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1. 发明申请

WO2012015578A1 SHOWERHEAD SUPPORT STRUCTURE FOR IMPROVED GAS FLOW 审中-公开
标题翻译：改善气体流量的淋浴支撑结构
公开(公告)号：WO2012015578A1
公开(公告)日：2012-02-02
申请号：PCT/US2011/043358
申请日：2011-07-08
申请人： APPLIED MATERIALS, INC. , TINER, Robin L. , CHOI, Soo Young , WANG, Qunhua , CHEN, Jrjyan Jerry
发明人： TINER, Robin L. , CHOI, Soo Young , WANG, Qunhua , CHEN, Jrjyan Jerry
IPC分类号： C23C16/455 , C23C16/50 , H01L21/205
CPC分类号： B05B1/005 , C23C16/45565 , H01J37/3244
摘要： Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.
摘要翻译：本发明的实施例通常提供用于在处理室中支撑气体分配喷头的装置和方法。在一个实施例中，提供了一种用于真空室的气体分配喷头。所述气体分配喷头包括具有第一侧和与所述第一侧相对的第二侧的主体和穿过所述主体形成的多个气体通道，所述气体通道包括形成在所述第一侧中的第一孔，所述第一孔流体地联接到第二侧通过限制孔形成在第二侧中的孔，以及形成在至少一个气体通道的第一孔中的悬挂特征。

2. 发明申请

WO2013151786A1 FLIP EDGE SHADOW FRAME 审中-公开
标题翻译：卷边边框
公开(公告)号：WO2013151786A1
公开(公告)日：2013-10-10
申请号：PCT/US2013/032990
申请日：2013-03-19
申请人： APPLIED MATERIALS, INC. , WANG, Qunhua , CHOI, Soo Young , TINER, Robin L. , WHITE, John M. , FURUTA, Gaku , PARK, Beom Soo
发明人： WANG, Qunhua , CHOI, Soo Young , TINER, Robin L. , WHITE, John M. , FURUTA, Gaku , PARK, Beom Soo
IPC分类号： H01L21/205
CPC分类号： C23C14/042 , C23C16/042
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
摘要翻译：本文描述了用于处理衬底的装置。用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面，以及与阴影框体连接的可拆卸唇缘。可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

3. 发明申请

WO2012005983A3 PRECISE TEMPERATURE CONTROL FOR TEOS APPLICATION BY HEAT TRANSFER FLUID 审中-公开
公开(公告)号：WO2012005983A3
公开(公告)日：2012-01-12
申请号：PCT/US2011/041826
申请日：2011-06-24
申请人： APPLIED MATERIALS, INC. , LEE, Dongsuh , WANG, Weijie , STERLING, William N. , KIM, Sam H. , CHOI, Soo Young , PARK, Beom Soo , KIM, Beom Soo , WANG, Qunhua
发明人： LEE, Dongsuh , WANG, Weijie , STERLING, William N. , KIM, Sam H. , CHOI, Soo Young , PARK, Beom Soo , KIM, Beom Soo , WANG, Qunhua
IPC分类号： H01L21/316 , H01L21/205 , C23C16/448
摘要： Embodiments of the invention generally provide a mixing block for mixing precursors and/or cleaning agent which has the advantage of maintaining the temperature and improving the mixing effect of the precursors, cleaning agent or the mixture thereof to eliminate the substrate-to-substrate variation, thereby providing improved process uniformity.

4. 发明申请

WO2008106542A1 APPARATUS AND METHOD FOR DEPOSITION OVER LARGE AREA SUBSTRATES 审中-公开
标题翻译：用于在大面积基板上沉积的装置和方法
公开(公告)号：WO2008106542A1
公开(公告)日：2008-09-04
申请号：PCT/US2008/055174
申请日：2008-02-27
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , YADAV, Sanjay , WANG, Qunhua , CHOI, Soo Young , WANG, Weijie
发明人： WHITE, John M. , YADAV, Sanjay , WANG, Qunhua , CHOI, Soo Young , WANG, Weijie
IPC分类号： H05H1/00 , C23C16/44
CPC分类号： C23C16/4485 , C23C16/509 , H01J37/321 , H01J37/32449
摘要： The present invention generally relates to an inductively coupled plasma apparatus. When depositing utilizing a plasma generated from a showerhead, the plasma may not be evenly distributed to the edge of the substrate. By inductively coupling plasma to the chamber in an area corresponding to the chamber walls, the plasma distribution within the chamber may be evenly distributed and deposition upon the substrate may be substantially even. By vaporizing the processing gas prior to entry into the processing chamber, the plasma may also be even and thus contribute to an even deposition on the substrate.
摘要翻译：本发明一般涉及电感耦合等离子体装置。当利用从喷头产生的等离子体进行沉积时，等离子体可能不会均匀分布到基板的边缘。通过在对应于室壁的区域中将等离子体感应耦合到室，室内的等离子体分布可以均匀分布，并且在衬底上的沉积可以基本上均匀。通过在进入处理室之前蒸发处理气体，等离子体也可以是均匀的并且因此有助于在衬底上的均匀沉积。

5. 发明申请

WO2013052298A1 METHODS FOR DEPOSITING A SILICON CONTAINING LAYER WITH ARGON GAS DILUTION 审中-公开
标题翻译：用含有气体稀释剂的含硅层的方法
公开(公告)号：WO2013052298A1
公开(公告)日：2013-04-11
申请号：PCT/US2012/056928
申请日：2012-09-24
申请人： APPLIED MATERIALS, INC. , WANG, Qunhua , WANG, Weijie , CHOI, Young Jin , CHO, Seon-Mee , CUI, Yi , PARK, Beom Soo , CHOI, Soo Young
发明人： WANG, Qunhua , WANG, Weijie , CHOI, Young Jin , CHO, Seon-Mee , CUI, Yi , PARK, Beom Soo , CHOI, Soo Young
IPC分类号： H01L29/786 , H01L21/205 , H01L21/31
CPC分类号： H01L21/31 , C23C16/24 , C23C16/345 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02664 , H01L21/02675 , H01L29/66757 , H01L29/786 , H01L29/7869 , H01L2021/775
摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.
摘要翻译：本公开的实施例通常提供在TFT器件中形成含硅层的方法。硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅氧键保留以形成基本上无氢的含硅层。

6. 发明申请

WO2008045794A1 CONTAMINATION REDUCING LINER FOR INDUCTIVELY COUPLED CHAMBER 审中-公开
标题翻译：污染减少衬板用于电感耦合室
公开(公告)号：WO2008045794A1
公开(公告)日：2008-04-17
申请号：PCT/US2007/080595
申请日：2007-10-05
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , WANG, Qunhua
发明人： CHOI, Soo Young , WANG, Qunhua
IPC分类号： C23C16/00 , H05B7/00
CPC分类号： C23C16/4404
摘要： A method and apparatus for depositing a film through a plasma enhance chemical vapor deposition process is provided. In one embodiment, an apparatus includes a processing chamber having a coil disposed in the chamber and routed proximate the chamber wall. A liner is disposed over the coil and is protected by a coating of a material, wherein the coating of material has a film property similar to the liner. In one embodiment, the liner is a silicon containing material and is protected by the coating of the material. Thus, in the event that some of the protective coating of material is inadvertently sputtered, the sputter material is not a source of contamination if deposited on the substrate along with the deposited deposition film on the substrate.
摘要翻译：提供了一种通过等离子体沉积膜的方法和装置，提高了化学气相沉积工艺。在一个实施例中，一种设备包括处理室，其具有设置在室中的线圈并且靠近室壁布置。衬套设置在线圈上方并被材料涂层保护，其中材料涂层具有类似于衬垫的膜性质。在一个实施例中，衬垫是含硅材料，并且被材料的涂层保护。因此，在材料的一些保护涂层被无意中溅射的情况下，如果沉积在衬底上并且沉积在衬底上的沉积膜，则溅射材料不是污染源。

7. 发明申请

WO2015116433A1 CORNER SPOILER FOR IMPROVING PROFILE UNIFORMITY 审中-公开
标题翻译：用于改善轮廓均匀性的角撑板
公开(公告)号：WO2015116433A1
公开(公告)日：2015-08-06
申请号：PCT/US2015/012014
申请日：2015-01-20
申请人： APPLIED MATERIALS, INC.
发明人： ZHAO, Lai , FURUTA, Gaku , WANG, Qunhua , TINER, Robin L. , PARK, Beom Soo , CHOI, Soo Young , YADAV, Sanjay D.
IPC分类号： G02F1/13
CPC分类号： C23C16/45591 , C23C16/45559 , C23C16/45563 , C23C16/4585 , H01J37/32091 , H01J37/32623 , H01J37/32651
摘要： The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.
摘要翻译：本发明涉及一种设计用于通过改变气体流量来降低基板拐角区域的高沉积速率的拐角扰流板。在一个实施例中，用于处理室的拐角扰流板包括由介电材料制成的L形主体，其中L形主体被配置为改变处理室中的基板角落处的等离子体分布。 L形本体包括第一和第二腿，其中第一和第二腿在L形体的内角处相交。第一腿或第二腿的长度是在第一腿或第二腿与内角之间限定的距离的两倍。在另一个实施例中，用于沉积室的阴影框架包括具有矩形开口的矩形体，以及在矩形体的角落处联接到矩形体的一个或多个拐角扰流板。

8. 发明申请

WO2015016980A1 GAS DIFFUSER HOLE DESIGN FOR IMPROVING EDGE UNIFORMITY 审中-公开
标题翻译：气体扩散孔设计改善边缘均匀性
公开(公告)号：WO2015016980A1
公开(公告)日：2015-02-05
申请号：PCT/US2014/024963
申请日：2014-03-12
申请人： APPLIED MATERIALS, INC.
发明人： ZHAO, Lai , FURUTA, Gaku , WANG, Qunhua , CHOI, Soo Young , LEE, Dongsuh , PARK, Beom Soo , YANG, Hsiao-Lin
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/505 , C23C16/45565
摘要： In one embodiment, a diffuser for a deposition chamber includes a plate having edge regions, corner regions and a center region, and plurality of gas passages comprising an orifice hole are formed between an upstream side and a downstream side of the plate, wherein one or more of a length or a diameter of the orifice holes in one or more of the corner regions or the edge regions of the plate is different than a corresponding length or a corresponding diameter of the orifice holes in the center region of the plate.
摘要翻译：在一个实施例中，用于沉积室的扩散器包括具有边缘区域，拐角区域和中心区域的板，并且在板的上游侧和下游侧之间形成包括孔口的多个气体通道，其中一个或在板的一个或多个拐角区域或边缘区域中的孔的更多的长度或直径不同于板的中心区域中的孔口的对应的长度或相应的直径。

9. 发明申请

WO2014182433A1 MULTI-LAYER AMORPHOUS SILICON STRUCTURE WITH IMPROVED POLY-SILICON QUALITY AFTER EXCIMER LASER ANNEAL 审中-公开
标题翻译：多层非晶硅结构，具有改进的聚硅氧烷质量后激光雷达
公开(公告)号：WO2014182433A1
公开(公告)日：2014-11-13
申请号：PCT/US2014/034938
申请日：2014-04-22
申请人： APPLIED MATERIALS, INC.
发明人： WANG, Qunhua , ZHAO, Lai , CHOI, Soo, Young
IPC分类号： C23C16/44 , H01L21/205
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/4405 , C23C16/56 , H01L21/02488 , H01L21/02532 , H01L21/02592 , H01L21/02675
摘要： The embodiments described herein generally relate to methods for forming a multi-layer amorphous silicon structure that may be used in thin film transistor devices. In one embodiment, a method includes positioning a substrate comprising a buffer layer in a process chamber, the process chamber comprising a processing region, forming a plurality of amorphous silicon layers and annealing the amorphous silicon layers to form a polycrystalline silicon layer. Forming the plurality of layers includes delivering a silicon-containing precursor and a first activation gas to the processing region to deposit a first amorphous silicon layer over the buffer layer, the silicon-containing precursor and the first activation gas being activated by a plasma and maintaining a continuous flow of the silicon-containing precursor while delivering a second activation gas, without the first activation gas, to the processing region to deposit a second silicon layer on the first silicon layer.
摘要翻译：本文描述的实施例通常涉及用于形成可用于薄膜晶体管器件的多层非晶硅结构的方法。在一个实施例中，一种方法包括将包括缓冲层的衬底定位在处理室中，所述处理室包括处理区域，形成多个非晶硅层并退火非晶硅层以形成多晶硅层。形成多个层包括将含硅前体和第一活化气体输送到处理区域以在缓冲层上沉积第一非晶硅层，含硅前体和第一活化气体被等离子体激活并维持连续流动的含硅前体，同时将没有第一活化气体的第二活化气体输送到处理区域，以在第一硅层上沉积第二硅层。

10. 发明申请

WO2015116430A1 GAS CONFINER ASSEMBLY FOR ELIMINATING SHADOW FRAME 审中-公开
标题翻译：用于消除阴影框架的气体限制器组件
公开(公告)号：WO2015116430A1
公开(公告)日：2015-08-06
申请号：PCT/US2015/011974
申请日：2015-01-20
申请人： APPLIED MATERIALS, INC.
发明人： ZHAO, Lai , WANG, Qunhua , TINER, Robin L. , CHOI, Soo Young , PARK, Beom Soo
IPC分类号： C23C16/50 , C23C16/455
CPC分类号： C23C16/45591 , C23C16/4585 , H01J37/32449 , H01J37/32715
摘要： The present disclosure relates to a gas confiner assembly designed to reduce the non-uniform deposition rates by confining the gas flow and changing the local gas flow distribution near the edge regions of the substrate. The material, size, shape and other features of the gas confiner assembly can be varied based on the processing requirements and associated deposition rates. In one embodiment, a gas confiner assembly for a processing chamber comprises a gas confiner configured to decrease gas flow and compensate for high deposition rates on edge regions of substrates. The gas confiner assembly also comprises a cover disposed below the gas confiner. The cover is configured to prevent a substrate support from being exposed to plasma.
摘要翻译：本公开涉及一种气体收集器组件，其被设计成通过限制气流并改变靠近基板的边缘区域的局部气流分布来减小不均匀的沉积速率。气体配制器组件的材料，尺寸，形状和其他特征可以根据加工要求和相关的沉积速率而变化。在一个实施例中，用于处理室的气体配制器组件包括配置成减小气体流量并补偿衬底边缘区域上的高沉积速率的气体配料器。气体收集器组件还包括设置在气体分配器下方的盖。盖被配置成防止基板支撑件暴露于等离子体。

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