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1. 发明申请

WO2006074050A2 ELECTRICALLY ENHANCING THE CONFINEMENT OF PLASMA 审中-公开
标题翻译：电动增强等离子体制约
公开(公告)号：WO2006074050A2
公开(公告)日：2006-07-13
申请号：PCT/US2005/047385
申请日：2005-12-29
申请人： LAM REASEARCH CORPORATION , KUTHI, Andras , KIM, Jisoo , LENZ, Eric , DHINDSA, Rajindar , LI, Lumin , SADJADI, Reza
发明人： KUTHI, Andras , KIM, Jisoo , LENZ, Eric , DHINDSA, Rajindar , LI, Lumin , SADJADI, Reza
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , Y10S156/915
摘要： A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.
摘要翻译：真空等离子体处理器包括具有接地壁和出口的室。等离子体在与壁和出口间隔开的室区域中以第一RF频率激发。结构将等离子体限制在该区域上，同时使气体能够从该区域流出到出口。连接到限制结构的第二频率的RF电力导致约束结构处于不同于地面的电位，以增加等离子体和限制结构之间的护套尺寸，并增加限制结构的有效性。该区域包括通过串联谐振到第一频率的电路连接到地的电极，并且包括护套的电容。

2. 发明申请

WO2008008259A3 APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL 审中-公开
公开(公告)号：WO2008008259A3
公开(公告)日：2008-01-17
申请号：PCT/US2007/015509
申请日：2007-07-06
申请人： LAM RESEARCH CORPORATION , KEIL, Douglas , LI, Lumin , SADJADI, Reza , HUDSON, Eric , LENZ, Eric , DHINDSA, Rajinder
发明人： KEIL, Douglas , LI, Lumin , SADJADI, Reza , HUDSON, Eric , LENZ, Eric , DHINDSA, Rajinder
IPC分类号： C23C16/00
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.

3. 发明申请

WO2005020264A3 MULTIPLE FREQUENCY PLASMA ETCH REACTOR 审中-公开
公开(公告)号：WO2005020264A3
公开(公告)日：2005-03-03
申请号：PCT/US2004/027064
申请日：2004-08-20
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , SADJADI, Reza, S., M. , KOZAKEVICH, Felix , TRUSSELL, Dave , LI, Lumin , LENZ, Eric , RUSU, Camelia , SRINIVASAN, Mukund , EPPLER, Aaron , TIETZ, Jim , MARKS, Jeffrey
发明人： DHINDSA, Rajinder , SADJADI, Reza, S., M. , KOZAKEVICH, Felix , TRUSSELL, Dave , LI, Lumin , LENZ, Eric , RUSU, Camelia , SRINIVASAN, Mukund , EPPLER, Aaron , TIETZ, Jim , MARKS, Jeffrey
IPC分类号： H01L21/311
摘要： A workpiece (18) is processed with a plasma (8) in a vacuum plasma processing chamber (10) by exciting the plasma at several frequencies (51, 52, 54, 56, 58), such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes top central (14, 36, 36a) and bottom electrodes (13, 16) and a peripheral top (42) and/or bottom electrode (34) arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation ftequencies to the exclusion of other frequencies. Controller 24 is employed to direct parameter control of various motors (M), valves (V), frequencies (58), power (59), temperature control means (25, 45) and set points (50).

4. 发明申请

WO2005112093A2 GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES 审中-公开
标题翻译：具有快速气体切换能力的气体分配系统
公开(公告)号：WO2005112093A2
公开(公告)日：2005-11-24
申请号：PCT/US2005/013582
申请日：2005-04-22
申请人： LAM RESEARCH CORPORATION , HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric , DHINDSA, Rajinder , SADJADI, Reza
发明人： HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric , DHINDSA, Rajinder , SADJADI, Reza
IPC分类号： H01L21/306
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。气体分配系统可以包括气体供应部分，流量控制部分和切换部分。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

5. 发明申请

WO2007040958A3 ELECTROSTATIC CHUCK ASSEMBLY WITH DIELECTRIC MATERIAL AND/OR CAVITY HAVING VARYING THICKNESS, PROFILE AND/OR SHAPE, METHOD OF USE AND APPARATUS INCORPORATING SAME 审中-公开
公开(公告)号：WO2007040958A3
公开(公告)日：2007-04-12
申请号：PCT/US2006/036110
申请日：2006-09-15
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , LENZ, Eric , LI, Lumin , KOZAKEVICH, Felix
发明人： DHINDSA, Rajinder , LENZ, Eric , LI, Lumin , KOZAKEVICH, Felix
IPC分类号： H01H23/00
摘要： An electrostatic chuck assembly (100) having a dielectric material (108) and/or having a cavity (106) with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support (102) and an electrostatic chuck ceramic layer (104). A dielectric layer (108) or insert is located between the conductive support (102) and an electrostatic chuck ceramic layer.

6. 发明申请

WO2003015123A3 DUAL FREQUENCY PLASMA ETCH REACTOR WITH INDEPENDENT PLASMA DENSITY/CHEMISTRY AND ION ENERGY CONTROL 审中-公开
公开(公告)号：WO2003015123A3
公开(公告)日：2003-02-20
申请号：PCT/US2002/025223
申请日：2002-08-08
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , SRINIVASAN, Mukund , LENZ, Eric , LI, Lumin
发明人： DHINDSA, Rajinder , SRINIVASAN, Mukund , LENZ, Eric , LI, Lumin
IPC分类号： H01J37/32
摘要： A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources, The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.

7. 发明申请

WO2003015123A2 DUAL FREQUENCY PLASMA ETCH REACTOR WITH INDEPENDENT PLASMA DENSITY/CHEMISTRY AND ION ENERGY CONTROL 审中-公开
标题翻译：具有独立等离子体密度/化学和离子能量控制的双频等离子体刻蚀反应器
公开(公告)号：WO2003015123A2
公开(公告)日：2003-02-20
申请号：PCT/US2002/025223
申请日：2002-08-08
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , SRINIVASAN, Mukund , LENZ, Eric , LI, Lumin
发明人： DHINDSA, Rajinder , SRINIVASAN, Mukund , LENZ, Eric , LI, Lumin
IPC分类号： H01J37/32
CPC分类号： H01J37/32522 , H01J37/32082 , Y10S156/916
摘要： A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources, The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.
摘要翻译：用于处理工件的真空等离子体腔室包括用于与腔室中的气体电耦合并分别连接到第一和第二相对高频和低频RF源的第一和第二电极。腔室包括在一个参考电位和一个与壁隔开的等离子体限制区。连接到源极和电极的滤波器装置使得来自第一源的电流流到第一电极，防止电流从第一源到第二电极和第二源的大量流动，并且使来自第二源的电流能够到达流到第一和第二电极并防止电流从第二源流到第一源

8. 发明申请

WO2007094984A2 SEALED ELASTOMER BONDED Si ELECTRODES AND THE LIKE FOR REDUCED PARTICLE CONTAMINATION IN DIELECTRIC ETCH 审中-公开
标题翻译：密封弹性体粘结Si电极和类似于减少颗粒污染在电介质蚀刻
公开(公告)号：WO2007094984A2
公开(公告)日：2007-08-23
申请号：PCT/US2007/003008
申请日：2007-02-05
申请人： LAM RESEARCH CORPORATION , REN, Daxing , MAGNI, Enrico , LENZ, Eric , ZHOU, Ren
发明人： REN, Daxing , MAGNI, Enrico , LENZ, Eric , ZHOU, Ren
CPC分类号： H01J37/32532 , H01J37/32009 , Y10T156/10
摘要： An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.
摘要翻译：一种用于半导体衬底加工的等离子体反应室的电极组件，具有具有接合面的背衬构件，具有一侧下表面的内电极和另一侧的接合面，以及外电极，一侧和另一侧的接合表面。至少一个电极具有凸缘，该凸缘在另一个电极的下表面的至少一部分的下方延伸。

9. 发明申请

WO2005111268A3 APPARATUS INCLUDING SHOWERHEAD ELECTRODE AND HEATER FOR PLASMA PROCESSING 审中-公开
公开(公告)号：WO2005111268A3
公开(公告)日：2005-11-24
申请号：PCT/US2005/012221
申请日：2005-04-11
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , LENZ, Eric
发明人： DHINDSA, Rajinder , LENZ, Eric
IPC分类号： C23F1/00
摘要： A plasma processing apparatus (100) includes a heater (700) in thermal contact with a showerhead electrode (200), and a temperature controlled top plate (800) in thermal contact with the heater (700) to maintain a desired temperature of the showerhead electrode (200) during semiconductor substrate processing. A gas distribution member (500) supplies a process gas and radio frequency (RF) power to the showerhead electrode (200).

10. 发明申请

WO2010138166A1 METHOD AND APPARATUS FOR PHYSICAL CONFINEMENT OF A LIQUID MENISCUS OVER A SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于液晶显示器半导体波形的物理配置的方法和装置
公开(公告)号：WO2010138166A1
公开(公告)日：2010-12-02
申请号：PCT/US2010/001495
申请日：2010-05-18
申请人： LAM RESEARCH CORPORATION , MAGNI, Enrico , LENZ, Eric
发明人： MAGNI, Enrico , LENZ, Eric
IPC分类号： B08B3/00 , H01L21/00
CPC分类号： B23P17/04 , B08B3/08 , H01L21/67017 , H01L21/67051 , Y10T29/494
摘要： Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a first and a second chemical head that are disposed to cover at least a portion of a top and an underside surface of the semiconductor wafer. Each of the first and the second chemical heads include an angled inlet conduit at a leading edge of the respective chemical heads to deliver liquid chemistry into a pocket of meniscus in a single phase. The pocket of meniscus is defined over the portion of the top and underside surface of the semiconductor wafer covered by the chemical heads and is configured to receive and contain the liquid chemistry applied to the surface of the semiconductor wafer as a meniscus. A step is formed at a leading edge of the first and second chemical heads along an outer periphery of the pocket of meniscus to substantially confine the meniscus of the liquid chemistry within the pocket of meniscus. The step covers at least a portion of the pocket of meniscus and the step's height is sufficient to preserve confinement characteristic of the meniscus. An inner return conduit is defined within the pocket of meniscus at a trailing edge of the respective chemical heads and is used to remove the liquid chemistry from the surface of the semiconductor wafer in a single phase after the cleaning process.
摘要翻译：用于物理限制施加在半导体晶片上的液体介质的装置，方法和系统包括设置成覆盖半导体晶片的顶表面和下表面的至少一部分的第一和第二化学头。第一和第二化学头中的每一个包括在各化学头的前缘处的成角度的入口导管，以将液体化学物质输送到单相中的弯液面袋中。半月板的凹槽被限定在由化学头覆盖的半导体晶片的顶表面和下表面的部分上，并且被配置为接收并容纳施加到半导体晶片的表面的液体化学物质作为弯液面。在第一和第二化学头的前缘沿着弯液面的凹槽的外周形成台阶，以将液体化学物质的弯液面基本上限制在弯液面的凹槽中。该步骤覆盖半月板袋的至少一部分，台阶的高度足以保持弯液面的限制特性。内部返回导管限定在各个化学头的后缘处的弯液面的凹穴内，并且用于在清洁过程之后以单相从半导体晶片的表面去除液体化学物质。

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