专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2007142690A3 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：WO2007142690A3
公开(公告)日：2008-12-24
申请号：PCT/US2006060559
申请日：2006-11-06
申请人： APPLIED MATERIALS INC , MA PAUL , SHAH KAVITA , WU DIEN-YEH , GANGULI SESHADRI , MARCADAL CHRISTOPHE , WU FREDERICK C , CHU SCHUBERT S
发明人： MA PAUL , SHAH KAVITA , WU DIEN-YEH , GANGULI SESHADRI , MARCADAL CHRISTOPHE , WU FREDERICK C , CHU SCHUBERT S
IPC分类号： C23F1/00 , C23C16/22 , C23C16/26 , C23C16/44 , C23C16/50 , H01L21/306
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE- ALD) process. In one embodiment, a process chamber (50) is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The process chamber (50) comprises components that are capable of being electrically insulated, electrically grounded or RP energized. In one example, a chamber (50) body and a gas manifold (800) assembly are grounded and separated by electrically insulated components, such as an insulation cap (700), a plasma screen insert (600) and an isolation ring (200). A showerhead (300), a plasma baffle (500) and a water box (400) are positioned between the insulated components and become RF hot when activated by a plasma generator (92). Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber (50).
摘要翻译：本发明的实施例提供一种被配置为在原子层沉积（ALD）工艺（诸如等离子体增强型ALD（PE-ALD））工艺中形成材料的装置。在一个实施例中，处理室（50）被配置为在PE-ALD过程期间将衬底暴露于一系列气体和等离子体。处理室（50）包括能够被电绝缘，电接地或RP通电的部件。在一个示例中，腔室（50）主体和气体歧管（800）组件由诸如绝缘帽（700），等离子体屏幕插入件（600）和隔离环（200）的电绝缘部件接地并分离，。喷头（300），等离子体挡板（500）和水箱（400）位于绝缘部件之间，并且当被等离子体发生器（92）激活时变为RF热。本发明的其它实施例提供沉积工艺以在处理室（50）内形成材料层。

2. 发明申请

WO2007115000A3 CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD 审中-公开
标题翻译：化学输送装置用于CVD或ALD
公开(公告)号：WO2007115000A3
公开(公告)日：2008-12-11
申请号：PCT/US2007064276
申请日：2007-03-19
申请人： APPLIED MATERIALS INC , NAKASHIMA NORMAN , MARCADAL CHRISTOPHE , GANGULI SESHADRI , MA PAUL , CHU SCHUBERT S
发明人： NAKASHIMA NORMAN , MARCADAL CHRISTOPHE , GANGULI SESHADRI , MA PAUL , CHU SCHUBERT S
IPC分类号： F16K3/36 , F16K11/20
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： An ampoule assembly is configured with a bypass line and valve to allow the purging of the lines and valves connected to the ampoule. The ampoule assembly, in one embodiment, includes an ampoule, an inlet line, an outlet line, and a bypass line connected between the inlet line and the outlet line, the bypass line having a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line. The shut-off valve disposed in the bypass line may be remotely controllable. Also, additional remotely controllable shut-off valves may be provided in the inlet and the outlet lines.
摘要翻译：安瓿组件配置有旁通管线和阀，以允许清洗连接到安瓿的管线和阀。在一个实施例中，安瓿组件包括安瓿瓶，入口管线，出口管线和连接在入口管线和出口管线之间的旁通管线，旁通管线具有设置在其中的截止阀以流体耦合或解耦入口管线和出口管路。设置在旁路管路中的截止阀可以是远程控制的。此外，可以在入口和出口管线中设置附加的可远程控制的截止阀。

3. 发明申请

WO2004106584B1 METHOD AND APPARATUS FOR GENERATING A PRECURSOR FOR A SEMICONDUCTOR PROCESSING SYSTEM 审中-公开
标题翻译：用于生成半导体加工系统的前驱体的方法和装置
公开(公告)号：WO2004106584B1
公开(公告)日：2005-02-17
申请号：PCT/US2004016715
申请日：2004-05-27
申请人： APPLIED MATERIALS INC , CHEN LING , KU VINCENT W , CHUNG HUA , MARCADAL CHRISTOPHE , GANGULI SESHADRI , LIN JENNY , WU DIEN-YEH , OUYE ALAN , CHANG MEI
发明人： CHEN LING , KU VINCENT W , CHUNG HUA , MARCADAL CHRISTOPHE , GANGULI SESHADRI , LIN JENNY , WU DIEN-YEH , OUYE ALAN , CHANG MEI
IPC分类号： C23C16/18 , C23C16/34 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/285 , H01L21/768
CPC分类号： C23C16/45525 , C23C16/18 , C23C16/34 , C23C16/4481 , C23C16/4487 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.
摘要翻译：本发明的实施例涉及一种用于生成用于半导体处理系统（320）的前体的装置。该装置包括具有侧壁（402），顶部和底部的罐（300）。罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。

4. 发明申请

WO2007076076A3 GAS COUPLER FOR SUBSTRATE PROCESSING CHAMBER 审中-公开
标题翻译：用于衬底加工室的气体接头
公开(公告)号：WO2007076076A3
公开(公告)日：2007-12-27
申请号：PCT/US2006049151
申请日：2006-12-21
申请人： APPLIED MATERIALS INC , HUSTON JOEL , TOBIN JEFFERY , MARCADAL CHRISTOPHE
发明人： HUSTON JOEL , TOBIN JEFFERY , MARCADAL CHRISTOPHE
IPC分类号： F16L27/00 , C23C16/00 , H01L21/306
CPC分类号： F16L41/03 , H01L21/67017
摘要： A gas coupler is capable of conducting gas between a gas component, gas souce and substrate processing chamber. The gas coupler comprises a metal block comprising a gas component seating surface having a plurality of gas component coupling ports. The block also has a plurality of sidewalls at right angles to the gas component seating surface, each sidewall comprising a counterbored gas orifice. A plurality of right-angled internal passageways are each connected to a gas component coupling port. Each internal passageway terminates at counterbored gas orifice on a different sidewall surface so that each gas component coupling port is fluidly connected to a different sidewall.
摘要翻译：气体耦合器能够在气体组分，气体和底物处理室之间传导气体。气体联接器包括金属块，该金属块包括具有多个气体部件联接口的气体组分就座表面。该块还具有与气体组件就座表面成直角的多个侧壁，每个侧壁包括沉孔气孔。多个直角内部通道各自连接到气体部件联接口。每个内部通道在不同的侧壁表面上的沉孔气孔处终止，使得每个气体部件联接口流体地连接到不同的侧壁。

5. 发明申请

WO2012145492A3 APPARATUS FOR DEPOSITION OF MATERIALS ON A SUBSTRATE 审中-公开
标题翻译：用于在基材上沉积材料的装置
公开(公告)号：WO2012145492A3
公开(公告)日：2013-01-17
申请号：PCT/US2012034222
申请日：2012-04-19
申请人： APPLIED MATERIALS INC , SANCHEZ ERROL ANTONIO C , COLLINS RICHARD O , CARLSON DAVID K , BAUTISTA KEVIN , DINIZ HERMAN P , PATALAY KAILASH , MYO NYI O , DEMARS DENNIS L , MARCADAL CHRISTOPHE , JUMPER STEVE , KUPPURAO SATHEESH
发明人： SANCHEZ ERROL ANTONIO C , COLLINS RICHARD O , CARLSON DAVID K , BAUTISTA KEVIN , DINIZ HERMAN P , PATALAY KAILASH , MYO NYI O , DEMARS DENNIS L , MARCADAL CHRISTOPHE , JUMPER STEVE , KUPPURAO SATHEESH
IPC分类号： H01L21/205
CPC分类号： C23C16/0236 , C23C16/301 , C23C16/4412 , C23C16/45563 , C23C16/45565 , C23C16/4584 , C23C16/46
摘要： Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译：本文提供了在衬底上沉积材料的方法和装置。在一些实施例中，用于处理衬底的装置可以包括处理室，其具有设置在其中的衬底支撑件，以支撑衬底的处理表面，设置在衬底支撑件的第一侧上的注射器，并且具有第一流动路径，第一处理气体和第二流动路径以提供独立于第一处理气体的第二处理气体，其中喷射器被定位成提供穿过基板的处理表面的第一和第二处理气体，设置在基板支撑件上方的喷头将第一工艺气体提供到衬底的处理表面，以及设置在衬底支撑件的与注射器相对的第二侧的排气口，以从处理室排出第一和第二工艺气体。

6. 发明申请

WO2006020265A3 ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING MATERIALS USING THE TANTALUM PRECURSOR TAIMATA 审中-公开
标题翻译：使用TANTALUM PRECURSOR TAIMATA的含钽材料的原子层沉积
公开(公告)号：WO2006020265A3
公开(公告)日：2007-04-05
申请号：PCT/US2005025486
申请日：2005-07-19
申请人： APPLIED MATERIALS INC , MARCADAL CHRISTOPHE , WANG RONGJUN , CHUNG HUA , MAITY NIRMALYA
发明人： MARCADAL CHRISTOPHE , WANG RONGJUN , CHUNG HUA , MAITY NIRMALYA
IPC分类号： H01L21/44 , H01L21/285 , H01L21/768
CPC分类号： H01L29/495 , C23C16/18 , C23C16/30 , C23C16/45553 , H01L21/28079 , H01L21/28562 , H01L21/76843 , H01L21/76864 , H01L29/4958 , H01L29/517
摘要： In one embodiment of the invention, a method for depositing a tantalum-containing layer on a substrate within a process chamber is provided which includes sequentially exposing the substrate to a tantalum precursor and at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The tantalum precursor is usually tertiaryamylimido-tris(dimethylamido)tantalum (TAIMATA). The ALD process is repeated until the tantalum-containing material is deposited with a predetermined thickness. Usually, the TAIMATA is preheated prior pulsing the tantalum precursor into the process chamber. The tantalum-containing material may include tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier layer or an adhesion layer within a via or as a gate electrode material within a source/drain device.
摘要翻译：在本发明的一个实施例中，提供了一种用于在处理室内的衬底上沉积含钽层的方法，其包括将衬底顺序地暴露于钽前体和至少一个次级前体，以沉积含钽材料原子层沉积（ALD）工艺。钽前体通常是叔戊酰亚胺基 - 三（二甲基氨基）钽（TAIMATA）。重复ALD处理直到含有钽的材料以预定厚度沉积。通常，TAIMATA在将钽前体脉冲进入处理室之前被预热。含钽材料可以包括钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。含钽材料可以作为阻挡层或粘合层沉积在源极/漏极器件内的通路或栅极电极材料内。

7. 发明申请

WO0239500A3 USE OF A BARRIER SPUTTER REACTOR TO REMOVE AN UNDERLYING BARRIER LAYER 审中-公开
标题翻译：使用障碍物反应器去除下面的障碍物层
公开(公告)号：WO0239500A3
公开(公告)日：2004-02-19
申请号：PCT/US0145167
申请日：2001-11-01
申请人： APPLIED MATERIALS INC
发明人： CHEN LING , GANGULI SESHADRI , CAO WEI , MARCADAL CHRISTOPHE
IPC分类号： H01L21/285 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76844 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76865
摘要： A method and resultant structure of forming barrier layers in a via hole extending through an inter-level dielectric layer. A first barrier layer (30) of TiSin is conformally coated by chemical vapor deposition onto the bottom and sidewalls of the via holes and in the field are on top of the dielectric layer. A single plasma sputter reactor is used to perform two steps. In the first step, the wafer rather than the target is sputtered with high energy ions to remove the barrier layer (30) from the bottom of the via but not from the sidewalls. In the second step, a second barrier layer (40), for example of Ta/TaN, is sputter deposited onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls. Chamber conditions in the first step, including balancing neutrals and ions, may be controlled to remove the first barrier layer from the via bottom while leaving it on the more exposed the field area.
摘要翻译：在延伸穿过层间电介质层的通孔中形成势垒层的方法和结果。 TiSin的第一阻挡层（30）通过化学气相沉积保形地涂覆到通孔的底部和侧壁上，并且在场中位于介电层的顶部。使用单个等离子体溅射反应器执行两个步骤。在第一步骤中，用高能离子溅射晶片而不是靶，以从通孔的底部除去阻挡层（30），而不是从侧壁去除。在第二步骤中，例如Ta / TaN的第二阻挡层（40）溅射沉积到通孔底部和侧壁上。这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。可以控制第一步骤中的室内条件，包括平衡中性粒子和离子，以将第一阻挡层从通孔底部移除，同时将其留在更暴露的场区域。

8. 发明申请

WO02079537A3 W-CVD WITH FLUORINE-FREE TUNGSTEN NUCLEATION 审中-公开
标题翻译： W-CVD与无氟钨的成核
公开(公告)号：WO02079537A3
公开(公告)日：2002-12-19
申请号：PCT/US0209311
申请日：2002-03-25
申请人： APPLIED MATERIALS INC
发明人： JIAN PING , GANGULI SESHADRI , LITTAU KARL A , MARCADAL CHRISTOPHE , CHEN LING
IPC分类号： C23C16/02 , C23C16/16 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
CPC分类号： C23C16/0281 , C23C16/16 , H01L21/28556
摘要： In accordance with the present invention, a method is provided for forming an improved tungsten layer. In one embodiment, a CVD method for depositing a tungsten layer on a substrate includes forming a bilayer of titanium-nitride/titanium (TiN/Ti) over the substrate, placing the substrate in a deposition zone of a substrate processing chamber, and introducing a fluorine-free tungsten-containing precursor and a carrier gas into the deposition zone for forming a tungsten nucleation layer over the TiN/Ti bilayer. The Ti layer is between the TiN layer and the substrate. After the tungsten nucleation formation, a process gas including a tungsten-containing source and a reduction agent are introduced into the deposition zone for forming the bulk tungsten layer. In one embodiment, the fluorine-free tungsten-containing precursor includes W(CO)6, and the carrier gas is Argon.
摘要翻译：根据本发明，提供了一种用于形成改进的钨层的方法。在一个实施例中，用于在衬底上沉积钨层的CVD方法包括在衬底上形成氮化钛/钛（TiN / Ti）双层，将衬底放置在衬底处理室的沉积区中，无氟含钨前体和载气进入沉积区，以在TiN / Ti双层上形成钨成核层。 Ti层位于TiN层和衬底之间。在钨成核形成之后，包括含钨源和还原剂的工艺气体被引入用于形成块钨层的沉积区中。在一个实施例中，无氟含钨前体包括W（CO）6，载气是氩。

9. 发明申请

WO2004064147A3 INTEGRATION OF ALD/CVD BARRIERS WITH POROUS LOW K MATERIALS 审中-公开
标题翻译： ALD / CVD BARRIERS与多孔低K材料的集成
公开(公告)号：WO2004064147A3
公开(公告)日：2004-09-02
申请号：PCT/US0340857
申请日：2003-12-19
申请人： APPLIED MATERIALS INC
发明人： CHUNG HUA , BEKIARIS NIKOLAOS , MARCADAL CHRISTOPHE , CHEN LING
IPC分类号： C23C16/34 , H01B13/00 , H01L21/285 , H01L21/306 , H01L21/311 , H01L21/768
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/02063 , H01L21/28556 , H01L21/28562 , H01L21/31116 , H01L21/76802 , H01L21/76814 , H01L21/76838 , H01L21/76873 , H01L21/76876
摘要： A method for processing substrates is provided. The method includes depositing and etching a low k dielectric layer on a substrate, pre-cleaning the substrate with a plasma, and depositing a barrier layer on the substrate. Pre-cleaning the substrate minimizes the diffusion of the barrier layer into the low k dielectric layer and/or enhances the deposition of the barrier layer.
摘要翻译：提供了一种处理衬底的方法。该方法包括沉积和蚀刻基底上的低k电介质层，用等离子体预清洁衬底，以及在衬底上沉积阻挡层。预清洁衬底使阻挡层向低k电介质层的扩散最小化和/或增强阻挡层的沉积。

10. 发明申请

WO2004053947A3 TITANIUM SILICON NITRIDE (TISIN) BARRIER LAYER FOR COPPER DIFFUSION 审中-公开
标题翻译：用于铜扩散的钛硅酸盐（TISIN）阻挡层
公开(公告)号：WO2004053947A3
公开(公告)日：2004-08-12
申请号：PCT/US0319813
申请日：2003-06-23
申请人： APPLIED MATERIALS INC
发明人： MARCADAL CHRISTOPHE , CHEN LING
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45531 , H01L21/28562 , H01L21/76846 , Y10T428/24926
摘要： Methods and an apparatus of forming a titanium silicon nitride (TiSiN) layer are disclosed. The titanium silicon nitride (TiSiN) layer may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor, a silicon-containing gas and a nitrogen-containing gas on a substrate. The titanium-containing precursor, the silicon-containing gas and the nitrogen-containing gas react to form the titanium silicon nitride (TiSiN) layer on the substrate. The formation of the titanium silicon nitride (TiSiN) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, a titanium silicon nitride (TiSiN) layer may be used as a diffusion barrier for a copper metallization process.
摘要翻译：公开了形成氮化硅钛（TiSiN）层的方法和装置。可以通过在基板上交替吸附含钛前体，含硅气体和含氮气体的循环沉积工艺来形成氮化钛（TiSiN）层。含钛前体，含硅气体和含氮气体反应以在衬底上形成氮化钛（TiSiN）层。氮化钛（TiSiN）层的形成与集成电路制造工艺兼容。在一个集成电路制造工艺中，可以使用氮化硅钛（TiSiN）层作为铜金属化工艺的扩散阻挡层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式