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1. 发明申请

WO2008036210A2 METHODS OF AND APPARATUS FOR MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING 审中-公开
标题翻译：用于测量和控制脉冲RF偏置加工中的波长电位的方法和装置
公开(公告)号：WO2008036210A2
公开(公告)日：2008-03-27
申请号：PCT/US2007/020050
申请日：2007-09-14
申请人： LAM RESEARCH CORPORATION , KUTHI, Andras , HWANG, Stephen , VETTER, James, C. , EILENSTINE, Greg , NGO, Tuan , WANG, Rongping
发明人： KUTHI, Andras , HWANG, Stephen , VETTER, James, C. , EILENSTINE, Greg , NGO, Tuan , WANG, Rongping
IPC分类号： G01R1/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.
摘要翻译：提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

2. 发明申请

WO2001045134A3 METHOD AND APPARATUS FOR PRODUCING UNIFORM PROCESS RATES 审中-公开
公开(公告)号：WO2001045134A3
公开(公告)日：2001-06-21
申请号：PCT/US2000/042174
申请日：2000-11-14
申请人： LAM RESEARCH CORPORATION , BAILEY, Andrew, D., III , SCHOEPP, Alan, M. , KUTHI, Andras
发明人： BAILEY, Andrew, D., III , SCHOEPP, Alan, M. , KUTHI, Andras
IPC分类号： H01J37/32
摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

3. 发明申请

WO2006044722A2 APPARATUS AND METHODS FOR IMPROVING THE STABILITY OF RF POWER DELIVERY TO A PLASMA LOAD 审中-公开
标题翻译：用于改善RF功率输送到等离子体负载的稳定性的装置和方法
公开(公告)号：WO2006044722A2
公开(公告)日：2006-04-27
申请号：PCT/US2005/037125
申请日：2005-10-12
申请人： LAM RESEARCH CORPORATION , HOWALD, Arthur, M , KUTHI, Andras , BAILEY, Andrew, D, III
发明人： HOWALD, Arthur, M , KUTHI, Andras , BAILEY, Andrew, D, III
IPC分类号： G09G3/16 , C23F1/00 , B44C1/22 , H01J7/24
CPC分类号： H01J37/32082 , H01J37/32183 , H01J37/3299 , H03H7/40 , H05H1/46
摘要： Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.
摘要翻译：公开了用于提高RF功率输送到等离子体负载的稳定性的方法。该方法包括在RF功率系统的许多特定位置之一处添加RF电阻器和/或功率衰减器，以降低阻抗导数，同时保持匹配电路与RF传输线基本一致。

4. 发明申请

WO2008109240A1 EDGE ELECTRODES WITH DIELECTRIC COVERS 审中-公开
标题翻译：带电介质盖的边缘电极
公开(公告)号：WO2008109240A1
公开(公告)日：2008-09-12
申请号：PCT/US2008/054027
申请日：2008-02-14
申请人： LAM RESEARCH CORPORATION , SEXTON, Gregory, S. , BAILEY, Andrew, D. , KUTHI, Andras , KIM, Yunsang
发明人： SEXTON, Gregory, S. , BAILEY, Andrew, D. , KUTHI, Andras , KIM, Yunsang
IPC分类号： H01L21/3065
CPC分类号： H01L21/02087 , H01J37/32009 , H01J37/32082 , H01J37/32559 , H01J37/32642 , H01J37/32862 , H01L21/02057 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。等离子体处理室包括被配置为接收衬底的衬底支撑件。等离子体处理室还包括围绕衬底支撑件的底部边缘电极。底部边缘电极和基底支撑件通过底部介电环彼此电隔离。面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。顶边电极电接地。面向衬底的顶边电极的表面被顶部薄介电层覆盖。顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。

5. 发明申请

WO2007038030A3 APPARATUS FOR THE REMOVAL OF A FLUORINATED POLYMER FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
公开(公告)号：WO2007038030A3
公开(公告)日：2007-04-05
申请号：PCT/US2006/036139
申请日：2006-09-15
申请人： LAM RESEARCH CORPORATION , YOON, Hyungsuk Alexander , BOYD, John , KUTHI, Andras , BAILEY III, Andrew, D.
发明人： YOON, Hyungsuk Alexander , BOYD, John , KUTHI, Andras , BAILEY III, Andrew, D.
IPC分类号： H01J7/24 , H01L21/302
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.

6. 发明申请

WO2006012003A2 REDUCING PLASMA IGNITION PRESSURE 审中-公开
标题翻译：降低等离子点火压力
公开(公告)号：WO2006012003A2
公开(公告)日：2006-02-02
申请号：PCT/US2005/021098
申请日：2005-06-14
申请人： LAM RESEARCH CORPORATION , WIEPKING, Mark , LYNDAKER, Bradford, J , KUTHI, Andras , FISCHER, Andreas
发明人： WIEPKING, Mark , LYNDAKER, Bradford, J , KUTHI, Andras , FISCHER, Andreas
IPC分类号： B23K9/00
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32706
摘要： A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
摘要翻译：公开了用于处理半导体衬底的等离子体处理系统中的方法。等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电吸盘。该方法包括在等离子体点火步骤中点燃等离子体。等离子体点火步骤在由偏置补偿电路提供给卡盘的第一偏置补偿电压基本为零并且等离子体处理室内的第一室压低于约90毫托时执行。该方法还包括在等离子体被点燃之后在衬底处理步骤中处理衬底。衬底处理步骤使用由偏置补偿电路提供的高于第一偏置补偿电压的第二偏置补偿电压以及基本上等于第一室压力的第二室压力。

7. 发明申请

WO2009155352A2 MATCHING CIRCUIT FOR A COMPLEX RADIO FREQUENCY (RF) WAVEFORM 审中-公开
标题翻译：用于复合无线电频率（RF）波形的匹配电路
公开(公告)号：WO2009155352A2
公开(公告)日：2009-12-23
申请号：PCT/US2009/047675
申请日：2009-06-17
申请人： LAM RESEARCH CORPORATION , LEMING, Andres , KUTHI, Andras , ANDERSON, Thomas
发明人： LEMING, Andres , KUTHI, Andras , ANDERSON, Thomas
IPC分类号： H05H1/36 , H01L21/3065 , H01L21/205
CPC分类号： H03B21/00
摘要： A complex waveform frequency matching device is disclosed. In various embodiments, the matching device comprises a plurality of radio frequency generators coupled in parallel with one another. Each subsequent one of the plurality of radio frequency generators is configured to produce a harmonic frequency related by an integral multiple to a frequency produced by any lower-frequency producing radio frequency generator, thereby generating a complex waveform. A plurality of frequency splitter circuits is coupled to an output of the plurality of radio frequency generators, and each of a plurality of matching networks has an input coupled to an output of one of the plurality of frequency splitter circuits and an output configured to be coupled to a plasma chamber.
摘要翻译：公开了一种复杂的波形频率匹配装置。在各种实施例中，匹配装置包括彼此并联耦合的多个射频发生器。多个射频发生器中的后续一个被配置为产生与由任何较低频产生的射频发生器产生的频率的整数倍相关的谐波频率，从而产生复合波形。多个分频器电路耦合到多个射频发生器的输出，并且多个匹配网络中的每一个具有耦合到多个分频器电路之一的输出的输入和被配置为耦合的输出到等离子体室。

8. 发明申请

WO2006031452A2 APPARATUS FOR THE OPTIMIZATION OF ATMOSPHERIC PLASMA IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于优化等离子体处理系统中大气等离子体的装置
公开(公告)号：WO2006031452A2
公开(公告)日：2006-03-23
申请号：PCT/US2005/031105
申请日：2005-08-31
申请人： LAM RESEARCH CORPORATION , KIM, Yunsang , KUTHI, Andras
发明人： KIM, Yunsang , KUTHI, Andras
IPC分类号： H01L21/306
CPC分类号： H01L21/02071 , H01L21/02046 , H01L21/31116 , H05H1/2406 , H05H2001/2412 , H05H2001/2437
摘要： An apparatus for cleaning a substrate in a reactive ion etch process is disclosed. The apparatus is configured to produce an atmospheric plasma using a RF generation device. The apparatus includes a plasma forming chamber including a cavity defined by a set of interior chamber walls comprised of a dielectric material. The apparatus also includes an atmospheric plasma generated by the RF generation device, the atmospheric plasma protruding from a first end of the cavity to clean the substrate.
摘要翻译：公开了一种用于在反应离子蚀刻工艺中清洁衬底的设备。该装置被配置为使用RF产生装置产生大气等离子体。该装置包括等离子体形成室，其包括由一组由电介质材料组成的内部室壁限定的空腔。该装置还包括由RF产生装置产生的大气等离子体，大气等离子体从空腔的第一端突出以清洁衬底。

9. 发明申请

WO2004012221A2 METHOD FOR ADJUSTING VOLTAGE ON A POWERED FARADAY SHIELD 审中-公开
标题翻译：用于调节电源电压的方法
公开(公告)号：WO2004012221A2
公开(公告)日：2004-02-05
申请号：PCT/US2003/023304
申请日：2003-07-23
申请人： LAM RESEARCH CORPORATION , LOHOKARE, Shrikant, P , KUTHI, Andras , BAILEY, Andrew, D., III
发明人： LOHOKARE, Shrikant, P , KUTHI, Andras , BAILEY, Andrew, D., III
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01J37/32174 , H01J37/32431 , H01J37/32623
摘要： An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mitigate deposition of non-volatile reaction products that adversely affect an etching process. The appropriate voltage for a particular etching process or step is applied to the Faraday shield by simply adjusting a tuning capacitor. It is not necessary to mechanically reconfigure the etching apparatus to adjust the Faraday shield voltage.
摘要翻译：提供了一种用于调整施加到电感耦合等离子体蚀刻装置的法拉第屏蔽的电压的装置和方法。适当的电压容易且可变地施加到法拉第屏蔽，使得可以控制等离子体的溅射以防止和减轻不利地影响蚀刻工艺的非挥发性反应产物的沉积。通过简单地调整调谐电容器，将特定蚀刻工艺或步骤的适当电压施加到法拉第屏蔽。不需要机械地重新配置蚀刻装置来调整法拉第屏蔽电压。

10. 发明申请

WO2003012821A3 METHOD AND APPARATUS FOR PRODUCING UNIFORM PROCESS RATES 审中-公开
公开(公告)号：WO2003012821A3
公开(公告)日：2003-02-13
申请号：PCT/US2002/023092
申请日：2002-07-18
申请人： LAM RESEARCH CORPORATION , WILCOXSON, Mark, H. , BAILEY, III, Andrew, D. , KUTHI, Andras , SMITH, Michael, G.R. , SCHOEPP, Alan, M.
发明人： WILCOXSON, Mark, H. , BAILEY, III, Andrew, D. , KUTHI, Andras , SMITH, Michael, G.R. , SCHOEPP, Alan, M.
IPC分类号： H01J37/32
摘要： An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn (704) with a first turn gap (1112); a second turn (708) with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector (1132) electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

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