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1. 发明申请

WO2005004189A2 SIDEWALL MAGNET IMPROVING UNIFORMITY OF INDUCTIVELY COUPLED PLASMA AND SHIELDS USED THEREWITH 审中-公开
标题翻译：电动磁铁改善电感耦合等离子体和平板电脑的均匀性
公开(公告)号：WO2005004189A2
公开(公告)日：2005-01-13
申请号：PCT/US2004/020186
申请日：2004-06-22
申请人： APPLIED MATERIALS, INC. , GUNG, Tza-Jing , TANG, Xianmin , FORSTER, John , DING, Peijun , SCHWEITZER, Marc , MILLER, Keith, A. , LAVITSKY, Ilya
发明人： GUNG, Tza-Jing , TANG, Xianmin , FORSTER, John , DING, Peijun , SCHWEITZER, Marc , MILLER, Keith, A. , LAVITSKY, Ilya
IPC分类号： H01J37/00
CPC分类号： H01J37/3402 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/32623 , H01J37/3408 , H01J37/3411 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made aspect of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.
摘要翻译：本发明的一个方面包括位于等离子体溅射反应器的室壁外部的辅助磁环，并且至少部分地设置在用于感应地产生等离子体的RF线圈的径向外侧，特别是用于溅射蚀刻被溅射沉积的衬底。因此，磁屏障防止等离子体向外泄漏到线圈并提高溅射蚀刻的均匀性。当线圈当与主要目标相同的材料制成的方面被用作次要靶时，磁场也用作磁控管。本发明的另一方面包括从目标件延伸到具有光滑的内表面并由屏蔽件的中间部分中的环形凸缘支撑的一体式内屏蔽件。屏蔽可用于支持RF线圈。

2. 发明申请

WO2009073491A3 APPARATUS AND METHOD FOR DEPOSITING ELECTRICALLY CONDUCTIVE PASTING MATERIAL 审中-公开
公开(公告)号：WO2009073491A3
公开(公告)日：2009-06-11
申请号：PCT/US2008/084753
申请日：2008-11-25
申请人： APPLIED MATERIALS, INC. , FORSTER, John , SUBRAMANI, Anantha , WANG, Wei D.
发明人： FORSTER, John , SUBRAMANI, Anantha , WANG, Wei D.
IPC分类号： H01L21/203 , H01L21/304 , H01L21/3065
摘要： A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.

3. 发明申请

WO2007120276A2 AN APPARATUS AND A METHOD FOR CLEANING A DIELECTRIC FILM 审中-公开
标题翻译：一种用于清洁电介质膜的装置和方法
公开(公告)号：WO2007120276A2
公开(公告)日：2007-10-25
申请号：PCT/US2006/061033
申请日：2006-11-17
申请人： APPLIED MATERIALS, INC. , FU, Xinyu , FORSTER, John , WANG, Wei W.
发明人： FU, Xinyu , FORSTER, John , WANG, Wei W.
IPC分类号： B08B6/00
CPC分类号： H01L21/02063 , H01J37/32357 , H01J37/32422 , H01J37/3266
摘要： An apparatus and a method of cleaning a dielectric film are provided in the present invention. In one embodiment, an apparatus of cleaning a dielectric film the apparatus includes a chamber body adapted to support a substrate therein, a remote plasma source adapted to provide a plurality of reactive radicals to the chamber body, a passage coupling the remote plasma source to the chamber body, and at least one magnet disposed adjacent the passage. In another embodiment, a method of cleaning a dielectric film that includes providing a substrate having an at least partially exposed dielectric layer disposed in a process chamber, generating a plurality of reactive radicals in a remote plasma source, flowing the reactive radicals from the remote plasma source into the process chamber through a passage having at least one magnet disposed adjacent the passage, and magnetically filtering the reactive radicals passing through the passage.
摘要翻译：在本发明中提供了一种清洁电介质膜的装置和方法。在一个实施例中，一种清洁电介质膜的装置包括适于在其中支撑衬底的室主体，适于向室主体提供多个反应性基团的远程等离子体源，将远程等离子体源耦合到室主体，以及邻近通道设置的至少一个磁体。在另一个实施例中，一种清洁电介质膜的方法，该方法包括提供具有设置在处理室中的至少部分暴露的电介质层的衬底，在远程等离子体源中产生多个反应性基团，使来自远端等离子体的反应性基团通过具有邻近通道设置的至少一个磁体的通道进入处理室，并对穿过通道的反应性基团进行磁过滤。

4. 发明申请

WO2020033403A1 METHODS AND APPARATUS FOR PRODUCING LOW ANGLE DEPOSITIONS 审中-公开
公开(公告)号：WO2020033403A1
公开(公告)日：2020-02-13
申请号：PCT/US2019/045302
申请日：2019-08-06
申请人： APPLIED MATERIALS, INC.
发明人： SUBRAMANI, Anantha, K. , RAJA, Praburam , SANSONI, Steven, V. , FORSTER, John , KRAUS, Philip , GUO, Yang , KOTHNUR, Prashanth , HOUSHMAND, Farzad , MEBARKI, Bencherki , MAZZOCCO, John, Joseph , BREZOCZKY, Thomas
IPC分类号： H01L21/67 , H01L21/28 , C23C16/455
摘要： Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.

5. 发明申请

WO2009023135A1 APPARATUS FOR WAFER LEVEL ARC DETECTION AT AN RF BIAS IMPEDANCE MATCH TO THE PEDESTAL ELECTRODE 审中-公开
标题翻译：用于水平电弧检测的装置在RF偏置阻抗匹配到PEDESTAL ELECTRODE
公开(公告)号：WO2009023135A1
公开(公告)日：2009-02-19
申请号：PCT/US2008/009529
申请日：2008-08-08
申请人： APPLIED MATERIALS, INC.
发明人： PIPITONE, John , FORSTER, John
IPC分类号： B44C1/22 , C23F1/00 , G01L21/30 , H01L21/302
CPC分类号： H01J37/32706 , H01J37/32091 , H01J37/32935 , H01J2237/0206
摘要： Wafer level arc detection is provided in a plasma reactor using an RF transient sensor coupled to a threshold comparator, and a system controller responsive to the threshold comparator.
摘要翻译：使用耦合到阈值比较器的RF瞬态传感器和响应于阈值比较器的系统控制器在等离子体反应器中提供晶片级电弧检测。

6. 发明申请

WO2007087067A2 REMOTE PLASMA PRE-CLEAN WITH LOW HYDROGEN PRESSURE 审中-公开
标题翻译：远程等离子预清洗低氢压力
公开(公告)号：WO2007087067A2
公开(公告)日：2007-08-02
申请号：PCT/US2006/049440
申请日：2006-12-28
申请人： APPLIED MATERIALS, INC. , FU, Xinyu , FORSTER, John , YU, Jick , BHATNAGAR, Ajay , GOPALRAJA, Praburam
发明人： FU, Xinyu , FORSTER, John , YU, Jick , BHATNAGAR, Ajay , GOPALRAJA, Praburam
IPC分类号： B08B3/00 , H01L21/302
CPC分类号： H01L21/02063 , G03F7/427 , H01J37/32357 , H01J37/32422 , H01J37/3266 , H01L21/02068 , H01L21/67028 , H01L21/67069 , H01L21/76814
摘要： A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source (52) produces a plasma primarily of hydrogen radicals H*. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter (62, 64), removes hydrogen and other ions from the output of the remote plasma source and a supply tube (54) from the remote plasma source includes a removable dielectric liner (66) in combination with dielectric showerhead (40) and manifold liner (58).
摘要翻译：特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质去除光刻胶和氧化物残余物的等离子体清洁方法。远程等离子体源（52）产生主要为氢自由基H *的等离子体。氢气压力可以保持相对较低，例如30毫托。任选地，可以将氢气分压保持在150毫托以下，将氦气加入到处理气体中。使用400毫托氢气和氦气中的70％氦气可获得出众的结果。优选地，诸如磁性过滤器（62,64）之类的离子过滤器从远程等离子体源的输出中去除氢和其它离子，并且来自远程等离子体源的供应管（54）包括可移除的电介质衬垫（66）与介电喷头（40）和歧管衬里（58）相结合。

7. 发明申请

WO1997042648A1 RECESSED COIL FOR GENERATING A PLASMA 审中-公开
标题翻译：用于产生等离子体的回路线圈
公开(公告)号：WO1997042648A1
公开(公告)日：1997-11-13
申请号：PCT/US1997008008
申请日：1997-05-08
申请人： APPLIED MATERIALS, INC.
发明人： APPLIED MATERIALS, INC. , SUBRAMANI, Anantha , FORSTER, John , STIMSON, Bradley, O. , EDELSTEIN, Sergio , GRUNES, Howard , TEPMAN, Avi , XU, Zheng
IPC分类号： H01J37/32
CPC分类号： H01J37/32504 , H01J37/321 , H01J37/32623 , H01J37/32651 , H01J37/34
摘要： A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.
摘要翻译：提供了一种用于半导体制造系统中的等离子体室的凹陷线圈。嵌入线圈减少了材料在线圈上的沉积，这又导致线圈在工件上脱落的颗粒物质的减少。

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