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1. 发明申请

WO2013069873A1 ETCHANT COMPOSITION AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING THE SAME 审中-公开
标题翻译：蚀刻组合物和使用该薄膜晶体管制造薄膜晶体管的方法
公开(公告)号：WO2013069873A1
公开(公告)日：2013-05-16
申请号：PCT/KR2012/005540
申请日：2012-07-12
申请人： SAMSUNG DISPLAY CO., LTD. , DONGJIN SEMICHEM CO., LTD. , KIM, Bong-Kyun , PARK, Hong Sick , LEE, Wang Woo , PARK, Young Woo , CHOI, Shin Il , KIM, Sang-Woo , LEE, Ki-Beom , LEE, Dae-Woo , CHO, Sam-Young , CHOI, Jeong-Heon
发明人： KIM, Bong-Kyun , PARK, Hong Sick , LEE, Wang Woo , PARK, Young Woo , CHOI, Shin Il , KIM, Sang-Woo , LEE, Ki-Beom , LEE, Dae-Woo , CHO, Sam-Young , CHOI, Jeong-Heon
IPC分类号： C09K13/06 , H01L29/786
CPC分类号： H01L21/32134 , C09K13/06 , C09K13/08 , C09K13/10 , H01L21/465 , H01L29/7869
摘要： Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH 4 ) 2 )S 2 ,O 8 , an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, and water.
摘要翻译：提供了一种蚀刻剂组合物。根据本发明的示例性实施方案的蚀刻剂组合物包括过硫酸铵（（NH 4）2）S2，O 8，唑类化合物，水溶性胺化合物，含磺酸化合物，含硝酸盐化合物，和水。

2. 发明申请

WO2011115371A2 ETCHANT FOR METAL WIRING AND METHOD FOR MANUFACTURING METAL WIRING USING THE SAME 审中-公开
标题翻译：金属接线用金属接头及其制造金属接线方法
公开(公告)号：WO2011115371A2
公开(公告)日：2011-09-22
申请号：PCT/KR2011/001060
申请日：2011-02-17
申请人： SAMSUNG ELECTRONICS CO., LTD. , DONGJIN SEMICHEM CO., LTD. , SUH, Nam-Seok , HONG, Sun-Young , CHOUNG, Jong-Hyun , KIM, Bong-Kyun , PARK, Hong-Sick , SONG, Jean-Ho , LEE, Wang-Woo , KIM, Do-Won , KIM, Sang-Woo , SEO, Won-Guk , SHIN, Hyun-Cheol , LEE, Ki-Beom , CHO, Sam-Young
发明人： SUH, Nam-Seok , HONG, Sun-Young , CHOUNG, Jong-Hyun , KIM, Bong-Kyun , PARK, Hong-Sick , SONG, Jean-Ho , LEE, Wang-Woo , KIM, Do-Won , KIM, Sang-Woo , SEO, Won-Guk , SHIN, Hyun-Cheol , LEE, Ki-Beom , CHO, Sam-Young
IPC分类号： C23F1/34 , C23F1/02 , H05K3/06
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28088 , H01L21/32134 , H01L27/1214 , H01L27/124 , H05K3/067
摘要： Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
摘要翻译：本发明的示例性实施例提供了一种金属布线蚀刻剂。根据本发明的示例性实施方式的金属线蚀刻剂包括过硫酸铵，有机酸，铵盐，含氟化合物，二醇类化合物和唑类化合物。

3. 发明申请

WO2003060601A1 A WIRE FOR A DISPLAY DEVICE, A METHOD FOR MANUFACTURING THE SAME, A THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE WIRE, AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于显示装置的线，其制造方法，包括线的薄膜晶体管阵列面板及其制造方法
公开(公告)号：WO2003060601A1
公开(公告)日：2003-07-24
申请号：PCT/KR2002/001434
申请日：2002-07-29
申请人： SAMSUNG ELECTRONICS CO., LTD. , YU, Seung-Hee , HONG, Mun-Pyo , RHO, Soo-Guy , ROH, Nam-Seok , SONG, Keun-Kyu , CHOE, Hee-Hwan , KIM, Bo-Sung , KIM, Sang-Gab , KANG, Sung-Chul , PARK, Hong-Sick
发明人： YU, Seung-Hee , HONG, Mun-Pyo , RHO, Soo-Guy , ROH, Nam-Seok , SONG, Keun-Kyu , CHOE, Hee-Hwan , KIM, Bo-Sung , KIM, Sang-Gab , KANG, Sung-Chul , PARK, Hong-Sick
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F2001/136295
摘要： First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH 4 ) 2 (NO3) 6 , 10-20% NH 3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(NH 4 ) 2 (NO 3 ) 6 , 10-20% NH 3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and pattered to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads. A transparent conductive material or a reflective conductive material is deposited and patterned to form a plurality of pixel electrodes, a plurality of subsidiary gate pads and a plurality of subsidiary data pads electrically connected to the drain electrodes, the gate pads and the data pads, respectively. The gate lines and the data lines with low reflectance are used as a light-blocking film for blocking the light leakage between the pixel areas, and do not increase the black brightness. Accordingly, a separate black matrix need not be provided on the color filter panel, thereby securing both aperture ratio of the pixel and high contrast ratio.
摘要翻译：首先，使用包括8-12％Ce（NH 4）2（NO 3）6，10-20％NH 3和剩余的超纯水的蚀刻剂沉积和图案化Cr膜和CrOx膜，以形成包括多个栅极线，多个栅电极和多个栅极焊盘。接下来，依次形成栅极绝缘膜，半导体层和欧姆接触层。依次沉积Cr膜和CrOx膜，并使用包括8-12％Ce（NH 4）2（NO 3）6，10-20％NH 3和剩余的超纯水的蚀刻剂进行图案化以形成包括多个数据的数据线线，多个源电极，多个漏电极和多个数据焊盘。钝化层被沉积并图案化以形成分别暴露漏电极，栅极焊盘和数据焊盘的多个接触孔。沉积透明导电材料或反射导电材料以形成多个像素电极，分别与漏电极，栅极焊盘和数据焊盘电连接的多个辅助栅极焊盘和多个辅助数据焊盘。栅极线和低反射率的数据线被用作阻挡像素区域之间的漏光的遮光膜，并且不增加黑色亮度。因此，不需要在滤色器面板上设置单独的黑矩阵，从而确保像素的开口率和高对比度。

4. 发明申请

WO2003005115A1 AN ETCHANT FOR A WIRE, A METHOD FOR MANUFACTURING THE WIRE AND A METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE METHOD 审中-公开
标题翻译：一种线的蚀刻剂，一种用于制造线的方法和一种制造薄膜晶体管阵列的方法，包括该方法
公开(公告)号：WO2003005115A1
公开(公告)日：2003-01-16
申请号：PCT/KR2002/001260
申请日：2002-07-03
申请人： SAMSUNG ELECTRONICS CO., LTD. , PARK, Hong-Sick , KANG, Sung-Chul
发明人： PARK, Hong-Sick , KANG, Sung-Chul
IPC分类号： G02F1/136
CPC分类号： H01L27/124 , G02F1/136286
摘要： In a method of fabricating a TFT array substrate, a gate wire is formed on an insulating substrate. The gate wire has gate lines, gate electrodes, and gate pads connected to the gate lines. A gate insulating layer and a semiconductor layer are formed in sequence. A data wire is formed, which includes data lines intersecting the gate lines, source electrodes connected to the data lines and placed close to the gate electrodes, drain electrodes opposite the source electrodes with respect to the gata electrodes, and data pads connected to tha data lines. A protective layer is deposited, and is patterned to form contact holes exposing at least the drain electrodes. A silver or silver alloy conductive layer is deposited on the protective layer. The conductive layer is patterned using an etching solution with phosphoric acid, nitric acid, acetic acid, potassium peroxymonosulphate and ultra-pure water or an etching solution with nitric acid, acetic acid, ethylene glycol and ultra-pure water to thereby form a reflecting layer. The reflecting layer is connected to the drain electrodes through the contact holes.
摘要翻译：在制造TFT阵列基板的方法中，在绝缘基板上形成栅极线。栅极线具有连接到栅极线的栅极线，栅电极和栅极焊盘。依次形成栅极绝缘层和半导体层。形成数据线，其包括与栅极线相交的数据线，连接到数据线并放置在栅电极附近的源电极，相对于gata电极与源电极相对的漏电极，以及连接到数据的数据焊盘线。沉积保护层，并且被图案化以形成暴露至少漏电极的接触孔。银或银合金导电层沉积在保护层上。使用具有磷酸，硝酸，乙酸，过氧化硫酸钾和超纯水的蚀刻溶液或使用硝酸，乙酸，乙二醇和超纯水的蚀刻溶液对导电层进行图案化，从而形成反射层。反射层通过接触孔与漏电极连接。

5. 发明申请

WO2010002194A3 STRIPPING AGENT AND METHOD FOR MANUFACTURING A DISPLAY PANEL USING THE STRIPPING AGENT 审中-公开
标题翻译：剥离剂和使用剥离剂制造显示面板的方法
公开(公告)号：WO2010002194A3
公开(公告)日：2010-04-22
申请号：PCT/KR2009003599
申请日：2009-07-01
申请人： DONGJIN SEMICHEM CO LTD , HONG SUN-YOUNG , PARK HONG-SICK , CHOUNG JONG-HYUN , LEE JI-SUN , SUH NAM-SEOK , KIM BONG-KYUN , CHOI YOUNG-JOO , LEE BYEONG-JIN , KIM BYUNG-UK , JEONG JONG-HYUN , YOON SUK-IL , SHIN SUNG-GUN , HUH SOON-BEOM , JUNG SE-HWAN , JANG DOO-YOUNG
发明人： HONG SUN-YOUNG , PARK HONG-SICK , CHOUNG JONG-HYUN , LEE JI-SUN , SUH NAM-SEOK , KIM BONG-KYUN , CHOI YOUNG-JOO , LEE BYEONG-JIN , KIM BYUNG-UK , JEONG JONG-HYUN , YOON SUK-IL , SHIN SUNG-GUN , HUH SOON-BEOM , JUNG SE-HWAN , JANG DOO-YOUNG
IPC分类号： G03F7/42
CPC分类号： G03F7/425
摘要： The present invention relates to a method for manufacturing a display panel including the steps of forming a stripping agent containing a cyclic amine compound of 1 to 20 wt %, a glycol ether compound of 10 to 90 wt %, and a remainder polar solvent, and forming a gate electrode, forming a gate insulation layer on the gate electrode, forming a semiconductor on the gate insulation layer, forming a source electrode and a drain electrode on the semiconductor, forming a color filter on the source electrode and the drain electrode, forming an insulation layer on the color filter, and forming a pixel electrode on the insulation layer. At least one of the steps of forming an insulation layer and the step of forming a pixel electrode includes the steps of depositing a photosensitive layer, exposing the photosensitive layer to light to form a plurality of photosensitive patterns, performing an etching process by using the photosensitive patterns, and stripping off the photosensitive patterns. The step of stripping off the photosensitive patterns uses a stripping agent containing a cyclic amine compound of 1 to 20 wt %, a glycol ether compound of 10 to 90 wt %, and a remainder polar solvent.
摘要翻译：本发明涉及一种制造显示面板的方法，包括以下步骤：形成含有1-20重量％的环胺化合物的汽提剂，10至90重量％的二醇醚化合物和其余的极性溶剂，以及形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成半导体，在半导体上形成源电极和漏电极，在源电极和漏极上形成滤色器，形成在滤色器上的绝缘层，并在绝缘层上形成像素电极。形成绝缘层的步骤和形成像素电极的步骤中的至少一个包括以下步骤：沉积感光层，将感光层曝光以形成多个感光图案，通过使用感光层进行蚀刻处理图案，剥离感光图案。剥离感光图案的步骤使用含有1〜20重量％的环胺化合物的脱模剂，10〜90重量％的二醇醚化合物和其余的极性溶剂。

6. 发明申请

WO2004000972A1 AN ETCHANT FOR A WIRING, A METHOD FOR MANUFACTURING THE WIRING USING THE ETCHANT, A THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE WIRING, AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于接线的蚀刻剂，使用蚀刻剂制造布线的方法，包括布线的薄膜晶体管阵列面板及其制造方法
公开(公告)号：WO2004000972A1
公开(公告)日：2003-12-31
申请号：PCT/KR2002/001770
申请日：2002-09-18
申请人： SAMSUNG ELECTRONICS CO., LTD. , PARK, Hong-Sick , KANG, Sung-Chul , CHO, Hong-Je
发明人： PARK, Hong-Sick , KANG, Sung-Chul , CHO, Hong-Je
IPC分类号： C09K13/00
CPC分类号： C23F1/30 , C09K13/06 , C23F1/02 , H01L21/32134 , H01L27/124 , H01L27/13
摘要： A method of manufacturing a TFT array panel according to the present invention forms a gate wire on an insulating substrate. The gate wire includes a plurality of gate lines and a plurality of gate electrodes connected to the gate lines. A semiconductor layer and a gate insulating layer are sequentially formed and a data wire is formed thereon. The data wire includes a plurality of data lines intersecting the gate lines, a plurality of source electrodes connected to the data lines and placed close to the gate electrodes, and a plurality of drain electrodes opposite the source electrodes with respect to the gate electrodes. A passivation layer is deposited and patterned to form a plurality of contact holes exposing the drain electrodes at least. A conductive layer made of Ag or Ag alloy is deposited on the passivation layer, and is patterned using an etchant containing ferric nitrate, nitric acid, acetic acid, hexamethylenetetramine and deionized water to form a plurality of reflective films electrically connected to the drain electrodes.
摘要翻译：根据本发明的TFT阵列板的制造方法在绝缘基板上形成栅极线。栅极线包括多个栅极线和连接到栅极线的多个栅电极。依次形成半导体层和栅极绝缘层，并在其上形成数据线。数据线包括与栅极线交叉的多条数据线，与数据线连接并靠近栅电极放置的多个源电极，以及与源电极相对于栅电极相对的多个漏电极。钝化层被沉积并图案化以形成至少暴露漏电极的多个接触孔。由Ag或Ag合金制成的导电层沉积在钝化层上，并使用含有硝酸铁，硝酸，乙酸，六亚甲基四胺和去离子水的蚀刻剂进行图案化，以形成电连接到漏电极的多个反射膜。

7. 发明申请

WO2003107434A1 A METHOD OF FORMING A METAL PATTERN AND A METHOD OF FABRICATING TFT ARRAY PANEL BY USING THE SAME 审中-公开
标题翻译：形成金属图案的方法和使用其制造TFT阵列面板的方法
公开(公告)号：WO2003107434A1
公开(公告)日：2003-12-24
申请号：PCT/KR2002/001391
申请日：2002-07-24
申请人： SAMSUNG ELECTRONICS CO. LTD. , PARK, Hong-Sick , KANG, Sung-Chul , CHO, Hong-Je , PARK, An-Na , PARK, Pong-Ok , JEONG, Chang-Oh
发明人： PARK, Hong-Sick , KANG, Sung-Chul , CHO, Hong-Je , PARK, An-Na , PARK, Pong-Ok , JEONG, Chang-Oh
IPC分类号： H01L29/786
CPC分类号： H01L21/28008 , G03F7/0047 , H01L21/288 , H01L21/32051 , H01L27/12 , H01L27/124 , H01L29/66765 , H01L29/78669 , H01L51/0003 , H01L51/0015 , H01L51/0021 , H01L51/0545
摘要： With a metal pattern formation process and a method of manufacturing a thin film transistor array panel using the metal pattern formation process, an organometallic layer is formed by coating an organometallic complex containing metal. The organometallic layer is exposed to light through a photo mask, and developed to form a metal pattern.
摘要翻译：利用金属图案形成工艺和使用金属图案形成工艺制造薄膜晶体管阵列板的方法，通过涂覆含有金属的有机金属络合物形成有机金属层。有机金属层通过光掩模曝光，并显影形成金属图案。

8. 发明申请

WO2003036377A1 A ETCHANT FOR WIRES, A METHOD FOR MANUFACTURING THE WIRES USING THE ETCHANT, A THIN FILM TRANSISTOR ARRAY SUBSTRATE AND A METHOD FOR MANUFACTURING THE SAME INCLUDING THE METHOD 审中-公开
标题翻译：电线的蚀刻剂，使用蚀刻剂制造线的方法，薄膜晶体管阵列基板及其制造方法，包括方法
公开(公告)号：WO2003036377A1
公开(公告)日：2003-05-01
申请号：PCT/KR2002/000112
申请日：2002-01-24
申请人： SAMSUNG ELECTRONICS CO., LTD. , PARK, Hong-Sick , KANG, Sung-Chul
发明人： PARK, Hong-Sick , KANG, Sung-Chul
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F2001/136295
摘要： First, a lower film of AINd Alloy and an upper film of MoW alloy are deposited in succession, and then patterned by an etchant including HNO 3 of 0.1-10%, H 3 PO 4 of 65-55%, CH 3 COOH of 5-20%, a stabilizer of 0.1-5% and the other ultra pure eater, to form a gate wire including a gate line, a gate electrode and a gate pad on a substrate. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in succession, and then, MoW alloy is deposited and patterned by an etchant including HNO 3 of 0.1-10%, H 3 PO 4 of 65-55%, CH 3 COOH of 5-20%, a stabilizer of 0.1-5% and the other ultra pure water, to form a data wire including a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Next, a passivation layer is deposited and patterned to form contact holes for exposing the drain electrode, the gate pad and the data pad, respectively. Then, IZO is deposited and patterned to form a pixel electrode, an auxiliary gate pad and an auxiliary data pad electrically connected to the drain electrode, the gate pad and the data pad, respectively.
摘要翻译：首先，依次沉积AINd合金的下部薄膜和MoW合金的上部膜，然后通过包含HNO> 3 <0.1-10％，H> 3 4 <65-55％的蚀刻剂进行图案化，，5-20％的CH> 3 0.1-10％，H> 3 PO 4的蚀刻剂来沉积和图案化MoW合金 <65-55％，CH> 3

9. 发明申请

WO2011115371A3 ETCHANT FOR METAL WIRING AND METHOD FOR MANUFACTURING METAL WIRING USING THE SAME 审中-公开
标题翻译：金属接线用金属接头及其制造金属接线方法
公开(公告)号：WO2011115371A3
公开(公告)日：2012-01-12
申请号：PCT/KR2011001060
申请日：2011-02-17
申请人： SAMSUNG ELECTRONICS CO LTD , DONGJIN SEMICHEM CO LTD , SUH NAM-SEOK , HONG SUN-YOUNG , CHOUNG JONG-HYUN , KIM BONG-KYUN , PARK HONG-SICK , SONG JEAN-HO , LEE WANG-WOO , KIM DO-WON , KIM SANG-WOO , SEO WON-GUK , SHIN HYUN-CHEOL , LEE KI-BEOM , CHO SAM-YOUNG
发明人： SUH NAM-SEOK , HONG SUN-YOUNG , CHOUNG JONG-HYUN , KIM BONG-KYUN , PARK HONG-SICK , SONG JEAN-HO , LEE WANG-WOO , KIM DO-WON , KIM SANG-WOO , SEO WON-GUK , SHIN HYUN-CHEOL , LEE KI-BEOM , CHO SAM-YOUNG
IPC分类号： C23F1/34 , C23F1/02 , H05K3/06
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28088 , H01L21/32134 , H01L27/1214 , H05K3/067
摘要： Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
摘要翻译：本发明的示例性实施例提供金属布线蚀刻剂。根据本发明的示例性实施方案的金属线蚀刻剂包括过硫酸铵，有机酸，铵盐，含氟化合物，二醇类化合物和唑类化合物。

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