： APPLIED MATERIALS INC , DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
发明人： DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/013 , B24B37/042 , B65B1/366 , G06F17/5086 , H01L21/30625 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
摘要翻译：第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异是使用在线计量站测量的第一预稀释厚度和第二预抛光厚度来确定的。基于第一预期所需抛光时间和第二预期所需抛光时间之间的差异来确定初始周期的持续时间。在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少的预期需要的抛光时间，同时对第一基板和第二基板中的哪一个施加压力，则不施加压力更大的预期需要的抛光时间。在初始周期之后，对第一基板和第二基板施加压力。

3. 发明申请

WO2012030475A3 ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光中同一厚度多种基材厚度的终点控制
公开(公告)号：WO2012030475A3
公开(公告)日：2012-07-05
申请号：PCT/US2011046660
申请日：2011-08-04
申请人： APPLIED MATERIALS INC , DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
发明人： DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/013 , B24B37/042 , B65B1/366 , G06F17/5086 , H01L21/30625 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
摘要翻译：使用在线测量台处测量的第一预抛光厚度和第二预抛光厚度来确定第一基板的第一预期所需抛光时间与第二基板的第二预期所需抛光时间之间的差异。基于第一预期所需抛光时间和第二预期所需抛光时间之间的差确定初始阶段的持续时间。在抛光操作开始时的初始阶段，对第一基板和第二基板中的任一者施加压力的期望抛光时间较小，同时对第一基板和第二基板中的任一者施加压力预计需要更长的抛光时间。在初始阶段之后，对第一基板和第二基板施加压力。

4. 发明申请

WO2011152935A3 CONTROL OF OVERPOLISHING OF MULTIPLE SUBSTRATES ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光过程中多个基体在同一板上的过度控制
公开(公告)号：WO2011152935A3
公开(公告)日：2012-02-23
申请号：PCT/US2011034210
申请日：2011-04-27
申请人： APPLIED MATERIALS INC , ZHANG JIMIN , CARLSSON INGEMAR , JEW STEPHEN , SWEDEK BOGUSLAW A
发明人： ZHANG JIMIN , CARLSSON INGEMAR , JEW STEPHEN , SWEDEK BOGUSLAW A
IPC分类号： H01L21/304
CPC分类号： B24B37/013 , B24B49/12
摘要： A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time.
摘要翻译：抛光方法包括在同一抛光垫上同时抛光两个基板，第一基板和第二基板。存储默认的过度抛光时间，并且现场监控系统监控两个基板。原位监测系统还分别确定第一和第二基底的第一抛光终点时间和第二抛光终点时间。抛光方法还包括计算过度抛光停止时间，其中抛光停止时间在第一抛光终点时间加上默认过度抛光时间与第二抛光终点时间加上默认过度抛光时间之间。第一衬底的抛光继续经过第一抛光终点时间，并且第二衬底的抛光继续经过第二抛光终点时间。在抛光停止时间同时停止第一基板和第二基板的抛光。

5. 发明申请

WO2010126902A3 TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光的温度控制
公开(公告)号：WO2010126902A3
公开(公告)日：2011-02-03
申请号：PCT/US2010032609
申请日：2010-04-27
申请人： APPLIED MATERIALS INC , XU KUN , ZHANG JIMIN , JEW STEPHEN , OSTERHELD THOMAS H
发明人： XU KUN , ZHANG JIMIN , JEW STEPHEN , OSTERHELD THOMAS H
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B55/02 , B24B37/015
摘要： A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system.
摘要翻译：一种化学机械抛光设备，包括用于保持具有抛光表面的垫的台板，用于在抛光步骤期间将基板和抛光表面保持在一起的子系统以及定向为测量抛光表面的温度的温度传感器，其中子系统接受由传感器测量的温度并且被编程为响应于测量的温度改变抛光过程参数。在一个方面，一种化学机械抛光设备，其具有用于保持具有抛光表面的垫的台板，用于将流体从源输送到抛光表面的流体输送系统，以及温度控制器，其在操作期间控制流体的温度由运送系统运送。

6. 发明申请

WO2010126902A4 TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光温度控制
公开(公告)号：WO2010126902A4
公开(公告)日：2011-03-31
申请号：PCT/US2010032609
申请日：2010-04-27
申请人： APPLIED MATERIALS INC , XU KUN , ZHANG JIMIN , JEW STEPHEN , OSTERHELD THOMAS H
发明人： XU KUN , ZHANG JIMIN , JEW STEPHEN , OSTERHELD THOMAS H
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B55/02 , B24B37/015
摘要： A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system.
摘要翻译：一种化学机械抛光装置，包括用于在抛光步骤期间将用于保持具有抛光表面的焊盘的垫板，用于保持基板和抛光表面的子系统以及用于测量抛光表面的温度的温度传感器，其中所述子系统接受由传感器测量的温度，并被编程为响应于测量的温度改变抛光工艺参数。一方面，一种具有用于保持具有抛光表面的焊盘的压板的化学机械抛光装置，用于将流体从源传送到抛光表面的流体输送系统以及在操作期间控制流体温度的温度控制器由运送系统运输。

7. 发明申请

WO2011152958A2 TUNING OF POLISHING PROCESS IN MULTI-CARRIER HEAD PER PLATEN POLISHING STATION 审中-公开
标题翻译：多功能抛光站多台车头抛光工艺的调试
公开(公告)号：WO2011152958A2
公开(公告)日：2011-12-08
申请号：PCT/US2011035631
申请日：2011-05-06
申请人： APPLIED MATERIALS INC , MAI DAVID H , JEW STEPHEN , HU XIAOYUAN
发明人： MAI DAVID H , JEW STEPHEN , HU XIAOYUAN
IPC分类号： H01L21/304
CPC分类号： B24B37/042
摘要： An apparatus and method for simulating a substrate being polished in a multiple carrier head per platen station when no substrate is provided in one or more of the multiple carrier heads is described. In one embodiment, a method for processing a substrate includes providing a single substrate to a polishing station adapted to process a plurality of substrates on a single polishing pad using at least a first carrier head and a second carrier head, retaining the single substrate in the first carrier head while the second carrier head remains substrate-free, urging the first carrier head and the second carrier head toward a polishing surface of the polishing pad; and providing relative movement between the polishing pad and the first carrier head.
摘要翻译：描述了在多个载体头中的一个或多个中没有设置基板时，模拟在每个压板站的多个载体头中被抛光的基板的装置和方法。在一个实施例中，用于处理衬底的方法包括向抛光站提供单个衬底，所述抛光站适于使用至少第一载体头和第二载体头在单个抛光垫上处理多个衬底，将单个衬底保持在第一载体头，而第二载体头保持无基材，将第一载体头和第二载体头推向抛光垫的抛光表面; 以及在所述抛光垫和所述第一承载头之间提供相对运动。

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