专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2014018027A1 TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光温度控制
公开(公告)号：WO2014018027A1
公开(公告)日：2014-01-30
申请号：PCT/US2012/048050
申请日：2012-07-25
申请人： APPLIED MATERIALS, INC. , XU, Kun , ZHANG, Jimin , MAI, David H. , JEW, Stephen , SHEN, Shih-Haur Walters , WANG, Zhihong , OSTERHELD, Thomas H. , TU, Wen-Chiang , LAM, Gary Ka Ho , KITAJIMA, Tomohiko
发明人： XU, Kun , ZHANG, Jimin , MAI, David H. , JEW, Stephen , SHEN, Shih-Haur Walters , WANG, Zhihong , OSTERHELD, Thomas H. , TU, Wen-Chiang , LAM, Gary Ka Ho , KITAJIMA, Tomohiko
IPC分类号： H01L21/304
CPC分类号： B24B37/015 , H01L21/3212
摘要： Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
摘要翻译：提供半导体衬底的化学机械抛光（CMP）的方法，更具体地说，涉及这种化学机械抛光时的温度控制。一方面，该方法包括在抛光过程中用抛光表面抛光衬底以去除一部分导电材料，在抛光过程中重复地监测抛光表面的温度，并将抛光表面暴露于速率骤冷过程响应于所监测的温度，以便在抛光过程中达到监测温度的目标值。

2. 发明申请

WO2010126902A3 TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光的温度控制
公开(公告)号：WO2010126902A3
公开(公告)日：2011-02-03
申请号：PCT/US2010032609
申请日：2010-04-27
申请人： APPLIED MATERIALS INC , XU KUN , ZHANG JIMIN , JEW STEPHEN , OSTERHELD THOMAS H
发明人： XU KUN , ZHANG JIMIN , JEW STEPHEN , OSTERHELD THOMAS H
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B55/02 , B24B37/015
摘要： A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system.
摘要翻译：一种化学机械抛光设备，包括用于保持具有抛光表面的垫的台板，用于在抛光步骤期间将基板和抛光表面保持在一起的子系统以及定向为测量抛光表面的温度的温度传感器，其中子系统接受由传感器测量的温度并且被编程为响应于测量的温度改变抛光过程参数。在一个方面，一种化学机械抛光设备，其具有用于保持具有抛光表面的垫的台板，用于将流体从源输送到抛光表面的流体输送系统，以及温度控制器，其在操作期间控制流体的温度由运送系统运送。

3. 发明申请

WO2009134865A3 ENDPOINT DETECTION IN CHEMICAL MECHANICAL POLISHING USING MULTIPLE SPECTRA 审中-公开
公开(公告)号：WO2009134865A3
公开(公告)日：2009-11-05
申请号：PCT/US2009/042085
申请日：2009-04-29
申请人： APPLIED MATERIALS, INC. , QIAN, Jun , DHANDAPANI, Sivakumar , LEE, Harry, Q. , OSTERHELD, Thomas, H. , ZHU, Zhize
发明人： QIAN, Jun , DHANDAPANI, Sivakumar , LEE, Harry, Q. , OSTERHELD, Thomas, H. , ZHU, Zhize
IPC分类号： H01L21/304
摘要： A computer implemented method includes obtaining at least one current spectrum with an in-situ optical monitoring system, comparing the current spectrum to a plurality of different reference spectra, and determining based on the comparing whether a polishing endpoint has been achieved for the substrate having the outermost layer undergoing polishing. The current spectrum is a spectrum of light reflected from a substrate having an outermost layer undergoing polishing and at least one underlying layer. The plurality of reference spectra represent spectra of light reflected from substrates with outermost layers having the same thickness and underlying layers having different thicknesses.

4. 发明申请

WO2012018425A3 REAL-TIME MONITORING OF RETAINING RING THICKNESS AND LIFETIME 审中-公开
标题翻译：保持环厚度和寿命的实时监测
公开(公告)号：WO2012018425A3
公开(公告)日：2012-05-18
申请号：PCT/US2011036731
申请日：2011-05-17
申请人： APPLIED MATERIALS INC , MCREYNOLDS PETER , RONDUM ERIC S , LEUNG GARLEN C , ZHONG ADAM H , MENK GREGORY E , PRABHU GOPALAKRISHNA B , OSTERHELD THOMAS H
发明人： MCREYNOLDS PETER , RONDUM ERIC S , LEUNG GARLEN C , ZHONG ADAM H , MENK GREGORY E , PRABHU GOPALAKRISHNA B , OSTERHELD THOMAS H
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/005 , B24B37/042 , B24B37/32
摘要： A method and apparatus for monitoring the condition of a surface of a retaining ring disposed on a carrier head in a polishing module is described. In one embodiment, an apparatus is provided. The apparatus includes a carrier head movable in a travel path between at least one polishing station for polishing a substrate as the substrate is retained in the carrier head, and a transfer station for transferring the substrate to and from the carrier head, the carrier head having a retaining ring, and a sensor disposed in the travel path of the carrier head, the sensor operable to provide a metric indicative of a condition of the retaining ring.
摘要翻译：描述了一种用于监测设置在抛光模块中的载体头上的保持环的表面的状态的方法和设备。在一个实施例中，提供了一种装置。该装置包括一个载体头，该载体头在至少一个抛光站之间的移动路径中可移动，用于当基底保持在载体头中时抛光基底;以及传送站，用于将基底传送到载体头和从载体头传送，载体头具有保持环和布置在承载头的行进路径中的传感器，传感器可操作以提供指示保持环状态的度量。

5. 发明申请

WO2010082992A3 POLISHING PAD AND SYSTEM WITH WINDOW SUPPORT 审中-公开
标题翻译：抛光垫和系统与窗口支持
公开(公告)号：WO2010082992A3
公开(公告)日：2010-09-23
申请号：PCT/US2009067587
申请日：2009-12-10
申请人： APPLIED MATERIALS INC , QIAN JUN , BENVEGNU DOMINIC J , CUI NINGZHUO , SWEDEK BOGUSLAW A , OSTERHELD THOMAS H
发明人： QIAN JUN , BENVEGNU DOMINIC J , CUI NINGZHUO , SWEDEK BOGUSLAW A , OSTERHELD THOMAS H
IPC分类号： B24B37/04 , B24B7/12 , B24B49/12 , H01L21/304
CPC分类号： B24B37/013 , B24B37/205 , B24B49/12
摘要： A polishing system includes a polishing pad having a solid light-transmissive window, an optical fiber having an end, and a spacer having a vertical aperture therethrough. A bottom surface of the spacer contacts the end of the optical fiber, a top surface of the spacer contacts the underside of the window, and the vertical aperture is aligned with the optical fiber.
摘要翻译：抛光系统包括具有固体透光窗的抛光垫，具有一端的光纤和具有穿过其的垂直孔的间隔件。间隔件的底表面接触光纤的端部，间隔件的顶表面接触窗口的下侧，并且垂直孔与光纤对准。

6. 发明申请

WO2009134865A2 ENDPOINT DETECTION IN CHEMICAL MECHANICAL POLISHING USING MULTIPLE SPECTRA 审中-公开
标题翻译：使用多个光谱的化学机械抛光中的端点检测
公开(公告)号：WO2009134865A2
公开(公告)日：2009-11-05
申请号：PCT/US2009042085
申请日：2009-04-29
申请人： APPLIED MATERIALS INC , QIAN JUN , DHANDAPANI SIVAKUMAR , LEE HARRY Q , OSTERHELD THOMAS H , ZHU ZHIZE
发明人： QIAN JUN , DHANDAPANI SIVAKUMAR , LEE HARRY Q , OSTERHELD THOMAS H , ZHU ZHIZE
IPC分类号： H01L21/304
CPC分类号： B24B37/013 , B24B49/12
摘要： A computer implemented method includes obtaining at least one current spectrum with an in-situ optical monitoring system, comparing the current spectrum to a plurality of different reference spectra, and determining based on the comparing whether a polishing endpoint has been achieved for the substrate having the outermost layer undergoing polishing. The current spectrum is a spectrum of light reflected from a substrate having an outermost layer undergoing polishing and at least one underlying layer. The plurality of reference spectra represent spectra of light reflected from substrates with outermost layers having the same thickness and underlying layers having different thicknesses.
摘要翻译：计算机实现的方法包括：利用原位光学监测系统获得至少一个当前频谱，将当前频谱与多个不同的参考光谱进行比较，并且基于比较是否已经实现了具有最外层进行抛光。当前的光谱是从具有正在研磨的最外层的基底和至少一个下层反射的光的光谱。多个参考光谱表示从具有相同厚度的最外层和具有不同厚度的下层的基底反射的光的光谱。

7. 发明申请

WO2013070289A1 BRUSH BOX MODULE FOR CHEMICAL MECHANICAL POLISHING CLEANER 审中-公开
标题翻译：用于化学机械抛光清洁剂的刷盒
公开(公告)号：WO2013070289A1
公开(公告)日：2013-05-16
申请号：PCT/US2012/048193
申请日：2012-07-25
申请人： APPLIED MATERIALS, INC. , CHEN, Hui , D'AMBRA, Allen L. , KARUPPIAH, Lakshmanan , OSTERHELD, Thomas H.
发明人： CHEN, Hui , D'AMBRA, Allen L. , KARUPPIAH, Lakshmanan , OSTERHELD, Thomas H.
IPC分类号： H01L21/302 , H01L21/304
CPC分类号： H01L21/67046
摘要： Embodiments of the invention generally relate to a method and apparatus for cleaning a substrate. Particularly, embodiments of the invention relate to an apparatus and method for cleaning a substrate using a scrub brush. One embodiment provides a brush box assembly for cleaning a substrate. The assembly comprises a chamber body having a cleaning chamber disposed therein, a rotatable chuck disposed in the cleaning chamber, and an edge cleaner module positioned adjacent the chuck.
摘要翻译：本发明的实施例一般涉及用于清洁基底的方法和装置。特别地，本发明的实施例涉及一种使用擦洗刷清洁衬底的装置和方法。一个实施例提供了一种用于清洁基底的刷盒组件。该组件包括一个室主体，其具有设置在其中的清洁室，设置在清洁室中的可旋转卡盘以及邻近卡盘定位的边缘清洁器模块。

8. 发明申请

WO2010126902A2 TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光温度控制
公开(公告)号：WO2010126902A2
公开(公告)日：2010-11-04
申请号：PCT/US2010/032609
申请日：2010-04-27
申请人： APPLIED MATERIALS, INC. , XU, Kun , ZHANG, Jimin , JEW, Stephen , OSTERHELD, Thomas H.
发明人： XU, Kun , ZHANG, Jimin , JEW, Stephen , OSTERHELD, Thomas H.
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B55/02 , B24B37/015
摘要： A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system.
摘要翻译：一种化学机械抛光装置，包括用于在抛光步骤期间将用于保持具有抛光表面的焊盘的垫板，用于保持基板和抛光表面的子系统以及用于测量抛光表面的温度的温度传感器，其中所述子系统接受由传感器测量的温度，并被编程以响应于测量的温度来改变抛光工艺参数。一方面，一种具有用于保持具有抛光表面的焊盘的压板的化学机械抛光装置，用于将流体从源传送到抛光表面的流体输送系统以及在操作期间控制流体温度的温度控制器由运送系统运输。

9. 发明申请

WO2010053804A3 ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：多波长化学机械抛光的端点控制
公开(公告)号：WO2010053804A3
公开(公告)日：2010-07-22
申请号：PCT/US2009062433
申请日：2009-10-28
申请人： APPLIED MATERIALS INC , ZHANG JIMIN , OSTERHELD THOMAS H , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , JEW STEPHEN
发明人： ZHANG JIMIN , OSTERHELD THOMAS H , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , JEW STEPHEN
IPC分类号： H01L21/304 , B24B37/013
CPC分类号： B24B37/013 , B24B49/04
摘要： A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected thickness that each substrate will have at a target time is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates have closer to the same thickness at the target time than without the adjustment.
摘要翻译：计算机实现的方法包括在抛光装置中同时抛光衬底。每个基底具有通过独立可变抛光参数独立控制的抛光速率。随着每个基板的厚度变化的测量数据在用原位监测系统进行抛光时从每个基板获得。基于测量数据确定每个基板在目标时间具有的投影厚度。调整至少一个基板的抛光参数以调节至少一个基板的抛光速率，使得基板在目标时间比不进行调节更接近相同的厚度。

10. 发明申请

WO2013109461A1 ENGINEERING DIELECTRIC FILMS FOR CMP STOP 审中-公开
标题翻译： CMP停止工程电介质膜
公开(公告)号：WO2013109461A1
公开(公告)日：2013-07-25
申请号：PCT/US2013/021038
申请日：2013-01-10
申请人： APPLIED MATERIALS, INC. , BALSEANU, Mihaela , XIA, Li-Qun , WITTY, Derek R. , OSTERHELD, Thomas H. , LEE, Christopher Heung-Gyun , MCCLINTOCK, William H.
发明人： BALSEANU, Mihaela , XIA, Li-Qun , WITTY, Derek R. , OSTERHELD, Thomas H. , LEE, Christopher Heung-Gyun , MCCLINTOCK, William H.
IPC分类号： H01L21/8238 , H01L21/336 , H01L29/78 , H01L21/31 , H01L21/304
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/02274 , H01L21/31053 , H01L21/823807 , H01L29/66545 , H01L29/7843
摘要： A method for forming an integrated circuit is provided. In one embodiment, the method includes forming a stop layer comprising carbon doped silicon nitride on a gate region on a substrate, the gate region having a poly gate and one or more spacers formed adjacent the poly gate, forming a dielectric layer on the stop layer, and removing a portion of the dielectric layer above the gate region using a CMP process, wherein the stop layer is a strain inducing layer having a CMP removal rate that is less than the CMP removal rate of the dielectric layer and equal to or less than the CMP removal rate of the one or more spacers.
摘要翻译：提供一种用于形成集成电路的方法。在一个实施例中，该方法包括在衬底上的栅极区域上形成包含碳掺杂氮化硅的阻挡层，栅极区域具有多晶硅栅极和与多晶硅栅极相邻形成的一个或多个间隔区，在阻挡层上形成电介质层并且使用CMP工艺去除所述栅极区域上方的所述电介质层的一部分，其中所述阻挡层是具有小于所述介电层的CMP去除速率的CMP去除速率的应变诱导层，并且等于或小于一个或多个间隔物的CMP去除速率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式