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1. 发明申请

WO2017127847A1 SYMMETRIC PLASMA SOURCE TO GENERATE PIE SHAPED TREATMENT 审中-公开
标题翻译：对称等离子体源生成馅饼形状处理
公开(公告)号：WO2017127847A1
公开(公告)日：2017-07-27
申请号：PCT/US2017/014663
申请日：2017-01-24
申请人： APPLIED MATERIALS, INC.
发明人： SUBRAMANI, Anantha, K. , HOUSHMAND, Farzad , KRAUS, Philip, A. , CHOWDHURY, Abhishek , FORSTER, John, C. , BERA, Kallol
IPC分类号： H01L21/02 , H05H1/46 , H01J37/32 , H01J49/10
CPC分类号： H01J37/32091 , C23C16/45525 , C23C16/4554 , C23C16/50 , C23C16/505 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32577 , H01J2237/334 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67069
摘要： Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.
摘要翻译：描述了包括具有RF热电极的壳体的等离子体源组件，该壳体具有主体和从RF热电极垂直地向壳体正面中的开口延伸的多个源电极。还描述了包含等离子体源组件的处理室以及使用等离子体源组件的方法。

2. 发明申请

WO2009154853A2 WAFER PROCESSING DEPOSITION SHIELDING COMPONENTS 审中-公开
标题翻译：波浪加工沉积屏蔽部件
公开(公告)号：WO2009154853A2
公开(公告)日：2009-12-23
申请号：PCT/US2009/040487
申请日：2009-04-14
申请人： APPLIED MATERIALS, INC. , RIKER, Martin, Lee , MILLER, Keith, A. , SUBRAMANI, Anantha, K.
发明人： RIKER, Martin, Lee , MILLER, Keith, A. , SUBRAMANI, Anantha, K.
CPC分类号： C23C16/4585 , C23C14/34 , C23C14/50 , C23C14/564 , H01J37/32623 , H01J37/32633 , H01J37/3408 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
摘要翻译：本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件以及具有处理套件的半导体处理室。在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带基板支撑的边缘。

3. 发明申请

WO2021194702A1 RF RETURN PATH FOR REDUCTION OF PARASITIC PLASMA 审中-公开
公开(公告)号：WO2021194702A1
公开(公告)日：2021-09-30
申请号：PCT/US2021/020554
申请日：2021-03-02
申请人： APPLIED MATERIALS, INC.
发明人： SUBRAMANI, Anantha, K. , KOTRAPPA, Arun, Kumar , KUMAR, Hanish, Panavalappil Kumarankutty , SUNDAR, Ramcharan
IPC分类号： H01J37/32 , H01J2237/20235 , H01J37/32082 , H01J37/32513 , H01J37/32715
摘要： Embodiments disclosed herein include an RF return assembly. In an embodiment, the RF return assembly comprises a first plate with a flange, where a first hole and a second hole pass through the flange. The RF return assembly may further comprise a second plate over the first plate, and a first body positioned above the flange. In an embodiment, the RF return assembly further comprises a second body positioned below the flange, where the first body is affixed to the second body by a pillar that passes through the first hole. In an embodiment, the RF return assembly further comprises a spring attached between the second plate and the second body, where the spring passes through the second hole, and a conductive band to electrically couple the first body to the flange.

4. 发明申请

WO2020033403A1 METHODS AND APPARATUS FOR PRODUCING LOW ANGLE DEPOSITIONS 审中-公开
公开(公告)号：WO2020033403A1
公开(公告)日：2020-02-13
申请号：PCT/US2019/045302
申请日：2019-08-06
申请人： APPLIED MATERIALS, INC.
发明人： SUBRAMANI, Anantha, K. , RAJA, Praburam , SANSONI, Steven, V. , FORSTER, John , KRAUS, Philip , GUO, Yang , KOTHNUR, Prashanth , HOUSHMAND, Farzad , MEBARKI, Bencherki , MAZZOCCO, John, Joseph , BREZOCZKY, Thomas
IPC分类号： H01L21/67 , H01L21/28 , C23C16/455
摘要： Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.

5. 发明申请

WO2010123680A2 WAFER PROCESSING DEPOSITION SHIELDING COMPONENTS 审中-公开
标题翻译：波浪加工沉积屏蔽部件
公开(公告)号：WO2010123680A2
公开(公告)日：2010-10-28
申请号：PCT/US2010/030116
申请日：2010-04-06
申请人： APPLIED MATERIALS, INC. , RIKER, Martin, L. , EWERT, Maurice, E. , SUBRAMANI, Anantha, K.
发明人： RIKER, Martin, L. , EWERT, Maurice, E. , SUBRAMANI, Anantha, K.
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/358 , H01J37/3447
摘要： Embodiments described herein generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a collimator for mechanical and electrical coupling with a shield member positioned between a sputtering target and a substrate support pedestal is provided. The collimator comprises a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough and where the apertures located in the central region have a higher aspect ratio than the apertures located in the peripheral region.
摘要翻译：本文描述的实施例通常涉及用于将材料均匀溅射沉积到衬底上的高纵横比特征的底部和侧壁中的装置和方法。在一个实施例中，提供了用于与位于溅射靶和衬底支撑座之间的屏蔽构件进行机械和电耦合的准直器。准直器包括中心区域和周边区域，其中准直器具有穿过其中延伸的多个孔，并且位于中心区域中的孔具有比位于周边区域中的孔更高的纵横比。

6. 发明申请

WO2005100630A1 SELECTABLE DUAL POSITION MAGNETRON 审中-公开
标题翻译：可选双位置磁铁
公开(公告)号：WO2005100630A1
公开(公告)日：2005-10-27
申请号：PCT/US2005/008513
申请日：2005-03-15
申请人： APPLIED MATERIALS INC. , GUNG, Tza-Jing , YANG, Hong, S. , SUBRAMANI, Anantha, K. , EWERT, Maurice, E. , MILLER, Keith, A. , BURKHART, Vincent, E.
发明人： GUNG, Tza-Jing , YANG, Hong, S. , SUBRAMANI, Anantha, K. , EWERT, Maurice, E. , MILLER, Keith, A. , BURKHART, Vincent, E.
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A dual-position magnetron (50) that is rotated about a central axis (60) in back of a sputtering target (16), particularly for sputtering an edge of a target of a barrier material onto a wafer (18) and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron (130) is supported on a pivot arm (90) pivoting on the end of a bracket (82) fixed to the rotary shaft (62). A spring (96) biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops (100, 102) prevent excessive movement in either direction. Other mechanisms include linear slides (180) and actuators (208).
摘要翻译：一种双重位置磁控管（50），其围绕溅射靶（16）背面的中心轴线（60）旋转，特别是用于将阻挡材料的靶材的边缘溅射到晶片（18）上并重新沉积的清洁材料在目标的中心。在目标清洁期间，晶片偏置减小。在一个实施例中，弧形磁控管（130）被支撑在枢转臂（90）上，枢转臂（90）在固定到旋转轴（62）的托架（82）的端部上枢转。弹簧（96）偏压枢转臂，使得磁控管被推向目标中心并覆盖在目标中心上。提高旋转速度的离心力克服了弹簧偏压，并将磁控管移动到外部位置，长磁导管尺寸与目标边缘对齐。机械止动件（100,102）可以防止任何方向的过度运动。其他机构包括线性滑块（180）和致动器（208）。

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