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1. 发明申请

WO2011130231A1 SYSTEM AND METHOD FOR MODIFICATION AND/OR SMOOTHING OF TISSUE WITH LASER ABLATION 审中-公开
标题翻译：用于激光消融的组织修饰和/或吸收的系统和方法
公开(公告)号：WO2011130231A1
公开(公告)日：2011-10-20
申请号：PCT/US2011/032061
申请日：2011-04-12
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CONNORS, Daniel Patrick , FELSENSTEIN, Jerome , TRZCINSKI, Robert E. , WYNNE, James J. , ZUPANSKI-NIELSEN, Donna S.
发明人： CONNORS, Daniel Patrick , FELSENSTEIN, Jerome , TRZCINSKI, Robert E. , WYNNE, James J. , ZUPANSKI-NIELSEN, Donna S.
IPC分类号： A61B18/20
CPC分类号： A61B18/20 , A61B2018/207
摘要： Disclosed is an improved system and method for efficiently removing tissue using laser ablation. A first laser emits a first laser beam with a variable first integrated fluence sufficient to ablate tissue. The first laser beam is movably positioned over one or more surfaces of the tissue and the first integrated fluence varies over different levels with position, so different thicknesses of tissue are ablated at different surface positions in order to modify the contour of the surface of the tissue. Modifications include tissue smoothing, removing, feathering, sharpening, and roughening. In one preferred embodiment the tissue is eschar that is removed, unveiling viable tissue. In alternate preferred embodiments, one or more additional lasers beams with different wavelengths, with integrated fluence sufficient to ablate tissue, are moved over the surface of the tissue until a second ablation reaches a second self-termination point, e.g., determined by affects of chemicals below the termination point that absorb the second laser beam without producing the temperature increase necessary for ablation to continue.
摘要翻译：公开了一种使用激光烧蚀有效去除组织的改进的系统和方法。第一激光器发射具有足以消融组织的可变的第一积分能量密度的第一激光束。第一激光束可移动地定位在组织的一个或多个表面上，并且第一集成能量密度在具有位置的不同水平上变化，因此不同厚度的组织在不同的表面位置被消融，以便改变组织表面的轮廓。修改包括组织平滑，去除，羽化，磨锐和粗糙化。在一个优选实施方案中，组织是被除去的焦痂，揭开活组织。在替代优选实施例中，具有足以消融组织的积分能量密度的具有不同波长的一个或多个附加的激光束在组织的表面上移动，直到第二消融达到第二自终止点，例如由化学物质的影响确定低于吸收第二激光束的终止点，而不产生消融所需的温度升高。

2. 发明申请

WO2012089558A1 IMPROVED INTERFACE BETWEEN A I-III-VI2 MATERIAL LAYER AND A MOLYBDENUM SUBSTRATE 审中-公开
标题翻译： I-III-VI2材料层和钼基材之间的改善的界面
公开(公告)号：WO2012089558A1
公开(公告)日：2012-07-05
申请号：PCT/EP2011/073401
申请日：2011-12-20
申请人： NEXCIS , GRAND, Pierre-Philippe , JAIME FERRER, Jesus Salvador , ROCHE, Emmanuel , DELIGIANNI, Hariklia , VAIDYANATHAN, Raman , REUTER, Kathleen B. , HUANG, Qiang , ROMANKIW, Lubomyr , MASON, Maurice , ZUPANSKI-NIELSEN, Donna S.
发明人： GRAND, Pierre-Philippe , JAIME FERRER, Jesus Salvador , ROCHE, Emmanuel , DELIGIANNI, Hariklia , VAIDYANATHAN, Raman , REUTER, Kathleen B. , HUANG, Qiang , ROMANKIW, Lubomyr , MASON, Maurice , ZUPANSKI-NIELSEN, Donna S.
IPC分类号： H01L21/02 , H01L21/36
CPC分类号： H01L31/18 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： The present invention relates to a method for fabricating a thin layer made of a I-III-VI alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer.
摘要翻译：本发明涉及一种由I-III-VI合金制成并具有光伏特性的薄层制造方法。根据本发明的方法包括第一步骤：a）在衬底（SUB）上沉积适应层（MO）; b）在所述适配层上沉积包含至少元件I和/或III的至少一层（SEED）层。适应层沉积在接近真空条件下，步骤b）包括在与适应层的沉积相同的条件下沉积第一层I和/或III元素的第一操作，而不暴露于空气中的适配层。

3. 发明申请

WO2007084907A2 METHOD FOR FABRICATING LAST LEVEL COPPER-TO-C4 CONNECTION WITH INTERFACIAL CAP STRUCTURE 审中-公开
标题翻译：制造具有界面盖结构的最后一级铜 - 碳连接的方法
公开(公告)号：WO2007084907A2
公开(公告)日：2007-07-26
申请号：PCT/US2007/060615
申请日：2007-01-16
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , DAUBENSPECK, Timothy, H. , LANDERS, William, F. , ZUPANSKI-NIELSEN, Donna, S.
发明人： DAUBENSPECK, Timothy, H. , LANDERS, William, F. , ZUPANSKI-NIELSEN, Donna, S.
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05147 , H01L2224/05575 , H01L2224/05599 , H01L2224/1148 , H01L2224/13007 , H01L2224/13022 , H01L2224/13111 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/01015
摘要： The present invention relates to a method for fabricating a semiconductor device with a last level copper-to-C4 connection that is essentially free of aluminum. Specifically, the last level copper-to-C4 connection comprises an interfacial cap structure (30) containing CoWP, NiMoP, NiMoB, NiReP, NiWP, and combinations thereof. Preferably, the interfacial cap structure comprises at least one CoWP layer. Such a CoWP layer can be readily formed over a last level copper interconnect (22) by a selective electroless plating process.
摘要翻译：本发明涉及一种用于制造具有基本上不含铝的最后一层铜到C4连接的半导体器件的方法。具体而言，最后一级铜与C4连接包括含有CoWP，NiMoP，NiMoB，NiReP，NiWP及其组合的界面帽结构（30）。优选地，界面帽结构包括至少一个CoWP层。这种CoWP层可以通过选择性无电镀工艺容易地形成在最后一层铜互连（22）上。

4. 发明申请

WO2007084907A8 METHOD FOR FABRICATING LAST LEVEL COPPER-TO-C4 CONNECTION WITH INTERFACIAL CAP STRUCTURE 审中-公开
标题翻译：用于制作具有界面结构的最新级别的铜与铜的连接方法
公开(公告)号：WO2007084907A8
公开(公告)日：2009-01-29
申请号：PCT/US2007060615
申请日：2007-01-17
申请人： IBM , DAUBENSPECK TIMOTHY H , LANDERS WILLIAM F , ZUPANSKI-NIELSEN DONNA S
发明人： DAUBENSPECK TIMOTHY H , LANDERS WILLIAM F , ZUPANSKI-NIELSEN DONNA S
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05147 , H01L2224/05575 , H01L2224/05599 , H01L2224/1148 , H01L2224/13007 , H01L2224/13022 , H01L2224/13111 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/01015
摘要： The present invention relates to a method for fabricating a semiconductor device with a last level copper-to-C4 connection that is essentially free of aluminum. Specifically, the last level copper-to-C4 connection comprises an interfacial cap structure (30) containing CoWP, NiMoP, NiMoB, NiReP, NiWP, and combinations thereof. Preferably, the interfacial cap structure comprises at least one CoWP layer. Such a CoWP layer can be readily formed over a last level copper interconnect (22) by a selective electroless plating process.
摘要翻译：本发明涉及一种用于制造具有基本上不含铝的最后一级铜对C4连接的半导体器件的方法。具体地说，最后一级的铜对C4连接包括含有CoWP，NiMoP，NiMoB，NiReP，NiWP及其组合的界面帽结构（30）。优选地，界面帽结构包括至少一个CoWP层。这种CoWP层可以通过选择性无电镀方法容易地在最后一级的铜互连（22）上形成。

5. 发明申请

WO2007084907A3 METHOD FOR FABRICATING LAST LEVEL COPPER-TO-C4 CONNECTION WITH INTERFACIAL CAP STRUCTURE 审中-公开
标题翻译：用于制作具有界面结构的最新级别的铜与铜的连接方法
公开(公告)号：WO2007084907A3
公开(公告)日：2007-12-21
申请号：PCT/US2007060615
申请日：2007-01-17
申请人： IBM , DAUBENSPECK TIMOTHY H , LANDERS WILLIAM F , ZUPANSKI-NIELSEN DONNA S
发明人： DAUBENSPECK TIMOTHY H , LANDERS WILLIAM F , ZUPANSKI-NIELSEN DONNA S
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05147 , H01L2224/05575 , H01L2224/05599 , H01L2224/1148 , H01L2224/13007 , H01L2224/13022 , H01L2224/13111 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/01015
摘要： The present invention relates to a method for fabricating a semiconductor device with a last level copper-to-C4 connection that is essentially free of aluminum. Specifically, the last level copper-to-C4 connection comprises an interfacial cap structure (30) containing CoWP, NiMoP, NiMoB, NiReP, NiWP, and combinations thereof. Preferably, the interfacial cap structure comprises at least one CoWP layer. Such a CoWP layer can be readily formed over a last level copper interconnect (22) by a selective electroless plating process.
摘要翻译：本发明涉及一种用于制造具有基本上不含铝的最后一级铜对C4连接的半导体器件的方法。具体地说，最后一级的铜对C4连接包括含有CoWP，NiMoP，NiMoB，NiReP，NiWP及其组合的界面帽结构（30）。优选地，界面帽结构包括至少一个CoWP层。这种CoWP层可以通过选择性无电镀方法容易地在最后一级的铜互连（22）上形成。

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