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1. 发明申请

WO2014039192A1 METHOD FOR HYBRID ENCAPSULATION OF AN ORGANIC LIGHT EMITTING DIODE 审中-公开
标题翻译：有机发光二极管混合渗透方法
公开(公告)号：WO2014039192A1
公开(公告)日：2014-03-13
申请号：PCT/US2013/053743
申请日：2013-08-06
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Jrjyan Jerry , CHOI, Soo Young
IPC分类号： H01L51/52 , H05B33/04 , H05B33/10
CPC分类号： H01L51/5253 , H01L51/56
摘要： Methods and apparatus for encapsulating organic light emitting diode (OLED) structures disposed on a substrate using a hybrid layer of material are provided. The encapsulation methods may be performed as single or multiple chamber processes. The processing parameters used during deposition of the hybrid layer of material allow control of the characteristics of the deposited hybrid layer. The hybrid layer may be deposited such that the layer has characteristics of an inorganic material in some sublayers of the hybrid layer and characteristics of an organic material in other sublayers of the hybrid layer. Use of the hybrid material allows OLED encapsulation using a single hard mask for the complete encapsulating process with low cost and without alignment issues present in conventional processes.
摘要翻译：提供了使用混合材料层封装置于衬底上的有机发光二极管（OLED）结构的方法和装置。封装方法可以作为单室或多室工艺进行。在沉积混合材料层期间使用的处理参数允许控制沉积的混合层的特性。混合层可以沉积成使得该层具有混合层的一些子层中的无机材料的特性和混合层的其它亚层中的有机材料的特性。使用混合材料允许使用单个硬掩模的OLED封装用于完整的封装工艺，其具有低成本且在常规工艺中不存在对准问题。

2. 发明申请

WO2013003004A2 METHOD OF IGZO AND ZNO TFT FABRICATION WITH PECVD SiO2 PASSIVATION 审中-公开
标题翻译：用PECVD SiO2钝化制备IGZO和ZNO TFT的方法
公开(公告)号：WO2013003004A2
公开(公告)日：2013-01-03
申请号：PCT/US2012/041603
申请日：2012-06-08
申请人： APPLIED MATERIALS, INC. , CHEN, Jrjyan Jerry , CHOI, Soo Young , YIM, Dong-Kil , YE, Yan
发明人： CHEN, Jrjyan Jerry , CHOI, Soo Young , YIM, Dong-Kil , YE, Yan
CPC分类号： H01L29/66969 , H01L21/02565 , H01L29/78606 , H01L29/7869
摘要： The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited thereover, the active channel is exposed to an N 2 O or O 2 plasma. The interface between the active channel and the passivation layers or etch stop layers are either altered or damaged during formation of the source and drain electrodes. The N 2 O or O 2 plasma alters and repairs the interface between the active channel and the passivation or etch stop layers.
摘要翻译：本发明总体上涉及一种制造TFT的方法。 TFT具有包含IGZO或氧化锌的有源沟道。在形成源电极和漏电极之后，但是在其上沉积钝化层或蚀刻停止层之前，将活性通道暴露于N 2 O或O 2等离子体。在形成源电极和漏电极期间，有源沟道与钝化层或蚀刻停止层之间的界面或者被改变或者被损坏。 N 2 O或O 2等离子体改变并修复有源沟道和钝化层或蚀刻停止层之间的界面。

3. 发明申请

WO2012109038A3 METHOD FOR HYBRID ENCAPSULATION OF AN ORGANIC LIGHT EMITTING DIODE 审中-公开
公开(公告)号：WO2012109038A3
公开(公告)日：2012-08-16
申请号：PCT/US2012/023129
申请日：2012-01-30
申请人： APPLIED MATERIALS, INC. , CHEN, Jrjyan Jerry , CHOI, Soo Young
发明人： CHEN, Jrjyan Jerry , CHOI, Soo Young
IPC分类号： H01L51/50 , H05B33/04 , H05B33/10
摘要： Methods and apparatus for encapsulating organic light emitting diode (OLED) structures disposed on a substrate using a hybrid layer of material are provided. The processing parameters used during deposition of the hybrid layer of material allow control of the characteristics of the deposited hybrid layer. The hybrid layer may be deposited such that the layer has characteristics of an inorganic material in some sublayers of the hybrid layer and characteristics of an organic material in other sublayers of the hybrid layer. Use of the hybrid material allows OLED encapsulation using a single hard mask for the complete encapsulating process with low cost and without alignment issues present in conventional processes.

4. 发明申请

WO2021173309A1 PROCESSES FOR IMPROVING THIN-FILM ENCAPSULATION 审中-公开
公开(公告)号：WO2021173309A1
公开(公告)日：2021-09-02
申请号：PCT/US2021/016243
申请日：2021-02-02
申请人： APPLIED MATERIALS, INC.
发明人： WU, Wen-Hao , CHEN, Jrjyan Jerry
IPC分类号： H01L51/56 , H01L51/52
摘要： A method and apparatus for forming an encapsulation layer on an organic light emitting diode (OLED) patterned substrate are described. A sidewall planarization layer fills voids in a scalloped sidewall of a wall feature on the OLED patterned substrate. The sidewall planarization layer is cured in the same chamber as the deposition of the sidewall planarization layer. A barrier layer is formed on the sidewall planarization layer. The sidewall planarization layer provides a planarized surface for good adhesion of the barrier layer over the sidewall planarization layer which minimizes the possibility of defects to the OLED patterned substrate from moisture of oxygen penetrating the OLED patterned substrate.

5. 发明申请

WO2019133509A2 METHOD OF REDUCING LEAKAGE CURRENT OF STORAGE CAPACITORS FOR DISPLAY APPLICATIONS 审中-公开
公开(公告)号：WO2019133509A2
公开(公告)日：2019-07-04
申请号：PCT/US2018/067223
申请日：2018-12-21
申请人： APPLIED MATERIALS, INC.
发明人： ZHAI, Yujia , RUI, Xiangxin , ZHAO, Lai , CHOI, Soo Young , CHEN, Jrjyan Jerry
摘要： Embodiments of the present disclosure generally relate to a method for forming a metal-insulator-metal (MIM) capacitor for display applications. The method includes forming a metal electrode over a substrate, and exposing the metal electrode to a nitrogen containing plasma in a processing chamber. The substrate is maintained at a temperature ranging from about 20 degrees Celsius to about 200 degrees Celsius as the metal electrode is exposed to the nitrogen containing plasma, which converts a surface of the metal electrode to a nitride. The method further includes forming a high K dielectric layer on the nitride surface of the metal electrode in the same processing chamber. With the plasma treating of the metal electrode, leakage current of the MIM capacitor is reduced and the breakdown field of the MIM capacitor is improved.

6. 发明申请

WO2014163773A1 PLASMA CURING OF PECVD HMDSO FILM FOR OLED APPLICATIONS 审中-公开
标题翻译：用于OLED应用的PECVD HMDSO膜的等离子体固化
公开(公告)号：WO2014163773A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/016103
申请日：2014-02-12
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Jrjyan Jerry , CHOI, Soo Young
IPC分类号： H01L51/56 , H05B33/10
CPC分类号： H01L51/56 , C09D183/04 , C23C16/401 , C23C16/50 , C23C16/56 , H01L51/0034 , H01L51/5256
摘要： Methods for forming an OLED device are described. An encapsulation layer having a buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is deposited on the first barrier layer and is cured with a fluorine-containing plasma at a temperature less than 100 degrees Celsius. The second barrier layer is then deposited on the buffer layer.
摘要翻译：描述用于形成OLED器件的方法。具有夹在阻挡层之间的缓冲层的封装层沉积在OLED结构上。缓冲层沉积在第一阻挡层上，并在低于100摄氏度的温度下用含氟等离子体固化。然后将第二阻挡层沉积在缓冲层上。

7. 发明申请

WO2020163060A1 SUBSTRATE SUPPORT FOR CHUCKING OF MASK FOR DEPOSITION PROCESSES 审中-公开
公开(公告)号：WO2020163060A1
公开(公告)日：2020-08-13
申请号：PCT/US2020/014061
申请日：2020-01-17
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Jrjyan Jerry , YADAV, Sanjay D. , WON, Tae Kyung , LI, Jun , SHAO, Shouqian , SETTY, Surendra Kanimihally
IPC分类号： H01L21/687 , H01L21/683 , C23C16/458 , H02N13/00 , B23Q3/15 , H01L21/56
摘要： Embodiments of the disclosure include methods and apparatus for electrostatically coupling a mask to a substrate support in a deposition chamber. In one embodiment, a substrate support is disclosed that includes a substrate receiving surface, a recessed portion disposed about a periphery of the substrate receiving surface, an electrostatic chuck disposed below the substrate receiving surface, and a plurality of compressible buttons disposed within a respective opening formed in the recessed portion that form an electrical circuit with the electrostatic chuck.

8. 发明申请

WO2020149898A1 METHODS FOR HMDSO THERMAL STABILITY 审中-公开
公开(公告)号：WO2020149898A1
公开(公告)日：2020-07-23
申请号：PCT/US2019/054124
申请日：2019-10-01
申请人： APPLIED MATERIALS, INC.
发明人： WU, Wen-Hao , CHEN, Jrjyan Jerry
IPC分类号： H01L51/00 , H01L51/56
摘要： Embodiments of the present disclosure generally relate to methods for forming an organic light emitting diode (OLED) device. Forming the OLED device comprises depositing a first barrier layer on a substrate having an OLED structure disposed thereon. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer comprises generating water from the mixed gas plasma in a process chamber in which the curing occurs. The deposition of the first sublayer and the curing of the first sublayer is repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.

9. 发明申请

WO2019133509A3 METHOD OF REDUCING LEAKAGE CURRENT OF STORAGE CAPACITORS FOR DISPLAY APPLICATIONS 审中-公开
公开(公告)号：WO2019133509A3
公开(公告)日：2019-07-04
申请号：PCT/US2018/067223
申请日：2018-12-21
申请人： APPLIED MATERIALS, INC.
发明人： ZHAI, Yujia , RUI, Xiangxin , ZHAO, Lai , CHOI, Soo Young , CHEN, Jrjyan Jerry
IPC分类号： H01L49/02 , H01L21/02
摘要： Embodiments of the present disclosure generally relate to a method for forming a metal-insulator-metal (MIM) capacitor for display applications. The method includes forming a metal electrode over a substrate, and exposing the metal electrode to a nitrogen containing plasma in a processing chamber. The substrate is maintained at a temperature ranging from about 20 degrees Celsius to about 200 degrees Celsius as the metal electrode is exposed to the nitrogen containing plasma, which converts a surface of the metal electrode to a nitride. The method further includes forming a high K dielectric layer on the nitride surface of the metal electrode in the same processing chamber. With the plasma treating of the metal electrode, leakage current of the MIM capacitor is reduced and the breakdown field of the MIM capacitor is improved.

10. 发明申请

WO2018017360A2 HIGH-K DIELECTRIC MATERIALS COMPRISING ZIRCONIUM OXIDE UTILIZED IN DISPLAY DEVICES 审中-公开
标题翻译：包含氧化锆的高K电介质材料用于显示装置中
公开(公告)号：WO2018017360A2
公开(公告)日：2018-01-25
申请号：PCT/US2017/041555
申请日：2017-07-11
申请人： APPLIED MATERIALS, INC.
发明人： RUI, Xiangxin , ZHAO, Lai , CHEN, Jrjyan Jerry , CHOI, Soo Young , ZHAI, Yujia
CPC分类号： H01L27/1255 , H01L27/1248 , H01L27/1259 , H01L29/4908
摘要： Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.
摘要翻译：本公开的实施例大体上提供了形成具有高介电常数以及用于显示器应用的低薄膜电流泄漏和期望的薄膜质量的电容器层或栅极绝缘层的方法。在一个实施例中，薄膜晶体管结构包括形成在衬底上的介电层，其中介电层是包含铝的含锆材料，以及形成在衬底上的栅极，源极和漏极，其中栅极，源极和漏极形成在介质层之上或之下。

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