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1. 发明申请

WO2010058922A2 HEIGHT ADJUSTMENT APPARATUS 审中-公开
标题翻译：高度调节装置
公开(公告)号：WO2010058922A2
公开(公告)日：2010-05-27
申请号：PCT/KR2009006500
申请日：2009-11-06
申请人： LEE KI-BEOM
发明人： LEE KI-BEOM
IPC分类号： D06F81/04
CPC分类号： D06F57/08 , D06F81/04
摘要： The present invention relates to a height adjustment apparatus, and more particularly, to a height adjustment apparatus capable of adjusting the height of the upper plate through a simple elevating operation. To accomplish the object of the present invention, the height adjustment apparatus comprises an actuating unit for controlling the height and a frame unit mounted on the actuating unit such that the height thereof can be controlled by an elevating operation.
摘要翻译：高度调节装置技术领域本发明涉及一种高度调节装置，更具体地，涉及一种能够通过简单的升降操作来调节上板的高度的高度调节装置。为了实现本发明的目的，高度调节装置包括用于控制高度的致动单元和安装在致动单元上的框架单元，使得其高度可以通过升降操作来控制。

2. 发明申请

WO2012177017A3 METAL WIRE ETCHANT LIQUID AND METHOD FOR MANUFACTURING A LIQUID CRYSTAL DISPLAY USING THE ETCHANT 审中-公开
标题翻译：金属线槽液体及其制造方法，用于制造采用ETCHANT的液晶显示器
公开(公告)号：WO2012177017A3
公开(公告)日：2013-02-28
申请号：PCT/KR2012004717
申请日：2012-06-15
申请人： DONGJIN SEMICHEM CO LTD , KU BYUNG SOO , LEE MYUNG HAN , CHO SAM YOUNG , LEE KI BEOM
发明人： KU BYUNG SOO , LEE MYUNG HAN , CHO SAM YOUNG , LEE KI BEOM
IPC分类号： C23F1/18 , C09K13/00 , H01L21/306 , H01L21/308
CPC分类号： H01L21/32134 , C09K13/10 , C23F1/18 , H01L27/124
摘要： Disclosed are a metal film etchant liquid composition including a copper used for a semiconductor device, and an etching method using same. The metal film etchant liquid composition of the present invention comprises: a fluoboric acid; or the fluoboric acid and at least one kind of fluorine compound. In the method for etching the metal film including the copper using the etchant liquid composition according to the present invention, a lower glass substrate is not damaged during the etching, and the copper-containing multilayer metal film may be etched all at once so as to improve the product yield of the semiconductor device. Further, in the etchant liquid composition and the etching method using the same according to the present invention, open defects, caused by a stepped portion and erosion, may be prevented as sulfate is not used. Since etching is possible without using an organic acid, precipitation with metal salts may be prevented, and fine patterns may be obtained.
摘要翻译：公开了包括用于半导体器件的铜的金属膜蚀刻剂液体组合物和使用它的蚀刻方法。本发明的金属膜蚀刻剂液体组合物包含：氟硼酸; 或氟硼酸和至少一种氟化合物。在使用根据本发明的蚀刻剂液体组合物蚀刻包含铜的金属膜的方法中，在蚀刻期间，下部玻璃基板不被损坏，并且可以同时蚀刻含铜多层金属膜，以便提高半导体器件的产品产量。此外，在根据本发明的蚀刻剂液体组合物和使用该蚀刻方法的蚀刻方法中，由于不使用硫酸盐，可以防止由阶梯部分引起的开放缺陷和侵蚀。由于可以在不使用有机酸的情况下进行蚀刻，因此可以防止用金属盐沉淀，并且可以获得精细图案。

3. 发明申请

WO2011115371A3 ETCHANT FOR METAL WIRING AND METHOD FOR MANUFACTURING METAL WIRING USING THE SAME 审中-公开
标题翻译：金属接线用金属接头及其制造金属接线方法
公开(公告)号：WO2011115371A3
公开(公告)日：2012-01-12
申请号：PCT/KR2011001060
申请日：2011-02-17
申请人： SAMSUNG ELECTRONICS CO LTD , DONGJIN SEMICHEM CO LTD , SUH NAM-SEOK , HONG SUN-YOUNG , CHOUNG JONG-HYUN , KIM BONG-KYUN , PARK HONG-SICK , SONG JEAN-HO , LEE WANG-WOO , KIM DO-WON , KIM SANG-WOO , SEO WON-GUK , SHIN HYUN-CHEOL , LEE KI-BEOM , CHO SAM-YOUNG
发明人： SUH NAM-SEOK , HONG SUN-YOUNG , CHOUNG JONG-HYUN , KIM BONG-KYUN , PARK HONG-SICK , SONG JEAN-HO , LEE WANG-WOO , KIM DO-WON , KIM SANG-WOO , SEO WON-GUK , SHIN HYUN-CHEOL , LEE KI-BEOM , CHO SAM-YOUNG
IPC分类号： C23F1/34 , C23F1/02 , H05K3/06
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28088 , H01L21/32134 , H01L27/1214 , H05K3/067
摘要： Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
摘要翻译：本发明的示例性实施例提供金属布线蚀刻剂。根据本发明的示例性实施方案的金属线蚀刻剂包括过硫酸铵，有机酸，铵盐，含氟化合物，二醇类化合物和唑类化合物。

4. 发明申请

WO2011078512A2 ETCHANT AND ELECTRONIC DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：电子和电子设备制造方法
公开(公告)号：WO2011078512A2
公开(公告)日：2011-06-30
申请号：PCT/KR2010008941
申请日：2010-12-14
申请人： DONGJIN SEMICHEM CO LTD , PARK KWI HONG , LEE KI BEOM , CHO SAM YOUNG , KU BYUNG SOO , CHOI JEONG HEON
发明人： PARK KWI HONG , LEE KI BEOM , CHO SAM YOUNG , KU BYUNG SOO , CHOI JEONG HEON
IPC分类号： C09K11/08 , H01L21/306
CPC分类号： C09K13/08 , H01L21/30604
摘要： Disclosed is an etching fluid for electronic devices, comprising: a transition metal and/or a transition metal salt; and a hydrofluoric acid and/or a fluoride salt. The etchant selectively etches an intrinsic semiconductor layer, in an electronic device which has a doped semiconductor layer situated between metal electrodes and said intrinsic semiconductor layer.
摘要翻译：公开了一种用于电子器件的蚀刻流体，包括：过渡金属和/或过渡金属盐; 和氢氟酸和/或氟化物盐。在具有位于金属电极和本征半导体层之间的掺杂半导体层的电子器件中，蚀刻剂选择性蚀刻本征半导体层。

5. 发明申请

WO2007094627A1 SYSTEM FOR TESTING A FLAT PANEL DISPLAY DEVICE AND METHOD THEREOF 审中-公开
标题翻译：用于测试平板显示设备的系统及其方法
公开(公告)号：WO2007094627A1
公开(公告)日：2007-08-23
申请号：PCT/KR2007/000814
申请日：2007-02-15
申请人： DONGJIN SEMICHEM CO., LTD , KIM, Byung-Uk , LEE, Ki-Beom , KIM, Yong-Woo , PARK, Mi-Sun , HONG, Jin-Sup , KIM, Wy-Yong
发明人： KIM, Byung-Uk , LEE, Ki-Beom , KIM, Yong-Woo , PARK, Mi-Sun , HONG, Jin-Sup , KIM, Wy-Yong
IPC分类号： G02F1/13
CPC分类号： G02F1/1309
摘要： A system for testing a flat panel display having a flat display panel assembly includes a testing stage for arranging the flat display panel assembly, a measuring apparatus being disposed on the testing stage and for measuring a spectrum of a transmitted light passing through a measuring region of the flat display panel assembly from a light source, a transporting apparatus for moving the measuring apparatus at a constant acceleration on the testing stage, a defect informing apparatus being electrically connected to the measuring apparatus and for informing an existence of defect, a type of defect, and a severity of defect by processing an electrical signal of the spectrum transmitted from the measuring apparatus.
摘要翻译：一种用于测试具有平板显示面板组件的平板显示器的系统，包括用于布置平板显示面板组件的测试台，测量装置设置在测试台上，并用于测量通过测量区域的测量区域的透射光的光谱来自光源的平面显示面板组件，用于在测试台上以恒定加速度移动测量装置的传送装置，与测量装置电连接并用于通知缺陷的存在的缺陷通知装置，缺陷的类型以及通过处理从测量装置发送的频谱的电信号的缺陷的严重性。

6. 发明申请

WO2012057467A2 COPPER-CONTAINING ETCHANT COMPOSITION FOR A METAL LAYER, AND ETCHING METHOD USING SAME 审中-公开
标题翻译：用于金属层的含铜蚀刻剂组合物及使用该蚀刻剂的蚀刻方法
公开(公告)号：WO2012057467A2
公开(公告)日：2012-05-03
申请号：PCT/KR2011007653
申请日：2011-10-14
申请人： DONGJIN SEMICHEM CO LTD , KU BYUNG SOO , CHOI JEONG HEON , CHO SAM YOUNG , LEE KI BEOM
发明人： KU BYUNG SOO , CHOI JEONG HEON , CHO SAM YOUNG , LEE KI BEOM
IPC分类号： C09K13/10 , C23F1/18
CPC分类号： C09K13/10 , C23F1/18 , H01L21/32134
摘要： Provided are a copper-containing etchant composition for a metal layer, which is used for semiconductor devices, and an etching method using same. An etchant composition including fluoboric acid enables copper-containing multilayers to be etched together without damage to a glass substrate, thus improving the yield of semiconductor devices.
摘要翻译：提供一种用于半导体器件的用于金属层的含铜蚀刻剂组合物及使用其的蚀刻方法。包含氟硼酸的蚀刻剂组合物使得可以将含铜多层一起蚀刻而不损伤玻璃基板，从而提高了半导体器件的产量。

7. 发明申请

WO2013069873A1 ETCHANT COMPOSITION AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING THE SAME 审中-公开
标题翻译：蚀刻组合物和使用该薄膜晶体管制造薄膜晶体管的方法
公开(公告)号：WO2013069873A1
公开(公告)日：2013-05-16
申请号：PCT/KR2012/005540
申请日：2012-07-12
申请人： SAMSUNG DISPLAY CO., LTD. , DONGJIN SEMICHEM CO., LTD. , KIM, Bong-Kyun , PARK, Hong Sick , LEE, Wang Woo , PARK, Young Woo , CHOI, Shin Il , KIM, Sang-Woo , LEE, Ki-Beom , LEE, Dae-Woo , CHO, Sam-Young , CHOI, Jeong-Heon
发明人： KIM, Bong-Kyun , PARK, Hong Sick , LEE, Wang Woo , PARK, Young Woo , CHOI, Shin Il , KIM, Sang-Woo , LEE, Ki-Beom , LEE, Dae-Woo , CHO, Sam-Young , CHOI, Jeong-Heon
IPC分类号： C09K13/06 , H01L29/786
CPC分类号： H01L21/32134 , C09K13/06 , C09K13/08 , C09K13/10 , H01L21/465 , H01L29/7869
摘要： Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH 4 ) 2 )S 2 ,O 8 , an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, and water.
摘要翻译：提供了一种蚀刻剂组合物。根据本发明的示例性实施方案的蚀刻剂组合物包括过硫酸铵（（NH 4）2）S2，O 8，唑类化合物，水溶性胺化合物，含磺酸化合物，含硝酸盐化合物，和水。

8. 发明申请

WO2011115371A2 ETCHANT FOR METAL WIRING AND METHOD FOR MANUFACTURING METAL WIRING USING THE SAME 审中-公开
标题翻译：金属接线用金属接头及其制造金属接线方法
公开(公告)号：WO2011115371A2
公开(公告)日：2011-09-22
申请号：PCT/KR2011/001060
申请日：2011-02-17
申请人： SAMSUNG ELECTRONICS CO., LTD. , DONGJIN SEMICHEM CO., LTD. , SUH, Nam-Seok , HONG, Sun-Young , CHOUNG, Jong-Hyun , KIM, Bong-Kyun , PARK, Hong-Sick , SONG, Jean-Ho , LEE, Wang-Woo , KIM, Do-Won , KIM, Sang-Woo , SEO, Won-Guk , SHIN, Hyun-Cheol , LEE, Ki-Beom , CHO, Sam-Young
发明人： SUH, Nam-Seok , HONG, Sun-Young , CHOUNG, Jong-Hyun , KIM, Bong-Kyun , PARK, Hong-Sick , SONG, Jean-Ho , LEE, Wang-Woo , KIM, Do-Won , KIM, Sang-Woo , SEO, Won-Guk , SHIN, Hyun-Cheol , LEE, Ki-Beom , CHO, Sam-Young
IPC分类号： C23F1/34 , C23F1/02 , H05K3/06
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28088 , H01L21/32134 , H01L27/1214 , H01L27/124 , H05K3/067
摘要： Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
摘要翻译：本发明的示例性实施例提供了一种金属布线蚀刻剂。根据本发明的示例性实施方式的金属线蚀刻剂包括过硫酸铵，有机酸，铵盐，含氟化合物，二醇类化合物和唑类化合物。

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