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    • 2. 发明申请
    • TUNGSTEN GROWTH MODULATION BY CONTROLLING SURFACE COMPOSITION
    • 通过控制表面组成调节生长调节
    • WO2014058536A1
    • 2014-04-17
    • PCT/US2013/055833
    • 2013-08-20
    • APPLIED MATERIALS, INC.
    • WU, KaiPARK, Kie JinYU, Sang HoLEE, Sang-HyeobDAITO, KazuyaCOLLINS, JoshuaWANG, Benjamin C.
    • H01L21/205H01L21/20
    • C23C16/452C23C16/08C23C16/50
    • A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.
    • 本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。 该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中,将包含钨的第一成核层保形地沉积在衬底的暴露表面上,用活性氮处理至少一部分第一成核层,其中 将活化的氮优选沉积在表面区域上,使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应,使包含卤化钨的成核气体反应形成第二 使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。