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1. 发明申请

WO2020060721A1 SELECTIVE MATERIAL REMOVAL 审中-公开
公开(公告)号：WO2020060721A1
公开(公告)日：2020-03-26
申请号：PCT/US2019/048076
申请日：2019-08-26
申请人： APPLIED MATERIALS, INC.
发明人： XIA, Ming , YANG, Dongqing , HSU, Ching-Mei
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/02 , H01L21/324 , H01L21/67
摘要： Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.

2. 发明申请

WO2019161265A1 AIRGAP FORMATION PROCESSES 审中-公开
公开(公告)号：WO2019161265A1
公开(公告)日：2019-08-22
申请号：PCT/US2019/018301
申请日：2019-02-15
申请人： APPLIED MATERIALS, INC.
发明人： PAL, Ashish , THAREJA, Gaurav , LIN, San Kuei , WANG, Anchuan , HSU, Ching-Mei , INGLE, Nitin , BHATNAGAR, Ajay
IPC分类号： H01L29/06 , H01L21/768 , H01L21/8234
摘要： Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.

3. 发明申请

WO2014149862A1 PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING 审中-公开
标题翻译：加工系统和方法
公开(公告)号：WO2014149862A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/021246
申请日：2014-03-06
申请人： APPLIED MATERIALS, INC.
发明人： WANG, Anchuan , CHEN, Xinglong , LI, Zihui , HAMANA, Hiroshi , CHEN, Zhijun , HSU, Ching-Mei , HUANG, Jiayin , INGLE, Nitin K. , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar , THAKUR, Randhir
IPC分类号： H01L21/02
CPC分类号： H01L21/324 , C23C16/4405 , H01J37/32357 , H01J37/32862 , H01L21/02041 , H01L21/02057 , H01L21/0206 , H01L21/263 , H01L21/2686 , H01L21/30604 , H01L21/3065 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/67069 , H01L21/67075 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67248 , H01L21/67253 , H01L21/67288 , H01L21/67703 , H01L21/67739 , H01L21/67742 , H01L21/6831
摘要： Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.
摘要翻译：提供系统，室和过程以控制由水分污染引起的过程缺陷。这些系统可以提供腔室的配置，以在真空或受控环境中执行多个操作。腔室可以包括在组合腔室设计中提供附加处理能力的构造。这些方法可以提供由系统工具执行的蚀刻工艺可能引起的老化缺陷的限制，预防和校正。

4. 发明申请

WO2014113177A1 DRY-ETCH FOR SELECTIVE TUNGSTEN REMOVAL 审中-公开
标题翻译：干燥剂用于选择性去除钨粉
公开(公告)号：WO2014113177A1
公开(公告)日：2014-07-24
申请号：PCT/US2013/076217
申请日：2013-12-18
申请人： APPLIED MATERIALS, INC.
发明人： WANG, Xikun , HSU, Ching-Mei , INGLE, Nitin K. , LI, Zihui , WANG, Anchuan
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , C23C16/0245 , H01J37/32357 , H01J2237/334 , H01L21/02046 , H01L21/02068 , H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L21/32136 , H01L21/76814
摘要： Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.
摘要翻译：描述了相对于含硅膜（例如氧化硅，氮化碳和（多）硅）选择性地蚀刻钨的方法以及氧化钨。这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。等离子体流出物与暴露的表面反应并选择性地去除钨，同时非常缓慢地除去其它暴露的材料。包括顺序和同时的方法以除去例如由于暴露于大气中而产生的薄氧化钨。

5. 发明申请

WO2014099260A1 SELECTIVE TITANIUM NITRIDE ETCHING 审中-公开
标题翻译：选择性硝酸铁蚀刻
公开(公告)号：WO2014099260A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/071417
申请日：2013-11-22
申请人： APPLIED MATERIALS, INC.
发明人： LIU, Jie , ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin K. , PARK, Seung , CHEN, Zhijun , HSU, Ching-Mei
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , H01J37/32357
摘要： Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.
摘要翻译：描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

6. 发明申请

WO2014046845A1 RADICAL-COMPONENT OXIDE ETCH 审中-公开
标题翻译：放射性组分氧化物蚀刻
公开(公告)号：WO2014046845A1
公开(公告)日：2014-03-27
申请号：PCT/US2013/056636
申请日：2013-08-26
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Zhijun , ZHANG, Jingchun , HSU, Ching-Mei , PARK, Seung , WANG, Anchuan , INGLE, Nitin K.
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi TM processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.
摘要翻译：描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氮和氢的前体结合。因此，与典型的SiconiTM工艺相比，反应物产生的蚀刻具有高氧化硅选择性的图案化异质结构，同时衬底处于高温。蚀刻进行而不会在基板表面上产生残留物。该方法可以用于去除硅或氧化硅，同时除去硅或多晶硅，氮化硅或氮化钛。

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