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1. 发明申请

WO2012015578A1 SHOWERHEAD SUPPORT STRUCTURE FOR IMPROVED GAS FLOW 审中-公开
标题翻译：改善气体流量的淋浴支撑结构
公开(公告)号：WO2012015578A1
公开(公告)日：2012-02-02
申请号：PCT/US2011/043358
申请日：2011-07-08
申请人： APPLIED MATERIALS, INC. , TINER, Robin L. , CHOI, Soo Young , WANG, Qunhua , CHEN, Jrjyan Jerry
发明人： TINER, Robin L. , CHOI, Soo Young , WANG, Qunhua , CHEN, Jrjyan Jerry
IPC分类号： C23C16/455 , C23C16/50 , H01L21/205
CPC分类号： B05B1/005 , C23C16/45565 , H01J37/3244
摘要： Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.
摘要翻译：本发明的实施例通常提供用于在处理室中支撑气体分配喷头的装置和方法。在一个实施例中，提供了一种用于真空室的气体分配喷头。所述气体分配喷头包括具有第一侧和与所述第一侧相对的第二侧的主体和穿过所述主体形成的多个气体通道，所述气体通道包括形成在所述第一侧中的第一孔，所述第一孔流体地联接到第二侧通过限制孔形成在第二侧中的孔，以及形成在至少一个气体通道的第一孔中的悬挂特征。

2. 发明申请

WO2010042860A2 RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于大型等离子体加工室的RF返回路径
公开(公告)号：WO2010042860A2
公开(公告)日：2010-04-15
申请号：PCT/US2009/060230
申请日：2009-10-09
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , KUDELA, Jozef , BAEK, Jonghoon , CHEN, Jrjyan Jerry , MCPHERSON, Stephen , TINER, Robin L.
发明人： WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , KUDELA, Jozef , BAEK, Jonghoon , CHEN, Jrjyan Jerry , MCPHERSON, Stephen , TINER, Robin L.
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32174
摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.
摘要翻译：提供了一种具有低阻抗的RF返回路径的方法和装置，其将衬底支撑件耦合到等离子体处理系统中的室壁。在一个实施例中，处理室包括室主体，其具有室侧壁，底部和盖组件，其由限定加工区域的室侧壁支撑，设置在室主体的处理区域中的基板支撑件，衬底支撑组件的边缘，以及RF返回路径，其具有耦合到阴影框架的第一端和联接到室侧壁的第二端。

3. 发明申请

WO2013123431A1 METHOD FOR DEPOSITING AN ENCAPSULATING FILM 审中-公开
标题翻译：沉积膜的方法
公开(公告)号：WO2013123431A1
公开(公告)日：2013-08-22
申请号：PCT/US2013/026492
申请日：2013-02-15
申请人： APPLIED MATERIALS, INC. , CHEN, Jrjyan Jerry , WON, Tae Kyung , PARK, Beom Soo , CHOI, Young Jin , CHOI, Soo Young
发明人： CHEN, Jrjyan Jerry , WON, Tae Kyung , PARK, Beom Soo , CHOI, Young Jin , CHOI, Soo Young
IPC分类号： H01L51/56 , H05B33/10 , H05B33/04
CPC分类号： H01L51/5256 , C23C16/26 , C23C16/345
摘要： A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.
摘要翻译：描述了用于将材料层（例如封装膜）沉积到基底上的方法和装置。在一个实施方案中，封装膜形成方法包括将气体混合物输送到处理室中，所述气体混合物包含含硅氧烷气体，第一含氮气体，第二含氮气体和氢气; 通过向位于处理室内的基板上方间隔约800密耳至约1800密耳的气体分配板组件施加约0.350瓦特/平方厘米至约0.903瓦特/平方厘米，对处理室内的气体混合物通电; 将加压气体混合物在处理室内保持在约0.5托至约3.0托之间的压力; 以及在通电的气体混合物的存在下在基底上沉积无机封装膜。在其他实施例中，有机介电层夹在无机封装层之间。

4. 发明申请

WO2013003004A2 METHOD OF IGZO AND ZNO TFT FABRICATION WITH PECVD SiO2 PASSIVATION 审中-公开
标题翻译：用PECVD SiO2钝化制备IGZO和ZNO TFT的方法
公开(公告)号：WO2013003004A2
公开(公告)日：2013-01-03
申请号：PCT/US2012/041603
申请日：2012-06-08
申请人： APPLIED MATERIALS, INC. , CHEN, Jrjyan Jerry , CHOI, Soo Young , YIM, Dong-Kil , YE, Yan
发明人： CHEN, Jrjyan Jerry , CHOI, Soo Young , YIM, Dong-Kil , YE, Yan
CPC分类号： H01L29/66969 , H01L21/02565 , H01L29/78606 , H01L29/7869
摘要： The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited thereover, the active channel is exposed to an N 2 O or O 2 plasma. The interface between the active channel and the passivation layers or etch stop layers are either altered or damaged during formation of the source and drain electrodes. The N 2 O or O 2 plasma alters and repairs the interface between the active channel and the passivation or etch stop layers.
摘要翻译：本发明总体上涉及一种制造TFT的方法。 TFT具有包含IGZO或氧化锌的有源沟道。在形成源电极和漏电极之后，但是在其上沉积钝化层或蚀刻停止层之前，将活性通道暴露于N 2 O或O 2等离子体。在形成源电极和漏电极期间，有源沟道与钝化层或蚀刻停止层之间的界面或者被改变或者被损坏。 N 2 O或O 2等离子体改变并修复有源沟道和钝化层或蚀刻停止层之间的界面。

5. 发明申请

WO2012109038A3 METHOD FOR HYBRID ENCAPSULATION OF AN ORGANIC LIGHT EMITTING DIODE 审中-公开
公开(公告)号：WO2012109038A3
公开(公告)日：2012-08-16
申请号：PCT/US2012/023129
申请日：2012-01-30
申请人： APPLIED MATERIALS, INC. , CHEN, Jrjyan Jerry , CHOI, Soo Young
发明人： CHEN, Jrjyan Jerry , CHOI, Soo Young
IPC分类号： H01L51/50 , H05B33/04 , H05B33/10
摘要： Methods and apparatus for encapsulating organic light emitting diode (OLED) structures disposed on a substrate using a hybrid layer of material are provided. The processing parameters used during deposition of the hybrid layer of material allow control of the characteristics of the deposited hybrid layer. The hybrid layer may be deposited such that the layer has characteristics of an inorganic material in some sublayers of the hybrid layer and characteristics of an organic material in other sublayers of the hybrid layer. Use of the hybrid material allows OLED encapsulation using a single hard mask for the complete encapsulating process with low cost and without alignment issues present in conventional processes.

6. 发明申请

WO2012109113A2 METHOD FOR ENCAPSULATING AN ORGANIC LIGHT EMITTING DIODE 审中-公开
标题翻译：封装有机发光二极管的方法
公开(公告)号：WO2012109113A2
公开(公告)日：2012-08-16
申请号：PCT/US2012/023853
申请日：2012-02-03
申请人： APPLIED MATERIALS, INC. , HAAS, Dieter , WHITE, John M. , KWAK, Byung-Sung Leo , CHOI, Soo Young , CHEN, Jrjyan Jerry , DIEGUEZ-CAMPO, Jose Manuel
发明人： HAAS, Dieter , WHITE, John M. , KWAK, Byung-Sung Leo , CHOI, Soo Young , CHEN, Jrjyan Jerry , DIEGUEZ-CAMPO, Jose Manuel
IPC分类号： H01L51/50 , H05B33/04 , H01L51/56
CPC分类号： H01L51/0014 , H01L51/5253
摘要： Methods for encapsulating OLED structures disposed on a substrate using a soft/polymer mask technique are provided. The soft/polymer mask technique can efficiently provide a simple and low cost OLED encapsulation method, as compared to convention hard mask patterning techniques. The soft/polymer mask technique can utilize a single polymer mask to complete the entire encapsulation process with low cost and without alignment issues present when using conventional metal masks. Rather than utilizing a soft/polymer mask, the encapsulation layers may be blanked deposited and then laser ablated such that no masks are utilized during the encapsulation process.
摘要翻译：提供了使用软/聚合物掩模技术来封装设置在衬底上的OLED结构的方法。与常规硬掩模图案化技术相比，软/聚合物掩模技术可以有效地提供简单且低成本的OLED封装方法。软/聚合物掩模技术可以利用单个聚合物掩模以低成本完成整个封装过程，并且在使用传统金属掩模时不存在对准问题。除了使用软/聚合物掩模之外，封装层可以被冲切沉积，然后被激光烧蚀，使得在封装过程中不使用掩模。

7. 发明申请

WO2014039192A1 METHOD FOR HYBRID ENCAPSULATION OF AN ORGANIC LIGHT EMITTING DIODE 审中-公开
标题翻译：有机发光二极管混合渗透方法
公开(公告)号：WO2014039192A1
公开(公告)日：2014-03-13
申请号：PCT/US2013/053743
申请日：2013-08-06
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Jrjyan Jerry , CHOI, Soo Young
IPC分类号： H01L51/52 , H05B33/04 , H05B33/10
CPC分类号： H01L51/5253 , H01L51/56
摘要： Methods and apparatus for encapsulating organic light emitting diode (OLED) structures disposed on a substrate using a hybrid layer of material are provided. The encapsulation methods may be performed as single or multiple chamber processes. The processing parameters used during deposition of the hybrid layer of material allow control of the characteristics of the deposited hybrid layer. The hybrid layer may be deposited such that the layer has characteristics of an inorganic material in some sublayers of the hybrid layer and characteristics of an organic material in other sublayers of the hybrid layer. Use of the hybrid material allows OLED encapsulation using a single hard mask for the complete encapsulating process with low cost and without alignment issues present in conventional processes.
摘要翻译：提供了使用混合材料层封装置于衬底上的有机发光二极管（OLED）结构的方法和装置。封装方法可以作为单室或多室工艺进行。在沉积混合材料层期间使用的处理参数允许控制沉积的混合层的特性。混合层可以沉积成使得该层具有混合层的一些子层中的无机材料的特性和混合层的其它亚层中的有机材料的特性。使用混合材料允许使用单个硬掩模的OLED封装用于完整的封装工艺，其具有低成本且在常规工艺中不存在对准问题。

8. 发明申请

WO2021173309A1 PROCESSES FOR IMPROVING THIN-FILM ENCAPSULATION 审中-公开
公开(公告)号：WO2021173309A1
公开(公告)日：2021-09-02
申请号：PCT/US2021/016243
申请日：2021-02-02
申请人： APPLIED MATERIALS, INC.
发明人： WU, Wen-Hao , CHEN, Jrjyan Jerry
IPC分类号： H01L51/56 , H01L51/52
摘要： A method and apparatus for forming an encapsulation layer on an organic light emitting diode (OLED) patterned substrate are described. A sidewall planarization layer fills voids in a scalloped sidewall of a wall feature on the OLED patterned substrate. The sidewall planarization layer is cured in the same chamber as the deposition of the sidewall planarization layer. A barrier layer is formed on the sidewall planarization layer. The sidewall planarization layer provides a planarized surface for good adhesion of the barrier layer over the sidewall planarization layer which minimizes the possibility of defects to the OLED patterned substrate from moisture of oxygen penetrating the OLED patterned substrate.

9. 发明申请

WO2019133509A2 METHOD OF REDUCING LEAKAGE CURRENT OF STORAGE CAPACITORS FOR DISPLAY APPLICATIONS 审中-公开
公开(公告)号：WO2019133509A2
公开(公告)日：2019-07-04
申请号：PCT/US2018/067223
申请日：2018-12-21
申请人： APPLIED MATERIALS, INC.
发明人： ZHAI, Yujia , RUI, Xiangxin , ZHAO, Lai , CHOI, Soo Young , CHEN, Jrjyan Jerry
摘要： Embodiments of the present disclosure generally relate to a method for forming a metal-insulator-metal (MIM) capacitor for display applications. The method includes forming a metal electrode over a substrate, and exposing the metal electrode to a nitrogen containing plasma in a processing chamber. The substrate is maintained at a temperature ranging from about 20 degrees Celsius to about 200 degrees Celsius as the metal electrode is exposed to the nitrogen containing plasma, which converts a surface of the metal electrode to a nitride. The method further includes forming a high K dielectric layer on the nitride surface of the metal electrode in the same processing chamber. With the plasma treating of the metal electrode, leakage current of the MIM capacitor is reduced and the breakdown field of the MIM capacitor is improved.

10. 发明申请

WO2014163773A1 PLASMA CURING OF PECVD HMDSO FILM FOR OLED APPLICATIONS 审中-公开
标题翻译：用于OLED应用的PECVD HMDSO膜的等离子体固化
公开(公告)号：WO2014163773A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/016103
申请日：2014-02-12
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Jrjyan Jerry , CHOI, Soo Young
IPC分类号： H01L51/56 , H05B33/10
CPC分类号： H01L51/56 , C09D183/04 , C23C16/401 , C23C16/50 , C23C16/56 , H01L51/0034 , H01L51/5256
摘要： Methods for forming an OLED device are described. An encapsulation layer having a buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is deposited on the first barrier layer and is cured with a fluorine-containing plasma at a temperature less than 100 degrees Celsius. The second barrier layer is then deposited on the buffer layer.
摘要翻译：描述用于形成OLED器件的方法。具有夹在阻挡层之间的缓冲层的封装层沉积在OLED结构上。缓冲层沉积在第一阻挡层上，并在低于100摄氏度的温度下用含氟等离子体固化。然后将第二阻挡层沉积在缓冲层上。

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