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    • 4. 发明申请
    • ELECTRICAL CONNECTIONS FOR ANODIZED THIN FILM STRUCTURES
    • 阳极化薄膜结构的电连接
    • WO2010074913A2
    • 2010-07-01
    • PCT/US2009/066541
    • 2009-12-03
    • 3M INNOVATIVE PROPERTIES COMPANYTHEISS, Steven D.HAASE, Michael A.
    • THEISS, Steven D.HAASE, Michael A.
    • H01B5/14H01B1/00
    • H01L21/76802H01L27/1214H01L27/124H01L2224/24137H05K3/4092Y10T29/49002Y10T29/49124Y10T29/49147Y10T428/12396
    • Approaches for formation of a circuit via which electrically connects a first thin film metallization layer a second thin film metallization layer are described. Via formation involves the use of an anodization barrier and/or supplemental pad disposed in a via connection region prior to anodization of the first metallization layer. The material used to form the barrier is substantially impermeable to the anodization solution during anodization, and disrupts the formation of oxide between the electrically conducting layer and the barrier. The supplemental pad is non-anodizable, and is covered by the barrier to substantially prevent current flow through the pad during anodization. Following anodization, the barrier is removed. If the supplemental pad is sufficiently conductive, it can be left on the first metallization layer after removal of the barrier. The second metallization layer is disposed over the anodized layer, making electrical contact with the first electrically conductive layer in the via connection region.
    • 描述了用于形成电连接第一薄膜金属化层和第二薄膜金属化层的电路的方法。 通道形成涉及在阳极氧化第一金属化层之前使用设置在通孔连接区域中的阳极氧化阻挡层和/或辅助衬垫。 用于形成阻挡层的材料在阳极氧化期间基本上不能渗透阳极氧化溶液,并且破坏导电层和阻挡层之间的氧化物的形成。 辅助垫是不可阳极氧化的,并且被阻挡层覆盖以基本上防止电流在阳极氧化过程中流过焊盘。 阳极氧化后,屏障被删除。 如果辅助垫具有足够的导电性,则可以在去除阻挡层后将其留在第一金属化层上。 第二金属化层设置在阳极氧化层上方,与通孔连接区域中的第一导电层电接触。