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1. 发明申请

WO2019161265A1 AIRGAP FORMATION PROCESSES 审中-公开
公开(公告)号：WO2019161265A1
公开(公告)日：2019-08-22
申请号：PCT/US2019/018301
申请日：2019-02-15
申请人： APPLIED MATERIALS, INC.
发明人： PAL, Ashish , THAREJA, Gaurav , LIN, San Kuei , WANG, Anchuan , HSU, Ching-Mei , INGLE, Nitin , BHATNAGAR, Ajay
IPC分类号： H01L29/06 , H01L21/768 , H01L21/8234
摘要： Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.

2. 发明申请

WO2015073188A1 METHOD OF DEPOSITING A LOW-TEMPERATURE, NO-DAMAGE HDP SIC-LIKE FILM WITH HIGH WET ETCH RESISTANCE 审中-公开
标题翻译：沉积具有高耐蚀性的低温，无损伤HDP SIC膜的方法
公开(公告)号：WO2015073188A1
公开(公告)日：2015-05-21
申请号：PCT/US2014/062212
申请日：2014-10-24
申请人： APPLIED MATERIALS, INC.
发明人： THADANI, Kiran V. , MALLICK, Abhijit Basu , INGLE, Nitin
IPC分类号： H01L21/306 , H01L21/31
CPC分类号： H01L21/02219 , C23C16/36 , C23C16/56 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/67742
摘要： Embodiments of the invention generally relate to methods of forming an etch resistant silicon-carbon-nitrogen layer. The methods generally include activating a silicon-containing precursor and a nitrogen-containing precursor in the processing region of a processing chamber in the presence of a plasma and depositing a thin flowable silicon-carbon-nitrogen material on a substrate using the activated silicon-containing precursor and a nitrogen-containing precursor. The thin flowable silicon-carbon-nitrogen material is subsequently cured using one of a variety of curing techniques. A plurality of thin flowable silicon-carbon-nitrogen material layers are deposited sequentially to create the final layer.
摘要翻译：本发明的实施方案一般涉及形成耐蚀刻硅 - 碳 - 氮层的方法。所述方法通常包括在存在等离子体的情况下在处理室的处理区域中活化含硅前体和含氮前体，并使用活化的含硅物质在衬底上沉积薄的可流动的硅 - 碳 - 氮材料前体和含氮前体。随后使用各种固化技术之一固化薄的可流动的硅 - 碳 - 氮材料。顺序沉积多个薄的可流动的硅 - 碳 - 氮材料层以产生最终层。

3. 发明申请

WO2012106033A2 UNIFORM DRY ETCH IN TWO STAGES 审中-公开
标题翻译：两阶段均匀干燥
公开(公告)号：WO2012106033A2
公开(公告)日：2012-08-09
申请号：PCT/US2011/064724
申请日：2011-12-13
申请人： APPLIED MATERIALS, INC. , YANG, Dongqing , TANG, Jing , INGLE, Nitin
发明人： YANG, Dongqing , TANG, Jing , INGLE, Nitin
CPC分类号： H01L21/31116
摘要： A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.
摘要翻译：描述了从多个沟槽蚀刻氧化硅的方法，其允许沟槽之间更均匀的蚀刻速率。蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更平滑。该方法包括两个干蚀刻阶段，接着是升华步骤。第一次干蚀刻阶段快速去除氧化硅并产生大的固体残渣颗粒。第二干蚀刻步骤缓慢除去氧化硅，并在大的固体残渣颗粒中产生小的固体残渣颗粒。在随后的升华步骤中，小和大的固体残余物都被去除。两个干蚀刻阶段之间没有升华步骤。

4. 发明申请

WO2018222403A3 WATER-FREE ETCHING METHODS 审中-公开
公开(公告)号：WO2018222403A3
公开(公告)日：2018-12-06
申请号：PCT/US2018/033176
申请日：2018-05-17
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Zhijun , XU, Lin , WANG, Anchuan , INGLE, Nitin
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/02
摘要： Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide and a region of exposed metal. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide.

5. 发明申请

WO2012125656A2 METHODS FOR ETCH OF SIN FILMS 审中-公开
标题翻译：用于蚀刻SIN膜的方法
公开(公告)号：WO2012125656A2
公开(公告)日：2012-09-20
申请号：PCT/US2012/028957
申请日：2012-03-13
申请人： APPLIED MATERIALS, INC. , ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin
发明人： ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin
IPC分类号： H01L21/3065 , H01L21/318
CPC分类号： H01L21/31116 , C09K13/00 , H01J37/32357 , H01J37/32422 , H01L21/02164 , H01L21/0217 , H01L21/3065 , H01L21/311 , H01L21/32135 , H01L21/32136 , H01L21/32137 , H01L21/67069
摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包括氮化硅层和氧化硅层的衬底选择性地蚀刻氮化硅的方法包括：使含氟气体流入衬底处理室的等离子体产生区域，并且将能量施加到在等离子体产生区域中产生等离子体的含氟气体。等离子体包含氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应性气体并且使反应性气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体蚀刻氧化硅层更高的蚀刻速率蚀刻氮化硅层。

6. 发明申请

WO2011025655A2 SILICON-SELECTIVE DRY ETCH FOR CARBON-CONTAINING FILMS 审中-公开
标题翻译：用于含碳膜的硅选择性干法蚀刻
公开(公告)号：WO2011025655A2
公开(公告)日：2011-03-03
申请号：PCT/US2010/045056
申请日：2010-08-10
申请人： APPLIED MATERIALS, INC. , SAPRE, Kedar , TANG, Jing , WANG, Linlin , MALLICK, Abhijit Basu , INGLE, Nitin
发明人： SAPRE, Kedar , TANG, Jing , WANG, Linlin , MALLICK, Abhijit Basu , INGLE, Nitin
IPC分类号： H01L21/3065 , G03F7/42 , B44C1/22
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching silicon-and-carbon-containing material is described and includes a SiConi TM etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi TM etch reducing the carbon content in the near surface region and allowing the SiConi TM etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi TM etch further improving the effective etch rate.
摘要翻译：描述了一种蚀刻含硅和碳材料的方法，其包括SiConi TM蚀刻与活性氧流的组合。在SiConi TM蚀刻降低近表面区域中的碳含量并允许SiConi TM蚀刻更快进行之前可引入活性氧。或者，可以在SiConi TM蚀刻期间引入活性氧，从而进一步提高有效蚀刻速率。

7. 发明申请

WO2018067881A1 SELECTIVE SIN LATERAL RECESS 审中-公开
标题翻译：选择性的真正内侧压力
公开(公告)号：WO2018067881A1
公开(公告)日：2018-04-12
申请号：PCT/US2017/055431
申请日：2017-10-05
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Zhijun , HUANG, Jiayin , WANG, Anchuan , INGLE, Nitin
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/311 , H01L21/02
摘要： Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench while substantially maintaining the layers of silicon oxide. The layers of silicon nitride may be laterally etched less than 10 nm from the sidewalls of the trench.
摘要翻译：用于横向蚀刻氮化硅的示例性方法可以包括使含氟前体和含氧前体流入半导体处理室的远程等离子体区域。该方法可以包括在远程等离子体区域内形成等离子体以产生含氟前体和含氧前体的等离子体流出物。该方法还可以包括使等离子体流出物流入半导体处理室的处理区域。衬底可以定位在处理区域内，并且衬底可以包括通过堆叠层形成的沟槽，堆叠层包括氮化硅和氧化硅的交替层。该方法还可以包括在基本上保持氧化硅层的同时从沟槽的侧壁横向蚀刻氮化硅层。氮化硅层可以从沟槽的侧壁横向刻蚀小于10nm。

8. 发明申请

WO2014130304A1 HDD PATTERNING USING FLOWABLE CVD FILM 审中-公开
标题翻译：使用流动CVD薄膜的HDD模式
公开(公告)号：WO2014130304A1
公开(公告)日：2014-08-28
申请号：PCT/US2014/015877
申请日：2014-02-11
申请人： APPLIED MATERIALS, INC.
发明人： UNDERWOOD, Brian Saxton , MALLICK, Abhijit Basu , INGLE, Nitin , GOUK, Roman , VERHAVERBEKE, Steven
IPC分类号： C23C16/44 , C23C16/56
CPC分类号： G11B5/85 , G11B5/855
摘要： Method and apparatus for forming a patterned magnetic substrate are provided. A patterned resist is formed on a magnetically active surface of a substrate. An an oxide layer is formed over the patterned resist by a flowable CVD process. The oxide layer is etched to expose portions of the patterned resist. The patterned resist is then etched, using the etched oxide layer as a mask, to expose portions of the magnetically active surface. A magnetic property of the exposed portions of the magnetically active surface is then modified by directing energy through the etched resist layer and the etched oxide layer, which are subsequently removed from the substrate.
摘要翻译：提供了用于形成图案化磁性基底的方法和装置。在基板的磁性活性表面上形成图案化的抗蚀剂。通过可流动CVD工艺在图案化的抗蚀剂上形成氧化物层。蚀刻氧化物层以暴露图案化抗蚀剂的部分。然后使用蚀刻的氧化物层作为掩模蚀刻图案化的抗蚀剂，以暴露磁性活性表面的部分。然后通过将能量引导通过经蚀刻的抗蚀剂层和经蚀刻的氧化物层（随后从衬底去除）来改变磁性活性表面的暴露部分的磁性。

9. 发明申请

WO2013032873A1 DOUBLE PATTERNING ETCHING PROCESS 审中-公开
标题翻译：双重图案蚀刻过程
公开(公告)号：WO2013032873A1
公开(公告)日：2013-03-07
申请号：PCT/US2012/052171
申请日：2012-08-23
申请人： APPLIED MATERIALS, INC. , SAPRE, Kedar , TANG, Jing , BHATNAGAR, Ajay , INGLE, Nitin , VENKATARAMAN, Shankar
发明人： SAPRE, Kedar , TANG, Jing , BHATNAGAR, Ajay , INGLE, Nitin , VENKATARAMAN, Shankar
IPC分类号： H01L21/027
CPC分类号： H01L21/31144 , H01J37/32357 , H01J2237/334 , H01L21/0274 , H01L21/0337 , H01L21/3086 , H01L21/31116
摘要： A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100 C.
摘要翻译：蚀刻衬底的方法包括在衬底上形成由氧化硅，氮化硅或氮氧化硅组成的多个双重构图特征。具有双重图案化特征的基板被提供到处理区域。包括三氟化氮，氨和氢的蚀刻气体在远程室中通电。通电的蚀刻气体被引入到工艺区中以蚀刻双重图案化特征以在衬底上形成固体残余物。固体残余物通过将基底加热至至少约100℃的温度升华。

10. 发明申请

WO2005033361A1 GAS DISTRIBUTION SHOWERHEAD 审中-公开
标题翻译：气体分配淋浴
公开(公告)号：WO2005033361A1
公开(公告)日：2005-04-14
申请号：PCT/US2004/031424
申请日：2004-09-24
申请人： APPLIED MATERIALS, INC. , JANAKIRAMAN, Karthik , INGLE, Nitin , YUAN, Zheng , GIANOULAKIS, Steven
发明人： JANAKIRAMAN, Karthik , INGLE, Nitin , YUAN, Zheng , GIANOULAKIS, Steven
IPC分类号： C23C16/455
CPC分类号： C23C16/455 , C23C16/45565
摘要： A gas distribution showerhead (1501) is designed to allow deposition of uniformly thick films over a wide range of showerhead-to-wafer spacings (y). In accordance with one embodiment of the present invention, the number, width, and/or depth of orifices inlet (1501a) to the faceplate are reduced in order to increase flow resistance and thereby elevate pressure upstream of the faceplate. This elevated upstream gas flow pressure in turn reduces variation in the velocity of gas flowed through center portions of the showerhead relative to edge portions, thereby ensuring uniformity in thickness of film deposited on the edge or center portions of the wafer.
摘要翻译：气体分配喷头（1501）被设计成允许在宽范围的淋浴头到晶片间隔（y）上沉积均匀的厚膜。根据本发明的一个实施例，面板的孔口入口（1501a）的数量，宽度和/或深度减小，以增加流动阻力，从而提高面板上游的压力。这种升高的上游气体流量压力又降低了通过喷头的中心部分相对于边缘部分流动的气体的速度变化，从而确保沉积在晶片的边缘或中心部分上的膜的厚度均匀。

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