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    • 1. 发明申请
    • SYNTHESIS OF METAL OXIDES BY REACTIVE CATHODIC ARC EVAPORATION
    • 通过反应性阴极弧蒸发合成金属氧化物
    • WO2011103955A1
    • 2011-09-01
    • PCT/EP2011/000383
    • 2011-02-10
    • OERLIKON TRADING AG, TRÜBBACHRAMM, JürgenWIDRIG, Benno
    • RAMM, JürgenWIDRIG, Benno
    • C23C14/00C23C14/08C23C14/32
    • C23C14/325C23C14/0021C23C14/08C23C14/081C23C14/083
    • This application relates to the reactive cathodic arc evaporation of the composite Al-Cr targets and the nucleation and phase formation of the synthesized Al-Cr-O layers. The oxygen partial pressure and the pulsed operation of the arc current influence the formation of intermetallic phases and solid solutions at the target surface. The nucleation of the ternary oxides at the substrate site appears to be, to some extent, controllable by the intermetallics or solid solutions formed at the target surface. A specific nucleation process at substrate site can therefore be induced by the free choice of target composition in combination with the partial pressure of the oxygen reactive gas. It also allows the control over the oxide island growth at the target surface which occurs occasionally at higher oxygen partial pressure. This is supported by the X-ray diffraction analysis of the layers as well as of the target surface.
    • 本申请涉及复合Al-Cr靶的反应阴极电弧蒸发和合成的Al-Cr-O层的成核和相形成。 氧分压和电弧电流的脉冲操作影响目标表面上金属间相和固溶体的形成。 在基底部位的三元氧化物的成核似乎在某种程度上可以通过在靶表面形成的金属间化合物或固溶体来控制。 因此,可以通过与氧反应气体的分压结合的目标组合物的自由选择来诱导底物位置处的特定成核过程。 它还允许控制目标表面上的氧化物岛生长偶尔在更高的氧分压下发生。 这通过层以及目标表面的X射线衍射分析来支持。
    • 2. 发明申请
    • PERMEATION BARRIER LAYER
    • WO2009092816A3
    • 2009-07-30
    • PCT/EP2009/050820
    • 2009-01-26
    • OERLIKON TRADING AG, TRÜBBACHRAMM, Jürgen
    • RAMM, Jürgen
    • C23C14/08
    • The method for manufacturing a hydrogen permeation barrier comprises the steps of a) depositing on a substrate (SUB) a layer system (LS) comprising at least one layer (L1,L2,L3); characterized in that step a) comprises the step of b) depositing at least one hydrogen barrier layer (HPBL) comprising an at least ternary oxide. The apparatus comprises a sealable volume and a wall forming at least a portion of a boundary limiting said volume, wherein said wall comprises a hydrogen permeation barrier comprising a layer system (LS) comprising at least one layer, wherein said layer system comprises at least one hydrogen barrier layer (HPBL) comprising an at least ternary oxide. Preferably, said at least ternary oxide is substantially composed of Al, Cr and 0, and said depositing said at least one hydrogen barrier layer (HPBL) is carried out using a physical vapor deposition method, in particular a cathodic arc evaporation method. Preferably, step a) comprises depositing on said substrate at least one of : an adhesion layer (AdhL), a hydrogen storage layer (HStL), a protective layer (ProtL), in particular a thermal barrier layer (ThBL), a diffusion barrier layer (DBL), an oxidation barrier layer (OxBL), a chemical barrier layer (ChBL), a wear resistance layer (WRL). Excellent hydrogen permeation barrier properties can be achieved, and the layer system can be tailored as required by an envisaged application.
    • 4. 发明申请
    • ENTSCHICHTUNGSVERFAHREN FÜR HARTE KOHLENSTOFFSCHICHTEN
    • 去层用于硬质涂层
    • WO2012167886A1
    • 2012-12-13
    • PCT/EP2012/002305
    • 2012-05-31
    • OERLIKON TRADING AG, TRÜBBACHRAMM, JürgenWIDRIG, Beno
    • RAMM, JürgenWIDRIG, Beno
    • C23G5/00
    • C23G5/00
    • Verfahren zum Entschichten von Kohlenstoffschichten, insbesondere von ta-C Schichten von Substratoberflächen von Werkzeugen und Bauteilen. Das zu entschichtende Substrat wird demgemäß auf einen Substrathalter in einer Vakuumkammer angeordnet, die Vakuumkammer wird mit mindestens einem den Abtransport von Kohlenstoff in Gasform unterstützendem Reaktivgas beschickt und eine Niederspannungsplasmaentladung wird in der Vakuumkammer zur Anregung des Reaktivgases und somit zur Unterstützung der erforderlichen chemischen Reaktion bzw. Reaktionen zum Entschichten der beschichteten Substrat erzeugt. Dabei ist die Niederspannungsplasmaentladung eine Gleichstrom-Niedervoltbogenentladung, die zu entschichtenden Substratoberflächen im Wesentlichen werden ausschließlich mit Elektronen beschossen und als Reaktivgas werden Sauerstoff, Stickstoff und Wasserstoff verwendet.
    • 一种用于汽提的碳层,特别是工具和组件基板表面的TA-C层的方法。 的被剥离基板被相应配置的基板支架上在真空室中,真空室中的至少一种加入气态形式支持反应气体中去除碳和低电压等离子放电在所述真空室的反应气体的激发,并因此支持所需的化学反应或 创建用于经涂覆的基材的剥离反应。 低压等离子体放电为直流低电压电弧放电,与电子轰击被剥离仅基底表面并基本上作为反应气体,氧,氮和氢被使用。