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1. 发明申请

WO2012039754A2 LIGHT EMITTING AND LASING SEMICONDUCTOR METHODS AND DEVICES 审中-公开
标题翻译：发光和激光半导体方法和器件
公开(公告)号：WO2012039754A2
公开(公告)日：2012-03-29
申请号：PCT/US2011/001616
申请日：2011-09-20
申请人： QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. , WALTER, Gabriel
发明人： WALTER, Gabriel
IPC分类号： H01L29/737 , H01L33/04
CPC分类号： H01L33/0025 , H01S5/06203 , H01S5/06226 , H01S5/183 , H01S5/3407 , H01S5/3415 , H01S2304/04
摘要： The invention is applicable for use in conjunction with a light-emitting semiconductor structure that includes a semiconductor active region of a first conductivity type containing a quantum size region and having a first surface adjacent a semiconductor input region of a second conductivity type that is operative, upon application of electrical potentials with respect to the active and input regions, to produce light emission from the active region. A method is provided for enhancing operation of the light-emitting semiconductor structure, including the following steps: providing a semiconductor output region that includes a semiconductor auxiliary layer of the first conductivity type adjacent a second surface, which opposes the first surface of the active region, and providing the auxiliary layer as a semiconductor material having a diffusion length for minority carriers of the first conductivity type material that is substantially shorter than the diffusion length for minority carriers of the semiconductor material of the active region.
摘要翻译：本发明适用于与发光半导体结构一起使用，所述发光半导体结构包括第一导电类型的半导体有源区域，所述第一导电类型的半导体有源区域包含量子尺寸区域并且具有邻近半导体输入区域的第一表面，第二导电类型，其在施加关于有源区和输入区的电势时操作以产生来自有源区的光发射。提供了一种用于增强发光半导体结构的操作的方法，该方法包括以下步骤：提供半导体输出区域，该半导体输出区域包括与第二表面相邻的第一导电类型的半导体辅助层，该第二表面与有源区域的第一表面相对并且提供辅助层作为具有用于第一导电类型材料的少数载流子的扩散长度的半导体材料，该半导体材料基本上短于有源区域的半导体材料的少数载流子的扩散长度

2. 发明申请

WO2014043089A1 METHOD AND APPARATUS FOR OPTICAL COUPLING AND OPTO-ELECTRONIC CONVERSION 审中-公开
标题翻译：光耦合和光电转换的方法和装置
公开(公告)号：WO2014043089A1
公开(公告)日：2014-03-20
申请号：PCT/US2013/058946
申请日：2013-09-10
申请人： QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. , WALTER, Gabriel
发明人： WALTER, Gabriel
IPC分类号： H04B10/2575
CPC分类号： G02B6/4212 , G02B6/4204 , H04B10/25 , H04B10/801
摘要： A method for converting an optical signal, propagating in an optical fiber, into an electrical output signal, including the following steps: providing an optical interface having opposing flat surfaces and being formed of a material having a refractive index that is substantially higher than the refractive index of the optical fiber; disposing a first of the opposing flat surfaces of the interface adjacent an output end of the optical fiber, and disposing a photodetector adjacent a second of the opposing flat surfaces of the interface; whereby the optical signal is coupled into the photodetector and converted by the photodetector into an electrical output signal.
摘要翻译：一种用于将在光纤中传播的光信号转换为电输出信号的方法，包括以下步骤：提供具有相对平坦表面的光学界面，并且由具有基本上高于折射率的折射率的材料形成光纤索引; 将所述界面的相对的平坦表面中的第一平面布置在所述光纤的输出端附近，并且将所述光电检测器设置在所述界面的相对的平坦表面中的第二平面附近; 由此光信号耦合到光电检测器中并由光电检测器转换成电输出信号。

3. 发明申请

WO2014022724A1 DUAL MODE TILTED-CHARGE DEVICES AND METHODS 审中-公开
标题翻译：双模式倾斜充电装置和方法
公开(公告)号：WO2014022724A1
公开(公告)日：2014-02-06
申请号：PCT/US2013/053319
申请日：2013-08-01
申请人： QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. , WALTER, Gabriel
发明人： WALTER, Gabriel
IPC分类号： H01L27/14 , H01L27/30
CPC分类号： H01L33/002 , B82Y10/00 , H01L29/0817 , H01L29/1004 , H01L29/122 , H01L29/205 , H01L29/7371 , H01L33/0016 , H01L33/04 , H01L33/06
摘要： A method for providing and operating a device in a first mode as a light- emitting transistor and in a second mode as a high speed electrical transistor, including the following steps: providing a semiconductor base region of a first conductivity type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, a quantum size region; providing, in the base region between the quantum size region and the collector region, a carrier transition region; applying a controllable bias voltage with respect to the base and collector regions to control depletion of carriers in at least the carrier transition region; and applying signals with respect to the emitter, base, and collector regions to operate the device as either a light-emitting transistor or a high speed electrical transistor, depending on the controlled bias signal.
摘要翻译：一种用于以第一模式提供和操作作为发光晶体管并在第二模式中作为高速电晶体管的装置的方法，包括以下步骤：在半导体发射极和集电极之间提供第一导电类型的半导体基极区域第二半导体类型的区域; 在碱性区域中提供量子尺寸区域; 在量子尺寸区域和集电极区域之间的基极区域中提供载流子过渡区域; 对所述基极集电极区域和所述集电极区域施加可控偏置电压以控制至少所述载流子过渡区域中载流子的耗尽; 并且相对于发射极，基极和集电极区域施加信号，以根据受控的偏置信号将器件操作为发光晶体管或高速电晶体管。

4. 发明申请

WO2013032526A1 OPTO-ELECTRONIC CIRCUITS AND TECHNIQUES 审中-公开
标题翻译： OPTO-ELECTRONIC电路和技术
公开(公告)号：WO2013032526A1
公开(公告)日：2013-03-07
申请号：PCT/US2012/000377
申请日：2012-08-31
申请人： QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. , WALTER, Gabriel , LAM, Poh, Lian
发明人： WALTER, Gabriel , LAM, Poh, Lian
IPC分类号： H05B37/02 , H01S5/00 , H05B33/08
CPC分类号： B82Y20/00
摘要： A hybrid circuit for producing optical signals in response to electrical energizing signals, including: a tilted charge light-emitting device having an electrical input port and an optical output port, the device having an optical output response which is a function of input frequency; and an input interface circuit coupled with the electrical input port of the device, and having a transfer function substantially proportional to an inverse of the optical output response of the device; whereby application of the electrical energizing signals to the input interface circuit is operative to produce optical signals from the output optical port of the device. The input interface circuit includes a passive RLC circuit having a transfer function characterized by a region of increasing amplitude versus frequency.
摘要翻译：一种用于响应于电激励信号产生光信号的混合电路，包括：具有电输入端口和光输出端口的倾斜电荷发光器件，该器件具有作为输入频率的函数的光输出响应; 以及与设备的电输入端口耦合的输入接口电路，并且具有与设备的光输出响应的倒数基本成比例的传递函数; 由此将电激励信号施加到输入接口电路可操作以从设备的输出光端口产生光信号。输入接口电路包括具有以幅度对频率增加的区域为特征的传递函数的无源RLC电路。

5. 发明申请

WO2011056233A2 HIGH SPEED COMMUNICATION 审中-公开
标题翻译：高速通信
公开(公告)号：WO2011056233A2
公开(公告)日：2011-05-12
申请号：PCT/US2010/002920
申请日：2010-11-08
申请人： QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. , WALTER, Gabriel
发明人： WALTER, Gabriel
IPC分类号： H04B3/54 , H04B10/12
CPC分类号： H04B10/12 , H04B10/2504 , H04B10/25759
摘要： The disclosure has application for use in establishing a communication link between a first location and a second location, the first location having an electrical driver circuit that receives input data to be communicated, and the second location having an electrical receiver circuit for producing output data representative of the input data. The method includes the following steps: providing a tilted charge light emitting device at the first location and coupled with the driver circuit such that the light produced by the tilted charge light- emitting device is a function of the input data; providing an optical fiber between the first and second locations; coupling light from the tilted charge light emitting device into the optical fiber; and providing, at the second location, a photodetector coupled with the optical fiber and with the receiver circuit; whereby electrical signals representative of the input data are output from the receiver circuit.
摘要翻译：本公开具有用于建立第一位置和第二位置之间的通信链路的应用，第一位置具有接收要传送的输入数据的电驱动器电路，并且第二位置具有用于产生输出数据代表的电接收器电路的输入数据。该方法包括以下步骤：在第一位置处提供倾斜电荷发光器件，并与驱动器电路耦合，使得由倾斜电荷发光器件产生的光是输入数据的函数; 在所述第一和第二位置之间提供光纤; 将来自倾斜电荷发光器件的光耦合到光纤中; 以及在所述第二位置处提供与所述光纤耦合的光电检测器和所述接收器电路; 从而从接收器电路输出表示输入数据的电信号。

6. 发明申请

WO2010080694A2 LIGHT EMITTING AND LASING SEMICONDUCTOR DEVICES AND METHODS 审中-公开
标题翻译：发光和激光半导体器件和方法
公开(公告)号：WO2010080694A2
公开(公告)日：2010-07-15
申请号：PCT/US2010/000027
申请日：2010-01-07
申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS , QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. , WALTER, Gabriel , HOLONYAK, Nick , FENG, Milton
发明人： WALTER, Gabriel , HOLONYAK, Nick , FENG, Milton
IPC分类号： H01S5/00 , H01S5/30
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/18311 , H01S5/3412 , H01S5/34313
摘要： A semiconductor light emitting device, including: a heterojunction bipolar light-emitting transistor having a base region between emitter and collector regions; emitter, base, and collector electrodes for coupling electrical signals with the emitter, base, and collector regions, respectively; and a quantum size region in the base region; the base region including a first base sub-region on the emitter side of the quantum size region, and a second base sub-region on the collector side of the quantum size region; and the first and second base sub- regions having asymmetrical band structures. Also disclosed is a method for producing light emission from a two-terminal semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type, and a second semiconductor junction between the base region and a drain region; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure.
摘要翻译：一种半导体发光器件，包括：具有发射极和集电极区域之间的基极区域的异质结双极型发光晶体管; 发射极，基极和集电极，用于将电信号分别与发射极，基极和集电极区域耦合; 和基极区域中的量子尺寸区域; 所述基区包括所述量子尺寸区域的发射极侧的第一基极子区域和所述量子尺寸区域的集电极侧的第二基极子区域; 并且第一和第二基本子区域具有不对称的带结构。还公开了一种用于从二端子半导体结构产生发光的方法，包括以下步骤：提供包括第一导电类型的发射极区域和第二导电类型的基极区域之间的第一半导体结的半导体结构与第一导电类型的相反，以及在基极区域和漏极区域之间的第二半导体结; 在基区内提供显示量子尺寸效应的区域; 提供与发射极区域耦合的发射极; 提供与所述基极区域和所述漏极区域耦合的基极/漏极电极; 并且相对于发射极和基极/漏极施加信号以获得来自半导体结构的发光。

7. 发明申请

WO2014194123A1 OPTICAL RECEIVER METHOD AND APPARATUS 审中-公开
标题翻译：光接收机方法和装置
公开(公告)号：WO2014194123A1
公开(公告)日：2014-12-04
申请号：PCT/US2014/040071
申请日：2014-05-29
申请人： QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. , QEOS, INC.
发明人： CHIN, Teyo, Tuan , WALTER, Gabriel
IPC分类号： G02B6/42
CPC分类号： H01L31/18 , G02B6/423 , G02B6/4274 , G02B6/4292 , G02B6/4295 , H01L31/0203 , H01L2224/48227 , H01L2224/48465 , Y10T29/41 , H01L2924/00
摘要： A method for making an optical receiver assembly that can receive optical signals via an input optical fiber and can generate output electrical signals, including the following steps: providing an open-ended cavity formed of insulating material, such as a ceramic, comprising a base, peripheral sidewalls, and an open end opposite the base, the outside surface of the base defining a first surface and the inside surface of the base defining a second surface; disposing a first conductive region on a portion of the first surface and a second conductive region on a portion of the second surface.
摘要翻译：一种用于制造能够经由输入光纤接收光信号并且可以产生输出电信号的光接收器组件的方法，包括以下步骤：提供由诸如陶瓷的绝缘材料形成的开口腔，所述绝缘材料包括基底，周边侧壁和与基部相对的开口端，基部的外表面限定第一表面，并且基部的内表面限定第二表面; 在所述第一表面的一部分上设置第一导电区域和在所述第二表面的一部分上设置第二导电区域。

8. 发明申请

WO2014004375A1 METHOD AND APPARATUS FOR ALIGNING OF OPTO-ELECTRONIC COMPONENTS 审中-公开
标题翻译：用于对准电子元件的方法和装置
公开(公告)号：WO2014004375A1
公开(公告)日：2014-01-03
申请号：PCT/US2013/047318
申请日：2013-06-24
申请人： QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. , WALTER, Gabriel , RAHMAT, Idris , LEE, Huan, Sin , TEYO, Tuan, Chin
发明人： WALTER, Gabriel , RAHMAT, Idris , LEE, Huan, Sin , TEYO, Tuan, Chin
IPC分类号： G02B6/46 , G02B27/62
CPC分类号： G02B6/4231 , G02B6/32 , G02B6/4224 , G02B6/4292 , G02B27/62
摘要： A method for aligning a ferrule-mounted optical fiber with the optical axis of an electro-optical device, including the following steps: providing an alignment marking with respect to the device in relation to the optical axis; providing an annular receptacle and a tubular alignment pin with a central passageway, having its proximal end slidably fitted in the annulus of the receptacle; aligning the proximal end of the alignment pin with the alignment marking; securing the device to the receptacle; removing the alignment pin from the receptacle; and inserting the ferrule-mounted optical fiber into the receptacle.
摘要翻译：一种将套圈安装的光纤与电光装置的光轴对准的方法，包括以下步骤：相对于光轴提供相对于装置的对准标记; 提供具有中心通道的环形容座和管状对准销，其中其近端可滑动地装配在容器的环空中; 将对准销的近端与对准标记对准; 将设备固定到插座上; 从定位销移除定位销; 并将套圈安装的光纤插入插座中。

9. 发明申请

WO2010120372A2 LIGHT EMITTING SEMICONDUCTOR METHODS AND DEVICES 审中-公开
标题翻译：发光半导体方法和器件
公开(公告)号：WO2010120372A2
公开(公告)日：2010-10-21
申请号：PCT/US2010/001133
申请日：2010-04-16
申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS , QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. , WALTER, Gabriel , FENG, Milton , HOLONYAK, Nick , THEN, Han, Wui , WU, Chao-hsin
发明人： WALTER, Gabriel , FENG, Milton , HOLONYAK, Nick , THEN, Han, Wui , WU, Chao-hsin
IPC分类号： H01S3/0941 , H01S3/00
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/0035 , H01S5/0425 , H01S5/18311 , H01S5/3095 , H01S5/34313
摘要： A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween. In a further embodiment lateral scaling is used to control device speed for high frequency operation.
摘要翻译：一种从提高效率的二端子半导体器件产生发光的方法，包括以下步骤：提供包括半导体漏极区域的分层半导体结构，该半导体漏极区域包括至少一个漏极层，设置在漏极区域上的半导体基极区域，至少一个基极层，以及设置在所述基极区域的一部分上并且包括发射极台面的半导体发射极区域，所述发射极台面包括至少一个发射极层; 在碱性区域中提供至少一个呈现量子效应的区域; 提供在所述基极区域的暴露表面上具有第一部分的基极/漏电极，以及与所述漏极区域耦合的另一部分，并且在所述发射极区域的表面上提供发射极; 施加相对于基极/漏极和发射极电极的信号以获得从基极区域发出的光; 以及在其间的区域中配置基极/漏极和发射极用于电压分布的实质均匀性。在另一实施例中，横向缩放用于控制高频操作的设备速度。

10. 发明申请

WO2013074496A1 OPTICAL TILTED CHARGE DEVICES AND METHODS 审中-公开
标题翻译：光学倾斜装置和方法
公开(公告)号：WO2013074496A1
公开(公告)日：2013-05-23
申请号：PCT/US2012/064778
申请日：2012-11-13
申请人： QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. , WALTER, Gabriel
发明人： WALTER, Gabriel
IPC分类号： H01L29/737 , H01L29/778 , H01L33/00
CPC分类号： H01L33/0016 , H01L33/06
摘要： A method for producing optical signals with improved efficiency, including the following steps: providing a layered semiconductor structure that includes a substrate, a semiconductor collector region of a first conductivity type, a semiconductor base region of a second conductivity type disposed on the collector region, and a semiconductor emitter region of the first semiconductor type disposed as a mesa over a portion of a surface of the base region; providing, in the base region, at least one region exhibiting quantum size effects; providing collector, base, and emitter electrodes, respectively coupled with the collector, base and emitter regions; providing a tunnel barrier layer over at least the exposed portion of the surface of the base region; and applying signals with respect to the collector, base, and emitter electrodes to produce optical signals from the base region. Also disclosed is an optical tilted charge device with an InGaAsN quantum well.
摘要翻译：一种提高效率的光信号的制造方法，包括以下步骤：提供包括基板，第一导电类型的半导体集电极区域，设置在集电极区域上的第二导电类型的半导体基极区域的分层半导体结构，以及第一半导体类型的半导体发射极区域，其设置在所述基极区域的表面的一部分上作为台面; 在碱性区域中提供至少一个呈现量子效应的区域; 提供分别与集电极，基极和发射极区耦合的集电极，基极和发射极; 在至少所述基部区域的所述表面的暴露部分上提供隧道势垒层; 并且相对于集电极，基极和发射极施加信号以从基极区域产生光信号。还公开了具有InGaAsN量子阱的光学倾斜的充电器件。

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