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    • 1. 发明申请
    • CARBON NANOTUBE-BASED SOLAR CELLS
    • 基于碳纳米管的太阳能电池
    • WO2010144551A2
    • 2010-12-16
    • PCT/US2010037937
    • 2010-06-09
    • APPLIED MATERIALS INCNALAMASU OMKARAMGAY CHARLESPUSHPARAJ VICTOR LSINGH KAUSHAL KVISSER ROBERT JFOAD MAJEED AHOFMANN RALF
    • NALAMASU OMKARAMGAY CHARLESPUSHPARAJ VICTOR LSINGH KAUSHAL KVISSER ROBERT JFOAD MAJEED AHOFMANN RALF
    • H01L31/042
    • H01L31/022425B82Y10/00H01L31/0322H01L31/03529H01L31/0384H01L31/0749H01L51/0048H01L51/4213Y02E10/541Y02P70/521
    • Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate. The photoactive solar cell layer may be comprised of amorphous silicon p/i/n thin films; although, concepts of the present invention are also applicable to solar cells with absorber layers of microcrystalline silicon, SiGe, carbon doped microcrystalline silicon, CIS, CIGS, CISSe and various p-type II-VI binary compounds and ternary and quaternary compounds.
    • 太阳能电池提供有碳纳米管(CNT),其用于限定太阳能电池的微米/亚微米几何形状; 和/或作为电荷转运体,用于从吸收层有效去除电荷载体以降低吸收层中电子 - 空穴复合的速率。 太阳能电池可以包括:基底; 在基材表面上的金属催化剂的多个区域; 形成在金属催化剂的多个区域上的多个碳纳米管束,每个束包括大致垂直于基板的表面排列的碳纳米管; 以及形成在所述碳纳米管束和所述基板的露出表面上的光活性太阳能电池层,其中所述光活性太阳能电池层在所述碳纳米管束和所述基板的暴露表面上连续。 光电太阳能电池层可以由非晶硅p / i / n薄膜组成; 尽管本发明的概念也适用于具有微晶硅,SiGe,碳掺杂微晶硅,CIS,CIGS,CISSe和各种p型II-VI二元化合物和三元和四元化合物的吸收层的太阳能电池。
    • 2. 发明申请
    • DIELECTRIC DEPOSITION USING A REMOTE PLASMA SOURCE
    • 用远离等离子体源的介质沉积
    • WO2011119611A3
    • 2011-12-22
    • PCT/US2011029433
    • 2011-03-22
    • APPLIED MATERIALS INCHOFMANN RALFFOAD MAJEED A
    • HOFMANN RALFFOAD MAJEED A
    • C23C14/34C23C14/35C23C14/50
    • C23C14/3407C23C14/0036C23C14/06C23C14/354H01J37/32357H01J37/34H05H1/46H05H2001/4667
    • A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target.
    • 溅射沉积系统包括真空室和等离子体源,真空室包括用于保持真空室中的真空的真空泵,用于向真空室供应处理气体的气体入口,溅射靶和在真空室内的基板保持器, 到真空室并且远离溅射靶定位,等离子体源被配置为形成延伸到真空室中的高密度等离子体束。 等离子体源可以包括矩形横截面源室,电磁体和射频线圈,其中矩形横截面源室和射频线圈被配置为给高密度等离子体束提供细长的卵形横截面 。 此外,溅射靶材的表面可以以非平面形式构造,以在基板支架上的基板表面处提供均匀的等离子体能量沉积到靶材和/或均匀的溅射沉积。 溅射沉积系统可以包括等离子体扩散系统,用于整形高密度等离子体束以完全且均匀地覆盖溅射靶。
    • 7. 发明申请
    • NANOCRYSTAL FORMATION
    • 纳米结构
    • WO2008005892A3
    • 2008-12-18
    • PCT/US2007072577
    • 2007-06-29
    • APPLIED MATERIALS INCKRISHNA NETY MHOFMANN RALFSINGH KAUSHAL KARMSTRONG KARL J
    • KRISHNA NETY MHOFMANN RALFSINGH KAUSHAL KARMSTRONG KARL J
    • H01L21/28H01L29/76
    • H01L21/28273H01L29/42332H01L29/7881
    • In one embodiment, a method for forming a metallic nanocrystalline material on a substrate is provided which includes exposing a substrate to a pretreatment process, forming a tunnel dielectric layer on the substrate, exposing the substrate to a post-treatment process, forming a metallic nanocrystalline layer on the tunnel dielectric layer, and forming a dielectric capping layer on the metallic nanocrystalline layer. The method further provides forming the metallic nanocrystalline layer having a nanocrystalline density of at least about 5OE012 cm-2, preferably, at least about 8OE012 cm-2. In one example, the metallic nanocrystalline layer contains platinum, ruthenium, or nickel. In another embodiment, a method for forming a multi-layered metallic nanocrystalline material on a substrate is provided which includes forming a plurality of bi-layers, wherein each bi-layer contains an intermediate dielectric layer deposited on a metallic nanocrystalline layer. Some of the examples include 10, 50, 100, 200, or more bi-layers.
    • 在一个实施例中,提供了一种在衬底上形成金属纳米晶体材料的方法,其包括将衬底暴露于预处理工艺,在衬底上形成隧道电介质层,将衬底暴露于后处理工艺,形成金属纳米晶体 并在所述金属纳米晶层上形成介电覆盖层。 该方法进一步提供形成金属纳米晶层,其纳米晶密度为至少约50E012cm -2,优选为至少约80O12 cm -2。 在一个实例中,金属纳米晶层包含铂,钌或镍。 在另一个实施例中,提供了一种在衬底上形成多层金属纳米晶体材料的方法,其包括形成多个双层,其中每个双层包含沉积在金属纳米晶层上的中间介电层。 一些示例包括10,50,100,200或更多的双层。