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1. 发明申请

WO2019014446A1 METHODS AND APPARATUS FOR DEPOSITING TUNGSTEN NUCLEATION LAYERS 审中-公开
公开(公告)号：WO2019014446A1
公开(公告)日：2019-01-17
申请号：PCT/US2018/041823
申请日：2018-07-12
申请人： APPLIED MATERIALS, INC.
发明人： WU, Kai , YU, Sang Ho , BANTHIA, Vikash
IPC分类号： H01L21/285 , H01L21/02 , H01L21/324 , C23C16/455 , H01L21/67
摘要： Methods of depositing low resistivity tungsten nucleation layers using alkyl borane reducing agents are described. Alkyl borane reducing agents utilized include compounds with the general formula BR3, where R is a C1-C6 alkyl group. Apparatus for performing atomic layer deposition of tungsten nucleation layers using alkyl borane reducing agents are also described.

2. 发明申请

WO2011139642A2 NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS 审中-公开
标题翻译： NMOS金属栅材料，制造方法和使用基于金属的前驱体的CVD和ALD工艺的设备
公开(公告)号：WO2011139642A2
公开(公告)日：2011-11-10
申请号：PCT/US2011/033820
申请日：2011-04-25
申请人： APPLIED MATERIALS, INC. , GANGULI, Seshadri , GANDIKOTA, Srinivas , LEI, Yu , LU, Xinliang , YU, Sang Ho , KIM, Hoon , MA, Paul, F. , CHANG, Mei , MAHAJANI, Maitreyee , LIU, Patricia, M.
发明人： GANGULI, Seshadri , GANDIKOTA, Srinivas , LEI, Yu , LU, Xinliang , YU, Sang Ho , KIM, Hoon , MA, Paul, F. , CHANG, Mei , MAHAJANI, Maitreyee , LIU, Patricia, M.
IPC分类号： H01L21/31 , H01L21/336 , H01L29/78 , H01L21/205
CPC分类号： H01L21/28008 , C23C16/06 , C23C16/32 , C23C16/42 , C23C16/45542 , H01L21/28079 , H01L21/28088 , H01L21/28097 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/823814 , H01L21/823842 , H01L29/495 , H01L29/4966
摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX Y , wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
摘要翻译：本发明的实施方案通常提供沉积含金属材料及其组合物的方法。所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

3. 发明申请

WO2018098027A1 SELECTIVE DEPOSITION OF ALUMINUM OXIDE ON METAL SURFACES 审中-公开
公开(公告)号：WO2018098027A1
公开(公告)日：2018-05-31
申请号：PCT/US2017/062160
申请日：2017-11-17
申请人： APPLIED MATERIALS, INC.
发明人： YU, Sang Ho , GANGULI, Seshadri
IPC分类号： H01L21/02
摘要： Processing methods for depositing aluminum etch stop layers comprise positioning a substrate within a processing chamber, wherein the substrate comprises a metal surface and a dielectric surface; exposing the substrate to an aluminum precursor gas comprising an isopropoxide based aluminum precursor to selectively form an aluminum oxide (AlOx) etch stop layer onto the metal surface while leaving exposed the dielectric surface during a chemical vapor deposition process. The metal surfaces may be copper, cobalt, or tungsten.

4. 发明申请

WO2015047731A1 METHOD OF ENABLING SEAMLESS COBALT GAP-FILL 审中-公开
标题翻译：实现无缝煤覆盖的方法
公开(公告)号：WO2015047731A1
公开(公告)日：2015-04-02
申请号：PCT/US2014/054989
申请日：2014-09-10
申请人： APPLIED MATERIALS, INC.
发明人： ZOPE, Bhushan N. , GELATOS, Avgerinos V. , ZHENG, Bo , LEI, Yu , FU, Xinyu , GANDIKOTA, Srinivas , YU, Sang Ho , ABRAHAM, Mathew
IPC分类号： H01L21/205
CPC分类号： H01L21/76877 , C23C16/18 , H01L21/2855 , H01L21/28562 , H01L21/28568 , H01L21/76814 , H01L21/76843 , H01L21/76876 , H01L21/76879 , H01L21/76883
摘要： Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.
摘要翻译：提供了在半导体器件的特征定义中沉积金属层的方法。在一个实施方案中，提供了一种用于沉积用于形成半导体器件的金属层的方法。该方法包括进行循环金属沉积工艺以将金属层沉积在衬底上并使设置在衬底上的金属层退火。循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将金属层的一部分沉积在衬底上，将金属层的一部分暴露于等离子体处理工艺或氢退火工艺中，并重复暴露衬底到沉积前体气体混合物并将金属层的该部分暴露于等离子体处理工艺或氢气退火工艺中，直到达到金属层的预定厚度。

5. 发明申请

WO2014058536A1 TUNGSTEN GROWTH MODULATION BY CONTROLLING SURFACE COMPOSITION 审中-公开
标题翻译：通过控制表面组成调节生长调节
公开(公告)号：WO2014058536A1
公开(公告)日：2014-04-17
申请号：PCT/US2013/055833
申请日：2013-08-20
申请人： APPLIED MATERIALS, INC.
发明人： WU, Kai , PARK, Kie Jin , YU, Sang Ho , LEE, Sang-Hyeob , DAITO, Kazuya , COLLINS, Joshua , WANG, Benjamin C.
IPC分类号： H01L21/205 , H01L21/20
CPC分类号： C23C16/452 , C23C16/08 , C23C16/50
摘要： A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.
摘要翻译：本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

6. 发明申请

WO2013086087A1 CHEMICAL VAPOR DEPOSITION (CVD) OF RUTHENIUM FILMS AND APPLICATIONS FOR SAME 审中-公开
标题翻译： RUMEN膜的化学气相沉积（CVD）及其应用
公开(公告)号：WO2013086087A1
公开(公告)日：2013-06-13
申请号：PCT/US2012/068098
申请日：2012-12-06
申请人： APPLIED MATERIALS, INC.
发明人： KIM, Hoon , LEE, Sang Hyeob , LEE, Wei Ti , GANGULI, Seshadri , HA, Hyoung-Chan , YU, Sang Ho
IPC分类号： C23C16/44 , C23C16/06
CPC分类号： C23C16/18 , C23C16/40 , C23C16/56 , C23C28/02 , C23C28/023
摘要： Methods for depositing ruthenium-containing films are disclosed herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing layer to a hydrogen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the hydrogen-containing gas exposed ruthenium-containing film may be subsequently exposed to an oxygen-containing gas to at least one of remove at least some carbon from or add oxygen to the ruthenium-containing film. In some embodiments, the deposition and exposure to the hydrogen-containing gas and optionally, the oxygen-containing gas may be repeated to deposit the ruthenium-containing film to a desired thickness.
摘要翻译：本文公开了沉积含钌膜的方法。在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上，并将沉积的含钌层暴露于含氢气体中以从沉积的含钌膜中除去至少一些碳。在一些实施方案中，暴露含钌的含氟膜的膜随后可以暴露于含氧气体中至少一种，以将至少一些碳从氧钌中除去或添加至含钌膜。在一些实施方案中，可以重复沉积和暴露于含氢气体和任选地含氧气体，以将含钌膜沉积到所需厚度。

7. 发明申请

WO2020076710A1 METHODS AND APPARATUS FOR N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) METAL GATE MATERIALS USING ATOMIC LAYER DEPOSITION (ALD) PROCESSES WITH METAL BASED PRECURSORS 审中-公开
公开(公告)号：WO2020076710A1
公开(公告)日：2020-04-16
申请号：PCT/US2019/055014
申请日：2019-10-07
申请人： APPLIED MATERIALS, INC.
发明人： LIN, Yongjing , CHEN, Shih Chung , YOSHIDA, Naomi , DONG, Lin , WU, Liqi , WANG, Rongjun , HUNG, Steven , BERNAL RAMOS, Karla , YANG, Yixiong , TANG, Wei , YU, Sang Ho
IPC分类号： H01L21/02 , H01L21/28 , H01L21/324
摘要： Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

8. 发明申请

WO2019246500A1 CATALYZED DEPOSITION OF METAL FILMS 审中-公开
公开(公告)号：WO2019246500A1
公开(公告)日：2019-12-26
申请号：PCT/US2019/038434
申请日：2019-06-21
申请人： APPLIED MATERIALS, INC.
发明人： YU, Sang Ho , GANGULI, Seshadri , YOON, Byunghoon , CHEN, Wei Min
IPC分类号： H01L21/28 , H01L21/285 , H01L21/02 , C23C16/44 , H01L21/324
摘要： Methods of depositing a metal film with high purity are discussed. Some embodiments utilize a thermal ALD process comprising an alkyl halide and a metal precursor. Some embodiments selectively deposit a metal film with high purity on a metal surface over a dielectric surface. Some embodiments selectively deposit a metal film with high purity on a dielectric surface over a metal surface. Some embodiments deposit a metal film with greater than 99% metal atoms on an atomic basis.

9. 发明申请

WO2015105953A1 COBALT MANGANESE VAPOR PHASE DEPOSITION 审中-公开
标题翻译：碳酸锰蒸汽相沉积
公开(公告)号：WO2015105953A1
公开(公告)日：2015-07-16
申请号：PCT/US2015/010592
申请日：2015-01-08
申请人： APPLIED MATERIALS, INC.
发明人： YU, Sang Ho , MA, Paul F. , LU, Jiang , SHEU, Ben-Li
IPC分类号： H01L21/3205 , H01L21/28
CPC分类号： H01L23/53238 , C23C16/34 , C23C16/45536 , H01L21/28562 , H01L21/76843 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.
摘要翻译：描述了制造具有包含钴和氮化锰的阻挡层的半导体器件的半导体器件和方法。还描述了与包括CoMn（N）和任选的粘合层的阻挡层相同的半导体器件和方法。

10. 发明申请

WO2015023404A1 TUNGSTEN DEPOSITION WITH TUNGSTEN HEXAFLUORIDE (WF6) ETCHBACK 审中-公开
标题翻译： TUNGSTEN沉积与TUNGSTEN十六氟醚（WF6）ETCHBACK
公开(公告)号：WO2015023404A1
公开(公告)日：2015-02-19
申请号：PCT/US2014/047618
申请日：2014-07-22
申请人： APPLIED MATERIALS, INC.
发明人： WU, Kai , YU, Sang Ho
IPC分类号： H01L21/283 , H01L21/205
CPC分类号： H01L21/28556 , C23C16/045 , C23C16/14 , H01L21/32136 , H01L21/76877
摘要： Implementations described herein generally relate to methods for forming tungsten materials on substrates using vapor deposition processes. The method comprises positioning a substrate having a feature formed therein in a substrate processing chamber, depositing a first film of a bulk tungsten layer by introducing a continuous flow of a hydrogen containing gas and a tungsten halide compound to the processing chamber to deposit the first tungsten film over the feature, etching the first film of the bulk tungsten layer using a plasma treatment to remove a portion of the first film by exposing the first film to a continuous flow of the tungsten halide compound and an activated treatment gas and depositing a second film of the bulk tungsten layer by introducing a continuous flow of the hydrogen containing gas and the tungsten halide compound to the processing chamber to deposit the second tungsten film over the first tungsten film.
摘要翻译：本文描述的实施方案通常涉及使用气相沉积工艺在基底上形成钨材料的方法。该方法包括将具有形成在其中的特征的基板定位在基板处理室中，通过将含氢气体和卤化钨化合物的连续流引入到处理室中沉积第一钨沉积第一钨体层，通过使用等离子体处理来蚀刻体钨层的第一膜，以通过将第一膜暴露于卤化钨化合物和活性处理气体的连续流动并沉积第二膜来去除一部分第一膜通过将含氢气体和卤化钨化合物的连续流引入处理室以将第二钨膜沉积在第一钨膜上。

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