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1. 发明申请

WO0243121A3 BRIGHT FIELD IMAGE REVERSAL FOR CONTACT HOLE PATTERNING 审中-公开
标题翻译：明亮的图像反向连接孔图案
公开(公告)号：WO0243121A3
公开(公告)日：2002-08-29
申请号：PCT/US0146129
申请日：2001-10-30
申请人： ADVANCED MICRO DEVICES INC
发明人： LYONS CHRISTOPHER F , SUBRAMANIAN RAMKUMAR , PLAT MARINA V , LUKANC TODD P
IPC分类号： G03F7/40 , H01L21/027 , H01L21/311
CPC分类号： H01L21/31144
摘要： A method of forming a small contact hole (160) uses a bright field mask (130) to form a small cylinder (140) in a positive resist layer (120) after exposure and developing. A negative resist layer (150) is formed around the small cylinder, and then etched or polished back to leave a top portion of the small cylinder exposed above the negative resist layer. The negative resist layer and the small cylinder (positive resist) are flood exposed to light, and then subject to a developer. What remains is a small contact hole (160) located where the small cylinder was previously located.
摘要翻译：在曝光和显影之后，形成小接触孔（160）的方法使用明视场掩模（130）在正光刻胶层（120）中形成小圆筒（140）。在小圆筒周围形成负的抗蚀剂层（150），然后被蚀刻或抛光回去，以使暴露在负性抗蚀剂层上方的小圆柱体的顶部部分留下。负抗蚀剂层和小圆筒（正性抗蚀剂）暴露于光下，然后经受显影剂。剩下的是位于小气瓶以前位于的小接触孔（160）。

2. 发明申请

WO0243140A2 IMAGING LAYER AS HARD MASK FOR ORGANIC LOW-K MATERIALS 审中-公开
标题翻译：成像层作为有机低K材料的硬掩模
公开(公告)号：WO0243140A2
公开(公告)日：2002-05-30
申请号：PCT/US0149460
申请日：2001-10-23
申请人： ADVANCED MICRO DEVICES INC
发明人： SUBRAMANIAN RAMKUMAR , SINGH BHANWAR , PLAT MARINA V , LYONS CHRISTOPHER F
IPC分类号： G03F7/00 , G03F7/095 , H01L21/027 , H01L21/311 , H01L21/768
CPC分类号： H01L21/76829 , G03F7/0035 , G03F7/095 , H01L21/0274 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/76808 , H01L2221/1031
摘要： A method of utilizing a bi-layer resist (110) to form contact holes, via and/or trenches between conductive layers. A bottom organic layer (130) of the bi-layer resist is formed, and then a silicon-containing top imaging layer (120) is formed on top of the lower layer. The top imaging layer is patterned to a desired pattern, using an etch chemistry which is etch-resistant to the lower layer. Since the top imaging layer is a thin layer, a precise pattern can be formed. The bottom organic layer is then patterned using the patterned upper layer as a hard mask, and using an etchant that is etch-resistant to the top imaging layer. The organic bottom layer remains in the semiconductor device as a low-k dielectric layer, and the top imaging layer may also remain, or may be removed, since it forms a dirty oxide layer that is useful in a providing conductive separation between conductive layers of a semiconductor device.
摘要翻译：一种利用双层抗蚀剂（110）在导电层之间形成接触孔，通孔和/或沟槽的方法。形成双层抗蚀剂的底部有机层（130），然后在下层的顶部上形成含硅顶层成像层（120）。使用对下层进行耐蚀刻的蚀刻化学品将顶部成像层图案化为期望的图案。由于顶部成像层是薄层，因此可以形成精确的图案。然后使用图案化的上层作为硬掩模，并使用对顶部成像层进行耐蚀刻的蚀刻剂来对底部有机层进行图案化。有机底层作为低k电介质层保留在半导体器件中，并且顶部成像层也可以保留或可以被去除，因为它形成脏的氧化物层，其有助于在导电层之间提供导电分离半导体器件。

3. 发明申请

WO2005015635A3 SPIN ON POLYMERS FOR ORGANIC MEMORY DEVICES 审中-公开
标题翻译：用于有机存储器件的聚合物旋转
公开(公告)号：WO2005015635A3
公开(公告)日：2005-06-09
申请号：PCT/US2004006220
申请日：2004-03-01
申请人： ADVANCED MICRO DEVICES INC , OGLESBY JANE V , LYONS CHRISTOPHER F , SUBRAMANIAN RAMKUMAR , HUI ANGELA T , NGO MINH VAN , PANGRLE SUZETTE
发明人： OGLESBY JANE V , LYONS CHRISTOPHER F , SUBRAMANIAN RAMKUMAR , HUI ANGELA T , NGO MINH VAN , PANGRLE SUZETTE
IPC分类号： G11C11/56 , G11C13/02 , H01L27/28 , H01L51/00 , H01L51/30 , H01L51/40
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/0016 , G11C2213/16 , G11C2213/71 , H01L27/285 , H01L51/0003 , H01L51/0004 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0041 , H01L51/005 , H01L51/0053 , H01L51/0059 , H01L51/0062 , H01L51/0077 , H01L51/0078 , H01L51/0081 , H01L51/0084 , H01L51/0085 , Y10S977/843 , Y10S977/944
摘要： A method of making organic memory cells (104) made of two electrodes (106, 108) with a controllably conductive media (110) between the two electrodes (106, 108) is disclosed. The controllably conductive media (110) contains an organic semiconductor layer (112) and passive layer (114). The organic semiconductor layer (112) is formed using spin-on techniques with the assistance of certain solvents.
摘要翻译：公开了一种制造由在两个电极（106,108）之间具有可控导电介质（110）的两个电极（106,108）制成的有机存储单元（104）的方法。可控导电介质（110）包含有机半导体层（112）和无源层（114）。在某些溶剂的帮助下，使用旋转技术形成有机半导体层（112）。

4. 发明申请

WO2004034442A3 METHOD FOR SEMICONDUCTOR GATE WIDTH REDUCTION 审中-公开
标题翻译：半导体栅极宽度减少的方法
公开(公告)号：WO2004034442A3
公开(公告)日：2004-07-29
申请号：PCT/US0323749
申请日：2003-07-29
申请人： ADVANCED MICRO DEVICES INC
发明人： BONSER DOUGLAS J , PLAT MARINA V , YANG CHIH YUH , BELL SCOTT A , DAKSHINA-MURTHY SRIKANTESWARA , FISHER PHILIP A , LYONS CHRISTOPHER F
IPC分类号： H01L21/28
CPC分类号： H01L21/28123
摘要： To reduce the width of a MOSFET gate, the gate (16) is formed with a hardmask (14) formed thereupon. An isotropic etch is then performed to trim the gate (16) in order to reduce the width of the gate. The resulting gate may be formed with a width that is narrower than a minimum width achievable solely through conventional projection lithography techniques.
摘要翻译：为了减小MOSFET栅极的宽度，栅极（16）形成有形成在其上的硬掩模（14）。然后执行各向同性蚀刻以修整栅极（16），以便减小栅极的宽度。所得到的栅极可以形成为比仅通过常规投影光刻技术可实现的最小宽度窄的宽度。

5. 发明申请

WO2004012246A3 METHOD FOR REDUCING PATTERN DEFORMATION AND PHOTORESIST POISONING IN SEMICONDUCTOR DEVICE FABRICATION 审中-公开
标题翻译：减少半导体器件制造中的图案变形和光致变色中毒的方法
公开(公告)号：WO2004012246A3
公开(公告)日：2004-05-13
申请号：PCT/US0323746
申请日：2003-07-29
申请人： ADVANCED MICRO DEVICES INC
发明人： BONSER DOUGLAS J , PLAT MARINA V , YANG CHIH YUH , BELL SCOTT A , CHAN DARIN A , FISHER PHILIP A , LYONS CHRISTOPHER F , CHANG MARK S , GAO PEI-YUAN , WRIGHT MARILYN I , YOU LU , DAKSHINA-MURTHY SRIKANTESWARA
IPC分类号： H01L21/28 , H01L21/033 , H01L21/3065 , H01L21/3213 , H01L29/78
CPC分类号： H01L21/32139 , H01L21/0332
摘要： A hardmask stack is comprised of alternating layers of doped amorphous carbon (22) and undoped amorphous carbon (20). The undoped amorphous carbon layers (20) serve as buffer layers that constrain the effects of compressive stress within the doped amorphous carbon layers (22) to prevent delamination. The stack is provided with a top capping layer (12). The layer beneath the capping layer (12) is preferably undoped amorphous carbon to reduce photoresist poisoning. An alternative hardmask stack is comprised of alternating layers of capping material (42) and amorphous carbon (40). The amorphous carbon layers (40) may be doped or undoped. The capping material layers (42) serve as buffer layers that constrain the effects of compressive stress within the amorphous carbon layers (40) to prevent delamination. The top layer of the stack is formed of a capping material (42). The layer beneath the top layer is preferably undoped amorphous carbon (40) to reduce photoresist poisoning. The lowest layer of the hardmask stack is preferably amorphous carbon (40) to facilitate easy removal of the hardmask stack from underlyingmaterials(8) by an ashing process.
摘要翻译：硬掩模叠层由掺杂的无定形碳（22）和未掺杂的无定形碳（20）的交替层组成。未掺杂的无定形碳层（20）用作缓冲层，其限制掺杂的无定形碳层（22）内的压缩应力的影响以防止分层。该堆叠具有顶部封盖层（12）。覆盖层（12）下方的层优选为未掺杂的无定形碳以减少光致抗蚀剂中毒。替代的硬掩模堆叠由交替的封盖材料（42）和无定形碳（40）层组成。无定形碳层（40）可以是掺杂的或不掺杂的。封盖材料层（42）用作缓冲层，其限制无定形碳层（40）内的压缩应力的影响以防止分层。堆叠的顶层由封盖材料（42）形成。顶层下方的层优选为未掺杂的无定形碳（40）以减少光致抗蚀剂中毒。硬掩模堆叠的最下层优选为无定形碳（40），以便于通过灰化工艺容易地从底层材料（8）移除硬掩模堆叠。

6. 发明申请

WO2005085956A3 PELLICLE FOR A LITHOGRAPHIC LENS 审中-公开
标题翻译：石英镜片
公开(公告)号：WO2005085956A3
公开(公告)日：2006-03-02
申请号：PCT/US2005006210
申请日：2005-02-26
申请人： ADVANCED MICRO DEVICES INC , KYE JONGWOOK , BABCOCK CARL P , LYONS CHRISTOPHER F
发明人： KYE JONGWOOK , BABCOCK CARL P , LYONS CHRISTOPHER F
IPC分类号： G03F7/20
CPC分类号： G03F7/70983 , G03F7/70833 , G03F7/70916
摘要： Disclosed are a method and apparatus for preventing contamination in a lithographic apparatus (10) including a projection system (24). The lithographic apparatus (10) images an irradiated portion of a mask (22) onto a target portion (40) of a substrate (28). A pellicle (32, 36) is placed with respect to a surface (34, 38) of the projection system (24) to inhibit contamination of the surface (34, 38) using a moveable mounting means (42a, 42b).
摘要翻译：公开了一种用于防止包含投影系统（24）的光刻设备（10）中的污染的方法和装置。光刻设备（10）将掩模（22）的照射部分成像到基底（28）的目标部分（40）上。相对于投影系统（24）的表面（34,38）放置防护薄膜组件（32,36），以防止使用可移动的安装装置（42a，42b）对表面（34,38）的污染。

7. 发明申请

WO2005062128A3 IMMERSION LITHOGRAPHIC PROCESS USING A CONFORMING IMMERSION MEDIUM 审中-公开
标题翻译：采用一种浸渍介质的浸没式光刻工艺
公开(公告)号：WO2005062128A3
公开(公告)日：2005-11-24
申请号：PCT/US2004035419
申请日：2004-10-26
申请人： ADVANCED MICRO DEVICES INC , LYONS CHRISTOPHER F , BABCOCK CARL P , KYE JONGWOOK
发明人： LYONS CHRISTOPHER F , BABCOCK CARL P , KYE JONGWOOK
IPC分类号： G03F7/20
CPC分类号： G03F7/70341
摘要： A method of making a device using a lithographic system (10) having a lens (32) from which an exposure pattern (24) is emitted. A conforming immersion medium (26) can be positioned between a photo resist layer (34) and the lens. The photo resist layer, which can be disposed over a wafer, and the lens can be brought into intimate contact with the conforming medium. The photo resist can then be exposed with the exposure pattern so that the exposure pattern traverses the conforming immersion medium.
摘要翻译：一种使用具有透镜（32）的光刻系统（10）制造装置的方法，从该透镜发射曝光图案（24）。顺应浸没介质（26）可以位于光致抗蚀剂层（34）和透镜之间。可以布置在晶片上的光刻胶层和透镜可以与贴合介质紧密接触。然后可以用曝光图案曝光光致抗蚀剂，使得曝光图案穿过相符的浸入介质。

8. 发明申请

WO2005104188A2 POLYMER DIELECTRICS FOR MEMORY ELEMENT ARRAY INTERCONNECT 审中-公开
标题翻译：用于存储元件阵列互连的聚合物电介质
公开(公告)号：WO2005104188A2
公开(公告)日：2005-11-03
申请号：PCT/US2005004680
申请日：2005-02-11
申请人： ADVANCED MICRO DEVICES INC , LYONS CHRISTOPHER F
发明人： LYONS CHRISTOPHER F
IPC分类号： G11C11/56 , G11C13/02 , H01L21/00 , H01L21/312 , H01L23/58 , H01L27/28 , H01L29/08 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C13/0009 , G11C13/0016 , G11C13/0069 , G11C2013/009 , G11C2213/71 , G11C2213/77 , H01L27/285 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0041 , H01L51/0042 , H01L51/0078 , H01L51/0094 , H01L51/0583 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are semiconductor devices (100) containing a polymer dielectric (103) and at least one active device (104) containing an organic semiconductor material (112) and a passive layer (114). Also disclosed are semiconductor devices (100) further containing a conductive polymer (106 and/or 108). Such devices are characterized by light weight and robust reliability.
摘要翻译：公开了包含聚合物电介质（103）的半导体器件（100）和包含有机半导体材料（112）和无源层（114）的至少一个有源器件（104）。还公开了进一步包含导电聚合物（106和/或108）的半导体器件（100）。这样的装置的特征在于重量轻和鲁棒的可靠性。

9. 发明申请

WO2005045935A3 SIDEWALL FORMATION FOR HIGH DENSITY POLYMER MEMORY ELEMENT ARRAY 审中-公开
标题翻译：高密度聚合物存储元件阵列的侧壁形成
公开(公告)号：WO2005045935A3
公开(公告)日：2005-10-13
申请号：PCT/US2004031275
申请日：2004-09-23
申请人： ADVANCED MICRO DEVICES INC , LYONS CHRISTOPHER F , CHANG MARK S , LOPATIN SERGEY D , SUBRAMANIAN RAMKUMAR , CHEUNG PATRICK , NGO MINH VAN , OGLESBY JANE V
发明人： LYONS CHRISTOPHER F , CHANG MARK S , LOPATIN SERGEY D , SUBRAMANIAN RAMKUMAR , CHEUNG PATRICK , NGO MINH VAN , OGLESBY JANE V
IPC分类号： G11C11/56 , G11C13/02 , H01L27/115 , H01L27/28 , H01L29/68 , H01L45/00 , H01L51/00
CPC分类号： G11C11/5664 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L27/285 , H01L51/0595
摘要： Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing various depositing and etching processes. The side wall memory cells (115) can have a bit line (610) of the wafer (806) as the first electrode (104, 1502) and operate with a second formed electrode (110, 1504) to activate a portion of an organic matter that is formed there between.
摘要翻译：公开了用于增加与光刻特征相关联的存储器单元的数量的系统和方法。该系统包括通过采用各种沉积和蚀刻工艺在光刻特征的侧壁上形成的存储元件。侧壁存储器单元（115）可以具有作为第一电极（104,1502）的晶片（806）的位线（610）并且与第二形成的电极（110,1504）一起操作以激活一部分有机在它们之间形成的问题。

10. 发明申请

WO2004006014A3 METHOD OF USING AN AMORPHOUS CARBON LAYER FOR IMPROVED RETICLE FABRICATION 审中-公开
标题翻译：使用非晶碳层改进制备方法
公开(公告)号：WO2004006014A3
公开(公告)日：2004-06-10
申请号：PCT/US0320113
申请日：2003-06-25
申请人： ADVANCED MICRO DEVICES INC
发明人： TABERY CYRUS E , LYONS CHRISTOPHER F
IPC分类号： G03F1/54 , G03F1/76 , H01L21/027 , G03F1/08 , G03F7/09
CPC分类号： G03F1/54 , G03F1/76
摘要： A method of using an amorphous carbon layer (130) for improved reticle fabrication includes depositing a stack of layers including a substrate (110), an absorber (120), a transfer layer (130), an antireflective coating (ARC) layer (140), and a photoresist layer (150), patterning (45) the photoresist layer (150), and etching (55, 65) the ARC layer (140) and the transfer layer (130). The method also includes etching (75) the absorber layer(120) and removing (85) the transfer layer (130). The transfer layer (130) including amorphous carbon.
摘要翻译：使用无定形碳层（130）来改进光罩制造的方法包括沉积包括衬底（110），吸收体（120），转印层（130），抗反射涂层（ARC）层140 ）和光致抗蚀剂层（150），图案化（45）光致抗蚀剂层（150）以及刻蚀（55,65）ARC层（140）和转印层（130）。该方法还包括蚀刻（75）吸收层（120）和去除（85）转印层（130）。转印层（130）包括无定形碳。

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