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1. 发明申请

WO2009117565A2 METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS 审中-公开
标题翻译：基板蚀刻系统和工艺的方法和装置
公开(公告)号：WO2009117565A2
公开(公告)日：2009-09-24
申请号：PCT/US2009/037647
申请日：2009-03-19
申请人： APPLIED MATERIALS, INC. , PAMARTHY, Sharma, V. , FARR, Jon, C. , SIRAJUDDIN, Khalid , GOLD, Ezra, R. , CRUSE, James, P. , OLSZEWSKI, Scott , NANGOY, Roy, C. , SINGH, Saravjeet , BUCHBERGER, Douglas, A. , LEE, Jared, A. , ZHANG, Chunlei
发明人： PAMARTHY, Sharma, V. , FARR, Jon, C. , SIRAJUDDIN, Khalid , GOLD, Ezra, R. , CRUSE, James, P. , OLSZEWSKI, Scott , NANGOY, Roy, C. , SINGH, Saravjeet , BUCHBERGER, Douglas, A. , LEE, Jared, A. , ZHANG, Chunlei
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , Y10T137/0318 , Y10T137/87169
摘要： Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
摘要翻译：本发明的实施例涉及一种基板蚀刻系统和工艺。在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏压功率在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到该室用于促进在进出室和面板之间的气体之间的快速气体转变。

2. 发明申请

WO2011049769A2 METHODS AND APPARATUS FOR TUNING MATCHING NETWORKS 审中-公开
标题翻译：用于调谐匹配网络的方法和装置
公开(公告)号：WO2011049769A2
公开(公告)日：2011-04-28
申请号：PCT/US2010/052203
申请日：2010-10-11
申请人： APPLIED MATERIALS, INC. , ZHANG, Chunlei , SHOJI, Sergio, F. , SEMENIN, Andrey , RAMASWAMY, Kartik , CRUSE, James, P. , LIAO, Bryan
发明人： ZHANG, Chunlei , SHOJI, Sergio, F. , SEMENIN, Andrey , RAMASWAMY, Kartik , CRUSE, James, P. , LIAO, Bryan
IPC分类号： H05H1/46 , H03H7/40
CPC分类号： H03H7/40 , H01J37/32183 , H01J37/32935 , H05H1/46
摘要： Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.
摘要翻译：本文提供了用于调整匹配网络的方法和装置。调整匹配网络的方法包括提供将RF源耦合到负载的匹配网络，所述匹配网络具有设置在第一设定点处的可调谐元件; 通过在第一设定点之上的第一步增加可调元件的值; 感测反射RF功率的第一调整值; 将可调谐元件的值降低到低于第一设定点的第一步; 感测反射RF功率的第二调整值; 比较反射RF功率的第一和第二调整值; 以及将所述可调谐元件移动到对应于具有所述反射RF功率的最低调整值的位置的第二设定点。可以重复该方法，直到反射的RF功率落在可接受的反射RF功率范围内。

3. 发明申请

WO2011008595A3 PLASMA REACTOR WITH RF GENERATOR AND AUTOMATIC IMPEDANCE MATCH WITH MINIMUM REFLECTED POWER-SEEKING CONTROL 审中-公开
公开(公告)号：WO2011008595A3
公开(公告)日：2011-01-20
申请号：PCT/US2010/041083
申请日：2010-07-06
申请人： APPLIED MATERIALS, INC , ZHANG, Chunlei , WONG, Lawrence , RAMASWAMY, Kartik , CRUSE, James, P. , HANAWA, Hiroji
发明人： ZHANG, Chunlei , WONG, Lawrence , RAMASWAMY, Kartik , CRUSE, James, P. , HANAWA, Hiroji
IPC分类号： H05H1/46 , H03H7/40
摘要： An impedance match at an RF generator output of a plasma reactor includes plural minimum-seeking loop controllers having respective feedback input ports coupled to receive a reflected RF power signal from a reflected power sensing circuit and respective control output ports. The output ports are coupled to variable reactances of an impedance match circuit that is connected, between the RF generator and an RF power applicator of the reactor.

4. 发明申请

WO2011137009A2 METHODS FOR EXTENDING THE LIFETIME OF PRESSURE GAUGES COUPLED TO SUBSTRATE PROCESS CHAMBERS 审中-公开
标题翻译：用于延长与底板加工室相连的压力计的寿命的方法
公开(公告)号：WO2011137009A2
公开(公告)日：2011-11-03
申请号：PCT/US2011/033330
申请日：2011-04-20
申请人： APPLIED MATERIALS, INC. , CRUSE, James, P.
发明人： CRUSE, James, P.
IPC分类号： H01L21/02 , H01L21/3065 , H01L21/205
CPC分类号： H01L21/67017
摘要： Methods of extending the lifetime of pressure gauges coupled to process chambers are disclosed herein. In some embodiments, the methods may include isolating the pressure gauge from a processing volume of the process chamber, increasing a moisture content of the processing volume to above a desired moisture level while the pressure gauge is isolated from the processing volume of the process chamber, reducing a moisture content of the processing volume to a desired moisture level, wherein the processing volume has a leak rate of about 2 mTorr/min or less at the desired moisture level, and exposing the pressure gauge to the processing volume after reaching the desired moisture level. In some embodiments, the moisture content of the process chamber may be increased by performing a cleaning process in the process chamber or by allowing air to enter the processing volume.
摘要翻译：本文公开了延长耦合到处理室的压力计寿命的方法。在一些实施例中，所述方法可以包括将压力计与处理室的处理容积隔离，将处理容积的水分含量提高到高于所需水分水平，同时压力计与处理室的处理容积隔离，将处理体积的水分含量降低到所需的水分含量，其中处理体积在所需水分含量下具有约2mTorr / min以下的泄漏速率，并且在达到所需水分后将压力表暴露于处理体积水平。在一些实施例中，可以通过在处理室中执行清洁处理或者允许空气进入处理容积来增加处理室的水分含量。

5. 发明申请

WO2010011643A3 APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION 审中-公开
公开(公告)号：WO2010011643A3
公开(公告)日：2010-01-28
申请号：PCT/US2009/051240
申请日：2009-07-21
申请人： APPLIED MATERIALS, INC. , SHANNON, Steven, C. , YANG, Jang-Gyoo , MILLER, Matthew, L. , RAMASWAMY, Kartik , CRUSE, James, P.
发明人： SHANNON, Steven, C. , YANG, Jang-Gyoo , MILLER, Matthew, L. , RAMASWAMY, Kartik , CRUSE, James, P.
IPC分类号： H05H1/36 , H05H1/24 , H05H1/46
摘要： Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

6. 发明申请

WO2006020513A1 ELIMINATION OF FLOW AND PRESSURE GRADIENTS IN LOW SPECIES UTILIZATION PROCESSES 审中-公开
标题翻译：消除低品种的流量和压力梯度利用过程
公开(公告)号：WO2006020513A1
公开(公告)日：2006-02-23
申请号：PCT/US2005/027893
申请日：2005-08-04
申请人： APPLIED MATERIALS, INC. , CRUSE, James, P. , HEGEDUS, Andreas, G. , KUPPURAO, Satheesh
发明人： CRUSE, James, P. , HEGEDUS, Andreas, G. , KUPPURAO, Satheesh
IPC分类号： H01L21/285
CPC分类号： C23C16/455 , C23C8/10 , C23C8/36 , C23C16/24 , C23C16/45557 , C30B25/14 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/28202 , H01L21/28211 , H01L21/28525 , H01L21/3115 , H01L21/3144
摘要： The amount of atoms diffused into a substrate may be made uniform or the thickness of a thin film may be made uniform in a low species utilization process by stopping the flow of gas into a reaction chamber during the low species utilization process. Stopping the flow of gas into a reaction chamber may entail closing the gate valve (the valve to the vacuum pump), stabilizing the pressure within the reaction chamber, and maintaining the stabilized pressure while stopping the gas flowing into the chamber. Low species utilization processes include the diffusion of nitrogen into silicon dioxide gate dielectric layers by decoupled plasma nitridation (DPN), the deposition of a silicon dioxide film by rapid thermal processing (RTP) or chemical vapor deposition (CVD), and the deposition of silicon epitaxial layers by CVD.
摘要翻译：扩散到基板中的原子的量可以在低物质利用过程中通过在低物质利用过程中停止气体流入反应室中，使得在低物质利用过程中薄膜的厚度可以均匀。停止进入反应室的气体流可能需要关闭闸阀（真空泵的阀），稳定反应室内的压力，并在停止流入室内的气体的同时保持稳定的压力。低物种利用过程包括通过解耦等离子体氮化（DPN）将氮扩散到二氧化硅栅极电介质层中，通过快速热处理（RTP）或化学气相沉积（CVD）沉积二氧化硅膜，以及沉积硅外延层通过CVD。

7. 发明申请

WO2011137069A2 TWIN CHAMBER PROCESSING SYSTEM 审中-公开
标题翻译：双室加工系统
公开(公告)号：WO2011137069A2
公开(公告)日：2011-11-03
申请号：PCT/US2011/033777
申请日：2011-04-25
申请人： APPLIED MATERIALS, INC. , XU, Ming , NGUYEN, Andrew , LEE, Evans , LEE, Jared, Ahmad , CRUSE, James, P. , COBB, Corie, Lynn , SALINAS, Martin, Jeff , SHEYNER, Anchel , GOLD, Ezra, Robert , LANE, John, W.
发明人： XU, Ming , NGUYEN, Andrew , LEE, Evans , LEE, Jared, Ahmad , CRUSE, James, P. , COBB, Corie, Lynn , SALINAS, Martin, Jeff , SHEYNER, Anchel , GOLD, Ezra, Robert , LANE, John, W.
IPC分类号： H01L21/02 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/52 , C23C16/45561 , C23C16/46 , C23C16/509 , C23C16/54
摘要： Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source.
摘要翻译：公开了用于双室处理系统的方法和装置，并且在一些实施例中，可以包括具有独立处理量的第一处理室和第二处理室以及在第一处理室和第二处理室之间的多个共享资源。在一些实施例中，共享资源包括共享真空泵，共用气体面板或共用传热源中的至少一个。

8. 发明申请

WO2011136974A2 PROCESS CHAMBERS HAVING SHARED RESOURCES AND METHODS OF USE THEREOF 审中-公开
标题翻译：具有共享资源的过程池及其使用方法
公开(公告)号：WO2011136974A2
公开(公告)日：2011-11-03
申请号：PCT/US2011/032992
申请日：2011-04-19
申请人： APPLIED MATERIALS, INC. , LEE, Jared, Ahmad , CRUSE, James, P. , NGUYEN, Andrew , COBB, Corie, Lynn , XU, Ming , SALINAS, Martin, Jeff , SHEYNER, Anchel
发明人： LEE, Jared, Ahmad , CRUSE, James, P. , NGUYEN, Andrew , COBB, Corie, Lynn , XU, Ming , SALINAS, Martin, Jeff , SHEYNER, Anchel
IPC分类号： H01L21/02 , H01L21/205
CPC分类号： H01L21/67109 , H01L21/6719
摘要： Process chambers having shared resources and methods of use are provided. In some embodiments, substrate processing systems may include a first process chamber having a first substrate support disposed within the first process chamber, wherein the first substrate support has a first heater and a first cooling plate to control a temperature of the first substrate support; a second process chamber having a second substrate support disposed within the second process chamber, wherein the second substrate support has a second heater and a second cooling plate to control a temperature of the second substrate support; and a shared heat transfer fluid source having an outlet to provide a heat transfer fluid to the first cooling plate and the second cooling plate and an inlet to receive the heat transfer fluid from the first cooling plate and the second cooling plate.
摘要翻译：提供了具有共享资源和使用方法的过程室。在一些实施例中，衬底处理系统可以包括第一处理室，其具有设置在第一处理室内的第一衬底支撑件，其中第一衬底支撑件具有第一加热器和第一冷却板以控制第一衬底支撑件的温度; 第二处理室，具有设置在所述第二处理室内的第二基板支撑件，其中所述第二基板支撑件具有第二加热器和第二冷却板，以控制所述第二基板支撑件的温度; 以及共用传热流体源，其具有出口以向第一冷却板和第二冷却板提供传热流体，以及从第一冷却板和第二冷却板接收传热流体的入口。

9. 发明申请

WO2011136959A3 METHODS FOR MONITORING PROCESSING EQUIPMENT 审中-公开
公开(公告)号：WO2011136959A3
公开(公告)日：2011-11-03
申请号：PCT/US2011/032864
申请日：2011-04-18
申请人： APPLIED MATERIALS, INC. , CRUSE, James, P. , CANTWELL, Dermot , RICE, Michael, R. , KRIL, Thorsten , HARDY, Charles
发明人： CRUSE, James, P. , CANTWELL, Dermot , RICE, Michael, R. , KRIL, Thorsten , HARDY, Charles
IPC分类号： H01L21/02 , H01L21/66
摘要： Methods for monitoring processing equipment are provided herein. In some embodiments, a method for monitoring processing equipment when in an idle state for a period of idle time may include selecting a test from a list of a plurality of tests to perform on the processing equipment when the processing equipment is in the idle state, wherein the test has a total run time; starting the selected test; comparing a remaining idle time of the period of idle time to a remaining run time of the total run time as the selected test is performed; and determining whether to end the selected test prior to completing the total run time in response to the comparison.

10. 发明申请

WO2003107382A3 PLASMA APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE 审中-公开
公开(公告)号：WO2003107382A3
公开(公告)日：2003-12-24
申请号：PCT/US2003/018784
申请日：2003-06-12
申请人： APPLIED MATERIALS, INC.
发明人： KRAUS, Philip, Allan , CHUA, Tai, Cheng , HOLLAND, John , CRUSE, James, P.
IPC分类号： H01J37/32
摘要： Embodiments of the invention generally provide a method of forming a nitride gate dielectric layer. The method includes generating a nitrogen-containing plasma in a processing chamber via introduction of a nitrogen-containing processing gas into the processing chamber and the application of an ionizing energy to the processing gas, and pulsing the ionizing energy to maintain a mean temperature of electrons in the nitrogen-containing plasma of less than about 0.7 eV.

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