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1. 发明申请

WO2013011112A1 METHOD AND APPARATUS FOR DETERMINING A CRITICAL DIMENSION VARIATION OF A PHOTOLITHOGRAPHIC MASK 审中-公开
标题翻译：用于确定光刻胶掩模的关键尺寸变化的方法和装置
公开(公告)号：WO2013011112A1
公开(公告)日：2013-01-24
申请号：PCT/EP2012/064249
申请日：2012-07-20
申请人： CARL ZEISS SMS LTD. , PFORR, Rainer
发明人： PFORR, Rainer
IPC分类号： G03F1/00 , G03F1/84 , G03F7/20
CPC分类号： H01L22/24 , G03F1/84 , G03F7/70625
摘要： The invention relates to a method for determining a critical dimension variation of a photolithographic mask which comprises (a) using layout data of the photolithographic mask to determine at least two sub-areas of the photolithographic mask, each sub-area comprising a group of features, (b) measuring a distribution of a transmission of each sub-area, (c) determining a deviation of the transmission from a mean transmission value for each sub-area, (d) determining a constant specific for each sub-area, and (e) determining the critical dimension variation of the photolithographic mask by combining for each sub-area the deviation of the transmission and the sub-area specific constant.
摘要翻译：本发明涉及一种用于确定光刻掩模的临界尺寸变化的方法，其包括：（a）使用光刻掩模的布局数据来确定光刻掩模的至少两个子区域，每个子区域包括一组特征（b）测量每个子区域的传输分布，（c）确定所述传输的偏差与每个子区域的平均传输值，（d）确定每个子区域的常数，以及（e）通过对每个子区域组合透射的偏差和子区域特定常数来确定光刻掩模的临界尺寸变化。

2. 发明申请

WO0241076A3 PHOTOLITHOGRAPHIC MASK 审中-公开
标题翻译：光刻掩膜
公开(公告)号：WO0241076A3
公开(公告)日：2003-01-03
申请号：PCT/DE0104263
申请日：2001-11-14
申请人： INFINEON TECHNOLOGIES AG , GRIESINGER UWE , HENNIG MARIO , KNOBLOCH JUERGEN , PFORR RAINER , VORWERK MANUEL
发明人： GRIESINGER UWE , HENNIG MARIO , KNOBLOCH JUERGEN , PFORR RAINER , VORWERK MANUEL
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , H01L21/027 , G03F1/14
CPC分类号： G03F7/70441 , G03F1/29 , G03F7/70433
摘要： According to the invention, auxiliary openings (2) are allocated to the openings (1) on a mask which are to be transferred onto a wafer. Said auxiliary openings have a phase shifting characteristic of preferably between 160 DEG and 200 DEG in relation to the openings (1), as well as a cross-section which is less than the limit dimension (31) for the printing of the projection device, so that the auxiliary openings (2) themselves cannot be printed onto the wafer. At the same time, however, they strengthen the contrast of the aerial image of an associated insulated or semi-insulated opening (1) on the wafer in particular. According to one form of embodiment, the distance of the auxiliary openings (2) from the opening (1) is greater than the resolution limit of the projection device, the opening being less than the coherence length of the light used for projection. The effect of the auxiliary openings consists of the phase-related use of the optical proximity effect. If the auxiliary openings (2) are arranged in a preferred direction, this effect can be used on quadratic openings (1) on the mask to produce elliptic structures (1') on a wafer. The result is a considerable widening of the process window for the projection of substrate contacting planes onto a wafer.
摘要翻译：在掩模上的晶片上要传送开口（1）与辅助开口相关联的（2）。这些具有优选为160°至200℃底层相移特性相对于所述孔（1）之间，以及一个位于该投影装置的横截面（21）的打印的限制尺寸（31）下方，使得辅助开口（2）本身不将晶圆是geprintet。同时提高了空间像的对比度，特别是相关联的晶片上的绝缘或半绝缘的开口（1）。在一个实施例中，辅助开口（2）具有一个位于上述从开口（1）的投影装置的距离的分辨率极限，但其比用于投影的光的相干长度小。它们的作用是在光学邻近效应的相位相关的利用率，从而可以在掩模在正方形开口的晶片上产生椭圆结构（1“）设定在一个优选的方向上的辅助开口（2）当被利用（1）。其结果是在投影，特别Substratkontaktierungsebenen到晶片上的处理窗口的显著放大图。

3. 发明申请

WO2012013638A1 LITHOGRAPHIC TARGETS FOR UNIFORMITY CONTROL 审中-公开
标题翻译：用于均匀控制的平台目标
公开(公告)号：WO2012013638A1
公开(公告)日：2012-02-02
申请号：PCT/EP2011/062761
申请日：2011-07-25
申请人： CARL ZEISS SMS LTD. , PFORR, Rainer , ZVI, Guy Ben , DMITRIEV, Vladimir , GRAITZER, Erez
发明人： PFORR, Rainer , ZVI, Guy Ben , DMITRIEV, Vladimir , GRAITZER, Erez
IPC分类号： G03F7/20
CPC分类号： H01L22/12 , G03F1/38 , G03F1/44 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G06F17/50 , H01L21/68 , H01L21/681 , H01L21/682 , H01L22/20
摘要： A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition.
摘要翻译：提供了具有第一组图案和第二组图案的光掩模，其中第一组图案对应于要在晶片上制造的电路图案，并且第二组图案具有使得第二组图案不利于在第一曝光条件下使用基于第一组图案的光刻工艺产生的电路图案。基于在第一曝光条件下基于第一组图案的使用光刻处理产生的电路图案的第二组图案来确定光掩模的临界尺寸分布。

4. 发明申请

WO2006133729A1 METHOD AND SYSTEM FOR PHOTOLITHOGRAPHY 审中-公开
标题翻译：用于光刻技术的方法和系统
公开(公告)号：WO2006133729A1
公开(公告)日：2006-12-21
申请号：PCT/EP2005/006560
申请日：2005-06-17
申请人： INFINEON TECHNOLOGIES AG , PFORR, Rainer , HENNIG, Mario
发明人： PFORR, Rainer , HENNIG, Mario
IPC分类号： G03F7/20 , G02B5/20
CPC分类号： G02B5/205 , G03F7/7015 , G03F7/70191 , G03F7/70625
摘要： The invention relates to a method for photolithography. Further the invention relates to a system for photolithography. A transparent optical element in a region between a photo mask (10) and a light source (14) of a photolithographic apparatus (5) is provided having a plurality of attenuating elements (60) being arranged in accordance with a first intensity correction function. The first intensity correction function is calculated from variations of characteristic features sizes (50) of structural elements (54) of a resist pattern (20) as compared to the nominal values (42) of structural elements of a layout pattern (40). The variations of the characteristic features sizes are divided into a first contribution being associated with the photolithographic apparatus (5) and into a second contribution being associated with the photo mask (10).
摘要翻译：本发明涉及一种光刻方法。此外，本发明涉及一种用于光刻的系统。在光刻设备（5）的光掩模（10）和光源（14）之间的区域中设置有根据第一强度校正功能布置的多个衰减元件（60）的透明光学元件。与布局图案（40）的结构元件的标称值（42）相比，从抗蚀剂图案（20）的结构元件（54）的特征特征尺寸（50）的变化计算第一强度校正函数。特征特征尺寸的变化被分成与光刻设备（5）相关联的第一贡献，并分成与光掩模（10）相关联的第二贡献。

5. 发明申请

WO0140868A3 ALTERNATING PHASE MASK 审中-公开
标题翻译：交替相位掩模
公开(公告)号：WO0140868A3
公开(公告)日：2001-12-06
申请号：PCT/DE0004136
申请日：2000-11-22
申请人： INFINEON TECHNOLOGIES AG , FRIEDRICH CHRISTOPH , HEISSMEIER MICHAEL , MOUKARA MOLELA , GRIESINGER UWE , LUDWIG BURKHARD , PFORR RAINER
发明人： FRIEDRICH CHRISTOPH , HEISSMEIER MICHAEL , MOUKARA MOLELA , GRIESINGER UWE , LUDWIG BURKHARD , PFORR RAINER
IPC分类号： G03F1/30 , G03F1/00 , H01L21/027
CPC分类号： G03F1/30
摘要： The invention relates to an alternating phase mask (1) having a branched structure consisting of two opaque segments. Two transparent surfaces segments (5a, 5b) are arranged on both sides of said segments or the components thereof respectively. The surface segments are provided with phases that are displaced by 180 DEG +/- DELTA alpha , whereby DELTA alpha is not more than 25 DEG . The surface segments (5a, 5b) are separated by at least one transparent surface boundary segment (6) whose phase is situated between the phases of the adjacent surface segments (5a, 5b).
摘要翻译：本发明涉及具有由两个不透明段组成的分支结构的交替相位掩模（1）。在部分或其部分的两侧上布置两个透明表面部分（5a，5b），其具有相移180°+/-Δα的相位，其中Δα最大值为25°。表面部分（5a，5b）由至少一个透明表面边界部分（6）分开，其相位位于相邻表面部分（5a，5b）的相位之间。

6. 发明申请

WO2003054627A3 PHASENSCHIEBERMASKE 审中-公开
公开(公告)号：WO2003054627A3
公开(公告)日：2003-07-03
申请号：PCT/DE2002/004321
申请日：2002-11-25
申请人： INFINEON TECHNOLOGIES AG , HENNIG, Mario , KÖHLE, Roderick , KUNKEL, Gerhard , PFORR, Rainer , VOIGT, Ina
发明人： HENNIG, Mario , KÖHLE, Roderick , KUNKEL, Gerhard , PFORR, Rainer , VOIGT, Ina
IPC分类号： G03F1/00
摘要： Bei einer Phasenmaske (8) mit symmetrischen Strukturen (1, 2) zur Herstellung nahe aneinanderliegender Paare (5) von Strukturen (1', 2') auf einem Halbleiterwafer (9) wie beispielsweise Grabenkondensatorpaare für Speicherbausteine besitzen die Strukturen (1, 2) innerhalb des Paares gegeneinander einen Phasenhubunterschied von 180 °. Bei an der Auflösungsgrenze des Belichtungssystems liegenden Strukturdimensionen wird dadurch der Einfluss von Linsenaberrationen auf den dadurch entstehenden Rechts-Links-Linienbreitenunterschied reduziert. Ein Verfahren zur Herstellung der Strukturen (1', 2') auf dem Wafer (9) beinhaltet demn Schritt der Auswahl der Phasenzuordnung auf die rechte (2) oder linke Struktur (1) in Abhängigkeit vom Vorzeichen des Linienbreitenunterschiedes, wenn er unter Verwendung des gleichen Belichtungssystems ohne Phasenzuordnung gemessen wird.

7. 发明申请

WO03054627A2 PHASE SHIFTING MASK 审中-公开
标题翻译：相SLIDE MASK
公开(公告)号：WO03054627A2
公开(公告)日：2003-07-03
申请号：PCT/DE0204321
申请日：2002-11-25
申请人： INFINEON TECHNOLOGIES AG , HENNIG MARIO , KOEHLE RODERICK , KUNKEL GERHARD , PFORR RAINER , VOIGT INA
发明人： HENNIG MARIO , KOEHLE RODERICK , KUNKEL GERHARD , PFORR RAINER , VOIGT INA
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F1/30
摘要： The invention relates to a phase shifting mask (8) having symmetrical structures (1, 2) for the production of adjacent pairs (5) of structures (1', 2') on a semiconductor wafer (9), such as pairs of trench capacitors for memory modules, the structures (1, 2) inside the pair having a phase deviation difference of 180 DEG in relation to each other. The dimensions of the structures at the limit of resolution of the lighting system enable the influence of lens aberrations on the difference in line width created between the right and the left to be reduced. The invention also relates to a method for producing the structures (1', 2') on the wafer (9), consisting of a step in which the phase attribution to the right structure (2) or left structure (1) is selected according to the sign of the difference in line width when said difference is measured without phase attribution, using the same lighting system.
摘要翻译：在一个相位罩（8）具有对称结构（1，2）用于制备接近半导体晶片（9），在结构上的相互对置的对（5）（1”，2' ），诸如对于具有结构的存储器器件严重电容器对（1，2）该对对180°的彼此Phasenhubunterschied内。当躺在由透镜像差的影响的曝光系统结构的尺寸的分辨率极限降低到所得到的左右线宽差。一种用于结构的晶片（9）的制备（1”，2' ）的过程包括选择（2）或左结构（1），这取决于线的符号宽度差的权利，相位指定的demn步骤的使用时没有相位分配相同的成像系统被测量。

8. 发明申请

WO1994019723A1 RESOLUTION-ENHANCING OPTICAL PHASE STRUCTURE FOR A PROJECTION ILLUMINATION SYSTEM 审中-公开
标题翻译：分辨率 - 增强投影照明系统的光学相位结构
公开(公告)号：WO1994019723A1
公开(公告)日：1994-09-01
申请号：PCT/BE1993000009
申请日：1993-02-23
申请人： INTERUNIVERSITAIR MICRO-ELEKTRONICA , VAN DER HOVE, Luc, Maria, Maurits, Leopold , PFORR, Rainer , RONSE, Kurt, Germain, Martha , JONCKHEERE, Rik, Madga, Etienne
发明人： INTERUNIVERSITAIR MICRO-ELEKTRONICA
IPC分类号： G03F01/14
CPC分类号： G03F7/70191 , G03F1/26 , G03F1/50 , G03F7/70108 , G03F7/70125
摘要： In an optical projection system for use in projection printing of masks to wafers, comprising an illumination system including a light source and a mask positioned in the optical path of the illumination system, an optical phase structure is positioned in the optical path between the light source and the mask. The phase structure comprises a pattern of distributed transparent features having at least one refractive index, the transparent features of said phase structure being related in position and orientation to the opaque features of the mask.
摘要翻译：在用于向晶片投影印刷掩模的光学投影系统中，包括一个照明系统，该照明系统包括位于照明系统的光路中的光源和掩模，光学相位结构位于光源和面具。相位结构包括具有至少一个折射率的分布式透明特征的图案，所述相位结构的透明特征在位置和方向上与掩模的不透明特征相关。

9. 发明申请

WO1994001808A1 SYSTEM FOR DETECTING A LATENT IMAGE USING AN ALIGNMENT APPARATUS 审中-公开
标题翻译：用于使用对准设备检测最终图像的系统
公开(公告)号：WO1994001808A1
公开(公告)日：1994-01-20
申请号：PCT/BE1993000046
申请日：1993-07-01
申请人： INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW , PFORR, Rainer , WITTEKOEK, Steve , SELTMANN, Rolf
发明人： INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW
IPC分类号： G03F07/207
CPC分类号： G03F7/70641 , G03F7/70675
摘要： The system comprises a latent image detection device comprising an alignment device which uses non-actinic radiation (10) and which is intended for aligning the mask pattern with respect to the substrate (3) and is designed for detecting the measure of coincidence of a mask alignment feature and a substrate alignment feature (8). The alignment device is provided with a radiation-sensitive detection system (6) which is connected to an electronic signal processing circuit in which the amplitude of the radiation incident on the detection system is determined, which originates from a latent image, formed in the photosensitive layer, of a mask feature, in which a spatial frequency occurs which is approximately equal to the useful resolving power of the projection lens system and considerably greater than the resolving power of the alignment device.
摘要翻译：该系统包括潜像检测装置，其包括使用非光化辐射（10）并且旨在使掩模图案相对于基板（3）对准的对准装置，并且被设计用于检测掩模的重合度对准特征和衬底对准特征（8）。对准装置设置有辐射敏感检测系统（6），其连接到电子信号处理电路，其中确定入射在检测系统上的辐射的振幅，其来自形成在感光体中的潜像其中发生空间频率，其大致等于投影透镜系统的有用分辨能力并且远大于对准装置的分辨率。

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