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1. 发明申请

WO2011037757A3 METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLED PLASMA REACTOR 审中-公开
标题翻译：在电感耦合等离子体反应器中高效气体离解的方法和装置
公开(公告)号：WO2011037757A3
公开(公告)日：2011-06-23
申请号：PCT/US2010048269
申请日：2010-09-09
申请人： APPLIED MATERIALS INC , NANGOY ROY C , SINGH SARAVJEET , FARR JON C , PAMARTHY SHARMA V , KUMAR AJAY
发明人： NANGOY ROY C , SINGH SARAVJEET , FARR JON C , PAMARTHY SHARMA V , KUMAR AJAY
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , C23C16/45508 , C23C16/45563 , C23C16/45574 , C23C16/45587 , C23C16/45591 , C23C16/505 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/3244 , H01J37/32449 , H01J37/32458 , H01L21/30655 , H01L21/67069
摘要： Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
摘要翻译：本发明的实施例涉及用于向处理室提供处理气体的方法和设备，其具有改善的等离子体解离效率。本发明的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体积的外部主体。处理气体通过暴露于用于产生等离子体的电源的延伸体积流入处理室。

2. 发明申请

WO2010019339A3 METHOD FOR AN IMPROVED CHEMICAL MECHANICAL POLISHING SYSTEM 审中-公开
标题翻译：一种改进的化学机械抛光系统的方法
公开(公告)号：WO2010019339A3
公开(公告)日：2010-06-03
申请号：PCT/US2009050663
申请日：2009-07-15
申请人： APPLIED MATERIALS INC , WANG YULIN , NANGOY ROY , YILMAZ ALPAY
发明人： WANG YULIN , NANGOY ROY , YILMAZ ALPAY
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , B24B37/042 , B24B53/017
摘要： A method for polishing a substrate on a pad large enough to accommodate polishing at least two substrates simultaneously The method includes simultaneously pressing a first substrate and a second substrate against a single polishing surface of a polishing module, providing polishing fluid from a first fluid delivery arm in front of the first substrate while the first substrate is pressed against the polishing surface, providing polishing fluid from a second fluid delivery arm at a location in front of the second substrate while the second substrate is pressed against the polishing surface, conditioning the polishing surface with a first conditioner at a location behind the first substrate while the first substrate is pressed against the polishing surface, and conditioning the polishing surface with a second conditioner at a location behind the second substrate while the second substrate is pressed against the polishing surface.
摘要翻译：一种用于抛光垫上的衬底的方法，该衬底足够大以允许同时抛光至少两个衬底。该方法包括：将第一衬底和第二衬底同时压靠抛光模块的单个抛光表面，从第一流体递送臂在第一衬底被压靠在抛光表面上的同时在第一衬底的前方，在第二衬底被压靠在抛光表面上的同时，在第二衬底前方的位置处从第二流体递送臂提供抛光流体，调节抛光表面当第一衬底被压靠在抛光表面上时，在第一衬底后面的位置处具有第一调节器，并且在第二衬底被压靠在抛光表面上的同时，在第二衬底后面的位置处用第二调节器调节抛光表面。

3. 发明申请

WO2010017000A3 IN-SITU PERFORMANCE PREDICTION OF PAD CONDITIONING DISK BY CLOSED LOOP TORQUE MONITORING 审中-公开
标题翻译：封闭式循环扭矩监测在现场对垫式空调盘的性能预测
公开(公告)号：WO2010017000A3
公开(公告)日：2010-04-01
申请号：PCT/US2009050471
申请日：2009-07-14
申请人： APPLIED MATERIALS INC , DESHPANDE SAMEER , CHANG SHOU-SUNG , CHEN HUNG CHIN , NANGOY ROY C , TSAI STAN D
发明人： DESHPANDE SAMEER , CHANG SHOU-SUNG , CHEN HUNG CHIN , NANGOY ROY C , TSAI STAN D
IPC分类号： H01L21/304
CPC分类号： B24B49/18 , B24B37/005 , B24B49/16 , B24B53/017
摘要： Polishing pads used in CMP machines are consumable components that are typically replaced after a specific number of wafers have been processed. The life of a polishing pad is optimized by controlling the rate of material removal from the polishing pad by the conditioning disk. The conditioning disk removes enough material so the polishing surface can properly process the wafers but does not remove any excess material. Preventing excess material removal extends the life of the polishing pad. During CMP processing, the controller receives data concerning the torque applied to the conditioning disk and the torque applied to the arm to sweep the conditioning disk across the polishing pad. Based upon the detected operating conditions, the system can predict the rate of material removal and adjust the forces applied to the conditioning disk so that the life of the polishing pad is optimized.
摘要翻译： CMP机器中使用的抛光垫是可消耗部件，通常在处理特定数量的晶片之后进行更换。抛光垫的使用寿命通过控制由抛光垫从抛光垫去除材料的速率来优化。调理盘移除了足够的材料，所以抛光表面可以正确处理晶圆，但不会去除任何多余的材料。防止多余的材料去除延长了抛光垫的寿命。在CMP处理期间，控制器接收关于施加到调节盘的扭矩和施加到臂的扭矩以将调节盘扫过抛光垫的数据。基于检测到的操作条件，系统可以预测材料去除速率并调整施加到调节盘的力，从而优化抛光垫的寿命。

4. 发明申请

WO2013002885A1 METHOD AND APPARATUS FOR FAST GAS EXCHANGE, FAST GAS SWITCHING AND PROGRAMMABLE GAS DELIVERY 审中-公开
标题翻译：用于快速气体交换，快速气体切换和可编程气体输送的方法和装置
公开(公告)号：WO2013002885A1
公开(公告)日：2013-01-03
申请号：PCT/US2012/034905
申请日：2012-04-25
申请人： APPLIED MATERIALS, INC. , SINGH, Saravjeet , NANGOY, Roy C.
发明人： SINGH, Saravjeet , NANGOY, Roy C.
IPC分类号： H01L21/02 , H01L21/3065 , H01L21/205
CPC分类号： H01L21/67017 , H01L21/6719 , Y10T137/0318 , Y10T137/87096
摘要： Embodiments of the invention relate to a gas delivery system. The gas delivery system includes a fast gas exchange module in fluid communication with one or more gas panels and a process chamber. The fast gas exchange module has first and second sets of flow controllers and each of first and second sets of flow controllers has multiple flow controllers. The flow controller is configured such that each of the flow controllers in the first and second sets of the flow controllers is independently operated to selectively open to divert gas to the process chamber or an exhaust. The first and second sets of flow controllers are operated for synchronized switching of gases in a pre-determined timed sequence of flow controller actuation. The invention enables fast switch of resultant gas flow in the process chamber while having individual flow controller operated at lower switching speed to provide longer service life.
摘要翻译：本发明的实施例涉及一种气体输送系统。气体输送系统包括与一个或多个气体面板和处理室流体连通的快速气体交换模块。快速气体交换模块具有第一和第二组流量控制器，并且第一和第二组流量控制器中的每一个具有多个流量控制器。流量控制器被配置为使得第一和第二组流量控制器中的每个流量控制器被独立地操作以选择性地打开以将气体转移到处理室或排气口。第一和第二组流量控制器用于以预定的流量控制器致动的定时顺序同步切换气体。本发明能够在处理室中快速切换合成气流，同时具有以较低切换速度操作的单独流量控制器以提供更长的使用寿命。

5. 发明申请

WO2009117565A3 METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS 审中-公开
标题翻译：基底蚀刻系统和方法的方法和设备
公开(公告)号：WO2009117565A3
公开(公告)日：2009-11-12
申请号：PCT/US2009037647
申请日：2009-03-19
申请人： APPLIED MATERIALS INC , PAMARTHY SHARMA V , FARR JON C , SIRAJUDDIN KHALID , GOLD EZRA R , CRUSE JAMES P , OLSZEWSKI SCOTT , NANGOY ROY C , SINGH SARAVJEET , BUCHBERGER DOUGLAS A , LEE JARED A , ZHANG CHUNLEI
发明人： PAMARTHY SHARMA V , FARR JON C , SIRAJUDDIN KHALID , GOLD EZRA R , CRUSE JAMES P , OLSZEWSKI SCOTT , NANGOY ROY C , SINGH SARAVJEET , BUCHBERGER DOUGLAS A , LEE JARED A , ZHANG CHUNLEI
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , Y10T137/0318 , Y10T137/87169
摘要： Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
摘要翻译：本发明的实施例涉及衬底蚀刻系统和处理。在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，并且在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。在另一个实施例中，系统可以包括气体输送系统，该气体输送系统包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导至腔室的多个流量控制器该室有助于在进出室和面板的气体之间的快速气体转换。

6. 发明申请

WO2009117565A2 METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS 审中-公开
标题翻译：基板蚀刻系统和工艺的方法和装置
公开(公告)号：WO2009117565A2
公开(公告)日：2009-09-24
申请号：PCT/US2009/037647
申请日：2009-03-19
申请人： APPLIED MATERIALS, INC. , PAMARTHY, Sharma, V. , FARR, Jon, C. , SIRAJUDDIN, Khalid , GOLD, Ezra, R. , CRUSE, James, P. , OLSZEWSKI, Scott , NANGOY, Roy, C. , SINGH, Saravjeet , BUCHBERGER, Douglas, A. , LEE, Jared, A. , ZHANG, Chunlei
发明人： PAMARTHY, Sharma, V. , FARR, Jon, C. , SIRAJUDDIN, Khalid , GOLD, Ezra, R. , CRUSE, James, P. , OLSZEWSKI, Scott , NANGOY, Roy, C. , SINGH, Saravjeet , BUCHBERGER, Douglas, A. , LEE, Jared, A. , ZHANG, Chunlei
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , Y10T137/0318 , Y10T137/87169
摘要： Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
摘要翻译：本发明的实施例涉及一种基板蚀刻系统和工艺。在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏压功率在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到该室用于促进在进出室和面板之间的气体之间的快速气体转变。

7. 发明申请

WO2013162851A1 PROPORTIONAL AND UNIFORM CONTROLLED GAS FLOW DELIVERY FOR DRY PLASMA ETCH APPARATUS 审中-公开
标题翻译：干式等离子体设备的比例和均匀控制气体输送
公开(公告)号：WO2013162851A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/035383
申请日：2013-04-05
申请人： APPLIED MATERIALS, INC. , NANGOY, Roy C. , NGUYEN, Andrew Y.
发明人： NANGOY, Roy C. , NGUYEN, Andrew Y.
IPC分类号： H01L21/3065 , H01L21/02
CPC分类号： B05B1/185 , B01F15/0264 , C23C16/45563 , C23C16/45565 , C23C16/45578 , H01J37/32119 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved uniformity. One embodiment of the present invention provides a gas injection assembly. The gas injection assembly includes an inlet hub, a nozzle having a plurality of injection passages disposed against the inlet hub, and a distribution insert disposed between the nozzle and the inlet hub. The distribution insert has one or more gas distribution passages configured to connect the inlet hub to the plurality of the injection passages the nozzle. Each of the one or more gas distribution passages has one inlet connecting with a plurality of outlets, and distances between the inlet and each of the plurality of outlets are substantially equal.
摘要翻译：本发明的实施例涉及用于向处理室提供具有改进的均匀性的处理气体的方法和装置。本发明的一个实施例提供一种气体注入组件。气体注入组件包括入口轮毂，具有多个设置在入口轮毂上的喷射通道的喷嘴以及设置在喷嘴和入口轮毂之间的分配插入件。分配插件具有一个或多个气体分配通道，其构造成将入口轮毂连接到喷嘴的多个喷射通道。一个或多个气体分配通道中的每一个具有与多个出口连接的一个入口，并且多个出口中的入口与每个出口之间的距离基本相等。

8. 发明申请

WO2011037757A2 METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLED PLASMA REACTOR 审中-公开
标题翻译：电感耦合等离子体反应器高效气体分离的方法与装置
公开(公告)号：WO2011037757A2
公开(公告)日：2011-03-31
申请号：PCT/US2010/048269
申请日：2010-09-09
申请人： APPLIED MATERIALS, INC. , NANGOY, Roy, C. , SINGH, Saravjeet , FARR, Jon, C. , PAMARTHY, Sharma, V. , KUMAR, Ajay
发明人： NANGOY, Roy, C. , SINGH, Saravjeet , FARR, Jon, C. , PAMARTHY, Sharma, V. , KUMAR, Ajay
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , C23C16/45508 , C23C16/45563 , C23C16/45574 , C23C16/45587 , C23C16/45591 , C23C16/505 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/3244 , H01J37/32449 , H01J37/32458 , H01L21/30655 , H01L21/67069
摘要： Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
摘要翻译：本发明的实施例涉及用于向具有改进的等离子体解离效率的处理室提供处理气体的方法和装置。本发明的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体的外部主体。处理气体通过暴露于等离子体产生的电源的延伸体积流到处理室。

9. 发明申请

WO2010019339A2 METHOD FOR AN IMPROVED CHEMICAL MECHANICAL POLISHING SYSTEM 审中-公开
标题翻译：改进化学机械抛光系统的方法
公开(公告)号：WO2010019339A2
公开(公告)日：2010-02-18
申请号：PCT/US2009/050663
申请日：2009-07-15
申请人： APPLIED MATERIALS, INC. , WANG, Yulin , NANGOY, Roy , YILMAZ, Alpay
发明人： WANG, Yulin , NANGOY, Roy , YILMAZ, Alpay
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , B24B37/042 , B24B53/017
摘要： A method for polishing a substrate on a pad large enough to accommodate polishing at least two substrates simultaneously The method includes simultaneously pressing a first substrate and a second substrate against a single polishing surface of a polishing module, providing polishing fluid from a first fluid delivery arm in front of the first substrate while the first substrate is pressed against the polishing surface, providing polishing fluid from a second fluid delivery arm at a location in front of the second substrate while the second substrate is pressed against the polishing surface, conditioning the polishing surface with a first conditioner at a location behind the first substrate while the first substrate is pressed against the polishing surface, and conditioning the polishing surface with a second conditioner at a location behind the second substrate while the second substrate is pressed against the polishing surface.
摘要翻译：一种用于在衬垫上抛光足够大的衬底以适应同时抛光至少两个衬底的方法。该方法包括同时将第一衬底和第二衬底压在抛光模块的单个研磨表面上，从第一流体输送臂在第一基板被压靠在抛光表面上的同时，在第二基板的前面的位置处从第二流体输送臂提供抛光流体，同时将第二基板压在抛光表面上，调整抛光表面在第一衬底被压靠在抛光表面上的同时在第一衬底后面的位置处的第一调节器，并且在第二衬底被压靠在抛光表面上的同时在第二衬底后面的位置用第二调理器调理抛光表面。

10. 发明申请

WO2010017000A2 IN-SITU PERFORMANCE PREDICTION OF PAD CONDITIONING DISK BY CLOSED LOOP TORQUE MONITORING 审中-公开
标题翻译：通过闭环控制扭矩监测进行调节盘的现场性能预测
公开(公告)号：WO2010017000A2
公开(公告)日：2010-02-11
申请号：PCT/US2009/050471
申请日：2009-07-14
申请人： APPLIED MATERIALS, INC. , DESHPANDE, Sameer , CHANG, Shou-Sung , CHEN, Hung, Chin , NANGOY, Roy, C. , TSAI, Stan, D.
发明人： DESHPANDE, Sameer , CHANG, Shou-Sung , CHEN, Hung, Chin , NANGOY, Roy, C. , TSAI, Stan, D.
IPC分类号： H01L21/304
CPC分类号： B24B49/18 , B24B37/005 , B24B49/16 , B24B53/017
摘要： Polishing pads used in CMP machines are consumable components that are typically replaced after a specific number of wafers have been processed. The life of a polishing pad is optimized by controlling the rate of material removal from the polishing pad by the conditioning disk. The conditioning disk removes enough material so the polishing surface can properly process the wafers but does not remove any excess material. Preventing excess material removal extends the life of the polishing pad. During CMP processing, the controller receives data concerning the torque applied to the conditioning disk and the torque applied to the arm to sweep the conditioning disk across the polishing pad. Based upon the detected operating conditions, the system can predict the rate of material removal and adjust the forces applied to the conditioning disk so that the life of the polishing pad is optimized.
摘要翻译：在CMP机器中使用的抛光垫是可消耗的部件，通常在处理特定数量的晶片之后被替换。抛光垫的寿命通过控制由调节盘从抛光垫去除的材料的速率被优化。调节盘移除足够的材料，因此抛光表面可以适当地处理晶片，但不会去除任何多余的材料。防止多余的材料去除延长了抛光垫的使用寿命。在CMP处理期间，控制器接收关于施加到调节盘的扭矩和施加到臂上的扭矩以扫掠经过抛光垫的调节盘的数据。基于检测到的操作条件，系统可以预测材料去除速率并调节施加到调节盘上的力，使抛光垫的寿命得以优化。

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