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1. 发明申请

WO2014074461A1 DRY ETCH PROCESS 审中-公开
标题翻译：干蚀工艺
公开(公告)号：WO2014074461A1
公开(公告)日：2014-05-15
申请号：PCT/US2013/068337
申请日：2013-11-04
申请人： APPLIED MATERIALS, INC.
发明人： ZHANG, Jingchun , INGLE, Nitin K. , WANG, Anchuan
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357 , H01J2237/3347 , H01L21/3065 , H01L21/31122 , H01L21/32136 , H01L21/32137
摘要： A method for conformal dry etch of a liner material in a high aspect ratio trench is achieved by depositing or forming an inhomogeneous passivation layer which is thicker near the opening of a trench but thinner deep within the trench. The methods described herein use a selective etch following formation of the inhomogeneous passivation layer. The selective etch etches liner material faster than the passivation material. The inhomogeneous passivation layer suppresses the etch rate of the selective etch near the top of the trench (where it would otherwise be fastest) and gives the etch a head start deeper in the trench (where it would otherwise be slowest). This method may also find utility in removing bulk material uniformly from within a trench.
摘要翻译：通过沉积或形成非常均匀的钝化层来实现在高纵横比沟槽中衬垫材料的保形干蚀刻的方法，所述不均匀钝化层在沟槽的开口附近较厚，而在沟槽内较深的较深。本文描述的方法在形成不均匀钝化层之后使用选择性蚀刻。选择性蚀刻蚀刻衬垫材料比钝化材料更快。非均匀钝化层抑制在沟槽顶部附近的选择性蚀刻的蚀刻速率（否则其将是最快的），并且使得蚀刻在沟槽中更深地开始蚀刻（否则其将是最慢的）。该方法也可用于从沟槽内均匀地去除大量材料。

2. 发明申请

WO2016085638A1 METHODS AND SYSTEMS TO ENHANCE PROCESS UNIFORMITY 审中-公开
标题翻译：提高过程均匀性的方法和系统
公开(公告)号：WO2016085638A1
公开(公告)日：2016-06-02
申请号：PCT/US2015/059660
申请日：2015-11-09
申请人： APPLIED MATERIALS, INC
发明人： SINGH, Saravjeet , TSO, Alan , ZHANG, Jingchun , LI, Zihui , ZHANG, Hanshen , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/3065
CPC分类号： H01J37/32724 , H01J37/32357 , H01J37/32449 , H01J37/32522 , H01J37/32715 , H01J2237/2001 , H01J2237/334 , H01L21/67069
摘要： A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.
摘要翻译：半导体处理室可以包括远程等离子体区域和与远程等离子体区域流体耦合的处理区域。处理区域可以被配置为将基板容纳在支撑基座上。支撑基座可以包括在基座的内部区域处的第一材料。支撑基座还可以包括与基座的远侧部分或基座的外部区域联接的环形构件。环形构件可以包括不同于第一材料的第二材料。

3. 发明申请

WO2013032638A1 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN 审中-公开
标题翻译：选择性抑制含有硅和氧的材料的干蚀速率
公开(公告)号：WO2013032638A1
公开(公告)日：2013-03-07
申请号：PCT/US2012/049768
申请日：2012-08-06
申请人： APPLIED MATERIALS, INC. , WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin, K. , LEE, Young, S.
发明人： WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin, K. , LEE, Young, S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357 , H01L21/3065 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该技术提高其选择性的材料的实例包括氮化硅和硅。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性的固体副产物。第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地除去缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

4. 发明申请

WO2013033527A2 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN 审中-公开
标题翻译：选择性抑制含氮和硅的材料的干蚀刻速率
公开(公告)号：WO2013033527A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/053329
申请日：2012-08-31
申请人： APPLIED MATERIALS, INC. , WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
发明人： WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H 2 ). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了一种抑制图案化异质结构上的暴露的含硅和氮材料的蚀刻速率的方法，其包括两阶段远程等离子体蚀刻。使用该方法增加了硅相对于氮化硅和其他含硅和氮材料的蚀刻选择性。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的多相结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一阶段的等离子体流出物由包括三氟化氮和氢（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺少保护性固体副产物的材料。第二阶段的等离子体流出物由含氟前体的远程等离子体形成。

5. 发明申请

WO2012125654A2 METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS 审中-公开
标题翻译：金属和金属氧化物膜的蚀刻方法
公开(公告)号：WO2012125654A2
公开(公告)日：2012-09-20
申请号：PCT/US2012/028952
申请日：2012-03-13
申请人： APPLIED MATERIALS, INC. , ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin
发明人： ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32422 , H01L21/31122 , H01L21/32136
摘要： A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括将含氟气体流入基板处理室的等离子体产生区域，并将能量施加到含氟气体在等离子体产生区域中产生等离子体。等离子体包含氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻含金属层蚀刻氧化硅层。

6. 发明申请

WO2011149638A2 SELECTIVE ETCH FOR SILICON FILMS 审中-公开
标题翻译：硅片的选择性蚀刻
公开(公告)号：WO2011149638A2
公开(公告)日：2011-12-01
申请号：PCT/US2011/035598
申请日：2011-05-06
申请人： APPLIED MATERIALS, INC. , ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin, K.
发明人： ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin, K.
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01L21/3065 , H01L21/311 , H01L21/31116 , H01L21/32136
摘要： A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.
摘要翻译：描述了蚀刻图案化异质含硅结构的方法，并且包括与现有远程等离子体蚀刻相比具有反向选择性的远程等离子体蚀刻。这些方法可用于在少量或不含氧化硅的同时去除多晶硅。更一般地，含有较少氧的含硅膜比含有更多氧的含硅膜更快地除去。其它示例性应用包括修整硅碳氮化物膜，同时基本上保留碳氧化硅。这些应用程序可以通过本文介绍的方法实现，从而实现新的流程。预期这些工艺流程对于各种更细的线宽结构是理想的。本文包含的方法也可以用于比含有较高氮浓度的含氮和硅的膜更快地蚀刻含硅膜。

7. 发明申请

WO2017123423A1 HYDROGEN PLASMA BASED CLEANING PROCESS FOR ETCH HARDWARE 审中-公开
标题翻译：基于氢等离子体的硬质合金清洗工艺
公开(公告)号：WO2017123423A1
公开(公告)日：2017-07-20
申请号：PCT/US2016/069204
申请日：2016-12-29
申请人： APPLIED MATERIALS, INC.
发明人： RODRIGO, Chirantha , ZHANG, Jingchun , JI, Lili , WANG, Anchuan , INGLE, Nitin K.
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/02 , H01L21/3213
CPC分类号： H01J37/32862 , C23C16/4405 , H01J37/32357 , H01J37/3244 , H01J37/32724 , H01J2237/334 , H01L21/31116 , H01L21/31138 , H01L21/67069 , Y10S438/905
摘要： The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.
摘要翻译：本公开提供了用于在衬底蚀刻之后清洁腔室组件的方法。在一个实例中，用于清洁的方法包括使用等离子体激活蚀刻气体混合物以产生活化的蚀刻气体混合物，蚀刻气体混合物包含含氢前体和含氟前体，并将活化的蚀刻气体混合物输送到处理所述处理室具有定位在其中的边缘环，所述边缘环包含催化剂和抗催化材料，其中所述活化气体从所述边缘环移除所述抗催化材料。

8. 发明申请

WO2015094495A1 PROCEDURE FOR ETCH RATE CONSISTENCY 审中-公开
标题翻译：调整速率一致性的程序
公开(公告)号：WO2015094495A1
公开(公告)日：2015-06-25
申请号：PCT/US2014/063891
申请日：2014-11-04
申请人： APPLIED MATERIALS, INC.
发明人： ZHANG, Jingchun , ZHANG, Hanshen
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , H01J37/32357 , H01J2237/334
摘要： Methods of conditioning interior processing chamber walls of an etch chamber are described. A fluorine-containing precursor may be remotely or locally excited in a plasma to treat the interior chamber walls periodically on a preventative maintenance schedule. The treated walls promote an even etch rate when used to perform gas-phase etching of silicon regions following conditioning. Alternatively, a hydrogen-containing precursor may be remotely or locally excited in a plasma to treat the interior chamber walls in embodiments. Regions of exposed silicon may then be etched with more reproducible etch rates from wafer-to-wafer. The silicon etch may be performed using plasma effluents formed from a remotely excited fluorine-containing precursor.
摘要翻译：描述了对蚀刻室的内部处理室壁进行调理的方法。可以在等离子体中远程或局部激发含氟前体，以在预防性维护计划上周期性地处理内部室壁。被处理的壁在用于在调节后对硅区进行气相蚀刻时促进均匀的蚀刻速率。或者，在实施方案中，可以在等离子体中远程或局部激发含氢前体以处理内部室壁。然后可以从晶片到晶片以更多可再现的蚀刻速率蚀刻暴露的硅的区域。可以使用由远程激发的含氟前体形成的等离子体流出物来进行硅蚀刻。

9. 发明申请

WO2013052712A2 SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION 审中-公开
标题翻译：通过可转化氢终止方式选择性硅
公开(公告)号：WO2013052712A2
公开(公告)日：2013-04-11
申请号：PCT/US2012/058818
申请日：2012-10-04
申请人： APPLIED MATERIALS, INC. , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
发明人： WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/3081 , H01L21/32137
摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

10. 发明申请

WO2012115750A2 REMOTELY-EXCITED FLUORINE AND WATER VAPOR ETCH 审中-公开
标题翻译：远程激光和水蒸气蚀刻
公开(公告)号：WO2012115750A2
公开(公告)日：2012-08-30
申请号：PCT/US2012/023356
申请日：2012-01-31
申请人： APPLIED MATERIALS, INC. , ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin K.
发明人： ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin K.
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357 , H01L28/91
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform.
摘要翻译：描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。由组合产生的化学反应产生反应物，其蚀刻图案化的异质结构，以在实施方案中产生几乎没有变形的薄的残余结构。这些方法可以用于保守地修整氧化硅，同时去除很少或没有硅，多晶硅，氮化硅，钛或氮化钛。在示例性实施例中，已经发现本文所述的蚀刻工艺是在薄的圆柱形导电结构周围除去模制氧化物，而不会导致圆柱形结构显着变形。

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